JP6391845B2 - 半導体装置およびそれを備える半導体モジュール - Google Patents
半導体装置およびそれを備える半導体モジュール Download PDFInfo
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- JP6391845B2 JP6391845B2 JP2017542547A JP2017542547A JP6391845B2 JP 6391845 B2 JP6391845 B2 JP 6391845B2 JP 2017542547 A JP2017542547 A JP 2017542547A JP 2017542547 A JP2017542547 A JP 2017542547A JP 6391845 B2 JP6391845 B2 JP 6391845B2
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- 239000004065 semiconductor Substances 0.000 title claims description 162
- 229910052751 metal Inorganic materials 0.000 claims description 86
- 239000002184 metal Substances 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 54
- 239000011159 matrix material Substances 0.000 claims description 19
- 230000001186 cumulative effect Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000005674 electromagnetic induction Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
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Description
本発明の実施形態を説明する前に、本発明の前提となる技術について説明する。図14は前提技術における半導体モジュール30の内部構造を示す平面図である。図14に示すように、前提技術における半導体モジュール30は、ベース板19上に搭載された複数の半導体装置10,10Aおよび複数の金属パターン24,26を備える。
図1は、本実施の形態1における半導体装置100の平面図である。本実施の形態1における半導体装置100は、前提技術で示した半導体装置10,10Aのそれぞれに代えて半導体モジュール30(図14)に搭載されるものである。
本実施の形態1における半導体装置100は、絶縁基板1と、絶縁基板1の一方主面に接合された一続きの金属パターン2と、金属パターン2上の絶縁基板1とは反対側の面に接合された複数のスイッチング素子31,32,33,41,42,43と、を備え、複数のスイッチング素子は、行および列の数がそれぞれ2以上となるマトリックス状に金属パターン2上に配置される。
図2は、本実施の形態2における半導体装置200の平面図である。実施の形態1(図1)では、金属パターン24から個々のスイッチング素子31,32,33,41,42,43のゲート電極31b,32b,33b,41b,42b,43bに対して、ゲート用ワイヤ9a,9bが接続されていた。
本実施の形態2における半導体装置200において、行方向又は列方向において、隣接して配置されたスイッチング素子間のゲート電極がゲート用ワイヤで接合されている。
図3は、本実施の形態3における半導体装置300の平面図である。本実施の形態3では、スイッチング素子31のゲート電極31bが、主電流用ワイヤ8aの方向(Y方向)と平行な2辺からほぼ等しい距離に設けられる。つまり、ゲート電極31bは、X方向と直交する2辺の中央付近に設けられている。他のスイッチング素子32,33,41,42,43のゲート電極32b,33b,41b,42b,43bの位置についても同様である。
本実施の形態3における半導体装置300において、ゲート電極(例えばゲート電極31b)は、他方主面の対向する2辺から等距離の位置に設けられ、対向する2辺は、一方方向(即ち列方向(Y方向))に平行な2辺である。
図4は、本実施の形態4における半導体装置400の平面図である。本実施の形態4では、スイッチング素子31のゲート電極31bが、スイッチング素子31の他方主面のほぼ中央に設けられている。つまり、ゲート電極31bが、主電流用ワイヤ8a,8bの向きに直交するスイッチング素子31の一辺のほぼ中央領域、かつ主電流導通ワイヤの向きと平行なIGBT素子の一辺のほぼ中央領域に設けられている。
図5は、本実施の形態5における半導体装置500の平面図である。本実施の形態5では、スイッチング素子31には、ゲート電極31bが2つ設けられる。2つのゲート電極31bは、対向する2辺のそれぞれに接して設けられる。ここで、対向する2辺とは、主電流用ワイヤ8a,8bの向き(Y方向)と直交する方向(X方向)の2辺である。他のスイッチング素子32,33,41,42,43のゲート電極32b,33b,41b,42b,43bの構成についても同様である。
