JP6277721B2 - 放射線検出装置およびその製造方法 - Google Patents
放射線検出装置およびその製造方法 Download PDFInfo
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- JP6277721B2 JP6277721B2 JP2013551810A JP2013551810A JP6277721B2 JP 6277721 B2 JP6277721 B2 JP 6277721B2 JP 2013551810 A JP2013551810 A JP 2013551810A JP 2013551810 A JP2013551810 A JP 2013551810A JP 6277721 B2 JP6277721 B2 JP 6277721B2
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- partition wall
- photodetector
- coating film
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- 125000000524 functional group Chemical group 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
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- 229910000464 lead oxide Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
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- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- VHXJRLYFEJAIAM-UHFFFAOYSA-N quinoline-2-sulfonyl chloride Chemical compound C1=CC=CC2=NC(S(=O)(=O)Cl)=CC=C21 VHXJRLYFEJAIAM-UHFFFAOYSA-N 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
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- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- GBECUEIQVRDUKB-UHFFFAOYSA-M thallium monochloride Chemical compound [Tl]Cl GBECUEIQVRDUKB-UHFFFAOYSA-M 0.000 description 1
- CULOEOTWMUCRSJ-UHFFFAOYSA-M thallium(i) fluoride Chemical compound [Tl]F CULOEOTWMUCRSJ-UHFFFAOYSA-M 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/2019—Shielding against direct hits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Measurement Of Radiation (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
Description
(1) 表面に隔壁が形成された基板と、光検出器と、が対向してなる放射線検出装置であり、上記基板と上記光検出器との間の空間には、上記隔壁で区画されたセルが形成されており、上記セルには、蛍光体が充填されており、上記隔壁が接していない上記光検出器の表面には、光検出画素が設けられており、上記隔壁および上記蛍光体と、上記光検出器との間に、接着層が形成されており、前記隔壁の高さL1は、隣接する隔壁の間隔L2よりも大きく、かつ、前記隔壁と前記基板とが接した界面の幅L3は、前記隔壁の頂部の幅L4よりも大きく、かつ、前記基板は、表面に放射線遮蔽層を有するか、または、前記基板は、放射線遮蔽材料からなり、前記光検出器側から放射線が入射する、放射線検出装置。
