JP6375719B2 - 磁性薄膜および磁性薄膜を含む応用デバイス - Google Patents
磁性薄膜および磁性薄膜を含む応用デバイス Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims description 265
- 239000010409 thin film Substances 0.000 title claims description 52
- 239000000956 alloy Substances 0.000 claims description 42
- 229910045601 alloy Inorganic materials 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 34
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- 230000004888 barrier function Effects 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 175
- 238000000034 method Methods 0.000 description 23
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- 238000004544 sputter deposition Methods 0.000 description 14
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- 229910005335 FePt Inorganic materials 0.000 description 6
- 239000000395 magnesium oxide Substances 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 6
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- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910018979 CoPt Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
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- 230000003068 static effect Effects 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- -1 CoNiP Inorganic materials 0.000 description 1
- 229910015187 FePd Inorganic materials 0.000 description 1
- 229910000575 Ir alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910016583 MnAl Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 239000000314 lubricant Substances 0.000 description 1
- 238000007885 magnetic separation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0091—Magnetic properties, e.g. guiding magnetic flux
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/123—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Magnetic Record Carriers (AREA)
- Micromachines (AREA)
- Magnetic Heads (AREA)
Description
平滑な表面を有する(001)MgO単結晶基板(タテホ化学工業株式会社製)を洗浄し、非磁性基板10を準備した。洗浄後の非磁性基板10を、スパッタ装置内に導入した。非磁性基板10を350℃に加熱した後に、圧力0.4PaのArガス中でPtターゲットを用いたRFマグネトロンスパッタ法により、膜厚20nmのPtシード層20を形成した。
20 シード層
30 磁気記録層
60 トンネル磁気抵抗素子
62 固定磁性層
64 自由磁性層
66 障壁層
70 MOS−FET
72 基板
74 ソース
76 ドレイン
78 ゲート
82 コンタクト
84 ワード線
86 ビット線
88 ディジット線
100 MRAM
Claims (9)
- 規則合金を含み、前記規則合金は、FeおよびNiからなる群から選択される少なくとも1種の第1元素と、Pt、Pd、AuおよびIrからなる群から選択される少なくとも1種の第2元素と、Scとを含み、Scの含有量は1.2原子%〜3.8原子%の範囲内であることを特徴とする磁性薄膜。
- 前記第1元素がFeであり、前記第2元素がPtであることを特徴とする請求項1に記載の磁性薄膜。
- 前記規則合金がL10型規則構造を有することを特徴とする請求項1に記載の磁性薄膜。
- 前記磁性薄膜が、前記規則合金を含む磁性結晶粒と、非磁性結晶粒界とからなるグラニュラー構造を有し、前記非磁性結晶粒界は、炭素、ホウ素、酸化物および窒化物からなる群から選択される少なくとも1つの材料を含むことを特徴とする請求項1に記載の磁性薄膜。
- 非磁性基板と磁気記録層とを含み、前記磁気記録層が請求項1から4のいずれかに記載の磁性薄膜を含むことを特徴とする磁気記録媒体。
- 請求項1から4のいずれかに記載の磁性薄膜を含むことを特徴とする磁気抵抗素子。
- 固定磁性層と、自由磁性層と、障壁層とを含み、前記障壁層は、前記固定磁性層と前記自由磁性層との間に位置し、前記固定磁性層および前記自由磁性層の少なくとも一方は、請求項1から4のいずれかに記載の磁性薄膜を含むことを特徴とするトンネル磁気抵抗素子。
- 請求項6に記載の磁気抵抗素子を含むことを特徴とする磁気ランダムアクセスメモリ。
- 請求項1から4のいずれかに記載の磁性薄膜を含むことを特徴とするマイクロエレクトロメカニカルシステム。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014129203A JP6375719B2 (ja) | 2014-06-24 | 2014-06-24 | 磁性薄膜および磁性薄膜を含む応用デバイス |
CN201580011466.4A CN106062900B (zh) | 2014-06-24 | 2015-05-19 | 磁性薄膜以及包括磁性薄膜的应用设备 |
MYPI2016703118A MY175040A (en) | 2014-06-24 | 2015-05-19 | Magnetic thin film and application device including magnetic thin film |
SG11201607105PA SG11201607105PA (en) | 2014-06-24 | 2015-05-19 | Magnetic thin film and application device including magnetic thin film |
PCT/JP2015/002519 WO2015198523A1 (ja) | 2014-06-24 | 2015-05-19 | 磁性薄膜および磁性薄膜を含む応用デバイス |
US15/251,056 US10115890B2 (en) | 2014-06-24 | 2016-08-30 | Magnetic thin film and application device including magnetic thin film |
Applications Claiming Priority (1)
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JP2014129203A JP6375719B2 (ja) | 2014-06-24 | 2014-06-24 | 磁性薄膜および磁性薄膜を含む応用デバイス |
Publications (3)
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JP2016009753A JP2016009753A (ja) | 2016-01-18 |
JP2016009753A5 JP2016009753A5 (ja) | 2017-06-15 |
JP6375719B2 true JP6375719B2 (ja) | 2018-08-22 |
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Country Status (6)
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US (1) | US10115890B2 (ja) |
JP (1) | JP6375719B2 (ja) |
CN (1) | CN106062900B (ja) |
MY (1) | MY175040A (ja) |
SG (1) | SG11201607105PA (ja) |
WO (1) | WO2015198523A1 (ja) |
Cited By (1)
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JP7168627B2 (ja) | 2015-09-24 | 2022-11-09 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 物体マッピング及び/又は瞳マッピングのための光学系 |
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CN115915906A (zh) | 2016-02-05 | 2023-04-04 | 汉阳大学校产学协力团 | 存储器件 |
JP6884322B2 (ja) * | 2016-10-31 | 2021-06-09 | 国立大学法人福井大学 | 2次元光走査ミラー装置の製造方法 |
TWI626162B (zh) * | 2017-06-07 | 2018-06-11 | 國立清華大學 | 合金膜結晶織構誘導方法及其結構 |
JP2019047119A (ja) * | 2017-09-04 | 2019-03-22 | Tdk株式会社 | 磁気抵抗効果素子、磁気メモリ、および磁気デバイス |
US10468592B1 (en) * | 2018-07-09 | 2019-11-05 | Applied Materials, Inc. | Magnetic tunnel junctions and methods of fabrication thereof |
CN110246656A (zh) * | 2019-07-02 | 2019-09-17 | 西华大学 | 一种多层耦合图形化磁性薄膜及制备和测试方法 |
JP2020115217A (ja) * | 2020-03-24 | 2020-07-30 | 国立大学法人福井大学 | 2次元光走査ミラー装置、2次元光走査装置及び画像投影装置 |
CN113460951B (zh) * | 2021-07-06 | 2023-07-25 | 北方工业大学 | 一种主动式mems固态制冷器件及其制造方法 |
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TWI222630B (en) | 2001-04-24 | 2004-10-21 | Matsushita Electric Ind Co Ltd | Magnetoresistive element and magnetoresistive memory device using the same |
JP4024499B2 (ja) | 2001-08-15 | 2007-12-19 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
JP4686430B2 (ja) * | 2002-03-28 | 2011-05-25 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
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JP2005333106A (ja) | 2004-04-20 | 2005-12-02 | Ken Takahashi | 交換結合素子とその製造方法並びに交換結合素子を具備したデバイス |
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JP7168627B2 (ja) | 2015-09-24 | 2022-11-09 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 物体マッピング及び/又は瞳マッピングのための光学系 |
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