本実施の形態5における半導体装置500において、各スイッチング素子に設けられるゲート電極は2個であり、それぞれのゲート電極は他方主面の対向する2辺にそれぞれ接して設けられ、行方向又は列方向の一方方向において、隣接して配置されたスイッチング素子間のゲート電極が対向するように複数のスイッチング素子が配置される。
図6は、本実施の形態6における半導体装置600の平面図である。また、図7は図6の線分AAにおける半導体装置600の断面図である。
本実施の形態6における半導体装置600において、他方主面において、2つのゲート電極の間に第2主電極が配置され、その第2主電極に主電流用ワイヤ8aと8bが接続される。
図8は、本実施の形態7における半導体装置700の平面図である。本実施の形態7において、金属パターン2上に接合されたスイッチング素子31,32,33,41,42,43およびダイオード素子51,52,53の配置は、実施の形態1〜6と同様である。本実施の形態7では、スイッチング素子のゲート電極を接続するゲート用ワイヤ9a,9b,9cの方向と、スイッチング素子の第2主電極を接続する主電流用ワイヤ8a,8b,8cの方向とが直交している。
本実施の形態7における半導体装置700において、行方向又は列方向の一方方向において、隣接して配置されたスイッチング素子間のゲート電極がゲート用ワイヤで接合され、行方向又は列方向の他方方向において、隣接して配置されたスイッチング素子間の第2主電極が主電流用ワイヤで接合される。
図9は、本実施の形態8における半導体装置800の平面図である。本実施の形態8において、スイッチング素子31のゲート電極31bは、−X方向側の辺に接して設けられている。他のスイッチング素子32,33,41,42,43のゲート電極32b,33b,41b,42b,43bについても同様の構成である。
図10は、本実施の形態9における半導体装置900の平面図である。実施の形態1〜8においては、3×2のマトリックス状にスイッチング素子31,32,33,41,42,43が配置され、さらに、列方向に3×1のマトリックス状にダイオード素子51,52,53が配置されていた。一方、本実施の形態9においては、図10に示すように、2×3のマトリックス状にスイッチング素子31,32,33,41,42,43が配置され、さらに、行方向に1×3のマトリックス状にダイオード素子51,52,53が配置される。
図11は、本実施の形態10における半導体装置1000の平面図である。本実施の形態10において、スイッチング素子31,32,33,41,42,43およびダイオード素子51,52,53の配置は、実施の形態9(図10)と同じである。また、本実施の形態10において、スイッチング素子31,32,33,41,42,43のゲート電極31b,32b,33b,41b,42b,43bの位置は、実施の形態8(図9)と同じである。その他の構成は、実施の形態8又は実施の形態9と同じであるため、説明を省略する。
図12は、本実施の形態11における半導体装置1100の平面図である。本実施の形態11において、スイッチング素子31,32,33,41,42,43およびダイオード素子51,52,53の配置は、実施の形態3(図3)と同じである。
本実施の形態11における半導体装置1100において、行方向又は列方向に進むほど、隣接して配置されたスイッチング素子間の第2主電極を接合する主電流用ワイヤの本数が増大する。
図13は、本実施の形態12における半導体装置1200の平面図である。本実施の形態12では、実施の形態1〜11と異なり、金属パターン2上にスイッチング素子31,32,33,41,42,43のみが3×2のマトリックス状に配置されている。ここで、各スイッチング素子は、例えば逆導通機能を持ったIGBTである。逆導通機能を持ったIGBTとは、IGBTのチップ内に還流ダイオードを内蔵した素子である。また、各スイッチング素子がMOSFETである場合は、MOSFETのソース・ドレイン間に寄生ダイオード(ボディダイオード)が内蔵されている。
本実施の形態12における半導体装置1200において、金属パターン2上に配置される半導体素子は、スイッチング素子31,32,33,41,42,43のみであり、スイッチング素子31,32,33,41,42,43はダイオードを内蔵している。
Claims (16)
- 絶縁基板と、
前記絶縁基板の一方主面に接合された一続きの金属パターンと、
前記金属パターン上の前記絶縁基板とは反対側の面に接合された複数のスイッチング素子と、
を備え、
前記複数のスイッチング素子は、行および列の数がそれぞれ2以上となるマトリックス状に前記金属パターン上に配置され、
前記複数のスイッチング素子のそれぞれは、
前記金属パターンに接合される側の一方主面に設けられた第1主電極と、
前記一方主面と反対側の他方主面に設けられた第2主電極と、
前記他方主面に設けられた少なくとも1つのゲート電極と、
を備え、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記第2主電極が少なくとも1本の主電流用ワイヤで電気的に接続されており、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記ゲート電極がゲート用ワイヤで接合され、
前記少なくとも1つのゲート電極は2個であり、それぞれの前記ゲート電極は前記他方主面の対向する2辺にそれぞれ接して設けられ、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記ゲート電極が対向するように前記複数のスイッチング素子が配置され、
