JP6275353B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- JP6275353B2 JP6275353B2 JP2017547695A JP2017547695A JP6275353B2 JP 6275353 B2 JP6275353 B2 JP 6275353B2 JP 2017547695 A JP2017547695 A JP 2017547695A JP 2017547695 A JP2017547695 A JP 2017547695A JP 6275353 B2 JP6275353 B2 JP 6275353B2
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- 239000004065 semiconductor Substances 0.000 title claims description 74
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 73
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 72
- 239000012535 impurity Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 101
- 230000005684 electric field Effects 0.000 description 43
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 230000003068 static effect Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
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Description
まず、本発明の実施の形態1にかかる炭化珪素半導体装置の構成を説明する。
図1は、実施の形態1にかかる炭化珪素半導体装置であるpn接合ダイオードの構成を示す断面模式図である。図1に示すように、本実施の形態のpn接合ダイオードは、低抵抗でn型の炭化珪素半導体基板1の第1の主面上に炭化珪素からなるn型のドリフト層2が形成されている。ドリフト層2の上には、p型のアノード層3が形成されている。本実施の形態のpn接合ダイオードは、断面が台形状のメサ型であり、アノード層3からドリフト層2にかけて側面が斜めに切り落とされたメサ構造をしている。
アノード層3の表面上にはアノード電極7が形成されており、炭化珪素半導体基板1の下側にカソード電極8が形成されている。また、メサ底部の低ドーピング領域4の外周側には、外側低ドーピング領域9が形成されており、低ドーピング領域4、高ドーピング領域5が形成されたドリフト層2とアノード層3のメサ側面とメサ底面の表面側には絶縁層6が形成されている。絶縁層6は、アノード層3の表面のアノード電極7の周囲にも形成されている。
また、低ドーピング領域4とドリフト層2との界面も、メサ底面およびアノード層3の表面に対して傾斜しており、その角度は、10度以上80度以下などである。
本実施の形態のSiC−pn接合ダイオードにおいて、アノード電極7に対してカソード電極8に負の電圧を印加すると、アノード電極7からカソード電極8に電流が流れ、pn接合ダイオードは導通状態(オン状態)となる。一方、アノード電極7に対してカソード電極8に正の電圧を印加すると、アノード層3とドリフト層2の間のpn接合によって電流が阻止され、pn接合ダイオードは阻止状態(オフ状態)となる。
また、図10にその断面模式図を示すように、アノード端部10からメサ端部11にかけて、間隙を挟んでいくつかにわかれていてもよい。高ドーピング領域5の配置は、耐圧、動作周波数に合わせて不純物濃度、全長、注入領域幅、間隙幅、間隙数を適正に設計して配置すればよい。
さらに、炭化珪素において、n型の不純物としては窒素(N)やリン(P)を、p型の不純物としてはアルミニウム(Al)やホウ素(B)を用いることができる。
上述した実施の形態1にかかる炭化珪素半導体装置においては、メサ側面の傾斜角度、メサ部分の低ドーピング領域4と高ドーピング領域5の界面(以後、高周波界面と呼ぶ。)の傾斜角度、およびメサ部の低ドーピング領域4とドリフト層2の界面(以後、低周波界面と呼ぶ。)の傾斜角度がほぼ一致する例を説明したが、本実施の形態にかかる炭化珪素半導体装置では、メサ側面の傾斜角度、高周波界面の傾斜角度、および低周波界面の傾斜角度が異なる炭化珪素半導体装置について説明する。その他の点については、実施の形態1と同様であるので、詳しい説明は省略する。
図11において、メサ部はアノード層3表面に対して垂直に形成されている。これに対して、本実施の形態1のSiC−pn接合ダイオードの高周波界面および低周波界面は、メサ部において、アノード層3表面に対して斜めに形成されており、アノード層3表面に対する成す角度は、10度以上、80度以下である。
