JP6315419B2 - Semiconductor inspection method, semiconductor inspection apparatus, and semiconductor manufacturing method - Google Patents
Semiconductor inspection method, semiconductor inspection apparatus, and semiconductor manufacturing method Download PDFInfo
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Description
本発明は、半導体ウエハー（Ｗａｆｅｒ）の外観検査等に用いて好適な、半導体検査方法、半導体検査装置及び半導体製造方法に関する。 The present invention relates to a semiconductor inspection method, a semiconductor inspection apparatus, and a semiconductor manufacturing method suitable for use in appearance inspection of a semiconductor wafer (Wafer).
半導体は１枚のウエハー（Ｗａｆｅｒ）上に同一のパターン（Ｐａｔｔｅｒｎ）を持つチップ（Ｃｈｉｐ（ダイ；Ｄｉｅ））やセル（Ｃｅｌｌ）を多数転写し作成する。外観検査装置においては、各チップやセルの同一パターン部分の画像を比較することで、欠陥の有無を判別することができる（例えば特許文献１）。 A semiconductor is prepared by transferring a large number of chips (Chips) having the same pattern (Pattern) and cells (Cells) on a single wafer. In the appearance inspection apparatus, it is possible to determine the presence or absence of a defect by comparing images of the same pattern portion of each chip or cell (for example, Patent Document 1).
半導体デバイス（Ｄｅｖｉｃｅ）の微細化に伴い、検出すべき欠陥のサイズ（Ｓｉｚｅ）も微細化している。このため、半導体デバイスの外観検査においては、欠陥信号は微弱になっている。ここで欠陥信号とは、同一パターンを有する２領域の各画像信号の差（すなわち画素値あるいは輝度値の差）に基づく信号（例えば各画素値の差が所定の閾値より大きな信号）であって、実際の構造物の欠損や異物に対応して発生した信号を意味する。光学画像を用いた外観検査装置においては、欠陥信号と様々な要因によって画像中に生じるノイズ（Ｎｏｉｓｅ）を区別することが困難になっており、欠陥信号のみを抽出し検出することが非常に重要となっている。 With the miniaturization of semiconductor devices (Devices), the size of defects to be detected (Size) is also miniaturized. For this reason, the defect signal is weak in the appearance inspection of the semiconductor device. Here, the defect signal is a signal (for example, a signal in which the difference between the pixel values is larger than a predetermined threshold value) based on the difference between the image signals of two regions having the same pattern (that is, the difference in pixel value or luminance value). It means a signal generated in response to an actual structure defect or foreign matter. In an appearance inspection apparatus using an optical image, it is difficult to distinguish between a defect signal and noise (Noise) generated in the image due to various factors, and it is very important to extract and detect only the defect signal. It has become.
外観検査装置においては、欠陥信号とノイズ信号を区別するため閾値を設定し、閾値以下の信号は検出しないようにしている。しかし、昨今の超微細欠陥からの欠陥信号は、ノイズと同程度になり、検出が非常に困難である。従来、欠陥信号をノイズに対して大きくするために、光源光量を増加させる、また露光時間を長くする等の対策がなされているが、検出器のショット（Ｓｈｏｔ）ノイズや様々な要因によるノイズを低減する対策はなされていない。 In the appearance inspection apparatus, a threshold value is set to distinguish a defect signal from a noise signal, and signals below the threshold value are not detected. However, the defect signal from the recent ultra-fine defect is almost the same as noise and is very difficult to detect. Conventionally, in order to increase the defect signal with respect to noise, measures such as increasing the light source light amount and increasing the exposure time have been taken, but detector shot noise and noise caused by various factors have been taken. There are no measures to reduce it.
本発明は、上記の事情を考慮してなされたものであり、上記のノイズを低減することが可能な半導体検査方法、半導体検査装置及び半導体製造方法を提供することを目的とする。 The present invention has been made in consideration of the above-described circumstances, and an object thereof is to provide a semiconductor inspection method, a semiconductor inspection apparatus, and a semiconductor manufacturing method capable of reducing the noise.
上記課題を解決するため、本発明の半導体検査方法は、ウエハーを搭載したステージを所定方向に移動させながら前記ウエハー上で同一パターンを有する第１及び第２領域をそれぞれ複数回撮像し、前記第１領域を撮像した複数の第１画像と、前記第２領域を撮像した複数の第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における欠陥の有無を判定する半導体検査方法であって、前記互いに対応する画素値の差が、前記第１領域を撮像した複数の第１画像の各画素値を、前記複数の第１画像間で互いに対応する画素毎に平均した値と、前記第２領域を撮像した複数の第２画像の各画素値を、前記複数の第２画像間で互いに対応する画素毎に平均した値との差であることを特徴とする。 In order to solve the above-described problem, in the semiconductor inspection method of the present invention, the first and second regions having the same pattern are imaged a plurality of times on the wafer while moving the stage on which the wafer is mounted in a predetermined direction. By determining the difference in pixel values corresponding to each other between a plurality of first images obtained by imaging one area and a plurality of second images obtained by imaging the second area, the presence / absence of a defect in the area is determined. In the semiconductor inspection method, the difference between the corresponding pixel values indicates that each pixel value of the plurality of first images obtained by imaging the first region is different for each corresponding pixel between the plurality of first images. It is a difference between an average value and a value obtained by averaging each pixel value of a plurality of second images obtained by imaging the second region for each pixel corresponding to each other between the plurality of second images. .
また、本発明の他の半導体検査方法は、前記互いに対応する画素値の差を求める際に、前記複数回の撮像間で画素毎に位置合わせを行うことを特徴とする。 In another semiconductor inspection method of the present invention, when the difference between the corresponding pixel values is obtained, alignment is performed for each pixel between the plurality of imaging operations.
また、本発明の他の半導体検査方法は、前記撮像の回数を、前記互いに対応する画素値の差の統計量に応じて設定することを特徴とする。 Another semiconductor inspection method of the present invention is characterized in that the number of times of imaging is set according to a statistic of a difference between corresponding pixel values.
