JP6272850B2 - 物理的気相成長法による窒化アルミニウムの緩衝及び活性層 - Google Patents
物理的気相成長法による窒化アルミニウムの緩衝及び活性層 Download PDFInfo
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- JP6272850B2 JP6272850B2 JP2015520613A JP2015520613A JP6272850B2 JP 6272850 B2 JP6272850 B2 JP 6272850B2 JP 2015520613 A JP2015520613 A JP 2015520613A JP 2015520613 A JP2015520613 A JP 2015520613A JP 6272850 B2 JP6272850 B2 JP 6272850B2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Description
Claims (16)
- デバイスを製造するための方法であって:
第1の処理チャンバの中の1以上の基板のうちの1つの表面を処理すること;
制御された環境において前記第1の処理チャンバから第2の処理チャンバに、前記1以上の基板を移送すること;及び
処理領域を画定する1以上の壁を有する前記第2の処理チャンバの中の前記1以上の基板上にN極性を有する結晶性の窒化アルミニウムの層を形成することを含み、前記窒化アルミニウムの層を形成することは:
前記処理領域と接触する表面を有し、アルミニウムを含むターゲットにバイアスをかけること;
窒素を含む第1のガスを前記処理領域の中に流すこと;及び
アルゴン、クリプトン、又はネオンを含む第2のガスを前記処理領域の中に流すことを含む、方法。 - 前記窒化アルミニウムの層を形成することはさらに、基板支持体の上に配置される前記1以上の基板上に負極性の基板バイアス電位を生成するために、電極にバイアスをかけることを含む、請求項1に記載の方法。
- 前記電極にバイアスをかけることは、前記ターゲットにバイアスをかける前に生じる第1の期間において前記電極にバイアスをかけることを含む、請求項2に記載の方法。
- 前記電極にバイアスをかけることは、前記1以上の基板上において、+5ボルトから+500ボルトの間で変化する前記電極と前記ターゲットとの間の浮遊電位を生成することを含む、請求項2に記載の方法。
- 前記1以上の基板のうちの前記1つの表面を処理することは、前記1以上の基板を脱気すること、又は前記1以上の基板のうちの前記1つの表面をスパッタエッチングすることを含み、
前記ターゲットにバイアスをかけることは、1500キロワットから2500キロワットの間の電力において、パルス状のDC信号及びRF信号を送ることを含み、かつ
前記電極にバイアスをかけることは、前記1以上の基板上において、+5ボルトから+500ボルトの間から変化する浮遊電位を生成することを含み、かつ前記方法はさらに:
前記ターゲットにバイアスをかける前に、前記1以上の基板を摂氏200度から摂氏1000度の間の温度まで加熱すること;
前記ターゲットにバイアスをかけている間の前記処理領域内で、0.1ミリトールから200ミリトールの間で圧力を制御すること;及び
0.2オングストローム/秒から0.5オングストローム/秒の間の堆積速度において、AlN層を堆積することを含む、請求項2に記載の方法。 - 前記電極にバイアスをかけることは、前記ターゲットにバイアスをかけている間に、前記1以上の基板上に浮遊電位を生成することを含む、請求項2に記載の方法。
- 前記第2の処理チャンバから、第3の処理チャンバに、前記1以上の基板を移送すること;及び
前記第3の処理チャンバの中の前記窒化アルミニウムの層の上に、III族‐窒化物の層を形成することをさらに含み、前記III族‐窒化物の層を形成することは:
金属を含む前駆体及び窒素を含むガスを、前記1以上の基板の各々の表面に送ることを含む、請求項1に記載の方法。 - 前記III族‐窒化物の層は、AlN、InN、GaN、AlGaN、InGaN、又はInAlGaNを備える、請求項7に記載の方法。
- 前記ターゲットはさらに、アルミニウム、及びII族、IV族、又はVI族の要素を含む、請求項1に記載の方法。
- デバイスを製造するための方法であって:
第1の処理チャンバの中の1以上の基板のうちの1つの表面を処理すること;