前記他方主面において、2つの前記ゲート電極の間に前記第2主電極が配置され、その前記第2主電極に前記主電流用ワイヤが接続される、
半導体装置。 - 絶縁基板と、
前記絶縁基板の一方主面に接合された一続きの金属パターンと、
前記金属パターン上の前記絶縁基板とは反対側の面に接合された複数のスイッチング素子と、
を備え、
前記複数のスイッチング素子は、行および列の数がそれぞれ2以上となるマトリックス状に前記金属パターン上に配置され、
前記複数のスイッチング素子のそれぞれは、
前記金属パターンに接合される側の一方主面に設けられた第1主電極と、
前記一方主面と反対側の他方主面に設けられた第2主電極と、
前記他方主面に設けられた少なくとも1つのゲート電極と、
を備え、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記第2主電極が少なくとも1本の主電流用ワイヤで電気的に接続されており、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記ゲート電極がゲート用ワイヤで接合され、
行方向又は列方向に進むほど、隣接して配置された前記スイッチング素子間の前記第2主電極を接合する前記主電流用ワイヤの本数が増大する、
半導体装置。 - 絶縁基板と、
前記絶縁基板の一方主面に接合された一続きの金属パターンと、
前記金属パターン上の前記絶縁基板とは反対側の面に接合された複数のスイッチング素子と、
を備え、
前記複数のスイッチング素子は、行および列の数がそれぞれ2以上となるマトリックス状に前記金属パターン上に配置され、
前記複数のスイッチング素子のそれぞれは、
前記金属パターンに接合される側の一方主面に設けられた第1主電極と、
前記一方主面と反対側の他方主面に設けられた第2主電極と、
前記他方主面に設けられた少なくとも1つのゲート電極と、
を備え、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記第2主電極が少なくとも1本の主電流用ワイヤで電気的に接続されており、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記ゲート電極がゲート用ワイヤで接合され、
前記ゲート用ワイヤの直径が、前記主電流用ワイヤの直径よりも小さい、
半導体装置。 - 絶縁基板と、
前記絶縁基板の一方主面に接合された一続きの金属パターンと、
前記金属パターン上の前記絶縁基板とは反対側の面に接合された複数のスイッチング素子と、
を備え、
前記複数のスイッチング素子は、行および列の数がそれぞれ2以上となるマトリックス状に前記金属パターン上に配置され、
前記複数のスイッチング素子のそれぞれは、
前記金属パターンに接合される側の一方主面に設けられた第1主電極と、
前記一方主面と反対側の他方主面に設けられた第2主電極と、
前記他方主面に設けられた少なくとも1つのゲート電極と、
を備え、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記第2主電極が少なくとも1本の主電流用ワイヤで電気的に接続されており、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記ゲート電極がゲート用ワイヤで接合され、
行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記ゲート電極がゲート用ワイヤで接合され、
行方向又は列方向の他方方向において、隣接して配置された前記スイッチング素子間の前記第2主電極が主電流用ワイヤで接合され、
前記ゲート用ワイヤと前記主電流用ワイヤとが立体的に交差する、
半導体装置。 - 前記ゲート電極は、前記他方主面の対向する2辺から等距離の位置に設けられ、
前記対向する2辺は、前記一方方向に平行な2辺である、
請求項1から請求項4のうちのいずれか1項に記載の半導体装置。 - 前記ゲート用ワイヤの高さよりも前記主電流用ワイヤの高さが大きい、
請求項1に記載の半導体装置。 - 行方向又は列方向の一方方向において、隣接して配置された前記スイッチング素子間の前記ゲート電極がゲート用ワイヤで接合され、
行方向又は列方向の他方方向において、隣接して配置された前記スイッチング素子間の前記第2主電極が主電流用ワイヤで接合される、
請求項1から請求項3のうちのいずれか1項に記載の半導体装置。 - 前記ゲート電極は平面視で長方形であり、
前記ゲート電極の長い方の辺が前記他方主面の一辺に接する、
請求項1から請求項4のうちのいずれか1項に記載の半導体装置。 - 前記ゲート用ワイヤと前記主電流用ワイヤとが立体的に交差する、
請求項7に記載の半導体装置。 - 複数の前記スイッチング素子のうち、前記ゲート電極までの前記ゲート用ワイヤの累積の長さが互いに等しい前記スイッチング素子同士において、それらのスイッチング速度に影響する電気的特性が、前記スイッチング速度が等しくなるように設定されている、
請求項1から請求項4のうちのいずれか1項に記載の半導体装置。 - 前記電気的特性は、ゲート閾値電圧又は主電極間の飽和電圧である、
請求項10に記載の半導体装置。 - 前記マトリックスの行または列の数と同じ個数の複数のダイオード素子をさらに備え、