また、本発明の他の半導体検査方法は、前記当該領域における欠陥の有無を判定する際に、前記第１領域を撮像した１の前記第１画像と、前記第２領域を撮像した１の前記第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における前記撮像１回分の欠陥の有無の判定結果を得て、前記複数回における欠陥検出率に応じて、前記当該領域における欠陥の有無を判定することを特徴とする。 In another semiconductor inspection method of the present invention, when determining the presence / absence of a defect in the area, the first image obtained by imaging the first area and the first image obtained by imaging the second area. By obtaining a difference in pixel values corresponding to each other with the second image, a determination result of the presence or absence of the defect for the one imaging in the region is obtained, and according to the defect detection rate in the plurality of times, The presence or absence of a defect in the region is determined.
また、本発明の他の半導体検査方法は、前記撮像複数回分の前記撮像１回分の判定結果に応じて、前記当該領域における欠陥の有無を判定する際に、前記互いに対応する画素値の差の値と、当該画素の周辺画素の前記互いに対応する画素値の差とに応じて、位置合わせの基準となる画素を設定し、前記複数の撮像間で画素毎に位置合わせを行うことを特徴とする。 Further, according to another semiconductor inspection method of the present invention, when determining the presence / absence of a defect in the area according to the determination result for the imaging multiple times, the difference between the corresponding pixel values is determined. A pixel serving as a reference for alignment is set according to a value and a difference between the corresponding pixel values of neighboring pixels of the pixel, and alignment is performed for each pixel between the plurality of imaging. To do.
また、本発明の半導体検査装置は、ウエハーを搭載したステージを所定方向に移動させながら前記ウエハー上で同一パターンを有する第１及び第２領域をそれぞれ複数回撮像し、前記第１領域を撮像した複数の第１画像と、前記第２領域を撮像した複数の第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における欠陥の有無を判定する半導体検査装置であって、前記互いに対応する画素値の差が、前記第１領域を撮像した複数の第１画像の各画素値を、前記複数の第１画像間で互いに対応する画素毎に平均した値と、前記第２領域を撮像した複数の第２画像の各画素値を、前記複数の第２画像間で互いに対応する画素毎に平均した値との差であることを特徴とする。 In the semiconductor inspection apparatus of the present invention, the first and second regions having the same pattern are imaged a plurality of times on the wafer while moving the stage on which the wafer is mounted in a predetermined direction, and the first region is imaged. a plurality of first image, between a plurality of second images obtained by imaging the second region, by obtaining the difference between the corresponding pixel values from each other, in the semiconductor inspection device determine the presence or absence of defects in the region The difference between the pixel values corresponding to each other is a value obtained by averaging the pixel values of the plurality of first images obtained by imaging the first region for each of the pixels corresponding to each other between the plurality of first images; The pixel values of a plurality of second images obtained by imaging the second region are differences from values obtained by averaging the pixel values corresponding to each other between the plurality of second images .
また、本発明の半導体製造方法は、ウエハーを搭載したステージを所定方向に移動させながら前記ウエハー上で同一パターンを有する第１及び第２領域をそれぞれ複数回撮像し、前記第１領域を撮像した複数の第１画像と、前記第２領域を撮像した複数の第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における欠陥の有無を判定する検査工程を含む半導体製造方法であって、前記互いに対応する画素値の差が、前記第１領域を撮像した複数の第１画像の各画素値を、前記複数の第１画像間で互いに対応する画素毎に平均した値と、前記第２領域を撮像した複数の第２画像の各画素値を、前記複数の第２画像間で互いに対応する画素毎に平均した値との差であることを特徴とする。 In the semiconductor manufacturing method of the present invention, the first and second regions having the same pattern are imaged a plurality of times on the wafer while moving the stage on which the wafer is mounted in a predetermined direction, and the first region is imaged. a plurality of first images, said between a plurality of second images of the second region imaged, by obtaining the difference between the corresponding pixel values from each other, including determining inspection process for defects in the area In the semiconductor manufacturing method, the difference between the corresponding pixel values is an average of the pixel values of the plurality of first images obtained by imaging the first region for each of the corresponding pixels between the plurality of first images. It is a difference between the obtained value and a value obtained by averaging each pixel value of a plurality of second images obtained by imaging the second region for each corresponding pixel between the plurality of second images .
本発明では、ウエハーを搭載したステージを所定方向に移動させながらウエハー上で同一パターンを有する第１及び第２領域をそれぞれ複数回撮像し、第１領域を撮像した複数の第１画像と、第２領域を撮像した複数の第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における欠陥の有無を判定する。この構成によれば、１回の撮像で取得した２領域の画像間のみから互いに対応する画素値の差を求める場合と比較し、容易に、ノイズを低減することができる。 In the present invention, the first and second regions having the same pattern are imaged a plurality of times on the wafer while moving the stage on which the wafer is mounted in a predetermined direction, and a plurality of first images obtained by imaging the first region, The difference in pixel values corresponding to each other from a plurality of second images obtained by imaging two regions is determined to determine the presence / absence of a defect in the region. According to this configuration, it is possible to easily reduce noise as compared with a case where a difference between corresponding pixel values is obtained only from the images of two regions acquired by one imaging.
以下、図面を参照して本発明の実施の形態について説明する。図１は、本発明の一実施形態としての半導体検査装置１の基本的な構成例を示したブロック図である。図２は、図１に示した半導体検査装置１の基本的な動作例を説明するためのフローチャートである。 Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing a basic configuration example of a semiconductor inspection apparatus 1 as an embodiment of the present invention. FIG. 2 is a flowchart for explaining a basic operation example of the semiconductor inspection apparatus 1 shown in FIG.
