JP6287204B2 - Semiconductor light source device - Google Patents
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Description
本発明は、発光ダイオード（Light Emitting Diode, LED）を用いた半導体光源装置に関する。特に、演色性に優れた照明光が得られる半導体光源装置に関する。 The present invention relates to a semiconductor light source device using a light emitting diode (LED). In particular, the present invention relates to a semiconductor light source device capable of obtaining illumination light having excellent color rendering properties.
発光ダイオード（以下「ＬＥＤ」と略称する。）は、高い発光効率、低い消費電力および長寿命であるという観点から、照明用装置をはじめ、光通信装置、プリンタやスキャナなどの様々な応用製品の光源として採用されている。
現在主流とされる白色ＬＥＤは、青色ＬＥＤと、その青色光を変換する黄色蛍光体との組み合わせに基づいて、単一のＬＥＤ素子（シングルチップ）のみによる白色光が実現されている。また、蛍光体の波長変換帯域を広くしまたは任意に選択し、あるいは蛍光体を塗布しないＬＥＤ素子を加えることで、演色性に優れた良質の照明光を得ることが可能である。
Light emitting diodes (hereinafter abbreviated as “LEDs”) are used in various application products such as lighting devices, optical communication devices, printers and scanners from the viewpoint of high luminous efficiency, low power consumption and long life. It is adopted as a light source.
White LEDs, which are currently mainstream, realize white light only by a single LED element (single chip) based on a combination of a blue LED and a yellow phosphor that converts the blue light. Moreover, it is possible to obtain high-quality illumination light with excellent color rendering properties by widening or arbitrarily selecting the wavelength conversion band of the phosphor or adding an LED element to which the phosphor is not applied.
ここで、演色性とは、物体を照明で照らしたときにその物体がどのような見え方をするか、という色の見え方に及ぼす光源の性質をいう。優れた演色性は、たとえば太陽光などの白色光のホワイトバランス（波長プロファイル）に光源の光を近づけることによって得られる。また、演色性に優れるとは、合成した光が白色光に限らず所望のまたは任意の色温度を有するように調整可能であること（たとえば蝋燭の炎や白熱灯などの光をＬＥＤ光により再現できること）や、光源に色むらなどの品質劣化がないことなども含まれる。 Here, the color rendering property refers to the property of the light source that affects the appearance of the color, such as how the object will look when illuminated by illumination. Excellent color rendering is obtained by bringing the light of the light source close to the white balance (wavelength profile) of white light such as sunlight. In addition, excellent color rendering is that the synthesized light is not limited to white light but can be adjusted to have a desired or arbitrary color temperature (for example, light from a candle flame or an incandescent lamp is reproduced by LED light) That the light source has no quality deterioration such as color unevenness.
ところで、ＬＥＤ光源の色温度や上述したホワイトバランスなどを調整するため、蛍光体が塗布されるＬＥＤ素子と蛍光体が塗布されないＬＥＤ素子とが隣接して配置される半導体光源装置が知られている。しかし、蛍光体がその流動性により塗布すべきでないＬＥＤ素子に付着すると、光源のホワイトバランスが崩れ所望の演色性が得られなくなる。このような問題を解決するため、たとえば特許文献１には、蛍光体材料が塗布される第１ＬＥＤチップと、蛍光体材料が塗布されない第２ＬＥＤチップとを基板上に備え、第２ＬＥＤチップのほうが第１ＬＥＤチップよりも高い位置にあるように配置される半導体発光装置が開示されている。２種類のＬＥＤチップに高低差を設けたことにより、嵩上げされた第２ＬＥＤチップに蛍光体材料が付着することを防止している。 By the way, in order to adjust the color temperature of the LED light source, the above-described white balance, etc., there is known a semiconductor light source device in which an LED element coated with a phosphor and an LED element not coated with a phosphor are arranged adjacent to each other. . However, if the phosphor adheres to the LED element that should not be applied due to its fluidity, the white balance of the light source is lost and the desired color rendering properties cannot be obtained. In order to solve such a problem, for example, in Patent Document 1, a first LED chip to which a phosphor material is applied and a second LED chip to which a phosphor material is not applied are provided on a substrate, and the second LED chip is the first one. A semiconductor light emitting device is disclosed which is arranged to be higher than one LED chip. By providing a height difference between the two types of LED chips, the phosphor material is prevented from adhering to the raised second LED chip.
たとえば特許文献１に開示される従来の半導体発光装置によれば、予め基板に嵩上げ部を設け、その嵩上げ部の上に第２ＬＥＤチップを実装することにより高低差を形成している。このような従来の嵩上げ部は、たとえば熱伝導性の高いアルミニウム等の金属から形成される。 For example, according to a conventional semiconductor light emitting device disclosed in Patent Document 1, a height difference is formed by providing a raised portion on a substrate in advance and mounting a second LED chip on the raised portion. Such a conventional raised portion is formed of a metal such as aluminum having high thermal conductivity, for example.
しかし、嵩上げ部をアルミニウム等の導電性金属で形成した場合、基板と第２ＬＥＤチップとを電気的に絶縁するための絶縁層が必要となる。また、第２ＬＥＤチップごとに、それぞれの嵩上げ部を基板に貼り付ける工程が必要となり、半導体発光装置の製造工程が複雑化してコスト高を招くことにもなる。 However, when the raised portion is formed of a conductive metal such as aluminum, an insulating layer for electrically insulating the substrate and the second LED chip is required. In addition, for each second LED chip, a process of attaching each raised portion to the substrate is required, which complicates the manufacturing process of the semiconductor light emitting device and increases costs.
本発明は、かかる従来の課題にかんがみてなされたものであり、演色性に優れ、また製造工程が少なく量産化にも適した半導体光源装置を提供することを目的とする。 The present invention has been made in view of such conventional problems, and an object of the present invention is to provide a semiconductor light source device that is excellent in color rendering and has few manufacturing processes and is suitable for mass production.
