JP6332021B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6332021B2 JP6332021B2 JP2014265668A JP2014265668A JP6332021B2 JP 6332021 B2 JP6332021 B2 JP 6332021B2 JP 2014265668 A JP2014265668 A JP 2014265668A JP 2014265668 A JP2014265668 A JP 2014265668A JP 6332021 B2 JP6332021 B2 JP 6332021B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- algan layer
- algan
- gate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 229910002704 AlGaN Inorganic materials 0.000 claims description 186
- 239000013078 crystal Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000010287 polarization Effects 0.000 claims description 6
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 225
- 229910002601 GaN Inorganic materials 0.000 description 47
- 230000000903 blocking effect Effects 0.000 description 11
- 239000002344 surface layer Substances 0.000 description 11
- 239000000969 carrier Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
図1を参照して、本実施形態にかかる半導体装置について説明する。図1に示すように、本実施形態にかかる半導体装置は、スイッチングデバイスとして横型のHEMTを備えた構成とされている。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対してAlGaN層4の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。本実施形態も、第1実施形態に対してAlGaN層4の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第4実施形態について説明する。本実施形態は、第1〜第3実施形態に対してゲート構造部の構成を変更したものであり、その他については第1〜第3実施形態と同様であるため、第1〜第3実施形態と異なる部分についてのみ説明する。なお、ここでは、第1実施形態の構造に対して本実施形態の構造を適用した場合を例に挙げて説明するが、第2、第3実施形態についても同様の構造を適用できる。
本発明の第5実施形態について説明する。本実施形態は、第1〜第4実施形態に対してソース・ドレインの構成を変更したものであり、その他については第1〜第4実施形態と同様であるため、第1〜第4実施形態と異なる部分についてのみ説明する。なお、ここでは、第4実施形態の構造に対して本実施形態の構造を適用した場合を例に挙げて説明するが、第1〜第3実施形態についても同様の構造を適用できる。
本発明の第6実施形態について説明する。本実施形態は、第1〜第5実施形態に対してゲート構造部の構成を変更したものであり、その他については第1〜第5実施形態と同様であるため、第1〜第5実施形態と異なる部分についてのみ説明する。なお、ここでは、第5実施形態の構造に対して本実施形態の構造を適用した場合を例に挙げて説明するが、第1〜第4実施形態についても同様の構造を適用できる。
本発明の第7実施形態について説明する。本実施形態は、第1〜第6実施形態に対してAlGaN層4の構成を変更したものであり、その他については第1〜第6実施形態と同様であるため、第1〜第6実施形態と異なる部分についてのみ説明する。なお、ここでは、第1実施形態の構造に対して本実施形態の構造を適用した場合を例に挙げて説明するが、第2〜第5実施形態についても同様の構造を適用できる。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
3 GaN層
4 AlGaN層
4a〜4d 第1〜第4AlGaN層
5 リセス部
6 ゲート絶縁膜
7 ゲート電極
8 ソース電極
8a SFP
9 ドレイン電極
9a DFP
Claims (7)
- 半絶縁性もしくは半導体にて構成される基板(1)と、
前記基板上に形成され、電子走行層を構成するGaN層(3)および電子供給部を構成するAlGaN層(4)によるヘテロジャンクション構造を有し、前記AlGaN層が部分的に除去されたリセス部(5)が形成されたチャネル形成層と、
前記リセス部内に形成されたゲート絶縁膜(6)および該ゲート絶縁膜の上に形成されたゲート電極(7)を有して構成されるゲート構造部と、
前記チャネル形成層上において、前記ゲート構造部を挟んだ両側に配置されたソース電極(8)およびドレイン電極(9)と、を有し、
前記GaN層と前記AlGaN層との界面における前記GaN層側に2次元電子ガスキャリアを誘起すると共に、前記ゲート電極に対して電圧が印加されたときに前記リセス部の底部における前記GaN層の表面部にチャネルが形成されることで前記ソース電極と前記ドレイン電極との間に電流を流す横型のスイッチングデバイスを備え、
前記AlGaN層は、
2次元電子ガス濃度が決まるAl混晶比に設定された第1AlGaN層(4a)と、
2次元電子ガス濃度が決まるAl混晶比に設定され、かつ、前記第1AlGaN層よりもAl混晶比が小さくされることで負の固定電荷を誘起し、前記ゲート構造部に接しつつ前記ソース電極および前記ドレイン電極から離間して設けられた第2AlGaN層(4b)とを有し、
前記第2AlGaN層は、前記ゲート構造部よりもドレイン側およびソース側に共に形成されていることを特徴とする半導体装置。 - 前記AlGaN層には、前記ゲート構造部の下方を含めた前記第1AlGaN層と前記GaN層との間に配置され、Al混晶比が前記第1AlGaN層および前記第2AlGaN層のAl混晶比よりも大きく、かつ、ピエゾ分極を生じさせない厚さに設定された第3AlGaN層(4c)が備えられていることを特徴とする請求項1に記載の半導体装置。
- 前記AlGaN層には、前記第1AlGaN層と前記ソース電極との間、および、前記第1AlGaN層と前記ドレイン電極との間に、Al混晶比が前記第1AlGaN層および前記第2AlGaN層のAl混晶比よりも大きくされた第4AlGaN層(4d)が備えられていることを特徴とする請求項1または2に記載の半導体装置。
- 前記ゲート構造部は、前記ゲート電極に接続され、前記ドレイン側に張り出した上部(11)を有していることを特徴とする請求項1ないし3のいずれか1つに記載の半導体装置。