図１に示した半導体検査装置１は、撮像部２と、ステージ（Ｓｔａｇｅ）３と、制御部４とを備えている。撮像部２は、例えば、ＣＣＤ（電荷結合素子）１次元ラインセンサ等の撮像素子、撮像素子の入光部に設けられた光学系、照明用の光源、撮像素子の駆動や出力信号の変換部等を有し、ステージ３上に搭載された図示していないウエハーで反射された光信号を電気信号に変換して出力する。ステージ３は、図示していないウエハーを着脱可能に固定し、制御部４から入力した制御信号に応じてウエハーを前後左右上下あるいは所定の回転方向に移動させる。 The semiconductor inspection apparatus 1 shown in FIG. 1 includes an imaging unit 2, a stage (Stage) 3, and a control unit 4. The image pickup unit 2 includes, for example, an image pickup device such as a CCD (charge coupled device) one-dimensional line sensor, an optical system provided in a light incident portion of the image pickup device, a light source for illumination, a drive of the image pickup device, and an output signal conversion unit. The optical signal reflected by a wafer (not shown) mounted on the stage 3 is converted into an electrical signal and output. The stage 3 detachably fixes a wafer (not shown) and moves the wafer back and forth, right and left, up and down, or in a predetermined rotation direction in accordance with a control signal input from the control unit 4.
制御部４は、図示していないウエハーを搭載したステージ３を所定方向に移動させながら。撮像部２を用いて、ウエハー上で同一パターンを有する領域Ａ（第１領域）及び領域Ｂ（第２領域）を含む所定の複数領域を、それぞれ複数回撮像する。制御部４は、また、領域Ａを撮像した複数の画像（以下、領域Ａの画像を第１画像とする）と、領域Ｂを撮像した複数の画像（以下、領域Ｂの画像を第２画像とする）との間で、互いに対応する画素値の差を求めることで、当該領域Ａ又は領域Ｂにおける欠陥の有無を判定する。 The controller 4 moves the stage 3 on which a wafer (not shown) is mounted in a predetermined direction. The imaging unit 2 is used to image a plurality of predetermined regions including a region A (first region) and a region B (second region) having the same pattern on the wafer a plurality of times. The control unit 4 also includes a plurality of images obtained by imaging the region A (hereinafter, the image of the region A is referred to as a first image) and a plurality of images obtained by imaging the region B (hereinafter, the image of the region B is a second image). The difference in pixel values corresponding to each other is determined to determine whether or not there is a defect in the region A or region B.
その際、制御部４は、例えば図２に示したように、まず、ステージ３を所定の方向に移動させながら撮像部２が所定のフレーム周期で繰り返し撮像した画像信号を、所定のサンプリング周期で繰り返し取得することで、画像スキャン（すなわち取得位置を走査しながらの画像取得）を実行する（ステップＳ１）。ステージ３の移動方向や、ウエハー上の各領域の撮像順序は、特に限定されない。例えば、図３に示したように、矢印でそれぞれ示した１回目のスキャン（１番上の矢印）に対し２回目のスキャンは垂直方向にスキャン位置を変えて逆方向にスキャンする。これを繰り返すことでウエハー５全面を走査する。そして、１番下のスキャンを終了したら、再び１番上からスキャンしたり、下から２番目の矢印のようにスキャンしたりすることで２回目の画像スキャンを行う。このスキャン動作を同一領域について指定回数分の画像が取得されるまで繰り返し行う（ステップＳ２からステップＳ１の繰り返し）。ここで、ステップＳ２の所定回数は２以上である。 At that time, for example, as shown in FIG. 2, the control unit 4 first, at a predetermined sampling cycle, captures an image signal repeatedly captured at a predetermined frame cycle by the imaging unit 2 while moving the stage 3 in a predetermined direction. By repeatedly acquiring, image scanning (that is, image acquisition while scanning the acquisition position) is executed (step S1). The moving direction of the stage 3 and the imaging order of each area on the wafer are not particularly limited. For example, as shown in FIG. 3, the second scan scans in the opposite direction by changing the scan position in the vertical direction with respect to the first scan (uppermost arrow) indicated by the arrows. By repeating this, the entire surface of the wafer 5 is scanned. When the bottom scan is completed, the second image scan is performed by scanning again from the top or scanning as indicated by the second arrow from the bottom. This scanning operation is repeated until the specified number of images are acquired for the same region (repetition from step S2 to step S1). Here, the predetermined number of times in step S2 is 2 or more.
なお、図３から図５は画像スキャンの仕方の例を説明するための説明図であり、ウエハー５を模式的に示すとともに、ウエハー５上のスキャン位置及び方向を矢印を付けた細線で模式的に示している。図３から図５に示した矢印は、ウエハー５を基準として相対的なスキャン位置と方向の変化を示したものであり、本実施形態では撮像部２は固定されていて、ウエハー５が移動する。ただし、撮像部２を移動させたり、撮像部２の移動とウエハー５の移動（つまりステージ３の移動）とを組み合わせたりしてもよい。また、図３から図５に示した例では、ウエハー５上には、同一のパターンを有する複数のチップ６が形成されている。 3 to 5 are explanatory diagrams for explaining an example of how to scan an image. The wafer 5 is schematically shown, and the scan position and direction on the wafer 5 are schematically shown by thin lines with arrows. It shows. The arrows shown in FIG. 3 to FIG. 5 indicate changes in the relative scan position and direction relative to the wafer 5. In this embodiment, the imaging unit 2 is fixed and the wafer 5 moves. . However, the imaging unit 2 may be moved, or the movement of the imaging unit 2 and the movement of the wafer 5 (that is, the movement of the stage 3) may be combined. In the example shown in FIGS. 3 to 5, a plurality of chips 6 having the same pattern are formed on the wafer 5.
また、図４に示したように、１回目のスキャンに対して２回目以降のスキャンもスキャン位置を変更せず、同一箇所を往復スキャンするようにしてもよい。この場合は、指定回数（この例では４回）のスキャンが完了するまで同一箇所の往復スキャンを繰返す。その後、垂直方向の位置を変更して、再度複数回往復スキャンを行う。あるいは、図５に示したように、図３に示した右方向へのスキャンと次に垂直方向に移動した位置での左方向へのスキャンとを１組として、１回分の垂直方向の位置変更を伴いながら、２回１組のスキャンを指定回数（この例では３回）繰り返し行い、その後、垂直方向の２回分の位置変更を行って同様の２回１組のスキャンを繰り返して行うようにしてもよい。 Further, as shown in FIG. 4, the second and subsequent scans may be reciprocally scanned at the same location without changing the scan position with respect to the first scan. In this case, the reciprocating scan of the same location is repeated until the designated number of scans (4 times in this example) is completed. Thereafter, the position in the vertical direction is changed and the reciprocating scan is performed a plurality of times again. Alternatively, as shown in FIG. 5, the vertical position change for one time is performed with one set of the scan in the right direction shown in FIG. 3 and the scan in the left direction at the position moved in the vertical direction. In this case, one set of scans is repeated twice for the specified number of times (in this example, three times), and then the same two sets of scans are repeated by changing the position in the vertical direction twice. May be.
