JP6196920B2 - グラフェン加工方法 - Google Patents
グラフェン加工方法 Download PDFInfo
- Publication number
- JP6196920B2 JP6196920B2 JP2014043828A JP2014043828A JP6196920B2 JP 6196920 B2 JP6196920 B2 JP 6196920B2 JP 2014043828 A JP2014043828 A JP 2014043828A JP 2014043828 A JP2014043828 A JP 2014043828A JP 6196920 B2 JP6196920 B2 JP 6196920B2
- Authority
- JP
- Japan
- Prior art keywords
- graphene
- gas
- gcb
- cluster
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/06—Graphene nanoribbons
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/22—Electronic properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
- H01J2237/0245—Moving whole optical system relatively to object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3151—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Carbon And Carbon Compounds (AREA)
- Drying Of Semiconductors (AREA)
Description
29 ガスクラスター
43 グラフェン
44 GCB
Claims (8)
- グラフェンへGCBを照射し、
前記照射されるGCBに含まれるガス分子のクラスターのエネルギーを0.3〜0.5eV/クラスターに制御して前記グラフェンの端部においてアームチェアエッジを選択的に形成することを特徴とするグラフェンの加工方法。 - 前記グラフェンをマスク膜で覆わないことを特徴とする請求項1記載のグラフェンの加工方法。
- 前記GCBは常温以下で不活性となる単ガス又は混合ガスから生成されることを特徴とする請求項1記載のグラフェンの加工方法。
- 前記ガス分子のクラスターのエネルギーは、前記単ガス又は前記混合ガスを構成するガス種、各ガス種の組み合わせ、又は各ガス種の流量比を変更することによって制御されることを特徴とする請求項1乃至3のいずれか1項に記載のグラフェンの加工方法。
- 前記ガス分子は二酸化炭素分子及びヘリウム分子を含むことを特徴とする請求項1乃至4のいずれか1項に記載のグラフェンの加工方法。
- 前記ガス分子は四フッ化炭素ガス分子及びヘリウム分子を含むことを特徴とする請求項1乃至4のいずれか1項に記載のグラフェンの加工方法。
- 前記ガス分子は六フッ化硫黄ガス分子及びヘリウム分子を含むことを特徴とする請求項1乃至4のいずれか1項に記載のグラフェンの加工方法。
- グラフェンへGCBを照射し、
前記照射されるGCBに含まれるガス分子のクラスターのエネルギーを0.3〜0.5eV/クラスターに制御し、
前記GCBを照射した後の前記グラフェンの端部の表面の性状をラマン分光法によって分析した際、Gバンドの散乱光は発生せず、Dバンドの散乱光が発生することを特徴とするグラフェンの加工方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014043828A JP6196920B2 (ja) | 2014-03-06 | 2014-03-06 | グラフェン加工方法 |
KR1020150025782A KR20150105208A (ko) | 2014-03-06 | 2015-02-24 | 그래핀의 가공 방법 |
US14/634,948 US20150251913A1 (en) | 2014-03-06 | 2015-03-02 | Graphene machining method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014043828A JP6196920B2 (ja) | 2014-03-06 | 2014-03-06 | グラフェン加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015168593A JP2015168593A (ja) | 2015-09-28 |
JP6196920B2 true JP6196920B2 (ja) | 2017-09-13 |
Family
ID=54016684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014043828A Expired - Fee Related JP6196920B2 (ja) | 2014-03-06 | 2014-03-06 | グラフェン加工方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20150251913A1 (ja) |
JP (1) | JP6196920B2 (ja) |
KR (1) | KR20150105208A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6596340B2 (ja) * | 2016-01-21 | 2019-10-23 | 東京エレクトロン株式会社 | 基板洗浄方法および基板洗浄装置 |
JP2018127369A (ja) * | 2017-02-06 | 2018-08-16 | 東京エレクトロン株式会社 | グラフェンの異方性エッチング方法 |
US11450506B2 (en) * | 2020-04-24 | 2022-09-20 | Tel Manufacturing And Engineering Of America, Inc. | Pattern enhancement using a gas cluster ion beam |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3647507B2 (ja) * | 1995-05-19 | 2005-05-11 | 独立行政法人科学技術振興機構 | ガスクラスターおよびガスクラスターイオンの 形成方法 |
JP5575648B2 (ja) * | 2008-08-18 | 2014-08-20 | 岩谷産業株式会社 | クラスタ噴射式加工方法 |
US8440578B2 (en) * | 2011-03-28 | 2013-05-14 | Tel Epion Inc. | GCIB process for reducing interfacial roughness following pre-amorphization |
JP2013012546A (ja) * | 2011-06-28 | 2013-01-17 | Toshiba Corp | 不揮発性記憶装置の製造方法 |
JP2013216510A (ja) * | 2012-04-05 | 2013-10-24 | Tokyo Electron Ltd | グラフェンの加工方法 |
JP5945178B2 (ja) * | 2012-07-04 | 2016-07-05 | 東京エレクトロン株式会社 | ガスクラスター照射機構およびそれを用いた基板処理装置、ならびにガスクラスター照射方法 |
-
2014
- 2014-03-06 JP JP2014043828A patent/JP6196920B2/ja not_active Expired - Fee Related
-
2015
- 2015-02-24 KR KR1020150025782A patent/KR20150105208A/ko unknown
- 2015-03-02 US US14/634,948 patent/US20150251913A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20150251913A1 (en) | 2015-09-10 |
KR20150105208A (ko) | 2015-09-16 |
JP2015168593A (ja) | 2015-09-28 |
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