JP6200635B2 - 広帯域バラン構体 - Google Patents
広帯域バラン構体 Download PDFInfo
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- JP6200635B2 JP6200635B2 JP2012160552A JP2012160552A JP6200635B2 JP 6200635 B2 JP6200635 B2 JP 6200635B2 JP 2012160552 A JP2012160552 A JP 2012160552A JP 2012160552 A JP2012160552 A JP 2012160552A JP 6200635 B2 JP6200635 B2 JP 6200635B2
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- balun
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- 230000004044 response Effects 0.000 claims description 43
- 230000010363 phase shift Effects 0.000 claims description 32
- 238000007493 shaping process Methods 0.000 claims description 25
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000001052 transient effect Effects 0.000 description 22
- 239000000523 sample Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 230000000630 rising effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000002500 effect on skin Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/184—Strip line phase-shifters
Landscapes
- Measuring Leads Or Probes (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Dc Digital Transmission (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Description
正極性差動信号用の第1信号パス及び負極性差動信号用の第2信号パスと、
第1ポートで上記正極性差動信号を受けるように上記第1信号パスに結合されると共に、第3ポートで上記負極性差動信号を受けるように第2信号パスに結合される90度ハイブリッドであって、該90度ハイブリッドの第2ポートは上記第1ポートに結合されて出力ポートとして機能し、上記90度ハイブリッドの第4ポートは上記第3ポートに結合されると共に終端抵抗を介してグランドに結合される上記90度ハイブリッドと、
上記出力ポートに結合される信号ケーブルとを具え、
上記信号ケーブルによる信号損失を補償し、DCから少なくとも15GHzまでの周波数帯域を提供し、過渡応答のプレ・シュートを10パーセント未満に抑えるために、上記第1信号パスは1次位相整形回路を有し、上記第2信号パスは2次位相整形回路を有することを特徴としている。
12 入力回路
14 バラン
16 出力回路
20 信号取込みプローブ・システム
22 被試験デバイス
24 プロービング・ヘッド
26 増幅回路
28 バラン
30 ケーブル
40 広帯域バラン
42 絶縁基板
44 第1信号パス
46 第2信号パス
48 回路トレース
50 1次位相整形回路
52 90度ハイブリッド
54 位相サークル
56 回路トレース
58 2次位相整形回路
60 終端抵抗
62 位相サークル
72 ビア
74 入力パッド
Claims (1)
- 正極性差動信号用の第1信号パス及び負極性差動信号用の第2信号パスと、
第1ポートで上記正極性差動信号を受けるように上記第1信号パスに結合されると共に、第3ポートで上記負極性差動信号を受けるように第2信号パスに結合される90度ハイブリッドであって、該90度ハイブリッドの第2ポートは上記第1ポートに結合されて出力ポートとして機能し、上記90度ハイブリッドの第4ポートは上記第3ポートに結合されると共に終端抵抗を介してグランドに結合される上記90度ハイブリッドと、
上記第1信号パス又は上記第2信号パスに設けられ、上記第1ポートにおける上記正極性差動信号と上記第3ポートにおける上記負極性差動信号との間の位相差を上記90度ハイブリッドの中心周波数において90度とするように、上記正極性差動信号又は上記負極性差動信号の位相をシフトする位相シフト・ネットワークであって、上記90度ハイブリッドの上記第1及び第2ポート間線路と上記第3及び第4ポート間線路との間の分布結合の位相応答を補償するように分布結合された線路による位相整形回路を有する上記位相シフト・ネットワークと、
上記出力ポートに結合される信号ケーブルとを具え、
上記信号ケーブルによる信号損失を補償することを特徴とする広帯域バラン構体。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161509365P | 2011-07-19 | 2011-07-19 | |
US61/509,365 | 2011-07-19 | ||
US13/341,916 | 2011-12-31 | ||
US13/341,916 US8611436B2 (en) | 2011-07-19 | 2011-12-31 | Wideband balun structure |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013027048A JP2013027048A (ja) | 2013-02-04 |
JP6200635B2 true JP6200635B2 (ja) | 2017-09-20 |
Family
ID=47074571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012160552A Active JP6200635B2 (ja) | 2011-07-19 | 2012-07-19 | 広帯域バラン構体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8611436B2 (ja) |
EP (1) | EP2549584B1 (ja) |
JP (1) | JP6200635B2 (ja) |
KR (1) | KR101911019B1 (ja) |
CN (1) | CN102891676B (ja) |
TW (1) | TWI552523B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9634639B2 (en) * | 2015-09-10 | 2017-04-25 | Harris Corporation | Tunable electronic circuit which converts balanced signals to unbalanced signals |
CN108900172B (zh) * | 2018-06-05 | 2021-09-28 | 东南大学 | 一种宽带单端输入高精度正交差分输出信号产生电路 |
US10886588B2 (en) | 2018-09-26 | 2021-01-05 | Keysight Technologies, Inc. | High dynamic range probe using pole-zero cancellation |