次に、制御部４は、ウエハー５上の同一パターンの領域Ａと領域Ｂについて、領域Ａで取得された複数の画像と領域Ｂで取得された複数の画像との間で互いに対応する画素値の差を求めることで欠陥を検出する（ステップＳ３）。ここで領域Ａと領域Ｂとは、例えば図３に示したように同一パターンを有する２つのチップ６毎の全領域又はチップ６内で対応する一部の領域であってもよいし、例えばチップ６内に同一パターンの複数のセルが形成されている場合にはセル毎の全領域又はセル内で対応する一部の領域であってもよい。 Next, for the regions A and B of the same pattern on the wafer 5, the control unit 4 corresponds to pixel values corresponding to each other between the plurality of images acquired in the region A and the plurality of images acquired in the region B. The defect is detected by obtaining the difference between them (step S3). Here, the area A and the area B may be, for example, the entire area for every two chips 6 having the same pattern as shown in FIG. In the case where a plurality of cells having the same pattern are formed in 6, the entire region for each cell or a part of the corresponding region in the cell may be used.
次に、図２に示したステップＳ３における、領域Ａ及びＢで取得された各複数の画像を用いた欠陥の検出処理について２つの例を挙げ、第１実施形態及び第２実施形態として説明する。 Next, two examples of defect detection processing using each of the plurality of images acquired in the areas A and B in step S3 shown in FIG. 2 will be described as the first embodiment and the second embodiment. .
［第１実施形態］
検査画像上の撮像素子のショットノイズ、光源の揺らぎ等によるノイズ信号の発生位置はランダム（Ｒａｎｄｏｍ）である。それに対して、欠陥信号は常に一定の場所で発生する。従って、同一箇所の画像を複数枚取得し、平均化した画像を生成すると、欠陥信号は平均化により低減せず残るが、ノイズ信号は平均化により低減される。そこで、第１実施形態では、制御部４が、ステップＳ３で、平均化された画像を用いて検査を行う。これにより、第１実施形態では、欠陥をより高感度で検出することが可能になる。つまり、第１実施形態では、ステップＳ３において制御部４が、領域Ａを撮像した複数の第１画像の各画素値を、複数の第１画像間で互いに対応する画素毎に平均した値と、領域Ｂを撮像した複数の第２画像の各画素値を、複数の第２画像間で互いに対応する画素毎に平均した値との差を求め、領域Ａ又はＢにおける欠陥の有無を判定する。
[First Embodiment]
The generation position of the noise signal due to shot noise of the image sensor, fluctuation of the light source, etc. on the inspection image is random. On the other hand, the defect signal is always generated at a certain place. Accordingly, when a plurality of images of the same location are acquired and an averaged image is generated, the defect signal remains without being reduced by averaging, but the noise signal is reduced by averaging. Therefore, in the first embodiment, the control unit 4 performs an inspection using the averaged image in step S3. Thereby, in 1st Embodiment, it becomes possible to detect a defect with higher sensitivity. That is, in the first embodiment, in step S3, the control unit 4 averages the pixel values of the plurality of first images obtained by imaging the region A for each of the corresponding pixels between the plurality of first images, A difference between each pixel value of the plurality of second images obtained by imaging the region B and a value obtained by averaging each pixel corresponding to each other between the plurality of second images is obtained, and the presence / absence of a defect in the region A or B is determined.
図６に示したように、第１実施形態において、制御部４は、例えば、領域Ａ及び領域Ｂの各領域で同一箇所のスキャン画像１００を複数回（図６では６回）取得する（図２のステップＳ１からＳ２）。図６は、図３から図５に示したチップ６内の同一箇所（すなわちチップ６内の同一座標の一部又はチップ６全体）の画像を、スキャン画像１００として模式的に示した図である。この場合、スキャン画像１００において、正常な信号をグレーで、ノイズ信号１０１を白点又はサイズが小さな黒点で、そして、欠陥信号１１１をサイズが大きな黒点で示している。図６に示した撮像１回目から６回目までの６枚のスキャン画像１００の画素値を、対応する画素毎（すなわち同一座標の画素毎）に平均した画素値を有する平均画像１１０では、欠陥信号１１１が黒のまま残り、ノイズ信号１０１がグレーに変化している。 As shown in FIG. 6, in the first embodiment, the control unit 4 acquires, for example, the scan image 100 at the same location in each of the regions A and B multiple times (six times in FIG. 6) (see FIG. 6). 2 steps S1 to S2). FIG. 6 is a diagram schematically showing an image of the same location in the chip 6 shown in FIGS. 3 to 5 (that is, a part of the same coordinates in the chip 6 or the entire chip 6) as a scan image 100. . In this case, in the scanned image 100, a normal signal is indicated by gray, a noise signal 101 is indicated by a white point or a small black point, and a defect signal 111 is indicated by a large black point. In the average image 110 having pixel values obtained by averaging the pixel values of the six scanned images 100 from the first imaging to the sixth imaging shown in FIG. 6 for each corresponding pixel (that is, for each pixel having the same coordinate), the defect signal 111 remains black and the noise signal 101 changes to gray.
例えば比較対象となる２つの領域Ａと領域Ｂにおいて、領域Ａが欠陥を含み、領域Ｂが欠陥を含んでいないとすれば、図６の例では、領域Ａの複数の画像の平均画像１１０が一点の黒点を含む画像となり、領域Ｂの複数の画像の平均画像１１０がすべての画素がグレーの画像となる。この場合、領域Ａの平均画像と、領域Ｂの平均画像との間の、対応する各画素の画素値の差は、領域Ａで欠陥がある座標の画素に対応する差の値のみが大きな値となる。欠陥の有無を、画素値の差と所定の閾値との比較結果に基づいて行う場合、すなわち各画素間の差の値を所定の閾値と比較することで欠陥の有無を判定する場合、領域Ａで欠陥がある座標の画素に対応する画素値間の差の値のみが欠陥として判定され、ノイズ信号は欠陥として判定されなくなる（あるいは判定されにくくなる）。 For example, in the two regions A and B to be compared, if the region A includes a defect and the region B does not include a defect, in the example of FIG. An image including one black point is obtained, and an average image 110 of a plurality of images in the region B is an image in which all pixels are gray. In this case, the difference in the pixel value of each corresponding pixel between the average image of the region A and the average image of the region B is a value in which only the difference value corresponding to the pixel of the coordinate having a defect in the region A is a large value. It becomes. When the presence / absence of a defect is determined based on a comparison result between a difference between pixel values and a predetermined threshold value, that is, when the presence / absence of a defect is determined by comparing the difference value between pixels with a predetermined threshold value, the region A Thus, only the difference value between pixel values corresponding to pixels with coordinates having a defect is determined as a defect, and the noise signal is not determined as a defect (or is difficult to determine).
なお、複数回のスキャンにより平均化された画像中のノイズ信号は、図７に示すスキャン回数依存性を持つ。図７は、横軸にスキャン回数（つまり平均する画像の枚数）をとり、縦軸にノイズ信号の平均化後のレベルをとって、ランダムにノイズを発生させた場合のノイズ信号の平均化後のレベルの変化を表した図である。ノイズ信号はスキャン回数を増やすごとに減衰する。しかしノイズ信号減衰率はスキャン回数の増加に従って、徐々に小さくなる。スキャン回数の指定においては、必要な感度と検査速度に応じて、欠陥信号がノイズ信号を上回るスキャン回数に設定する。例えば、比較対象の互いに対応する２画素値の差の値の実測値や計算値の平均、標準偏差、分散等の統計量（すなわち統計的な手法で算出された値）に応じて設定することができる。なお、スキャン回数の設定は、後述する第２実施形態においても同様とすることができる。 Note that the noise signal in the image averaged by a plurality of scans has the scan number dependency shown in FIG. In FIG. 7, the horizontal axis represents the number of scans (that is, the number of images to be averaged), and the vertical axis represents the level after noise signal averaging, and after noise signal averaging when random noise is generated. It is a figure showing the change of the level of. The noise signal attenuates as the number of scans increases. However, the noise signal attenuation rate gradually decreases as the number of scans increases. In specifying the number of scans, the number of scans where the defect signal exceeds the noise signal is set according to the required sensitivity and inspection speed. For example, it is set according to a statistical value (that is, a value calculated by a statistical method) such as an actual value, a calculated value average, a standard deviation, or a variance of a difference value between two pixel values corresponding to each other to be compared. Can do. The setting of the number of scans can be the same in the second embodiment described later.
また、ステップＳ３の処理において、制御部４は、互いに対応する画素値の差を求める際に、複数回の撮像間で画素毎にアライメント（すなわち位置合わせ）処理を行うことができる。平均化した画像を生成する際においては、ステージ３の精度により必ず画像取得位置にはズレが生じる。このため、取得した複数の画像にアライメント（Ａｌｉｇｎｍｅｎｔ）処理を行った上で平均化処理を行うことが望ましい。アライメント処理においては、アライメント処理を行う画像同士をシフト（Ｓｈｉｆｔ）させながら比較し、正規化相関係数が最も大きくなる位置同士を、ウエハー５上の同一位置を撮像した像とする。複数回取得した画像すべてに対して、アライメント処理を適用し、同一位置同士を平均化することで平均化した画像を生成する。また、図８に示したように、アライメントの際には、各画像のズレ量に応じて非検査領域が発生するため、次の領域（Ａｒｅａ）をスキャンする際には、一定の領域を重複してスキャンする。なお、図８は、アライメント処理の一例を説明するための説明図である。図８では、１回目の撮像画像２０１と、２回目の撮像画像２０２と、３回目の撮像画像２０３とに垂直方向のズレが生じている。そして、ズレ量に合わせて画像同士をシフトした状態を画像２０１ａ、画像２０２ａ及び画像２０３ａとして示し、非検査領域を間隔が広い斜線の網掛け領域で示している。 Further, in the process of step S3, the control unit 4 can perform an alignment (ie, alignment) process for each pixel between a plurality of times of imaging when obtaining a difference between corresponding pixel values. When the averaged image is generated, the image acquisition position is always shifted due to the accuracy of the stage 3. For this reason, it is desirable to perform an averaging process after performing an alignment process on a plurality of acquired images. In the alignment process, the images to be subjected to the alignment process are compared while being shifted, and the positions where the normalized correlation coefficient is the largest are taken as images obtained by imaging the same position on the wafer 5. An alignment process is applied to all the images acquired a plurality of times, and averaged images are generated by averaging the same positions. Further, as shown in FIG. 8, in alignment, a non-inspection area is generated according to the shift amount of each image. Therefore, when scanning the next area (Area), a certain area is overlapped. And scan. FIG. 8 is an explanatory diagram for explaining an example of the alignment process. In FIG. 8, vertical deviation occurs in the first captured image 201, the second captured image 202, and the third captured image 203. A state in which the images are shifted in accordance with the shift amount is shown as an image 201a, an image 202a, and an image 203a, and a non-inspection area is indicated by a hatched shaded area with a wide interval.
第１実施形態によれば、欠陥を含む同一箇所の画像を複数回取得し、平均化した画像を用いて検査を行うため、常に同じ位置に発生する欠陥信号を低減することなく、ランダムに生じるノイズ信号のみを平均化し、低減することが可能である。これにより、より高感度での検査が可能になる。 According to the first embodiment, an image of the same location including a defect is acquired a plurality of times, and inspection is performed using the averaged image. Therefore, the defect signal is always generated randomly without reducing the defect signal generated at the same position. Only noise signals can be averaged and reduced. Thereby, inspection with higher sensitivity is possible.