- 前記ソース電極には、前記ドレイン側に張り出したソースフィールドプレート(8a)が備えられていることを特徴とする請求項1ないし4のいずれか1つに記載の半導体装置。
- 前記ドレイン電極には、前記ソース側に張り出したドレインフィールドプレート(9a)が備えられていることを特徴とする請求項1ないし5のいずれか1つに記載の半導体装置。
- 前記ゲート電極は、前記ドレイン側に張り出し、前記第2AlGaN層に対向させられたテラス部(7a)を有していることを特徴とする請求項1ないし6のいずれか1つに記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014265668A JP6332021B2 (ja) | 2014-12-26 | 2014-12-26 | 半導体装置 |
CN201580070212.XA CN107112241B (zh) | 2014-12-26 | 2015-12-08 | 半导体装置 |
US15/531,015 US10109727B2 (en) | 2014-12-26 | 2015-12-08 | Semiconductor device |
PCT/JP2015/006089 WO2016103603A1 (ja) | 2014-12-26 | 2015-12-08 | 半導体装置 |
DE112015005817.6T DE112015005817T5 (de) | 2014-12-26 | 2015-12-08 | Halbleitervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014265668A JP6332021B2 (ja) | 2014-12-26 | 2014-12-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016127089A JP2016127089A (ja) | 2016-07-11 |
JP6332021B2 true JP6332021B2 (ja) | 2018-05-30 |
Family
ID=56149673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014265668A Expired - Fee Related JP6332021B2 (ja) | 2014-12-26 | 2014-12-26 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10109727B2 (ja) |
JP (1) | JP6332021B2 (ja) |
CN (1) | CN107112241B (ja) |
DE (1) | DE112015005817T5 (ja) |
WO (1) | WO2016103603A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6230456B2 (ja) * | 2014-03-19 | 2017-11-15 | 株式会社東芝 | 半導体装置 |
CN107924845A (zh) * | 2015-08-28 | 2018-04-17 | 夏普株式会社 | 氮化物半导体器件 |
ITUB20155862A1 (it) * | 2015-11-24 | 2017-05-24 | St Microelectronics Srl | Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione |
US11522078B2 (en) * | 2017-07-07 | 2022-12-06 | Indian Institute Of Science | High electron mobility transistor (HEMT) with RESURF junction |
CN110034186B (zh) * | 2018-01-12 | 2021-03-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于复合势垒层结构的iii族氮化物增强型hemt及其制作方法 |
JP7092188B2 (ja) * | 2018-04-19 | 2022-06-28 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
US11626513B2 (en) * | 2018-12-13 | 2023-04-11 | Intel Corporation | Antenna gate field plate on 2DEG planar FET |
JP7231824B2 (ja) * | 2019-03-29 | 2023-03-02 | 富士通株式会社 | 半導体装置、半導体装置の製造方法及び電子装置 |
JP7448314B2 (ja) * | 2019-04-19 | 2024-03-12 | 株式会社東芝 | 半導体装置 |
US10930745B1 (en) * | 2019-11-27 | 2021-02-23 | Vanguard International Semiconductor Corporation | Semiconductor structure |
JP7443788B2 (ja) | 2020-01-24 | 2024-03-06 | 富士通株式会社 | 半導体装置 |
US11888051B2 (en) * | 2020-05-08 | 2024-01-30 | Globalfoundries Singapore Pte. Ltd. | Structures for a high-electron-mobility transistor and related methods |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09321060A (ja) * | 1996-05-28 | 1997-12-12 | Murata Mfg Co Ltd | 電界効果トランジスタとその製造方法 |
JP4592938B2 (ja) * | 1999-12-08 | 2010-12-08 | パナソニック株式会社 | 半導体装置 |
JP4041075B2 (ja) | 2004-02-27 | 2008-01-30 | 株式会社東芝 | 半導体装置 |
US7709859B2 (en) * | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
JP5093991B2 (ja) | 2005-03-31 | 2012-12-12 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
US8519438B2 (en) * | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
JP2010135640A (ja) * | 2008-12-05 | 2010-06-17 | Panasonic Corp | 電界効果トランジスタ |
