JP6234271B2 - 被処理体を処理する方法 - Google Patents
被処理体を処理する方法 Download PDFInfo
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- JP6234271B2 JP6234271B2 JP2014034050A JP2014034050A JP6234271B2 JP 6234271 B2 JP6234271 B2 JP 6234271B2 JP 2014034050 A JP2014034050 A JP 2014034050A JP 2014034050 A JP2014034050 A JP 2014034050A JP 6234271 B2 JP6234271 B2 JP 6234271B2
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- 238000000034 method Methods 0.000 title claims description 76
- 239000007789 gas Substances 0.000 claims description 80
- 229920000620 organic polymer Polymers 0.000 claims description 46
- 229920001400 block copolymer Polymers 0.000 claims description 24
- 229920000642 polymer Polymers 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 16
- 230000007935 neutral effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004793 Polystyrene Substances 0.000 claims description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims description 12
- 229920002223 polystyrene Polymers 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 8
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229920005604 random copolymer Polymers 0.000 claims description 3
- 229920005553 polystyrene-acrylate Polymers 0.000 claims 1
- 239000000463 material Substances 0.000 description 11
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 238000001338 self-assembly Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (2)
- 被処理体を処理する方法であって、
プラズマ処理装置の処理容器内に設けられた静電チャックに対して被処理体を静電吸着する第1工程であり、該被処理体は、シリコンを含有する基板、該基板上に設けられた被エッチング層、該被エッチング層上に設けられた有機ポリマー層、及び、該有機ポリマー層上にレジストマスクを有する、該第1工程と、
前記レジストマスクを介して前記有機ポリマー層をエッチングするよう、前記処理容器内において発生させた第1のガスのプラズマに前記被処理体を晒す第2工程と、
前記第2工程の後、前記処理容器内において第2のガスのプラズマを生成しつつ前記静電チャックから前記被処理体を脱着する第3工程と、
前記第3工程の後、前記レジストマスクを剥離する第4工程と、
前記第4工程の後、前記有機ポリマー層の開口内、且つ、前記被エッチング層上に中性膜を形成する工程と、
中性膜を形成する前記工程の後、前記有機ポリマー層及び前記中性膜の上に、第1のポリマー及び第2のポリマーを含み自己組織化可能なブロック・コポリマー層を形成する第5工程と、
前記ブロック・コポリマー層に前記第1のポリマーを含む第1の領域及び前記第2のポリマーを含む第2の領域を形成するよう前記被処理体を処理する第6工程と、
前記第6工程の後、前記プラズマ処理装置を用いて前記第2の領域及び該第2の領域の直下の前記中性膜をエッチングする第7工程と、
を含み、
前記第2のガスは、酸素ガス、又は、アルゴンガスよりも原子量の小さい希ガスと酸素ガスとの混合ガスである、
方法。 - 前記有機ポリマー層は、ポリスチレン、又はポリスチレンとポリメチルメタクリレートとのランダム共重合体を含む、
請求項1に記載の方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014034050A JP6234271B2 (ja) | 2014-02-25 | 2014-02-25 | 被処理体を処理する方法 |
PCT/JP2015/051029 WO2015129322A1 (ja) | 2014-02-25 | 2015-01-16 | 被処理体を処理する方法 |
KR1020167019960A KR102330411B1 (ko) | 2014-02-25 | 2015-01-16 | 피처리체를 처리하는 방법 |
US15/117,052 US9911621B2 (en) | 2014-02-25 | 2015-01-16 | Method for processing target object |
SG11201606375QA SG11201606375QA (en) | 2014-02-25 | 2015-01-16 | Method for processing article |
TW104105529A TWI628711B (zh) | 2014-02-25 | 2015-02-17 | 被處理體之處理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014034050A JP6234271B2 (ja) | 2014-02-25 | 2014-02-25 | 被処理体を処理する方法 |
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JP2015159233A JP2015159233A (ja) | 2015-09-03 |
JP6234271B2 true JP6234271B2 (ja) | 2017-11-22 |
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JP2014034050A Active JP6234271B2 (ja) | 2014-02-25 | 2014-02-25 | 被処理体を処理する方法 |
Country Status (6)
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---|---|
US (1) | US9911621B2 (ja) |
JP (1) | JP6234271B2 (ja) |
KR (1) | KR102330411B1 (ja) |
SG (1) | SG11201606375QA (ja) |
TW (1) | TWI628711B (ja) |
WO (1) | WO2015129322A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102651697B1 (ko) * | 2015-09-07 | 2024-03-27 | 아이엠이씨 브이제트더블유 | 트렌치 보조 케모에피탁시(trac) dsa 흐름 |
JP6346132B2 (ja) * | 2015-09-11 | 2018-06-20 | 株式会社東芝 | パターン形成方法 |
WO2018044727A1 (en) * | 2016-08-29 | 2018-03-08 | Tokyo Electron Limited | Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures |
JP6822561B2 (ja) | 2016-11-30 | 2021-01-27 | エルジー・ケム・リミテッド | 積層体 |
JP6458174B1 (ja) | 2018-01-12 | 2019-01-23 | デクセリアルズ株式会社 | パターン形成方法及び偏光板の製造方法 |
JP7389845B2 (ja) | 2022-04-18 | 2023-11-30 | セメス カンパニー,リミテッド | 基板処理装置 |
Family Cites Families (21)
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JPH08279487A (ja) * | 1993-05-20 | 1996-10-22 | Hitachi Ltd | プラズマ処理方法 |
JP3360404B2 (ja) | 1994-04-01 | 2002-12-24 | ソニー株式会社 | プラズマエッチング方法 |
US5869401A (en) * | 1996-12-20 | 1999-02-09 | Lam Research Corporation | Plasma-enhanced flash process |
US6872322B1 (en) * | 1997-11-12 | 2005-03-29 | Applied Materials, Inc. | Multiple stage process for cleaning process chambers |
TW527646B (en) * | 2001-07-24 | 2003-04-11 | United Microelectronics Corp | Method for pre-cleaning residual polymer |
JP2004014868A (ja) * | 2002-06-07 | 2004-01-15 | Tokyo Electron Ltd | 静電チャック及び処理装置 |
US20030236004A1 (en) * | 2002-06-24 | 2003-12-25 | Applied Materials, Inc. | Dechucking with N2/O2 plasma |
US20050066994A1 (en) * | 2003-09-30 | 2005-03-31 | Biles Peter John | Methods for cleaning processing chambers |
JP2007027816A (ja) * | 2005-07-12 | 2007-02-01 | Ricoh Co Ltd | 符号化処理装置および方法、並びにプログラムおよび記録媒体 |
EP2034296B1 (en) * | 2007-09-07 | 2012-09-26 | Imec | Quantification of hydrophobic and hydrophilic properties of materials |
JP2010040822A (ja) * | 2008-08-06 | 2010-02-18 | Tokyo Electron Ltd | 静電吸着装置の除電処理方法、基板処理装置、及び記憶媒体 |
US8525139B2 (en) * | 2009-10-27 | 2013-09-03 | Lam Research Corporation | Method and apparatus of halogen removal |
JP5284300B2 (ja) | 2010-03-10 | 2013-09-11 | 株式会社東芝 | 半導体発光素子、およびそれを用いた照明装置、ならびに半導体発光素子の製造方法 |
US10538859B2 (en) * | 2010-12-23 | 2020-01-21 | Asml Netherlands B.V. | Methods for providing patterned orientation templates for self-assemblable polymers for use in device lithography |
US8832916B2 (en) * | 2011-07-12 | 2014-09-16 | Lam Research Corporation | Methods of dechucking and system thereof |
US8691925B2 (en) * | 2011-09-23 | 2014-04-08 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions of neutral layer for directed self assembly block copolymers and processes thereof |
JP2013201356A (ja) * | 2012-03-26 | 2013-10-03 | Toshiba Corp | 露光方法及びパターン形成方法 |
JP5973763B2 (ja) | 2012-03-28 | 2016-08-23 | 東京エレクトロン株式会社 | 自己組織化可能なブロック・コポリマーを用いて周期パターン形成する方法及び装置 |
JP2014027228A (ja) * | 2012-07-30 | 2014-02-06 | Tokyo Electron Ltd | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
US9147574B2 (en) * | 2013-03-14 | 2015-09-29 | Tokyo Electron Limited | Topography minimization of neutral layer overcoats in directed self-assembly applications |
US8975009B2 (en) * | 2013-03-14 | 2015-03-10 | Tokyo Electron Limited | Track processing to remove organic films in directed self-assembly chemo-epitaxy applications |
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2014
- 2014-02-25 JP JP2014034050A patent/JP6234271B2/ja active Active
-
2015
- 2015-01-16 US US15/117,052 patent/US9911621B2/en active Active
- 2015-01-16 SG SG11201606375QA patent/SG11201606375QA/en unknown
- 2015-01-16 KR KR1020167019960A patent/KR102330411B1/ko active IP Right Grant
- 2015-01-16 WO PCT/JP2015/051029 patent/WO2015129322A1/ja active Application Filing
- 2015-02-17 TW TW104105529A patent/TWI628711B/zh active
Also Published As
Publication number | Publication date |
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TWI628711B (zh) | 2018-07-01 |
TW201539572A (zh) | 2015-10-16 |
US9911621B2 (en) | 2018-03-06 |
WO2015129322A1 (ja) | 2015-09-03 |
KR102330411B1 (ko) | 2021-11-23 |
JP2015159233A (ja) | 2015-09-03 |
SG11201606375QA (en) | 2016-09-29 |
KR20160125950A (ko) | 2016-11-01 |
US20170148641A1 (en) | 2017-05-25 |
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