本発明は、装置基板上に実装される第１のＬＥＤ素子及び第２のＬＥＤ素子を備える半導体光源装置であって、前記第１のＬＥＤ素子が成長基板を含み、当該成長基板を介して前記装置基板に実装されることにより、前記第１のＬＥＤ素子の発光層が前記第２のＬＥＤ素子の上面よりも前記装置基板に対し高い位置にあり、前記第２のＬＥＤ素子が波長変換部材により被覆されている半導体光源装置である。 The present invention is a semiconductor light source device including a first LED element and a second LED element mounted on an apparatus substrate, wherein the first LED element includes a growth substrate, and the first LED element is interposed through the growth substrate. By being mounted on the device substrate, the light emitting layer of the first LED element is positioned higher than the upper surface of the second LED element with respect to the device substrate, and the second LED element is formed by the wavelength conversion member. The semiconductor light source device is covered.
本発明の半導体光源装置によれば、第１のＬＥＤ素子の発光層が第２のＬＥＤ素子の上面よりも装置基板に対し高い位置にあるので、第２のＬＥＤ素子のみが波長変換部材に被覆される。これにより、発光層の位置が高い第１のＬＥＤ素子に不必要な波長変換部材の付着を防止し、優れた演色性を有する光源を得ることができる。また、第１のＬＥＤ素子が成長基板を介して装置基板に実装されるので、製造工程が少なく量産化にも適した半導体光源装置を提供することができる。 According to the semiconductor light source device of the present invention, since the light emitting layer of the first LED element is located higher than the upper surface of the second LED element with respect to the device substrate, only the second LED element covers the wavelength conversion member. Is done. Thereby, the adhesion of the wavelength conversion member unnecessary for the first LED element having a high light emitting layer position can be prevented, and a light source having excellent color rendering properties can be obtained. In addition, since the first LED element is mounted on the device substrate via the growth substrate, it is possible to provide a semiconductor light source device that has fewer manufacturing steps and is suitable for mass production.
以下、図面を参照しながら、本発明の好適な実施形態を説明する。なお、参照される各図を通し、同一の各構成要素および形態は異なるが対応関係がある各構成要素に対しては同一の符号が付されている。 Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Throughout each of the drawings to be referred to, the same reference numerals are given to the same constituent elements and forms which are different but have a corresponding relationship.
本発明の一実施形態による半導体光源装置１０は、装置基板１３に実装される第１のＬＥＤ素子１１および第２のＬＥＤ素子１２を備える。図１は、一つの実施形態による第１のＬＥＤ素子１１の断面構造を模式的に示す図である。第１のＬＥＤ素子１１および第２のＬＥＤ素子１２は、ＬＥＤ素子で構成することができる。 A semiconductor light source device 10 according to an embodiment of the present invention includes a first LED element 11 and a second LED element 12 mounted on a device substrate 13. FIG. 1 is a diagram schematically showing a cross-sectional structure of a first LED element 11 according to one embodiment. The 1st LED element 11 and the 2nd LED element 12 can be comprised with an LED element.
（第１のＬＥＤ素子）
第１のＬＥＤ素子１１は、たとえば、６００ｎｍ付近に波長のピークを有する赤色ＬＥＤからなる。また、第１のＬＥＤ素子１１は、波長範囲５９０ｎｍ（橙）〜７５０ｎｍ（赤）から選択される波長を有する暖色系のＬＥＤであってもよい。また、半導体光源装置１０の使用目的や要求される光源の特性等に応じて、緑色ないし青色ＬＥＤを第１のＬＥＤ素子１１に適用してもよい。
(First LED element)
The first LED element 11 is made of, for example, a red LED having a wavelength peak near 600 nm. Further, the first LED element 11 may be a warm color LED having a wavelength selected from a wavelength range of 590 nm (orange) to 750 nm (red). Further, a green or blue LED may be applied to the first LED element 11 according to the purpose of use of the semiconductor light source device 10 or the required characteristics of the light source.
第１のＬＥＤ素子１１は、平面視において、たとえば０．５ｍｍ〜２ｍｍ角の四角形のチップサイズを有している。第１のＬＥＤ素子１１は、図１に示されるように、成長基板１１１と、成長基板１１１上にエピタキシャル成長された半導体層１１２とを備えた垂直構造を有している。成長基板１１１はたとえばIII−Ｖ族のｎ型半導体単結晶である半導体基板からなる。この成長基板１１１としては、たとえばＳｉ（VI）をドナーとして添加したＧａＡｓ基板を用いることができる。また、第１のＬＥＤ素子１１が、窒化物系化合物半導体であるたとえばＧａＮ系の青色ＬＥＤまたは緑色ＬＥＤの場合には、成長基板１１１としてＳｉＣ、ＧａＮ、ＡｌＮ等の導電性基板が好適に用いられる。成長基板１１１の厚さは、８５μｍ〜２００μｍとすることができ、好ましくは１２０μｍ〜１５０μｍである。 The first LED element 11 has, for example, a square chip size of 0.5 mm to 2 mm square in plan view. As shown in FIG. 1, the first LED element 11 has a vertical structure including a growth substrate 111 and a semiconductor layer 112 epitaxially grown on the growth substrate 111. The growth substrate 111 is made of a semiconductor substrate which is, for example, a group III-V n-type semiconductor single crystal. As the growth substrate 111, for example, a GaAs substrate to which Si (VI) is added as a donor can be used. Further, when the first LED element 11 is a nitride compound semiconductor such as a GaN blue LED or a green LED, a conductive substrate such as SiC, GaN, AlN or the like is preferably used as the growth substrate 111. . The thickness of the growth substrate 111 can be 85 μm to 200 μm, and preferably 120 μm to 150 μm.