JP2011077122A (ja) * | 2009-09-29 | 2011-04-14 | Oki Electric Industry Co Ltd | ゲートリセスの形成方法、AlGaN/GaN−HEMTの製造方法及びAlGaN/GaN−HEMT |
JP2011204717A (ja) * | 2010-03-24 | 2011-10-13 | Sanken Electric Co Ltd | 化合物半導体装置 |
JP2011228428A (ja) * | 2010-04-19 | 2011-11-10 | Toyoda Gosei Co Ltd | Iii族窒化物半導体からなる半導体装置およびその製造方法、電力変換装置 |
JP5749580B2 (ja) * | 2011-06-16 | 2015-07-15 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2013125126A1 (ja) | 2012-02-23 | 2013-08-29 | 日本碍子株式会社 | 半導体素子および半導体素子の製造方法 |
JP6016440B2 (ja) * | 2012-04-26 | 2016-10-26 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
JP2013229458A (ja) | 2012-04-26 | 2013-11-07 | Mitsubishi Electric Corp | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
JP2013229486A (ja) * | 2012-04-26 | 2013-11-07 | Mitsubishi Electric Corp | ヘテロ接合電界効果トランジスタ及びその製造方法 |
US20140335666A1 (en) * | 2013-05-13 | 2014-11-13 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics |
JP2015008244A (ja) * | 2013-06-26 | 2015-01-15 | 三菱電機株式会社 | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
CN103811542B (zh) * | 2013-12-04 | 2016-07-06 | 华南师范大学 | 一种锡化物超晶格势垒半导体晶体管 |
JP6270572B2 (ja) * | 2014-03-19 | 2018-01-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2014
- 2014-12-26 JP JP2014265668A patent/JP6332021B2/ja not_active Expired - Fee Related
-
2015
- 2015-12-08 DE DE112015005817.6T patent/DE112015005817T5/de not_active Ceased
- 2015-12-08 WO PCT/JP2015/006089 patent/WO2016103603A1/ja active Application Filing
- 2015-12-08 CN CN201580070212.XA patent/CN107112241B/zh active Active
- 2015-12-08 US US15/531,015 patent/US10109727B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN107112241A (zh) | 2017-08-29 |
CN107112241B (zh) | 2020-09-01 |
JP2016127089A (ja) | 2016-07-11 |
WO2016103603A1 (ja) | 2016-06-30 |
US20170345919A1 (en) | 2017-11-30 |
DE112015005817T5 (de) | 2017-09-14 |
US10109727B2 (en) | 2018-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6332021B2 (ja) | 半導体装置 | |
KR101813177B1 (ko) | 고전자이동도 트랜지스터 및 그 제조방법 | |
JP4542912B2 (ja) | 窒素化合物半導体素子 | |
JP6767741B2 (ja) | 窒化物半導体装置およびその製造方法 | |
US20160336437A1 (en) | Field effect transistor | |
JP5383652B2 (ja) | 電界効果トランジスタ及びその製造方法 | |
JP5190923B2 (ja) | GaNをチャネル層とする窒化物半導体トランジスタ及びその作製方法 | |
JP2012054471A (ja) | 半導体装置及びその製造方法、電源装置 | |
JP2010103425A (ja) | 窒化物半導体装置 | |
JP6507983B2 (ja) | 窒化物半導体装置 | |
JP6496149B2 (ja) | 半導体装置および半導体装置の製造方法 | |
KR20140011791A (ko) | 고전자이동도 트랜지스터 및 그 제조방법 | |
KR20140130598A (ko) | 고전자이동도 트랜지스터 및 그 제조 방법 | |
KR102071019B1 (ko) | 노멀리 오프 타입 트랜지스터 및 그 제조방법 | |
JPWO2010016564A1 (ja) | 半導体装置 | |
JP6311668B2 (ja) | 半導体装置 | |
JP6331907B2 (ja) | 半導体装置 | |
JP2016058721A (ja) | 半導体装置 | |
JP2008153350A (ja) | 半導体装置 | |
JP2015126034A (ja) | 電界効果型半導体素子 | |
KR20190112523A (ko) | 이종접합 전계효과 트랜지스터 및 그 제조 방법 | |
JP6575224B2 (ja) | 半導体装置 | |
TW201445737A (zh) | 增強型氮化鎵電晶體及其形成方法 | |
KR102005451B1 (ko) | 고전자 이동도 트랜지스터 | |
JP6264270B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180126 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180403 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180416 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6332021 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |