JP6333128B2 - 磁気アニール装置 - Google Patents
磁気アニール装置 Download PDFInfo
- Publication number
- JP6333128B2 JP6333128B2 JP2014179343A JP2014179343A JP6333128B2 JP 6333128 B2 JP6333128 B2 JP 6333128B2 JP 2014179343 A JP2014179343 A JP 2014179343A JP 2014179343 A JP2014179343 A JP 2014179343A JP 6333128 B2 JP6333128 B2 JP 6333128B2
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- magnetic annealing
- annealing apparatus
- magnetic
- heat shield
- longitudinal direction
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- 238000000137 annealing Methods 0.000 title claims description 73
- 238000012545 processing Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000005452 bending Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 72
- 238000010586 diagram Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 238000011160 research Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/08—Arrangements of linings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0041—Chamber type furnaces specially adapted for burning bricks or pottery
- F27B17/005—Chamber type furnaces specially adapted for burning bricks or pottery with cylindrical chambers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D5/0037—Supports specially adapted for semi-conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Hall/Mr Elements (AREA)
Description
前記複数の基板を収容した状態で磁気アニール処理するための横長筒状の処理容器と、
該処理容器の長手方向に延びる面の少なくとも上部及び下部を外部から覆うように設けられた加熱手段と、
該加熱手段を更に外部から覆うように設けられた磁石と、
前記処理容器内で前記複数の基板を保持可能な基板保持具と、
該基板保持具の少なくとも上面及び下面を囲むように設けられ、前記加熱手段からの熱を反射する遮熱板と、を有する。
61 ボート支持部
70 ウエハボート
80〜88 遮熱板
90 ボートローダ
100 処理容器
110〜114 ヒータ
180 アニール炉
190 磁石
200 磁気アニール装置
Claims (14)
- 磁界中で複数の基板をアニールするための磁気アニール装置であって、
前記複数の基板を収容した状態で磁気アニール処理するための横長筒状の処理容器と、
該処理容器の長手方向に延びる面の少なくとも上部及び下部を外部から覆うように設けられた加熱手段と、
該加熱手段を更に外部から覆うように設けられた磁石と、
前記処理容器内で前記複数の基板を保持可能な基板保持具と、
該基板保持具の少なくとも上面及び下面を囲むように設けられ、前記加熱手段からの熱を反射する遮熱板と、を有する磁気アニール装置。 - 前記遮熱板は、前記加熱手段と対向しない位置に更に設けられた請求項1に記載の磁気アニール装置。
- 前記加熱手段と対向しない位置は、前記長手方向と略垂直な方向に面を有する端面である請求項2に記載の磁気アニール装置。
- 前記基板保持具は、前記複数の基板を略垂直に立てた状態で、前記長手方向に沿って所定間隔を有して保持可能である請求項1乃至3のいずれか一項に記載の磁気アニール装置。
- 前記基板保持具は、前記複数の基板を略水平に載置した状態で、鉛直方向に所定間隔を有して積載体をなすように保持可能である請求項1乃至3のいずれか一項に記載の磁気アニール装置。
- 前記基板保持具は、前記積載体を前記長手方向に沿って複数個並列して保持可能である請求項5に記載の磁気アニール装置。
- 前記加熱手段は、前記処理容器の長手方向に延びる面の略全面を覆う請求項5又は6に記載の磁気アニール装置。
- 前記遮熱板は、前記複数の基板の最上面及び最下面を、前記基板保持具を介して覆うように設けられた請求項7に記載の磁気アニール装置。
- 前記遮熱板は、非磁性体の金属板から構成される請求項1乃至8のいずれか一項に記載の磁気アニール装置。
- 前記非磁性体の金属板が、複数枚からなる請求項9に記載の磁気アニール装置。
- 複数枚からなる前記非磁性体の金属板は、スペーサを介して所定間隔を有して配置された請求項10に記載の磁気アニール装置。
- 前記遮熱板は、切り曲げ加工によるルーバー状の複数のスリットを有する請求項2又は3に記載の磁気アニール装置。
- 前記加熱手段の前記長手方向の長さは、前記基板保持具の前記長手方向の長さの1.7倍以上である請求項1乃至12のいずれか一項に記載の磁気アニール装置。
- 前記処理容器は、円筒形状を有する請求項1乃至13のいずれか一項に記載の磁気アニール装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014179343A JP6333128B2 (ja) | 2014-09-03 | 2014-09-03 | 磁気アニール装置 |
KR1020150121100A KR101882057B1 (ko) | 2014-09-03 | 2015-08-27 | 자기 어닐링 장치 |
US14/840,486 US10254046B2 (en) | 2014-09-03 | 2015-08-31 | Magnetic annealing apparatus |
TW104128551A TWI645042B (zh) | 2014-09-03 | 2015-08-31 | 磁性退火裝置 |
CN201510556876.9A CN105386126B (zh) | 2014-09-03 | 2015-09-02 | 磁性退火装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014179343A JP6333128B2 (ja) | 2014-09-03 | 2014-09-03 | 磁気アニール装置 |
Publications (2)
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JP2016054213A JP2016054213A (ja) | 2016-04-14 |
JP6333128B2 true JP6333128B2 (ja) | 2018-05-30 |
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Country Status (5)
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US (1) | US10254046B2 (ja) |
JP (1) | JP6333128B2 (ja) |
KR (1) | KR101882057B1 (ja) |
CN (1) | CN105386126B (ja) |
TW (1) | TWI645042B (ja) |