本実施の形態においては、メサ構造を形成する前に低ドーピング領域4をイオン注入し、その後、エッチングなどによりメサ構造を形成する。低ドーピング領域4のイオン注入は、炭化珪素半導体基板1を含むその段階のウエハー状態の基板を回転させて素子表面に対して斜め方向からイオン注入するなどの方法により形成する。より細やかな注入イオン分布の制御のために、イオン注入は複数回に分けて行なってもよく、複数のマスクを用いても良い。また、低ドーピング領域4とドリフト層2の界面の角度は、イオン注入の方向を調整することによって調整することができる。高ドーピング領域5もこの段階で行なってもよい。
このように、低ドーピング領域4形成後に所定の形状のレジストマスク越しにRIEなどのエッチングを行なうことにより、メサ側面をアノード層表面に対して垂直または任意の角度の斜めに形成できる。
また、pn接合ダイオードについて例示して説明するため、便宜上、pn接合を形成するp型領域をアノード層、n型領域をドリフト層と呼んで説明したが、各領域の名称は適宜変更されてもよい。
Claims (13)
- 第1導電型の炭化珪素半導体基板と、
前記炭化珪素半導体基板上に形成された第1導電型のドリフト層と、
前記ドリフト層上に形成された第2導電型のアノード層と、
外周部が平坦なメサ底面を成し、前記アノード層から前記ドリフト層に至る断面の側面が前記アノード層の表面に対して斜めに形成されたメサ側面を有するメサ構造と、
前記アノード層の端部から前記メサ底面にまで前記メサ側面を含むように、前記ドリフト層との界面の断面が前記アノード層の表面に対して斜めになるように形成された第2導電型の低ドーピング領域と、
前記アノード層の端部に接する前記低ドーピング領域内の前記メサ側面側の領域および前記メサ側面の下部で前記メサ底面につながる箇所に形成された、前記低ドーピング領域より第2導電型不純物の不純物濃度が高い、前記アノード層に接する第2導電型の高ドーピング領域と
を備えことを特徴とする炭化珪素半導体装置。 - スイッチング時のdV/dtが1kV/μs以上である請求項1に記載の炭化珪素半導体装置。
- 前記高ドーピング領域の第2導電型不純物濃度が、前記低ドーピング領域の第2導電型不純物濃度の2倍以上である請求項2に記載の炭化珪素半導体装置。
- スイッチング時のdV/dtが10kV/μs以上である請求項2に記載の炭化珪素半導体装置。
- 前記高ドーピング領域の第2導電型不純物濃度が前記低ドーピング領域の第2導電型不純物濃度よりも一桁以上高い請求項4に記載の炭化珪素半導体装置。
- 前記アノード層と前記低ドーピング領域と前記高ドーピング領域との第2導電型不純物は、アルミニウムまたはホウ素である請求項1ないし5のいずれか1項に記載の炭化珪素半導体装置。
- 前記メサ側面が前記アノード層の表面に対して成す角度が10度以上80度以下であることを特徴とする請求項1ないし6のいずれか1項に記載の炭化珪素半導体装置。
- 前記ドリフト層と低ドーピング領域との界面が前記アノード層の表面に対して成す角度が10度以上80度以下であることを特徴とする請求項7に記載の炭化珪素半導体装置。
- 前記高ドーピング領域の不純物濃度が前記アノード層の不純物濃度よりも低いことを特徴とする請求項1ないし8のいずれか1項に記載の炭化珪素半導体装置。
- 前記アノード層の端部に接する前記低ドーピング領域内の前記メサ側面側の領域および前記メサ側面の下部でメサ底面につながる箇所を含む領域に形成された前記高ドーピング領域がつながっていることを特徴とする請求項1ないし9のいずれか1項に記載の炭化珪素半導体装置。
- 前記アノード層の端部に接する前記低ドーピング領域内の前記メサ側面側の領域および前記メサ側面の下部でメサ底面につながる箇所を含む領域に形成された前記高ドーピング領域が分離していることを特徴とする請求項1ないし9のいずれか1項に記載の炭化珪素半導体装置。
- 前記メサ側面が前記アノード層表面に対して成す角度と前記ドリフト層と低ドーピング領域との界面が前記アノード層の表面に対して成す角度とが異なることを特徴とする請求項1ないし11のいずれか1項に記載の炭化珪素半導体装置。
- 第1導電型の炭化珪素半導体基板と、
前記炭化珪素半導体基板上に形成された第1導電型のドリフト層と、
前記ドリフト層上に形成された第2導電型のアノード層と、
外周部が平坦なメサ底面を成し、前記アノード層から前記ドリフト層に至る断面の側面が前記アノード層の表面に対して垂直に形成されたメサ側面を有するメサ構造と、
前記アノード層の端部から前記メサ底面にまで前記メサ側面を含むように、前記ドリフト層との界面の断面が前記アノード層の表面に対して斜めになるように形成された第2導電型の低ドーピング領域と
前記アノード層の端部に接する前記低ドーピング領域内の前記メサ側面側の領域および前記メサ側面の下部で前記メサ底面につながる箇所に形成された、前記低ドーピング領域より第2導電型不純物濃度が高い、第2導電型の高ドーピング領域と
を備えたことを特徴とする炭化珪素半導体装置。
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