［第２実施形態］
上述したように、検査画像上の撮像素子のショットノイズ、光源の揺らぎ等によるノイズ信号の発生位置はランダムである。それに対して、欠陥信号は常に一定の場所で発生する。従って、ウエハーの同一箇所の画像を複数枚取得し、取得した複数の画像各々を用いて複数の検査を行った場合、欠陥信号は常に同一の場所で検出されるが、ノイズ信号はランダムな場所で検出される。そこで、第２実施形態では、制御部４が、ステップＳ３で、複数の検査結果を比較し、スキャン回数中の検出率に基づいて欠陥信号とノイズ信号を識別することにより、欠陥をより高感度で検出することを可能とする。すなわち、第２実施形態では、制御部４が、ステップＳ３で、領域Ａを撮像した１つの第１画像と、領域Ｂを撮像した１つの第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における撮像１回分の欠陥の有無の判定結果を得て、撮像複数回で欠陥となった撮像数を求め、さらに、この求めた撮像数を撮像複数回の回数で除算した結果（複数回における欠陥検出率）に応じて、当該領域における欠陥の有無を判定する。なお、制御部４では、検出率に閾値を設定し、１００％検出される信号だけでなく、ある一定以上の検出率で検出された信号を欠陥信号とし、平均検査結果として出力することを可能としてもよい。また、複数の検査結果は、スキャン毎に複数回スキャンする場合と、ウエハー全面検査を複数回実施する場合とが考えられる。
[Second Embodiment]
As described above, the noise signal generation position due to shot noise of the image sensor, fluctuation of the light source, etc. on the inspection image is random. On the other hand, the defect signal is always generated at a certain place. Therefore, when a plurality of images of the same location on the wafer are acquired and a plurality of inspections are performed using each of the acquired images, the defect signal is always detected at the same location, but the noise signal is a random location. Is detected. Therefore, in the second embodiment, the control unit 4 compares a plurality of inspection results in step S3 and identifies the defect signal and the noise signal based on the detection rate during the number of scans, thereby making the defect more sensitive. It is possible to detect with. That is, in the second embodiment, the control unit 4 sets pixel values corresponding to each other between one first image obtained by imaging the region A and one second image obtained by imaging the region B in step S3. By obtaining the difference, the determination result of the presence or absence of a defect for one imaging in the region is obtained, the number of imaging that has become defective in a plurality of imaging is obtained, and the obtained imaging number is calculated by the number of times of imaging. The presence / absence of a defect in the area is determined according to the result of division (defect detection rate at a plurality of times). The control unit 4 can set a threshold value for the detection rate, and can output not only a signal detected at 100% but also a signal detected at a certain detection rate above a certain level as a defect signal and output it as an average inspection result. It is good. In addition, a plurality of inspection results may be scanned a plurality of times for each scan and a case where a wafer whole surface inspection is performed a plurality of times.
図９を参照して、第２実施形態の制御部４によるステップＳ３の処理例について説明する。図９は、４回の撮像画像に基づく３チップ比較方式による欠陥検出を行った結果を検査結果３００として模式的に示している。各検査結果３００は、ウエハー５０の複数のチップ６０のうち所定の２チップ６０間（例えば隣接する２チップ６０間）で対応する画素値を比較し、画素値間の差の値が所定の閾値を超えた場合を黒又は白の丸印で示している。そして、４回の検査結果３００のすべてで所定の閾値以上であると判定された信号を黒丸印（高検出率信号）で、４回のいずれかで所定の閾値以上ではなかった場合があった（図９では閾値以上と各１回判定された）信号を白の丸印（低検出率信号）で示している。この場合、４回のうち４回とも検出された信号を高検出率信号としている。４回の検査結果３００から高検出率信号のみを抽出した検査結果を、平均検査結果３１０として示した。図９に示した平均検査結果３１０は、ウエハー５０に対応するウエハー５１と、チップ６０に対応するチップ６１とを含んでいる。 With reference to FIG. 9, the process example of step S3 by the control part 4 of 2nd Embodiment is demonstrated. FIG. 9 schematically shows the result of defect detection by a three-chip comparison method based on four captured images as an inspection result 300. Each inspection result 300 compares corresponding pixel values between predetermined two chips 60 (for example, between adjacent two chips 60) among the plurality of chips 60 of the wafer 50, and the difference value between the pixel values is a predetermined threshold value. The case where the value is exceeded is indicated by a black or white circle. In all of the four inspection results 300, the signal determined to be equal to or higher than the predetermined threshold value may be a black circle (high detection rate signal) and may not be equal to or higher than the predetermined threshold value in any of the four times. The signals (determined once each as being above the threshold in FIG. 9) are indicated by white circles (low detection rate signals). In this case, the signal detected four times out of the four times is set as a high detection rate signal. An inspection result obtained by extracting only the high detection rate signal from the four inspection results 300 is shown as an average inspection result 310. The average inspection result 310 shown in FIG. 9 includes a wafer 51 corresponding to the wafer 50 and a chip 61 corresponding to the chip 60.
なお、非常にノイズの多い検査領域の検査を行った場合や検査装置の異常が発生した場合等、欠陥信号ではなくノイズ信号であるにも関わらず、複数の検査のうち毎回ほぼ同じ座標で、大きな信号値で検出される場合がある。このようなノイズ信号を除去するために、検出回数だけでなく欠陥のパラメータ（Ｐａｒａｍｅｔｅｒ）を用いて、ノイズ信号を除去する方法が考えられる。例えば、各回の欠陥検査で検出された信号の形状や明暗等の特徴量、周辺の画像の明暗や分散等の特徴量を抽出し、各信号のパラメータ値として情報を保持しておく。このパラメータに閾値を設定することでノイズ信号を除去することが可能になる。一例として、複数回検査を行うと毎回検出されるが、信号の明暗・形状が毎回異なる場合は、欠陥ではなくノイズ信号とみなせる。また他の例として、検出された信号の周辺の分散が非常に大きい場合、その座標周辺でノイズ信号が検出されやすくなるため、ノイズ信号である可能性が高い。 In addition, when performing inspection of a very noisy inspection area or when an abnormality occurs in the inspection apparatus, even though it is a noise signal instead of a defect signal, it is almost the same coordinate each time among a plurality of inspections, It may be detected with a large signal value. In order to remove such a noise signal, a method of removing the noise signal using not only the number of detections but also a defect parameter (Parameter) is conceivable. For example, a feature amount such as the shape and brightness of a signal detected in each defect inspection and a feature amount such as brightness and darkness of a surrounding image are extracted, and information is held as a parameter value of each signal. A noise signal can be removed by setting a threshold value for this parameter. As an example, when inspection is performed a plurality of times, it is detected every time. However, if the signal is different in brightness and shape each time, it can be regarded as a noise signal rather than a defect. As another example, if the variance around the detected signal is very large, a noise signal is likely to be detected around the coordinates, and thus there is a high possibility that the detected signal is a noise signal.