(2) 上記接着層は、アクリル樹脂、エポキシ樹脂、ポリエステル樹脂、ブチラール樹脂、ポリアミド樹脂、シリコーン樹脂およびエチルセルロース樹脂からなる群から選ばれる樹脂で形成されている、上記(1)記載の放射線検出装置。
(3) 上記蛍光体、上記光検出画素および上記接着層の平均屈折率を、それぞれλ1、λ2およびλ3とした場合に、λ2≧λ1≧λ3の関係を満たす、上記(1)または(2)に記載の放射線検出装置。
(4) 上記隔壁は、アルカリ金属酸化物を2〜20質量%含有する低融点ガラスを主成分とする材料からなる、上記(1)〜(3)のいずれかに記載の放射線検出装置。
(5) 上記隔壁の表面および上記基板上の隔壁の形成されていない部分に、反射膜が形成されている、上記(1)〜(4)のいずれかに記載の放射線検出装置。
(6) 基板上に、低融点ガラスと感光性有機成分とを含有する感光性ペーストを塗布し、感光性ペースト塗布膜を形成する工程と、得られた感光性ペースト塗布膜を露光する露光工程と、露光後の感光性ペースト塗布膜の現像液に可溶な部分を溶解除去する現像工程と、現像後の感光性ペースト塗布膜パターンを500℃〜700℃の焼成温度に加熱して有機成分を除去すると共に低融点ガラスを軟化および焼結させ、隔壁を形成する焼成工程と、前記隔壁により区画されたセル内に蛍光体を充填する工程と、前記蛍光体および前記隔壁上に、接着剤塗布膜を形成する工程と、光検出器を、前記接着剤塗布膜の上に、シンチレータパネル上に設けられた隔壁と、光検出器上に設けられた、光検出画素とが、対向し、隔壁が隣り合う光検出画素の間に位置するように重ねた後、前記接着剤塗布膜を硬化させて、接着層とする工程と、を備える、シンチレータパネルの製造方法。
酸化亜鉛:3〜10質量%
酸化ケイ素:20〜40質量%
酸化ホウ素:25〜40質量%
酸化アルミニウム:10〜30質量%
アルカリ土類金属酸化物:5〜15質量%
なお、アルカリ土類金属とは、マグネシウム、カルシウム、バリウムおよびストロンチウムからなる群から選ばれる1種類以上の金属をいう。
λ2≧λ1≧λ3
の関係を満たすことが好ましい。また、界面における光散乱を最小限に抑制し、蛍光体の発光光を効率的に光検出画素へと導いて輝度を向上させるため、蛍光体と接着層との平均屈折率の差は、0.8未満であることが好ましい。ここで平均屈折率とは、蛍光体または接着層が単一の材料からなる場合には、その材料の屈折率をいう。また。蛍光体または接着層が複数種の材料からなる場合には、各々の屈折率の加重平均値をいう。
実施例の感光性ペーストに用いた原料は次のとおりである。
感光性モノマーM−1 : トリメチロールプロパントリアクリレート
感光性モノマーM−2 : テトラプロピレングリコールジメタクリレート
感光性ポリマー : メタクリル酸/メタクリル酸メチル/スチレン=40/40/30の質量比からなる共重合体のカルボキシル基に対して0.4当量のグリシジルメタクリレートを付加反応させたもの(重量平均分子量43000、酸価100)
光重合開始剤 : 2−ベンジル−2−ジメチルアミノ−1−(4−モルフォリノフェニル)ブタノン−1(BASF社製「IC369」)
重合禁止剤 : 1,6−ヘキサンジオール−ビス[(3,5−ジ−t−ブチル−4−ヒドロキシフェニル)プロピオネート])
紫外線吸収剤溶液 : スダンIV(東京応化工業株式会社製)のγ−ブチロラクトン0.3質量%溶液
有機樹脂バインダー : エチルセルロース(ハーキュレス社製)
粘度調整剤 : フローノンEC121(共栄社化学社製)
溶媒 : γ−ブチロラクトン
低融点ガラス粉末:
SiO2 27質量%、B2O3 31質量%、ZnO 6質量%、Li2O 7質量%、MgO 2質量%、CaO 2質量%、BaO 2質量%、Al2O3 23質量%、屈折率(ng):1.56、ガラス軟化温度588℃、熱膨張係数70×10−7、平均粒子径2.3μm。
隔壁用感光性ペーストA:4質量部の感光性モノマーM−1、6質量部の感光性モノマーM−2、24質量部の感光性ポリマー、6質量部の光重合開始剤、0.2質量部の重合禁止剤および12.8質量部の紫外線吸収剤溶液を、38質量部の溶媒に、温度80℃で加熱溶解した。得られた溶液を冷却した後、9質量部の粘度調整剤を添加して、有機溶液を作製した。有機溶液をガラス基板に塗布して乾燥することにより得られた有機塗膜の屈折率(ng)は、1.555であった。
500mm×500mm×厚さ0.5mmのガラス基板(日本電気硝子社製「OA−10」)の表面に、屈折率3.5のアモルファスシリコンからなるPIN型フォトダイオードと、TFTによって構成される画素サイズ125μm×125μmの光検出画素を、マトリックス状に複数個形成した。次に、PIN型フォトダイオードにバイアスを印加するバイアス配線、TFTに駆動信号を印加する駆動配線、TFTによって転送された信号電荷を出力する信号配線等の配線部をアルミで形成して、光検出器を作製した。
500mm×500mmのガラス基板(日本電気硝子社製「OA−10」)に、隔壁用感光性ペーストを乾燥厚さ500μmになるように、ダイコーターで塗布し、乾燥して、隔壁用感光性ペースト塗布膜を形成した。次に、所望の隔壁パターンに対応する開口部を形成したフォトマスク(ピッチ125μm、線幅10μmの格子状開口部を有するクロムマスク)を介して、隔壁用感光性ペースト塗布膜を、超高圧水銀灯を用いて700mJ/cm2の露光量で露光した。露光後の隔壁用感光性ペースト塗布膜を、0.5質量%のエタノールアミン水溶液中で現像し、未露光部分を除去して、格子状の感光性ペースト塗布膜パターンを形成した。さらに585℃で15分間、空気中で感光性ペースト塗布膜パターンを焼成し、その表面に隔壁の間隔L2が125μm、頂部幅L4が10μm、底部幅L3が20μm、隔壁の高さL1が340μmで、480mm×480mmの大きさの格子状隔壁が形成された基板を作製した。
実施例1と同じ方法で、格子状隔壁が形成された基板を作製した。その後、隔壁表面および隔壁の形成されていない箇所の基板表面に、バッチ式スパッタリング装置(アルバック社製「SV−9045」)でアルミ膜すなわち反射膜を形成した。形成されたアルミ膜の、隔壁頂部での厚みは300nm、隔壁側面のアルミ膜の厚みは100nm、基板上のアルミ膜の厚みは100nmであった。
実施例1のガラス基板を300×300mmのタングステン基板(アプライドマテリアル製)に変更した以外は、実施例1と同じ方法で、放射線検出装置を作製して評価した。その結果、放射線検出装置を透過したX線が、タングステン基板に吸収されたためノイズが低下し、輝度は110、鮮鋭度は165と、いずれも良好な値であった。
実施例1と同じ方法で蛍光体を充填したシンチレータパネルを作製した。その後、接着層を形成する代わりに、基板の外周部に、アクリル樹脂を主体とする光硬化性封止樹脂をディスペンサーで所定の量塗布した以外は、実施例1と同様にして光検出器を重ねた後、樹脂を硬化させて放射線検出装置を作製した。この時基板のたわみにより、中央部で部分的にシンチレータパネルと光検出器の間に隙間が発生した。この放射線検出装置を、実施例1と同じ方法で評価した。その結果、輝度が30、鮮鋭度は129と輝度が大幅に低下した。
500mm×500mmのガラス基板(日本電気硝子社製「OA−10」)に、縦方向および横方向のピッチ125μm、壁幅35μmで所定の画素数に見合う大きさのパターンを用いて、前記隔壁用スクリーン印刷ペーストをスクリーン印刷によって、膜厚40μmでの塗布および乾燥を12層繰り返した。その後、550℃の空気中で焼成を行い、隔壁の間隔L2が125μm、頂部幅L4が52μm、底部幅L3が45μm、隔壁の高さL1が350μmで、所定の画素数に見合う大きさとして480mm×480mmの大きさの格子状隔壁が形成された基板を作製した。形成した隔壁を観察したところ、部分的な断線が面内に数箇所発生していた。その後、接着層を形成しない以外は、実施例1と同様に光検出器を重ね合わせた後、基板周辺部をクリップにて挟みこみ、基板と光検出器を固定した。以降、実施例1と同じ方法で、放射線検出装置を作製して評価した。その結果、輝度は65、鮮鋭度は98であり、輝度の低下が顕著であった。
シンチレータパネルに隔壁を形成せず、蛍光体ベタ膜を形成した以外は、実施例1と同じ方法で放射線検出装置を作製した。実施例1と同じ方法で、輝度および鮮鋭度を測定した。
2 シンチレータパネル
3 光検出器
4 基板
5 放射線遮蔽層
6 隔壁
7 蛍光体(シンチレータ層)
8 反射膜、遮光膜
9 光検出画素
10 光検出器側基板
11 接着層
Claims (6)
- 表面に隔壁が形成された基板と、光検出器と、が対向してなる放射線検出装置であり、
前記基板と前記光検出器との間の空間には、前記隔壁で区画されたセルが形成されており、
前記セルには、蛍光体が充填されており、
前記隔壁が接していない前記光検出器の表面には、光検出画素が設けられており、
前記隔壁および前記蛍光体と、前記光検出器との間に、接着層が形成されており、
前記隔壁の高さL1は、隣接する隔壁の間隔L2よりも大きく、かつ、前記隔壁と前記基板とが接した界面の幅L3は、前記隔壁の頂部の幅L4よりも大きく、かつ、
前記基板は、表面に放射線遮蔽層を有するか、または、前記基板は、放射線遮蔽材料からなり、
前記光検出器側から放射線が入射する、
放射線検出装置。 - 前記接着層は、アクリル樹脂、エポキシ樹脂、ポリエステル樹脂、ブチラール樹脂、ポリアミド樹脂、シリコーン樹脂およびエチルセルロース樹脂からなる群から選ばれる樹脂で形成されている、請求項1記載の放射線検出装置。
- 前記蛍光体、前記光検出画素および前記接着層の平均屈折率を、それぞれλ1、λ2およびλ3とした場合に、λ2≧λ1≧λ3の関係を満たす、請求項1または2記載の放射線検出装置。
- 前記隔壁は、アルカリ金属酸化物を2〜20質量%含有する低融点ガラスを主成分とする材料からなる、請求項1〜3のいずれか一項記載の放射線検出装置。
- 前記隔壁の表面および前記基板上の隔壁の形成されていない面に、反射膜が形成されている、請求項1〜4のいずれか一項記載の放射線検出装置。
- 基板上に、低融点ガラスと感光性有機成分とを含有する感光性ペーストを塗布し、感光性ペースト塗布膜を形成する工程と、
得られた感光性ペースト塗布膜を露光する露光工程と、
露光後の感光性ペースト塗布膜の現像液に可溶な部分を溶解除去する現像工程と、
現像後の感光性ペースト塗布膜パターンを500℃〜700℃の焼成温度に加熱して有機成分を除去すると共に低融点ガラスを軟化および焼結させ、隔壁を形成する焼成工程と、
前記隔壁により区画されたセル内に蛍光体を充填する工程と、
前記蛍光体および前記隔壁上に、接着剤塗布膜を形成する工程と、
光検出器を、前記接着剤塗布膜の上に、シンチレータパネル上に設けられた隔壁と、光検出器上に設けられた、光検出画素とが、対向し、隔壁が隣り合う光検出画素の間に位置するように重ねた後、前記接着剤塗布膜を硬化させて、接着層とする工程と、
を備える、請求項1〜5のいずれか一項記載の放射線検出装置の製造方法。
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-
2013
- 2013-10-22 WO PCT/JP2013/078560 patent/WO2014069284A1/ja active Application Filing
- 2013-10-22 US US14/439,944 patent/US20150316659A1/en not_active Abandoned
- 2013-10-22 EP EP13850661.3A patent/EP2916145A4/en not_active Withdrawn
- 2013-10-22 JP JP2013551810A patent/JP6277721B2/ja active Active
- 2013-10-22 CN CN201380057056.4A patent/CN104781691A/zh active Pending
- 2013-10-22 KR KR1020157008918A patent/KR20150079591A/ko not_active Application Discontinuation
- 2013-10-25 TW TW102138582A patent/TWI574670B/zh active
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Publication number | Publication date |
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TWI574670B (zh) | 2017-03-21 |
EP2916145A4 (en) | 2016-07-13 |
US20150316659A1 (en) | 2015-11-05 |
WO2014069284A1 (ja) | 2014-05-08 |
JPWO2014069284A1 (ja) | 2016-09-08 |
TW201434442A (zh) | 2014-09-16 |
CN104781691A (zh) | 2015-07-15 |
KR20150079591A (ko) | 2015-07-08 |
EP2916145A1 (en) | 2015-09-09 |
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