前記複数のスイッチング素子の前記他方主面の面積の合計が、前記複数のダイオード素子の上面の面積の合計よりも大きい、
請求項1から請求項4のうちのいずれか1項に記載の半導体装置。 - 前記金属パターン上に配置される半導体素子は、前記スイッチング素子のみであり、
前記スイッチング素子はダイオードを内蔵している、
請求項1から請求項4のうちのいずれか1項に記載の半導体装置。 - 前記スイッチング素子はワイドバンドギャップ半導体を含む、
請求項1から請求項4のうちのいずれか1項に記載の半導体装置。 - 前記ダイオード素子はワイドバンドギャップ半導体を含む、
請求項12に記載の半導体装置。 - 請求項1から請求項4のうちのいずれか1項に記載の半導体装置の複数と、
複数の前記半導体装置が搭載されるベース板と、
を備える、
半導体モジュール。
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JP6502263B2 (ja) | 2013-11-20 | 2019-04-17 | ローム株式会社 | スイッチングデバイスおよび電子回路 |
DE102016224631B4 (de) * | 2016-12-09 | 2020-06-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektrisch leitende Verbindung zwischen mindestens zwei elektrischen Komponenten an einem mit elektronischen und/oder elektrischen Bauelementen bestücktem Träger, die mit einem Bonddraht ausgebildet ist |
CN110663110B (zh) * | 2017-05-30 | 2023-04-18 | 三菱电机株式会社 | 半导体功率模块 |
JP7070661B2 (ja) * | 2018-03-20 | 2022-05-18 | 富士電機株式会社 | 半導体装置 |
JP7139799B2 (ja) * | 2018-09-03 | 2022-09-21 | 株式会社デンソー | 半導体装置 |
DE112019000595T5 (de) | 2018-09-20 | 2020-11-26 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
US11688722B2 (en) | 2018-09-20 | 2023-06-27 | Fuji Electric Co., Ltd. | Semiconductor device |
DE102020107288A1 (de) * | 2019-12-10 | 2021-06-10 | X-Fab Semiconductor Foundries Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
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JP2002033446A (ja) * | 2000-05-10 | 2002-01-31 | Nissan Motor Co Ltd | 半導体装置 |
US7230273B2 (en) | 2002-06-13 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor |
JP4988784B2 (ja) | 2009-03-30 | 2012-08-01 | 株式会社日立製作所 | パワー半導体装置 |
JP5790039B2 (ja) * | 2010-07-23 | 2015-10-07 | 富士電機株式会社 | 半導体装置 |
JP5637944B2 (ja) | 2011-06-29 | 2014-12-10 | 株式会社 日立パワーデバイス | パワー半導体モジュール |
JP5555206B2 (ja) * | 2011-07-11 | 2014-07-23 | 株式会社 日立パワーデバイス | 半導体パワーモジュール |
CN104160502A (zh) | 2012-03-09 | 2014-11-19 | 三菱电机株式会社 | 半导体模块 |
JP2013197331A (ja) | 2012-03-21 | 2013-09-30 | Sumitomo Electric Ind Ltd | 半導体デバイス |
JP2015142059A (ja) | 2014-01-30 | 2015-08-03 | 株式会社日立製作所 | パワー半導体モジュール |
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DE112015006984T5 (de) | 2018-07-12 |
US20180204778A1 (en) | 2018-07-19 |
CN108140640B (zh) | 2021-06-04 |
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CN108140640A (zh) | 2018-06-08 |
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