また、複数の検査結果を比較する際においては、ステージ３の精度により必ず欠陥が検出される座標にはズレが生じるため、取得した複数の検査結果に対し、アライメント処理を行った上で、検査結果比較を行う。第２実施形態において制御部４は、例えば図１０に示したように基準となる検査結果３００−１において検出された信号の中からアライメント用の信号を複数個選出する。複数の検査結果６０ａ−１〜６０ａ−３及び６０ｂ−１〜６０ｂ−３それぞれについてアライメント用欠陥の座標に対して、あらかじめ決められた検索範囲内にある同等の信号値を持つ信号の座標との差分を計算する。複数個のアライメント用信号座標の差分から検査結果全体のｘ方向、ｙ方向、回転方向のズレを算出する。このズレ量を考慮し、複数の検査結果全体を比較し、同一座標にある信号を同一欠陥とし、平均検査結果を導出する。 In addition, when comparing a plurality of inspection results, the coordinates at which defects are necessarily detected due to the accuracy of the stage 3 are displaced. Therefore, after performing an alignment process on the acquired plurality of inspection results, Compare results. In the second embodiment, the control unit 4 selects a plurality of alignment signals from the signals detected in the reference inspection result 300-1 as shown in FIG. 10, for example. For each of the plurality of inspection results 60a-1 to 60a-3 and 60b-1 to 60b-3, the coordinates of the signal having the same signal value within the predetermined search range with respect to the coordinates of the alignment defect. Calculate the difference. Deviations in the x direction, y direction, and rotation direction of the entire inspection result are calculated from the difference between the plurality of alignment signal coordinates. Considering this amount of deviation, the entire plurality of inspection results are compared, signals at the same coordinates are regarded as the same defect, and an average inspection result is derived.
なお、図１０では、図９に示した１回目の検査結果３００を、検査結果１（３００−１）として示し、基準となるアライメント信号１を選出したチップをチップ６０ａ−１、アライメント信号２を選出したチップをチップ６０ｂ−１として示している。また、２回目、３回目の撮像画像に基づく対応するチップの検査結果をチップ６０ａ−２及び６０ａ−３ならびに６０ｂ−２及び６０ｂ−３として模式的に示している。また、各検査結果における信号位置を黒丸で示し、検査結果１（３００−１）の検査結果において基準となる信号位置を他の検査結果において破線の丸印で示している。また、ズレ量を矢印で示している。 In FIG. 10, the first test result 300 shown in FIG. 9 is shown as test result 1 (300-1), and the chip from which the reference alignment signal 1 is selected is the chip 60a-1 and the alignment signal 2 is selected. The selected chip is shown as a chip 60b-1. Also, the inspection results of the corresponding chips based on the second and third captured images are schematically shown as chips 60a-2 and 60a-3, and 60b-2 and 60b-3. The signal position in each inspection result is indicated by a black circle, and the reference signal position in the inspection result of inspection result 1 (300-1) is indicated by a broken-line circle in other inspection results. Further, the amount of deviation is indicated by an arrow.
アライメント用信号には、サイズ（Ｓｉｚｅ）が小さく、信号値の大きい信号が適している。制御部４は、例えば、検出した信号をサイズと信号値にて重み付けを行い、サイズが小さく信号値の大きい信号をアライメント用信号として選出する。また、アライメント用信号は、検査領域中の座標に偏りがない様に選出することが望ましい。ここで、検出した信号のサイズは、当該画素の周辺画素の互いに対応する画素値の差の値を参照することで算出することができる。したがって、第２実施形態の制御部４は、撮像複数回分の撮像１回分の判定結果に応じて当該領域における欠陥の有無を判定する際に、互いに対応する画素値の差の値（すなわち信号値）と、当該画素の周辺画素の互いに対応する画素値の差（すなわちサイズを求める際に用いられる値）とに応じて、位置合わせの基準となる画素を設定し、複数の撮像間で画素毎に位置合わせを行うものとすることができる。 A signal having a small size (Size) and a large signal value is suitable for the alignment signal. For example, the control unit 4 weights the detected signal with a size and a signal value, and selects a signal with a small size and a large signal value as an alignment signal. Further, it is desirable to select the alignment signal so that the coordinates in the inspection area are not biased. Here, the size of the detected signal can be calculated by referring to the difference value of the pixel values corresponding to each other in the peripheral pixels of the pixel. Therefore, when the controller 4 of the second embodiment determines the presence / absence of a defect in the area according to the determination result for one imaging for a plurality of imaging times, the difference value between the corresponding pixel values (that is, the signal value) ) And a difference between corresponding pixel values of peripheral pixels of the pixel (that is, a value used when obtaining the size), a pixel serving as a reference for alignment is set, and each pixel between a plurality of imaging is set. Can be aligned.
なお、本発明の実施の形態は、上記のものに限定されず、例えば、上記の実施形態は検査方法あるいは検査装置としてとらえるだけでなく、半導体製造工程の一部とすることで半導体製造方法を構成するものとしてとらえることができる。あるいは、本発明の実施の形態は、ウエハーの外観検査に限定されず、例えばマスクやレチクルの検査に応用することもできる。 The embodiment of the present invention is not limited to the above-described embodiment. For example, the embodiment described above is not only regarded as an inspection method or an inspection apparatus, but also a semiconductor manufacturing method by being a part of a semiconductor manufacturing process. It can be considered as a component. Alternatively, the embodiment of the present invention is not limited to wafer appearance inspection, and can be applied to inspection of masks and reticles, for example.