第１のＬＥＤ素子１１の半導体層１１２は、ｎ型半導体層１１３、活性層１１４、ｐ型半導体層１１５およびｐ型拡散層１１８が順に積層された構造を有している。なお、ｎ型半導体層１１３、ｐ型半導体層１１５は、単層、多層を特に限定しない。半導体層１１２は、たとえば有機金属化学気相成長（Metal Organic Chemical Vapor Deposition, MOCVD）法によって成長基板１１１上に順次積層することができる。またその他の気相または液相成長法を用いて半導体層１１２を形成してもよい。具体的に半導体層１１２は、それぞれの層がたとえばＡｌＧａＩｎＰ系の化合物半導体からなる。すなわち、ｎ型半導体層１１３（ｎ型クラッド層）としては、ドナーである６価のＳｉをドーピングしたＡｌＧａＩｎＰまたはＡｌＩｎＰを用いることができ、ｐ型半導体層１１５（ｐ型クラッド層）としては、アクセプタである２価のＺｎをドーピングしたＡｌＧａＩｎＰまたはＡｌＩｎＰを用いることができる。また、ｎ型半導体層１１３とｐ型半導体層１１５とによって挟まれる活性層１１４としてはＡｌＧａＩｎＰを用いることができる。なお、第１のＬＥＤ素子１１は、上述のＡｌＧａＩｎＰ系の化合物半導体以外にも、たとえばＧａＡｓＰ系や、ＡｌＧａＡｓ系や、ＧａＮ系や、ＩｎＧａＮ系の化合物半導体を用いることもできる。 The semiconductor layer 112 of the first LED element 11 has a structure in which an n-type semiconductor layer 113, an active layer 114, a p-type semiconductor layer 115, and a p-type diffusion layer 118 are stacked in this order. Note that the n-type semiconductor layer 113 and the p-type semiconductor layer 115 are not particularly limited to a single layer and a multilayer. The semiconductor layer 112 can be sequentially stacked on the growth substrate 111 by, for example, a metal organic chemical vapor deposition (MOCVD) method. Alternatively, the semiconductor layer 112 may be formed using other vapor phase or liquid phase growth methods. Specifically, each of the semiconductor layers 112 is made of, for example, an AlGaInP-based compound semiconductor. That is, as the n-type semiconductor layer 113 (n-type cladding layer), AlGaInP or AlInP doped with hexavalent Si as a donor can be used, and as the p-type semiconductor layer 115 (p-type cladding layer), an acceptor is used. It is possible to use AlGaInP or AlInP doped with divalent Zn. Further, AlGaInP can be used as the active layer 114 sandwiched between the n-type semiconductor layer 113 and the p-type semiconductor layer 115. The first LED element 11 may be made of, for example, a GaAsP-based, AlGaAs-based, GaN-based, or InGaN-based compound semiconductor in addition to the above-described AlGaInP-based compound semiconductor.
高輝度のＬＥＤを実現するために、図１に示されるように半導体層１１２と成長基板１１１との間に光反射層１１６を設け、これにより光取り出し効率を高めてもよい。光反射層１１６は、たとえば、ｎ型半導体の一部として形成したＤＢＲ（Distributed Bragg Reflector）を用いることができる。ＤＢＲは、空間周期がλ／２ｎの回折格子である（ここで、λは真空における光の波長、ｎは媒体（具体的にはｎ型半導体層）における屈折率である。）。すなわち、光反射層１１６は、半導体層１１２から基板側へ放出された波長λの光を、反対側の上面である光取り出し面１１ａ側に回折させる一方で、ｐ電極１１７からの順方向の電流をｎ電極１１９へ導通させることができる。なお、第１のＬＥＤ素子１１の光取り出し面１１ａとは、図１に示されるように、半導体層１１２に積層され透光性を有するｐ型拡散層１１８の上面のことである。 In order to realize a high-brightness LED, a light reflecting layer 116 may be provided between the semiconductor layer 112 and the growth substrate 111 as shown in FIG. 1, thereby improving the light extraction efficiency. As the light reflecting layer 116, for example, a DBR (Distributed Bragg Reflector) formed as a part of an n-type semiconductor can be used. DBR is a diffraction grating having a spatial period of λ / 2n (where λ is the wavelength of light in vacuum and n is the refractive index in the medium (specifically, the n-type semiconductor layer)). That is, the light reflection layer 116 diffracts the light having the wavelength λ emitted from the semiconductor layer 112 to the substrate side to the light extraction surface 11a side, which is the upper surface on the opposite side, and forward current from the p electrode 117. Can be conducted to the n-electrode 119. The light extraction surface 11a of the first LED element 11 is the upper surface of a p-type diffusion layer 118 that is laminated on the semiconductor layer 112 and has a light transmitting property, as shown in FIG.
第１のＬＥＤ素子１１において、ＬＥＤのアノードと電気的に接続されるｐ電極１１７は、前述のｐ型拡散層１１８上に設けられる。一方、カソードと電気的に接続されるｎ電極１１９は、成長基板１１１（ｎ型半導体基板）の底面に設けられる。これらｐ電極１１７およびｎ電極１１９は、たとえば真空蒸着またはスパッタリングにより導電性材料を成膜後、フォトリソグラフィ等の技術によりボンディングに適した所定のパターンにエッチングして形成される。 In the first LED element 11, the p-electrode 117 that is electrically connected to the anode of the LED is provided on the aforementioned p-type diffusion layer 118. On the other hand, the n-electrode 119 electrically connected to the cathode is provided on the bottom surface of the growth substrate 111 (n-type semiconductor substrate). The p electrode 117 and the n electrode 119 are formed by forming a conductive material, for example, by vacuum evaporation or sputtering, and then etching into a predetermined pattern suitable for bonding by a technique such as photolithography.
第１のＬＥＤ素子１１では、半導体層１１２に順方向の電流が供給されることにより活性層１１４にキャリアが移動して閉じ込められ、そこでキャリアの再結合が効率良く起こり光が放出される。このため、活性層１１４は発光層ともいわれる。なお、図１に示される第１のＬＥＤ素子１１は、半導体層が積層する方向と同じ方向に光が取り出されるので、装置基板１３に対してはフェース・アップ（ＦＵ）実装されることとなる。 In the first LED element 11, carriers are moved and confined in the active layer 114 by supplying a forward current to the semiconductor layer 112, where recombination of carriers occurs efficiently and light is emitted. For this reason, the active layer 114 is also referred to as a light emitting layer. In addition, since the first LED element 11 shown in FIG. 1 extracts light in the same direction as the direction in which the semiconductor layers are laminated, it is mounted face-up (FU) on the device substrate 13. .
また、図１には垂直構造のＬＥＤ素子が記載されているが、第１のＬＥＤ素子１１がたとえば図２に示される水平構造のＬＥＤ素子であってもよい。図２に示される構造のＬＥＤ素子も装置基板１３に対しＦＵ実装、つまり、ｐ電極１１７およびｎ電極１１９の形成された面を上側にし、成長基板１１１側がｎ電極１１９を介して装置基板１３に実装される。
なお、窒化物半導体における成長基板１１１としては、Ｃ面、Ｒ面、及びＡ面のいずれかを主面とするサファイアやスピネル（ＭｇＡｌ2Ｏ4）のような絶縁性基板を用いることができる。
1 shows a vertical LED element, the first LED element 11 may be, for example, a horizontal LED element shown in FIG. The LED element having the structure shown in FIG. 2 is also FU mounted on the device substrate 13, that is, the surface on which the p electrode 117 and the n electrode 119 are formed is on the upper side, and the growth substrate 111 side is attached to the device substrate 13 through the n electrode 119. Implemented.
As the growth substrate 111 in the nitride semiconductor, an insulating substrate such as sapphire or spinel (MgAl 2 O 4 ) whose main surface is any one of the C-plane, R-plane, and A-plane can be used.
（第２のＬＥＤ素子）
次に、図３は、本発明の一実施形態による第２のＬＥＤ素子１２の断面構造を模式的に示す図である。第２のＬＥＤ素子１２は、たとえば、ピーク波長が４５０ｎｍ前後の青色ＬＥＤ、またはピーク波長が５００ｎｍ前後またはそれ以上である緑色ＬＥＤからなる。また、半導体光源装置１０の使用目的や要求される光源の特性等に応じて、第２のＬＥＤ素子１２に赤色ないしは黄色の暖色系のＬＥＤを適用してもよい。第２のＬＥＤ素子１２は、平面視において、たとえば１ｍｍ〜２ｍｍ角の四角形のチップサイズを有している。
(Second LED element)
Next, FIG. 3 is a diagram schematically showing a cross-sectional structure of the second LED element 12 according to an embodiment of the present invention. The second LED element 12 is, for example, a blue LED having a peak wavelength of about 450 nm or a green LED having a peak wavelength of about 500 nm or more. Further, a red or yellow warm color LED may be applied to the second LED element 12 in accordance with the purpose of use of the semiconductor light source device 10 or the required light source characteristics. The second LED element 12 has, for example, a square chip size of 1 mm to 2 mm square in plan view.
第２のＬＥＤ素子１２のチップサイズは、上述した第１のＬＥＤ素子１１のチップサイズと同一でもよく、異なっていてもよい。また、第１および第２のＬＥＤ素子１１、１２のそれぞれの輝度特性が同一でもよく、異なっていてもよい。さらには、これら第１および第２のＬＥＤ素子１１、１２の輝度または発光強度が、半導体光源装置１０の外部または内部に設けた図示しない電流制御装置等により相対的に調整されるものでもよい。 The chip size of the second LED element 12 may be the same as or different from the chip size of the first LED element 11 described above. Further, the luminance characteristics of the first and second LED elements 11 and 12 may be the same or different. Further, the luminance or light emission intensity of the first and second LED elements 11 and 12 may be relatively adjusted by a current control device (not shown) provided outside or inside the semiconductor light source device 10.
第２のＬＥＤ素子１２は、窒化物系化合物半導体であるたとえばＧａＮ系の半導体により形成した半導体層１２２を備える。半導体層１２２の各層を構成する半導体は、図示しない成長基板上に、たとえばＭＯＣＶＤ法その他の気相成長法によりエピタキシャル成長される。この成長基板は、半導体層１２２を形成後に、たとえばレーザリフトオフ（ＬＬＯ）法により除去される。成長基板の除去は、好ましくはｐ電極１２７及びｎ電極１２９の形成後、さらに装置基板１３に実装された後に行うことが好ましい。成長基板除去後のＬＥＤ素子は極めて薄く、扱い辛いからである。好ましくは装置基板１３に実装した後で、ＬＥＤ素子の底面から側面にかけて樹脂等で固定し、その後に成長基板を除去する。この樹脂には、第２のＬＥＤ素子からの光を反射可能な反射部材を含有させることが好ましい。 The second LED element 12 includes a semiconductor layer 122 formed of, for example, a GaN-based semiconductor that is a nitride-based compound semiconductor. A semiconductor constituting each layer of the semiconductor layer 122 is epitaxially grown on a growth substrate (not shown) by, for example, the MOCVD method or other vapor phase growth methods. The growth substrate is removed by, for example, a laser lift-off (LLO) method after forming the semiconductor layer 122. The growth substrate is preferably removed after the p-electrode 127 and the n-electrode 129 are formed and then mounted on the device substrate 13. This is because the LED element after the growth substrate is removed is extremely thin and difficult to handle. Preferably, after mounting on the device substrate 13, it is fixed with resin or the like from the bottom surface to the side surface of the LED element, and then the growth substrate is removed. This resin preferably contains a reflecting member capable of reflecting light from the second LED element.
第２のＬＥＤ素子１２の半導体層１２２は、ｎ型半導体層１２３、活性層１２４およびｐ型半導体層１２５が順に積層された構造を有している。具体的には、ｎ型半導体層１２３（ｎ型クラッド層）をたとえばＳｉをドーパントとして用いたＧａＮから形成でき、ｐ型半導体層１２５（ｐ型クラッド層）をたとえばＭｇまたはＺｎをドーパントとして用いたＧａＮから形成でき、活性層１２４をたとえばＧａＮまたはＩｎＧａＮから形成することができる。また、青色ＬＥＤを構成するために、半導体層１２２にＩｎＡｌＧａＮ系化合物を用いることができる。また、第２のＬＥＤ素子１２を緑色ＬＥＤで構成する場合には、半導体層１２２にＧａＮ系化合物を用いるもののほか、半導体層１２２にＧａＰ系化合物を用いることもできる。 The semiconductor layer 122 of the second LED element 12 has a structure in which an n-type semiconductor layer 123, an active layer 124, and a p-type semiconductor layer 125 are sequentially stacked. Specifically, the n-type semiconductor layer 123 (n-type cladding layer) can be formed from, for example, GaN using Si as a dopant, and the p-type semiconductor layer 125 (p-type cladding layer) is used, for example, as Mg or Zn as a dopant. The active layer 124 can be formed from, for example, GaN or InGaN. In addition, an InAlGaN-based compound can be used for the semiconductor layer 122 in order to form a blue LED. When the second LED element 12 is formed of a green LED, a GaP-based compound can be used for the semiconductor layer 122 in addition to a GaN-based compound used for the semiconductor layer 122.