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TWI767971B (zh) * | 2017-01-03 | 2022-06-21 | 日商東京威力科創股份有限公司 | 工作件磁化系統及其操作方法 |
CN110243180B (zh) * | 2019-06-18 | 2020-01-17 | 中国科学院重庆绿色智能技术研究院 | 一种高温旋转管式炉 |
CN111952068B (zh) * | 2020-08-07 | 2021-11-30 | 包头市英思特稀磁新材料股份有限公司 | 一种钕铁硼磁体生产用气孔尺寸孔径烧结设备及其实施方法 |
KR102453019B1 (ko) * | 2020-12-21 | 2022-10-11 | 주식회사 이브이첨단소재 | 영구자석을 포함하는 자기장 열처리 장치 |
CN116623294B (zh) * | 2023-07-21 | 2023-09-26 | 常州市乐萌压力容器有限公司 | 一种宝石炉下炉室及其加工工艺 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50106569A (ja) * | 1974-01-11 | 1975-08-22 | ||
JPS6092826U (ja) * | 1983-11-30 | 1985-06-25 | 富士通株式会社 | 熱処理炉 |
JPS6180818A (ja) * | 1984-09-27 | 1986-04-24 | Toshiba Corp | 熱処理炉 |
JPS6347923A (ja) * | 1986-08-18 | 1988-02-29 | Fujitsu Ltd | 熱処理炉の構造 |
JPH10321540A (ja) * | 1997-05-20 | 1998-12-04 | Mitsubishi Electric Corp | アニール炉処理ボート |
US6496648B1 (en) * | 1999-08-19 | 2002-12-17 | Prodeo Technologies, Inc. | Apparatus and method for rapid thermal processing |
JP4423586B2 (ja) * | 2001-04-17 | 2010-03-03 | 日立金属株式会社 | 磁場中熱処理炉 |
US6833107B2 (en) * | 2001-04-17 | 2004-12-21 | Hitachi Metals, Ltd. | Heat-treating furnace with magnetic field and heat treatment method using same |
US6455815B1 (en) * | 2001-11-08 | 2002-09-24 | Despatch Industries, L.L.P. | Magnetic annealing oven and method |
JP3862660B2 (ja) * | 2003-01-06 | 2006-12-27 | ジャパンスーパーコンダクタテクノロジー株式会社 | 磁場中熱処理装置 |
JP2004263206A (ja) | 2003-02-10 | 2004-09-24 | Fuyuutec Furness:Kk | 熱処理装置 |
US7479621B2 (en) * | 2005-12-06 | 2009-01-20 | Praxair Technology, Inc. | Magnetic annealing tool heat exchange system and processes |
US7312422B2 (en) * | 2006-03-17 | 2007-12-25 | Momentive Performance Materials Inc. | Semiconductor batch heating assembly |
JP2008187067A (ja) * | 2007-01-31 | 2008-08-14 | Toyoko Kagaku Co Ltd | 熱処理装置、遮熱用真空バッファー体及び遮熱板 |
JP5088331B2 (ja) * | 2009-01-26 | 2012-12-05 | 東京エレクトロン株式会社 | 熱処理装置用の構成部品及び熱処理装置 |
KR101041143B1 (ko) * | 2009-04-16 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 기판 가공 장치 |
US8998606B2 (en) * | 2011-01-14 | 2015-04-07 | Stion Corporation | Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices |
JP5944281B2 (ja) * | 2012-09-10 | 2016-07-05 | 光洋サーモシステム株式会社 | 熱処理装置 |
US10297481B2 (en) * | 2013-03-21 | 2019-05-21 | Tokyo Electron Limited | Magnetic annealing apparatus |
JP6333126B2 (ja) * | 2014-08-29 | 2018-05-30 | 東京エレクトロン株式会社 | 磁気アニール装置及び磁気アニール方法 |
US9822424B2 (en) * | 2014-12-17 | 2017-11-21 | Tokyo Electron Limited | High rate magnetic annealing system and method of operating |
JP6366515B2 (ja) * | 2015-01-23 | 2018-08-01 | 東京エレクトロン株式会社 | 連結構造及びこれを用いた磁気アニール装置、並びに連結方法 |
JP6318301B2 (ja) * | 2015-02-25 | 2018-04-25 | 株式会社日立国際電気 | 基板処理装置、ヒータおよび半導体装置の製造方法 |
JP6532360B2 (ja) * | 2015-09-16 | 2019-06-19 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
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2014
- 2014-09-03 JP JP2014179343A patent/JP6333128B2/ja active Active
-
2015
- 2015-08-27 KR KR1020150121100A patent/KR101882057B1/ko active IP Right Grant
- 2015-08-31 TW TW104128551A patent/TWI645042B/zh active
- 2015-08-31 US US14/840,486 patent/US10254046B2/en active Active
- 2015-09-02 CN CN201510556876.9A patent/CN105386126B/zh active Active
Also Published As
Publication number | Publication date |
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JP2016054213A (ja) | 2016-04-14 |
KR20160028371A (ko) | 2016-03-11 |
TWI645042B (zh) | 2018-12-21 |
TW201623634A (zh) | 2016-07-01 |
US20160061526A1 (en) | 2016-03-03 |
US10254046B2 (en) | 2019-04-09 |
KR101882057B1 (ko) | 2018-07-25 |
CN105386126B (zh) | 2019-10-11 |
CN105386126A (zh) | 2016-03-09 |
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