制御された環境において前記第1の処理チャンバから第2の処理チャンバに、前記1以上の基板を移送すること;及び
処理領域を画定する1以上の壁を有する前記第2の処理チャンバの中の前記1以上の基板上にAl極性を有する結晶性の窒化アルミニウムの層を形成することを含み、パルス状のDC電力信号を供給し、前記窒化アルミニウムの層を形成することは:
前記処理領域と接触する表面を有するアルミニウムを含むターゲットにバイアスをかけること;
窒素を含む第1のガスを前記処理領域の中に流すこと;及び
アルゴン、クリプトン、又はネオンを含む第2のガスを前記処理領域の中に流すことを含む、方法。 - 前記窒化アルミニウムの層を形成することはさらに、基板支持体の上に配置される前記1以上の基板上に負極性の基板バイアス電位を生成するために、電極にバイアスをかけることを含む、請求項10に記載の方法。
- 前記電極にバイアスをかけることは、前記ターゲットにバイアスをかける前に生じる第1の期間において前記電極にバイアスをかけることを含む、請求項11に記載の方法。
- 前記電極にバイアスをかけることは、前記1以上の基板上において、−300ボルトから−1ボルトの間で変化する前記電極と前記ターゲットとの間の浮遊電位を生成することを含む、請求項11に記載の方法。
- 前記1以上の基板のうちの前記1つの表面を処理することは、前記1以上の基板を脱気すること、又は前記1以上の基板のうちの前記1つの表面をスパッタエッチングすることを含み、
前記ターゲットにバイアスをかけることは、4kワットから6kワットの間の電力において、パルス状のDC信号を送ることを含み、かつ
前記電極にバイアスをかけることは、前記1以上の基板上において、−300ボルトから−1ボルトの間から変化する浮遊電位を生成することを含み、かつ前記方法はさらに、
前記ターゲットにバイアスをかける前に、前記1以上の基板を摂氏200度から摂氏1000度の間の温度まで加熱すること;
前記ターゲットにバイアスをかけている間の前記処理領域内で、0.1ミリトールから200ミリトールの間で圧力を制御すること;及び
7オングストローム/秒から20オングストローム/秒の間の堆積速度において、AlN層を堆積することを含む、請求項11に記載の方法。 - 前記第2の処理チャンバから、第3の処理チャンバに、前記1以上の基板を移送すること;及び
前記第3の処理チャンバの中の前記窒化アルミニウムの層の上に、III族‐窒化物の層を形成することを含み、前記III族‐窒化物の層を形成することは:
金属を含む前駆体及び窒素を含むガスを、前記1以上の基板の各々の表面に送ることを含む、請求項10に記載の方法。 - デバイスを形成するための装置であって:
アルミニウムを含むターゲット;
窒素を含むガス源;
アルゴン、クリプトン、及びネオンから成るグループから選ばれるガスを送るように適合されるプロセスガス源;
前記ターゲットに対して、500ワットから20キロワットの間の電力において、パルス状のDC信号又はRF信号を提供するように構成される第1の電源;
基板を支持する表面を有する基板支持体に結合される電極;及び
前記基板を支持する表面の上に配置される1以上の基板上に、−300ボルトから−1ボルトの間であって、前記電極と前記ターゲットとの間に浮遊電位を生成するように構成され、かつ、前記電極と電気的に接続した第2の電源を備える、第1の処理チャンバを備える、第1のクラスタを備える、装置。
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US61/683,652 | 2012-08-15 | ||
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JP2015529009A (ja) | 2015-10-01 |
CN107354428B (zh) | 2020-10-20 |
KR20150022006A (ko) | 2015-03-03 |
WO2014008162A1 (en) | 2014-01-09 |
CN107354428A (zh) | 2017-11-17 |
KR102168043B1 (ko) | 2020-10-20 |
KR102317822B1 (ko) | 2021-10-25 |
CN104428441A (zh) | 2015-03-18 |
US20150348773A1 (en) | 2015-12-03 |
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