１…半導体検査装置、２…撮像部、３…ステージ、４…制御部、５…ウエハー、６…チップ DESCRIPTION OF SYMBOLS 1 ... Semiconductor inspection apparatus, 2 ... Imaging part, 3 ... Stage, 4 ... Control part, 5 ... Wafer, 6 ... Chip
Claims (7)
前記第１領域を撮像した複数の第１画像と、前記第２領域を撮像した複数の第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における欠陥の有無を判定する半導体検査方法であって、
前記互いに対応する画素値の差が、
前記第１領域を撮像した複数の第１画像の各画素値を、前記複数の第１画像間で互いに対応する画素毎に平均した値と、
前記第２領域を撮像した複数の第２画像の各画素値を、前記複数の第２画像間で互いに対応する画素毎に平均した値との差である
ことを特徴とする半導体検査方法。 The first and second regions having the same pattern are imaged a plurality of times on the wafer while moving the stage on which the wafer is mounted in a predetermined direction,
By obtaining a difference in pixel values corresponding to each other between a plurality of first images obtained by imaging the first region and a plurality of second images obtained by imaging the second region, the presence or absence of defects in the region is determined. a semiconductor testing how to determine,
The difference between the corresponding pixel values is
A value obtained by averaging each pixel value of a plurality of first images obtained by imaging the first region for each pixel corresponding to each other between the plurality of first images;
A semiconductor inspection method, characterized in that each pixel value of a plurality of second images obtained by imaging the second region is a difference from a value obtained by averaging each pixel corresponding to each other between the plurality of second images .
ことを特徴とする請求項１に記載の半導体検査方法。 The semiconductor inspection method according to claim 1, wherein when the difference between the corresponding pixel values is obtained, alignment is performed for each pixel between the plurality of times of imaging.
ことを特徴とする請求項１又は２に記載の半導体検査方法。 The semiconductor inspection method according to claim 1, wherein the number of times of imaging is set according to a statistic of a difference between the pixel values corresponding to each other.
前記第１領域を撮像した１の前記第１画像と、前記第２領域を撮像した１の前記第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における前記撮像１回分の欠陥の有無の判定結果を得て、
前記複数回における欠陥検出率に応じて、前記当該領域における欠陥の有無を判定する
ことを特徴とする請求項１から３のいずれか１項に記載の半導体検査方法。 When determining the presence or absence of defects in the region,
By obtaining a difference in pixel values corresponding to each other between one first image obtained by imaging the first region and one second image obtained by imaging the second region, the imaging in the region is obtained. Obtain the determination result of the presence or absence of one defect,
The semiconductor inspection method according to claim 1, wherein presence / absence of a defect in the region is determined according to the defect detection rate in the plurality of times.
前記互いに対応する画素値の差の値と、当該画素の周辺画素の前記互いに対応する画素値の差とに応じて、位置合わせの基準となる画素を設定し、
前記複数の撮像間で画素毎に位置合わせを行う
ことを特徴とする請求項４に記載の半導体検査方法。 When determining the presence / absence of a defect in the region, according to the determination result for the imaging multiple times for the imaging multiple times,
According to the difference value between the pixel values corresponding to each other and the difference between the pixel values corresponding to the neighboring pixels of the pixel, a pixel serving as a reference for alignment is set.
The semiconductor inspection method according to claim 4, wherein alignment is performed for each pixel between the plurality of imaging.
前記第１領域を撮像した複数の第１画像と、前記第２領域を撮像した複数の第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における欠陥の有無を判定する半導体検査装置であって、
前記互いに対応する画素値の差が、
前記第１領域を撮像した複数の第１画像の各画素値を、前記複数の第１画像間で互いに対応する画素毎に平均した値と、
前記第２領域を撮像した複数の第２画像の各画素値を、前記複数の第２画像間で互いに対応する画素毎に平均した値との差である
ことを特徴とする半導体検査装置。 The first and second regions having the same pattern are imaged a plurality of times on the wafer while moving the stage on which the wafer is mounted in a predetermined direction,
By obtaining a difference in pixel values corresponding to each other between a plurality of first images obtained by imaging the first region and a plurality of second images obtained by imaging the second region, the presence or absence of defects in the region is determined. a semiconductor inspection device you determination,
The difference between the corresponding pixel values is
A value obtained by averaging each pixel value of a plurality of first images obtained by imaging the first region for each pixel corresponding to each other between the plurality of first images;
A semiconductor inspection apparatus characterized in that each pixel value of a plurality of second images obtained by imaging the second region is a difference from a value obtained by averaging each pixel value corresponding to each other between the plurality of second images .
前記第１領域を撮像した複数の第１画像と、前記第２領域を撮像した複数の第２画像との間で、互いに対応する画素値の差を求めることで、当該領域における欠陥の有無を判定する検査工程を含む半導体製造方法であって、
前記互いに対応する画素値の差が、
前記第１領域を撮像した複数の第１画像の各画素値を、前記複数の第１画像間で互いに対応する画素毎に平均した値と、
前記第２領域を撮像した複数の第２画像の各画素値を、前記複数の第２画像間で互いに対応する画素毎に平均した値との差である
ことを特徴とする半導体製造方法。 The first and second regions having the same pattern are imaged a plurality of times on the wafer while moving the stage on which the wafer is mounted in a predetermined direction,
By obtaining a difference in pixel values corresponding to each other between a plurality of first images obtained by imaging the first region and a plurality of second images obtained by imaging the second region, the presence or absence of defects in the region is determined. determining inspection process a including a semiconductor manufacturing process,
The difference between the corresponding pixel values is
A value obtained by averaging each pixel value of a plurality of first images obtained by imaging the first region for each pixel corresponding to each other between the plurality of first images;
A semiconductor manufacturing method characterized in that each pixel value of a plurality of second images obtained by imaging the second region is a difference from a value obtained by averaging each pixel corresponding to each other between the plurality of second images .
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