第２のＬＥＤ素子１２のアノードと電気的に接続されるｐ電極１２７が、ｐ型半導体層１２５に接合して設けられる。また、カソードと電気的に接続されるｎ電極１２９が、ｎ型半導体層１２３に接合して設けられる。これらｐ電極１２７およびｎ電極１２９は、図３に示されるようにバンプとして形成される。ｐ電極１２７およびｎ電極１２９は、ｐ型およびｎ型半導体層１２５、１２３のそれぞれの所定位置にスパッタリング等によりアンダー・バリア・メタル（ＵＢＭ）を成膜し、成膜したＵＢＭ上に濡れ性の良い導電性金属であるたとえばＡｕをメッキすることにより得られる。 A p-electrode 127 electrically connected to the anode of the second LED element 12 is provided so as to be bonded to the p-type semiconductor layer 125. In addition, an n-electrode 129 that is electrically connected to the cathode is provided to be bonded to the n-type semiconductor layer 123. These p electrode 127 and n electrode 129 are formed as bumps as shown in FIG. The p-electrode 127 and the n-electrode 129 are formed by depositing an under barrier metal (UBM) by sputtering or the like at predetermined positions of the p-type and n-type semiconductor layers 125 and 123, and wettability is formed on the formed UBM. It is obtained by plating, for example, Au, which is a good conductive metal.
図３に示される第２のＬＥＤ素子１２は水平構造を有し、半導体層が積層する方向とは反対の方向に光が取り出されるので、装置基板１３に対してはフェース・ダウン（ＦＤ）実装されることとなる。また、図４に示されるように第２のＬＥＤ素子１２は垂直構造であってもよく、装置基板１３に対しｎ電極１２９がＦＵ実装されるものでもよい。 The second LED element 12 shown in FIG. 3 has a horizontal structure, and light is extracted in a direction opposite to the direction in which the semiconductor layers are stacked. Therefore, the second LED element 12 is mounted face down (FD) on the device substrate 13. Will be. As shown in FIG. 4, the second LED element 12 may have a vertical structure, and the n electrode 129 may be mounted on the device substrate 13 by FU.
（半導体光源装置）
次に、本発明に係る半導体光源装置の実施形態をいくつか例示して説明する。なお、以下の説明において参照される図において、発明の理解を容易にするために主要な構成のみが示され、また一部の寸法が誇張して描かれている。
(Semiconductor light source device)
Next, several embodiments of the semiconductor light source device according to the present invention will be described as examples. In the drawings referred to in the following description, only main components are shown for facilitating understanding of the invention, and some dimensions are exaggerated.
図５は、一つの実施形態による半導体光源装置１０の略平面図である。この実施形態では、装置基板１３上において、第１のＬＥＤ素子１１の両側に第２のＬＥＤ素子１２が実装される。図６は、図５に示された半導体光源装置１０をＶ方向から見た場合の側面図である。図６に示されるように、この半導体光源装置１０では、第１のＬＥＤ素子１１が成長基板１１１を介して装置基板１３に実装されることにより、第１のＬＥＤ素子１１の発光層１１４または半導体層１１２が、第２のＬＥＤ素子１２の上面（つまり光取り出し面１２ａ）よりも装置基板１３に対し高い位置にある。 FIG. 5 is a schematic plan view of the semiconductor light source device 10 according to one embodiment. In this embodiment, the second LED element 12 is mounted on both sides of the first LED element 11 on the device substrate 13. FIG. 6 is a side view of the semiconductor light source device 10 shown in FIG. 5 when viewed from the V direction. As shown in FIG. 6, in the semiconductor light source device 10, the first LED element 11 is mounted on the device substrate 13 via the growth substrate 111, whereby the light emitting layer 114 or the semiconductor of the first LED element 11. The layer 112 is positioned higher than the upper surface of the second LED element 12 (that is, the light extraction surface 12a) with respect to the device substrate 13.
ここで、「装置基板１３に対し高い位置にある」とは、第１のＬＥＤ素子１１の発光層１１４または半導体層１１２のほうが第２のＬＥＤ素子１２の上面（つまり光取り出し面１２ａ）よりも装置基板１３から相対的に離れた位置にあることを意味する。 Here, “being higher than the device substrate 13” means that the light emitting layer 114 or the semiconductor layer 112 of the first LED element 11 is more than the upper surface of the second LED element 12 (that is, the light extraction surface 12a). It means that it is at a position relatively distant from the device substrate 13.
この実施形態の半導体光源装置１０では、装置基板１３に対し高いほうの第１のＬＥＤ素子１１と、装置基板１３に対して低いほうの第２のＬＥＤ素子１２とが交互に実装されている。この場合、第１のＬＥＤ素子１１の数が１個であるのに対し第２のＬＥＤ素子１２の数が２個であり、そのため、第１のＬＥＤ素子１１の発光面積よりも第２のＬＥＤ素子１２の発光面積のほうが広く形成されている。第１のＬＥＤ素子１１の発光面積と第２のＬＥＤ素子１２の発光面積の比率は、所望の色調に応じて適宜調整可能であるが、例えば、第１のＬＥＤ素子１１が赤色もしくは青緑、第２のＬＥＤ素子１２が青色の場合、（第１のＬＥＤ素子１１の発光面積：第２のＬＥＤ素子１２の発光面積）は１：１．８〜１：３程度が例示される。 In the semiconductor light source device 10 of this embodiment, the first LED element 11 that is higher than the device substrate 13 and the second LED element 12 that is lower than the device substrate 13 are alternately mounted. In this case, the number of the first LED elements 11 is one and the number of the second LED elements 12 is two. Therefore, the second LED is larger than the light emitting area of the first LED element 11. The light emitting area of the element 12 is formed wider. The ratio of the light emitting area of the first LED element 11 and the light emitting area of the second LED element 12 can be appropriately adjusted according to a desired color tone. For example, the first LED element 11 is red or blue-green, When the second LED element 12 is blue, (light emission area of the first LED element 11: light emission area of the second LED element 12) is about 1: 1.8 to 1: 3.
