JP6336517B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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Description
20 トンネリング層
24 前面パッシベーション膜
26 反射防止膜
30 半導体層
40 後面パッシベーション膜
42、44 電極
46 コンタクトホール
Claims (17)
- 半導体基板と、
前記半導体基板の一面上に形成される第1導電型領域及び第2導電型領域を含む導電型領域と、
前記導電型領域上に形成され、コンタクトホールを備えるパッシベーション膜と、
前記コンタクトホールの内部において前記導電型領域上に形成され、前記コンタクトホールの内側面の少なくとも一部及び前記パッシベーション膜のうち少なくとも一つの上に形成される保護膜と、
前記保護膜を挟んで前記コンタクトホールを介して前記導電型領域に電気的に連結される電極と、
を含み、
前記保護膜はシリコン酸化膜を含み、
前記パッシベーション膜は、前記導電型領域上に位置する第1層と、前記第1層上に位置し、前記第1層と異なる物質を含む第2層と、を含み、
前記コンタクトホールは、前記第1層に形成された第1コンタクトホール部と、前記第2層に形成され、前記第1コンタクトホール部と連通する第2コンタクトホール部とを含み、
前記第1コンタクトホール部は前記第2コンタクトホール部よりサイズが大きい部分を含むか、前記第1コンタクトホール部の内側面と前記第2コンタクトホール部の内側面との間に段差が位置する、太陽電池。 - 前記保護膜は、前記電極と前記パッシベーション膜との間において前記電極が形成された部分に全体的に形成される、請求項1に記載の太陽電池。
- 前記保護膜は、前記コンタクトホールを介して露出した前記導電型領域上、及び前記パッシベーション膜の内側面の少なくとも一部上に接触して形成される、請求項1に記載の太陽電池。
- 前記第1コンタクトホール部のサイズは、前記導電型領域に隣接した部分より前記第2層に隣接した部分でより大きい、請求項1に記載の太陽電池。
- 前記保護膜が前記パッシベーション膜の側面に接触して形成され、
前記電極が前記保護膜上で前記導電型領域と離隔する、請求項1に記載の太陽電池。 - 前記第1層のバンドギャップが前記第2層のバンドギャップより大きい、請求項1に記載の太陽電池。
- 前記保護膜の厚さが前記第1層及び前記第2層のそれぞれの厚さより薄い、請求項1に記載の太陽電池。
- 前記第1層が酸化物又は非晶質半導体を含み、
前記第2層が窒化物又は炭化物を含み、
前記保護膜が酸化物を含む、請求項1に記載の太陽電池。 - 半導体基板と、
前記半導体基板の一面上に形成される第1導電型領域及び第2導電型領域を含む導電型領域と、
前記導電型領域上に形成され、コンタクトホールを備えるパッシベーション膜と、
前記コンタクトホールの内部において前記導電型領域上に形成される保護膜と、
前記保護膜を挟んで前記コンタクトホールを介して前記導電型領域に電気的に連結される電極と、
を含み、
前記パッシベーション膜は、前記導電型領域上に位置する第1層と、前記第1層上に位置し、前記第1層と異なる物質を含む第2層と、を含み、
前記コンタクトホールは、前記第1層に形成された第1コンタクトホール部と、前記第2層に形成され、前記第1コンタクトホール部と連通する第2コンタクトホール部とを含み、
前記第1コンタクトホール部は前記第2コンタクトホール部よりサイズが大きい部分を含むか、前記第1コンタクトホール部の内側面と前記第2コンタクトホール部の内側面との間に段差が位置する太陽電池。 - 半導体基板の一面上に第1導電型領域及び第2導電型領域を含む導電型領域を形成するステップと、
前記導電型領域上にコンタクトホールを備えるパッシベーション膜を形成するステップと、
前記コンタクトホールを介して露出した前記導電型領域上に保護膜を形成するステップと、
前記保護膜を挟んで前記パッシベーション膜の前記コンタクトホールを介して前記導電型領域に電気的に連結される電極を形成するステップと、
を含み、
前記保護膜はシリコン酸化膜を含み、
前記パッシベーション膜を形成するステップは、
前記導電型領域上に第1層を形成するステップと、
前記第1層上に位置し、前記第1層と異なる物質を含む第2層を形成するステップと、
前記第2層を貫通する第2コンタクトホール部を形成するステップと、
前記第2コンタクトホール部を形成する方法と異なる方法で前記第1層を貫通する第1コンタクトホール部を形成し、前記第2コンタクトホール部及び前記第1コンタクトホール部で構成される前記コンタクトホールを形成するステップと、
を含む、太陽電池の製造方法。 - 前記第2コンタクトホール部を形成するステップにおいて、前記第2コンタクトホール部がレーザーエッチングによって形成され、前記第1層が残存する、請求項10に記載の太陽電池の製造方法。
- 前記第1コンタクトホール部を形成するステップにおいて、前記第1コンタクトホール部が湿式エッチングによって形成される、請求項11に記載の太陽電池の製造方法。
- 前記第1コンタクトホール部がアンダーカットを備える、請求項12に記載の太陽電池の製造方法。
- 前記保護膜は化学的酸化(chemical oxidation)によって形成される、請求項10に記載の太陽電池の製造方法。
- 前記保護膜を形成するステップにおいて、前記保護膜は、少なくとも前記コンタクトホールの内部において前記導電型領域上に形成される、請求項10に記載の太陽電池の製造方法。
- 前記保護膜は、前記コンタクトホールの内側面の少なくとも一部上、及び前記パッシベーション膜の外部面上のうち少なくとも一つにさらに形成される、請求項15に記載の太陽電池の製造方法。
- 前記第1層及び前記第2層は、化学気相蒸着によってイン―サイチュ(in―situ)工程によって形成され、
前記電極はスパッタリング又はめっきによって形成される、請求項10に記載の太陽電池の製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
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