CN109546987B (zh) * | 2018-11-16 | 2021-09-03 | 西安电子科技大学 | 宽带有源移相器 |
WO2024051947A1 (en) * | 2022-09-08 | 2024-03-14 | Alcan Systems Gmbh | Radio frequency device |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61205002A (ja) * | 1985-03-08 | 1986-09-11 | Nec Corp | 電力分配器 |
US5148130A (en) * | 1990-06-07 | 1992-09-15 | Dietrich James L | Wideband microstrip UHF balun |
US5345471A (en) * | 1993-04-12 | 1994-09-06 | The Regents Of The University Of California | Ultra-wideband receiver |
US5764195A (en) * | 1996-07-24 | 1998-06-09 | Hazeltine Corporation | UHF/VHF multifunction ocean antenna system |
US5945890A (en) * | 1997-06-16 | 1999-08-31 | The United States Of America As Represented By The Secretary Of The Army | Ultra-wide bandwidth field stacking balun |
US6140886A (en) * | 1999-02-25 | 2000-10-31 | Lucent Technologies, Inc. | Wideband balun for wireless and RF application |
US6292070B1 (en) * | 1999-03-11 | 2001-09-18 | Anaren Microwave, Inc. | Balun formed from symmetrical couplers and method for making same |
US7356077B2 (en) * | 2001-09-07 | 2008-04-08 | Spirent Communications Inc. | Method and apparatus for testing network integrity |
US6982609B1 (en) * | 2002-05-15 | 2006-01-03 | Zeevo | System method and apparatus for a three-line balun with power amplifier bias |
US6844792B1 (en) * | 2002-05-15 | 2005-01-18 | Zeevo | Single ended tuning of a differential power amplifier output |
US6946880B2 (en) * | 2003-03-27 | 2005-09-20 | Raytheon Company | Compact balun for rejecting common mode electromagnetic fields |
US20050084033A1 (en) * | 2003-08-04 | 2005-04-21 | Lowell Rosen | Scalable transform wideband holographic communications apparatus and methods |
JP2005176334A (ja) * | 2003-11-17 | 2005-06-30 | Mitsubishi Electric Corp | バラン回路 |
US7068122B2 (en) * | 2004-09-28 | 2006-06-27 | Industrial Technology Research Institute | Miniaturized multi-layer balun |
US7567142B2 (en) * | 2005-06-24 | 2009-07-28 | Atheros Communications, Inc. | Quasi-balun |
WO2008016138A1 (en) * | 2006-08-03 | 2008-02-07 | Panasonic Corporation | Antenna apparatus |
US7795889B2 (en) * | 2008-01-25 | 2010-09-14 | Infineon Technologies Ag | Probe device |
JP2009260444A (ja) * | 2008-04-11 | 2009-11-05 | Toshiba Corp | 合成器、増幅器、送信機 |
US7961048B2 (en) * | 2008-12-12 | 2011-06-14 | Samsung Electro-Mechanics Company | Integrated power amplifiers for use in wireless communication devices |
US8125270B2 (en) * | 2009-05-11 | 2012-02-28 | The Board Of Trustees Of The Leland Stanford Junior University | Frequency offset Cartesian feedback system |
CN102710219B (zh) * | 2012-05-25 | 2014-11-26 | 姜鑫 | 一种无源三平衡变频器 |
-
2011
- 2011-12-31 US US13/341,916 patent/US8611436B2/en active Active
-
2012
- 2012-07-12 TW TW101125097A patent/TWI552523B/zh active
- 2012-07-17 CN CN201210246902.4A patent/CN102891676B/zh active Active
- 2012-07-18 KR KR1020120078212A patent/KR101911019B1/ko active IP Right Grant
- 2012-07-18 EP EP12176962.4A patent/EP2549584B1/en active Active
- 2012-07-19 JP JP2012160552A patent/JP6200635B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR101911019B1 (ko) | 2018-12-19 |
CN102891676A (zh) | 2013-01-23 |
US8611436B2 (en) | 2013-12-17 |
CN102891676B (zh) | 2017-04-12 |
EP2549584B1 (en) | 2016-10-26 |
TWI552523B (zh) | 2016-10-01 |
JP2013027048A (ja) | 2013-02-04 |
EP2549584A3 (en) | 2013-04-17 |
US20130022133A1 (en) | 2013-01-24 |
TW201325080A (zh) | 2013-06-16 |
KR20130010863A (ko) | 2013-01-29 |
EP2549584A2 (en) | 2013-01-23 |
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