第２のＬＥＤ素子１２には、その上面である光取り出し面１２ａを被覆するように波長変換部材（２１、２２、２３、２４）が配置される。一方、第１のＬＥＤ素子１１には波長変換部材が被覆されていない。 The second LED element 12 is provided with wavelength conversion members (21, 22, 23, 24) so as to cover the light extraction surface 12a which is the upper surface thereof. On the other hand, the first LED element 11 is not covered with a wavelength conversion member.
波長変換部材に用いられる蛍光体材料としては、たとえば、Ｃｅ、Ｅｕ等のランタノイド系元素で賦活される、窒化物系蛍光体または酸窒化物系蛍光体を用いることができる。ただし、第２のＬＥＤ素子１２の光を所望の波長の光に変換するものであれば特に限定されない。
蛍光体材料として具体的には、たとえば、Ｃｅ等のランタノイド元素で賦活される希土類アルミン酸塩を用いることができ、そのうちＹＡＧ系蛍光体材料が好適に用いられる。また、ＹＡＧ系蛍光体材料のうちＹの一部または全部をＴｂ、Ｌｕで置換したものでもよい。また、Ｃｅで賦活される希土類ケイ酸塩等を蛍光体材料に用いることができる。
また、Ｅｕ等のランタノイド系元素で賦活される、アルカリ土類ハロゲンアパタイト、アルカリ土類金属ホウ酸ハロゲン、アルカリ土類金属アルミン酸塩、アルカリ土類金属硫化物、アルカリ土類金属硫チオガレート、アルカリ土類金属窒化ケイ素またはゲルマン酸塩、もしくはＥｕ等のランタノイド系元素で賦活される有機または有機錯体を蛍光体材料として用いることができる。例えば赤色蛍光体として、（Ｓｒ，Ｃａ）ＡｌＳｉＮ３：ＥｕのようなＳＣＡＳＮ系蛍光体、ＣａＡｌＳｉＮ３：ＥｕのようなＣＡＳＮ系蛍光体、ＳｒＡｌＳｉＮ３：Ｅｕ、Ｋ２ＳｉＦ６：Ｍｎ等がある。他にも、発光素子の青色光を吸収して緑色光を発光する、例えば、クロロシリケート蛍光体やβサイアロン蛍光体等を用いることができる。
As the phosphor material used for the wavelength conversion member, for example, a nitride phosphor or an oxynitride phosphor activated by a lanthanoid element such as Ce or Eu can be used. However, there is no particular limitation as long as the light of the second LED element 12 is converted into light of a desired wavelength.
Specifically, for example, a rare earth aluminate activated by a lanthanoid element such as Ce can be used, and among these, a YAG phosphor material is preferably used. In addition, a part or all of Y in the YAG phosphor material may be substituted with Tb and Lu. Moreover, rare earth silicates activated by Ce can be used for the phosphor material.
Also activated by lanthanoid elements such as Eu, alkaline earth halogen apatite, alkaline earth metal halogen borate, alkaline earth metal aluminate, alkaline earth metal sulfide, alkaline earth metal sulfur thiogallate, alkali An organic or organic complex activated by earth metal silicon nitride, germanate, or a lanthanoid element such as Eu can be used as the phosphor material. Examples of red phosphors include SCASN phosphors such as (Sr, Ca) AlSiN 3 : Eu, CASN phosphors such as CaAlSiN 3 : Eu, SrAlSiN 3 : Eu, K 2 SiF 6 : Mn, and the like. In addition, for example, a chlorosilicate phosphor or a β sialon phosphor that absorbs blue light of the light emitting element and emits green light can be used.
波長変換部材の一つの実施形態は、図６に示される蛍光体シート２１ａである。蛍光体シート２１ａは、上述したような蛍光体材料を透光性の樹脂バインダーに混合し、ある程度の可撓性を維持してシート状に加工したものである。樹脂の種類としては、シリコーン樹脂、エポキシ樹脂、ユリア樹脂、フッ素樹脂、および、それらの樹脂を少なくとも一種以上含むハイブリッド樹脂等、耐候性に優れた透光性樹脂を用いることができる。変色が起こりにくく性状が安定しているシリコーン樹脂がより好ましい。熱硬化または光硬化性樹脂を混合して樹脂バインダーを調製し、蛍光体シート２１ａを第２のＬＥＤ素子１２に配置した後に所定の方法で硬化させてもよい。 One embodiment of the wavelength conversion member is a phosphor sheet 21a shown in FIG. The phosphor sheet 21a is obtained by mixing the phosphor material as described above into a translucent resin binder and processing it into a sheet shape while maintaining a certain degree of flexibility. As a kind of resin, a translucent resin excellent in weather resistance, such as a silicone resin, an epoxy resin, a urea resin, a fluororesin, and a hybrid resin including at least one of those resins can be used. A silicone resin that is less susceptible to discoloration and has stable properties is more preferable. A resin binder may be prepared by mixing a thermosetting or photocurable resin, and the phosphor sheet 21a may be disposed on the second LED element 12 and then cured by a predetermined method.
波長変換部材の他の実施形態が、図７〜９に示される。図７には上述したような蛍光体材料を含む樹脂２２を第２のＬＥＤ素子１２の光取り出し面１２ａの上に電着した例が示される。図８にはスプレーを用いて蛍光体材料２３を第２のＬＥＤ素子１２に塗布する例が示される。図９には蛍光体材料を含む樹脂２４を第２のＬＥＤ素子１２上にポッティング（滴下）することにより被覆する例が示される。 Other embodiments of the wavelength converting member are shown in FIGS. FIG. 7 shows an example in which the resin 22 containing the phosphor material as described above is electrodeposited on the light extraction surface 12 a of the second LED element 12. FIG. 8 shows an example in which the phosphor material 23 is applied to the second LED element 12 using a spray. FIG. 9 shows an example in which a resin 24 containing a phosphor material is coated on the second LED element 12 by potting (dropping).
このように、第２のＬＥＤ素子１２の上面には、図６〜９に例示された方法または他の適当な方法によって波長変換部材（２１、２２、２３、２４）が被覆される。波長変換部材を構成する蛍光体材料を含む流動性を有する樹脂は、第１のＬＥＤ素子１１の成長基板１１１に対し濡れ性がないことが好ましい。しかし、波長変換部材の樹脂が成長基板１１１に対し仮に濡れ性を有していたとしても、図８または図９に示されるように成長基板１１１の側面のみに付着し、第１のＬＥＤ素子１１の少なくとも上面には付着しない。このように、第１および第２のＬＥＤ素子１１、１２に高低差を設けることで、低いほうの第２のＬＥＤ素子１２のみに選択的に波長変換部材を配置することができるようになる。したがって、波長変換の不要な第１のＬＥＤ素子１１には波長変換部材が被覆されないため、波長変換部材による吸収がなくなり、光束の低下が抑制される。また、ウェハーからダイシングした第１のＬＥＤ素子１１を成長基板１１１を除去せずにそのまま装置基板１３に実装するだけで、発光層１１４を嵩上げすることができる。したがって、製造工程数の増加を伴わずに量産化に適した半導体光源装置１０を得ることができる。 Thus, the wavelength conversion member (21, 22, 23, 24) is coated on the upper surface of the second LED element 12 by the method illustrated in FIGS. The resin having fluidity including the phosphor material constituting the wavelength conversion member preferably has no wettability with respect to the growth substrate 111 of the first LED element 11. However, even if the resin of the wavelength conversion member has wettability with respect to the growth substrate 111, it adheres only to the side surface of the growth substrate 111 as shown in FIG. It does not adhere to at least the top surface of. As described above, by providing the first and second LED elements 11 and 12 with a height difference, the wavelength conversion member can be selectively disposed only on the lower second LED element 12. Therefore, since the wavelength conversion member is not covered with the first LED element 11 that does not require wavelength conversion, absorption by the wavelength conversion member is eliminated, and a decrease in luminous flux is suppressed. Further, the light emitting layer 114 can be raised by simply mounting the first LED element 11 diced from the wafer on the device substrate 13 without removing the growth substrate 111. Therefore, the semiconductor light source device 10 suitable for mass production can be obtained without increasing the number of manufacturing steps.
半導体光源装置１０のもう一つの実施形態では、第１のＬＥＤ素子１１を赤色ＬＥＤ素子で構成し、第２のＬＥＤ素子１２を青色ＬＥＤ素子で構成することができる。 In another embodiment of the semiconductor light source device 10, the first LED element 11 can be composed of a red LED element, and the second LED element 12 can be composed of a blue LED element.
この場合、波長変換部材（２１、２２、２３、２４）は、第２のＬＥＤ素子１２から放出された青色光の一部をより長い波長の光に変換する。第２のＬＥＤ素子１２からの光のうち、蛍光体シート２１ａを介してその一部が波長変換された黄色光と、波長変換されずに通過した青色光とが混合することにより、人の視覚では白と認識される白色光が得られる。この半導体光源装置１０では、この第２のＬＥＤ素子１２から得られる白色光と、第１のＬＥＤ素子１１から得られる赤色光とを合成することにより、演色性の高い、すなわち太陽光に近い自然な白色光を得ることができる。また、赤色を放出する第１のＬＥＤ素子１１の輝度または強度を上げ、または第１のＬＥＤ素子１１の発光面積を相対的に広くすることにより、半導体光源装置１０が照射する光を、たとえば白熱灯のような色温度が比較的高い光に調整することができる。 In this case, the wavelength conversion member (21, 22, 23, 24) converts part of the blue light emitted from the second LED element 12 into light having a longer wavelength. Of the light from the second LED element 12, yellow light, part of which has been wavelength-converted via the phosphor sheet 21a, and blue light that has passed without being wavelength-converted are mixed, thereby allowing human vision. Produces white light that is recognized as white. In the semiconductor light source device 10, the white light obtained from the second LED element 12 and the red light obtained from the first LED element 11 are combined to provide a high color rendering property, that is, a natural property close to sunlight. White light can be obtained. Further, the brightness or intensity of the first LED element 11 that emits red light is increased, or the light emission area of the first LED element 11 is relatively widened, so that the light emitted from the semiconductor light source device 10 is incandescent, for example. It can be adjusted to light having a relatively high color temperature such as a lamp.
半導体光源装置１０のさらに他の実施形態では、第１のＬＥＤ素子１１および第２のＬＥＤ素子１２がそれぞれ窒化物系化合物半導体で構成される。たとえば、第１のＬＥＤ素子１１を緑色ないし青緑色ＬＥＤ素子で構成し、第２のＬＥＤ素子１２を青色ＬＥＤ素子で構成することができる。第１および第２のＬＥＤ素子１１、１２を共に青色ＬＥＤ素子で構成してもよい。この実施形態の半導体光源装置１０によれば、第２のＬＥＤ素子１２から得られる白色光と、第１のＬＥＤ素子１１から得られる緑色ないしは青色の光とが混合することにより、色温度が比較的低い青白い光を得ることができる。 In still another embodiment of the semiconductor light source device 10, the first LED element 11 and the second LED element 12 are each composed of a nitride compound semiconductor. For example, the 1st LED element 11 can be comprised with a green thru | or blue-green LED element, and the 2nd LED element 12 can be comprised with a blue LED element. You may comprise both the 1st and 2nd LED elements 11 and 12 with a blue LED element. According to the semiconductor light source device 10 of this embodiment, the white light obtained from the second LED element 12 and the green or blue light obtained from the first LED element 11 are mixed to compare the color temperatures. Low pale light.
図１０〜１２はさらに他の実施形態による半導体光源装置１０の略平面図であり、それぞれ第１および第２のＬＥＤ素子の配置構成（発光部の配置構成）が異なっている。 10 to 12 are schematic plan views of a semiconductor light source device 10 according to still another embodiment, and the arrangement configuration of the first and second LED elements (the arrangement configuration of the light emitting units) is different.
図１０の実施形態では、半導体光源装置１０が１箇所の第１発光部３１と、２箇所の第２発光部３２とを備え、第１発光部３１を挟む両側に第２発光部３２が配置される。 In the embodiment of FIG. 10, the semiconductor light source device 10 includes one first light emitting unit 31 and two second light emitting units 32, and the second light emitting units 32 are arranged on both sides of the first light emitting unit 31. Is done.
図１１の実施形態では、第２発光部３２の四辺に近接して囲むように、第１発光部３１が４箇所に配置される。 In the embodiment of FIG. 11, the first light emitting units 31 are arranged at four locations so as to surround and surround the four sides of the second light emitting unit 32.
図１２の実施形態では、第１発光部３１の周囲（八方）を取り囲むように、第２発光部３２が８箇所に配置される。 In the embodiment of FIG. 12, the second light emitting units 32 are arranged at eight locations so as to surround the periphery (eight sides) of the first light emitting unit 31.
上述した図１０〜１２の実施形態では、第１発光部３１を構成するＬＥＤ素子の総数よりも、第２発光部３２を構成するＬＥＤ素子の総数のほうが多く、そのため、第１発光部３１の発光面積よりも第２発光部３２の発光面積のほうが広く形成されている。 In the embodiment of FIGS. 10 to 12 described above, the total number of LED elements configuring the second light emitting unit 32 is larger than the total number of LED elements configuring the first light emitting unit 31. The light emitting area of the second light emitting unit 32 is formed wider than the light emitting area.
また、第１発光部３１を構成する各ＬＥＤ素子の発光層１１４または半導体層１１２全体が、第２発光部３２を構成する各ＬＥＤ素子の上面よりも装置基板に対し高い位置にある。そのため、第２発光部３２のみ波長変換部材を配置することができ、所要の演色性を有する照明光を得ることができる。 In addition, the light emitting layer 114 or the entire semiconductor layer 112 of each LED element constituting the first light emitting unit 31 is located higher than the upper surface of each LED element constituting the second light emitting unit 32 with respect to the device substrate. Therefore, the wavelength conversion member can be disposed only in the second light emitting unit 32, and illumination light having a required color rendering property can be obtained.
図１０〜１２に示した第１発光部３１および第２発光部３２の配置構成は例示であり、半導体光源装置１０の使用目的や要求される光源の特性等に応じて任意に変更が可能である。また、図５や図１０〜１２に代表される第１発光部３１および第２発光部３２の組み合わせをモジュール光源として形成し、半導体光源装置１０がこのようなモジュール光源の組み合せを複数含むものでもよい。 The arrangement of the first light emitting unit 31 and the second light emitting unit 32 shown in FIGS. 10 to 12 is an exemplification, and can be arbitrarily changed according to the purpose of use of the semiconductor light source device 10 or the required light source characteristics. is there. Further, a combination of the first light emitting unit 31 and the second light emitting unit 32 typified by FIG. 5 and FIGS. 10 to 12 is formed as a module light source, and the semiconductor light source device 10 includes a plurality of combinations of such module light sources. Good.
１０ 半導体光源装置
１１ 第１のＬＥＤ素子
１２ 第２のＬＥＤ素子
１３ 装置基板
２１、２２、２３、２４ 波長変換部材
３１ 第１発光部
３２ 第２発光部
１１１ 成長基板
１１２ 半導体層
１１４ 活性層（発光層）
１１６ 光反射層
１１７ ｐ電極
１１８ ｐ型拡散層
１１９ ｎ電極
１２２ 半導体層
１２４ 活性層（発光層）
１２７ ｐ電極
１２９ ｎ電極
DESCRIPTION OF SYMBOLS 10 Semiconductor light source device 11 1st LED element 12 2nd LED element 13 Device board | substrate 21, 22, 23, 24 Wavelength conversion member 31 1st light emission part 32 2nd light emission part 111 Growth substrate 112 Semiconductor layer 114 Active layer (light emission) layer)
116 light reflection layer 117 p electrode 118 p type diffusion layer 119 n electrode 122 semiconductor layer 124 active layer (light emitting layer)
127 p electrode 129 n electrode
Claims (11)
前記第１のＬＥＤ素子が成長基板を含み、当該成長基板を介して前記装置基板に実装されることにより、
前記第１のＬＥＤ素子の発光層が前記第２のＬＥＤ素子の上面よりも前記装置基板に対し高い位置にあり、
前記波長変換部材は、前記第２のＬＥＤ素子を被覆し、前記第１のＬＥＤ素子の上面には付着せず、
前記第１のＬＥＤ素子の周囲は複数の前記第２のＬＥＤ素子により取り囲まれ、
前記波長変換部材は、前記第１のＬＥＤ素子の成長基板の側面に付着し、
前記波長変換部材は、前記第１のＬＥＤ素子を中心にして外側に向かって厚さが小さくなるように傾斜している半導体光源装置。 A semiconductor light source device comprising a first LED element, a second LED element, and a wavelength conversion member mounted on an apparatus substrate,
The first LED element includes a growth substrate, and is mounted on the device substrate via the growth substrate,
The light emitting layer of the first LED element is at a higher position with respect to the device substrate than the upper surface of the second LED element;
The wavelength conversion member covers the second LED element, does not adhere to the upper surface of the first LED element ,
The periphery of the first LED element is surrounded by a plurality of the second LED elements,
The wavelength conversion member is attached to a side surface of the growth substrate of the first LED element,
The wavelength conversion member is a semiconductor light source device that is inclined so that its thickness decreases toward the outside with the first LED element as a center .
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |