JP6189758B2 - チタン含有レジスト下層膜形成用組成物及びパターン形成方法 - Google Patents
チタン含有レジスト下層膜形成用組成物及びパターン形成方法 Download PDFInfo
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- JP6189758B2 JP6189758B2 JP2014014302A JP2014014302A JP6189758B2 JP 6189758 B2 JP6189758 B2 JP 6189758B2 JP 2014014302 A JP2014014302 A JP 2014014302A JP 2014014302 A JP2014014302 A JP 2014014302A JP 6189758 B2 JP6189758 B2 JP 6189758B2
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- titanium
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- film
- underlayer film
- organic
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- 239000010936 titanium Substances 0.000 title claims description 167
- 229910052719 titanium Inorganic materials 0.000 title claims description 161
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims description 157
- 238000000034 method Methods 0.000 title claims description 98
- 239000000203 mixture Substances 0.000 title claims description 74
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 73
- 150000001875 compounds Chemical class 0.000 claims description 49
- 239000002904 solvent Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- -1 silane compound Chemical class 0.000 claims description 30
- 125000000962 organic group Chemical group 0.000 claims description 29
- 229910052799 carbon Inorganic materials 0.000 claims description 27
- 238000001312 dry etching Methods 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 238000009833 condensation Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 23
- 229910052733 gallium Inorganic materials 0.000 claims description 23
- 238000006460 hydrolysis reaction Methods 0.000 claims description 23
- 230000005494 condensation Effects 0.000 claims description 21
- 230000007062 hydrolysis Effects 0.000 claims description 20
- 150000003609 titanium compounds Chemical class 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 125000004432 carbon atom Chemical group C* 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052735 hafnium Inorganic materials 0.000 claims description 13
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000001459 lithography Methods 0.000 claims description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 10
- 229910052727 yttrium Inorganic materials 0.000 claims description 10
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 230000007261 regionalization Effects 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 150000004756 silanes Chemical class 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000001338 self-assembly Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000001127 nanoimprint lithography Methods 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 230000003796 beauty Effects 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 239000007859 condensation product Substances 0.000 claims 1
- 125000001650 tertiary alcohol group Chemical group 0.000 claims 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 71
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 66
- 239000003960 organic solvent Substances 0.000 description 62
- 239000000243 solution Substances 0.000 description 50
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 43
- 239000000178 monomer Substances 0.000 description 41
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 39
- 238000005530 etching Methods 0.000 description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 39
- 238000006243 chemical reaction Methods 0.000 description 38
- 239000002210 silicon-based material Substances 0.000 description 38
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 33
- 239000003054 catalyst Substances 0.000 description 32
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 30
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 30
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 27
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 24
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 24
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 21
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 21
- 239000007789 gas Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 17
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 17
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 15
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 15
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 15
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 15
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 15
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 15
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 15
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 15
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 15
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 14
- SKTCDJAMAYNROS-UHFFFAOYSA-N methoxycyclopentane Chemical compound COC1CCCC1 SKTCDJAMAYNROS-UHFFFAOYSA-N 0.000 description 14
- 238000000059 patterning Methods 0.000 description 14
- 238000003786 synthesis reaction Methods 0.000 description 14
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 13
- WDJHALXBUFZDSR-UHFFFAOYSA-M acetoacetate Chemical compound CC(=O)CC([O-])=O WDJHALXBUFZDSR-UHFFFAOYSA-M 0.000 description 13
- 239000003377 acid catalyst Substances 0.000 description 13
- 230000003301 hydrolyzing effect Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 12
- 239000004793 Polystyrene Substances 0.000 description 11
- 238000011161 development Methods 0.000 description 11
- 230000018109 developmental process Effects 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 229920002223 polystyrene Polymers 0.000 description 11
- 239000011541 reaction mixture Substances 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000006482 condensation reaction Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 150000003509 tertiary alcohols Chemical group 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 9
- HMNZROFMBSUMAB-UHFFFAOYSA-N 1-ethoxybutan-1-ol Chemical compound CCCC(O)OCC HMNZROFMBSUMAB-UHFFFAOYSA-N 0.000 description 9
- APFRUMUZEFOCFO-UHFFFAOYSA-N 1-methoxybutan-1-ol Chemical compound CCCC(O)OC APFRUMUZEFOCFO-UHFFFAOYSA-N 0.000 description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 9
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000005406 washing Methods 0.000 description 9
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- YYVRSUMXFIIYRW-UHFFFAOYSA-N 1-propoxybutan-1-ol Chemical compound CCCOC(O)CCC YYVRSUMXFIIYRW-UHFFFAOYSA-N 0.000 description 7
- GQCZPFJGIXHZMB-UHFFFAOYSA-N 1-tert-Butoxy-2-propanol Chemical compound CC(O)COC(C)(C)C GQCZPFJGIXHZMB-UHFFFAOYSA-N 0.000 description 7
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 7
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 7
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 7
- 238000004132 cross linking Methods 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 7
- 229940117360 ethyl pyruvate Drugs 0.000 description 7
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 7
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 7
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 7
- 238000006386 neutralization reaction Methods 0.000 description 7
- 229960004063 propylene glycol Drugs 0.000 description 7
- 235000013772 propylene glycol Nutrition 0.000 description 7
- WMOVHXAZOJBABW-UHFFFAOYSA-N tert-butyl acetate Chemical compound CC(=O)OC(C)(C)C WMOVHXAZOJBABW-UHFFFAOYSA-N 0.000 description 7
- JAELLLITIZHOGQ-UHFFFAOYSA-N tert-butyl propanoate Chemical compound CCC(=O)OC(C)(C)C JAELLLITIZHOGQ-UHFFFAOYSA-N 0.000 description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005227 gel permeation chromatography Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 4
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 4
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 4
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 4
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 4
- HHFAWKCIHAUFRX-UHFFFAOYSA-N ethoxide Chemical compound CC[O-] HHFAWKCIHAUFRX-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000000671 immersion lithography Methods 0.000 description 4
- 229940098779 methanesulfonic acid Drugs 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 150000005846 sugar alcohols Polymers 0.000 description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 4
- AOPDRZXCEAKHHW-UHFFFAOYSA-N 1-pentoxypentane Chemical compound CCCCCOCCCCC AOPDRZXCEAKHHW-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 3
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- ZMYXZXUHYAGGKG-UHFFFAOYSA-N propoxysilane Chemical compound CCCO[SiH3] ZMYXZXUHYAGGKG-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 2
- NFDXQGNDWIPXQL-UHFFFAOYSA-N 1-cyclooctyldiazocane Chemical compound C1CCCCCCC1N1NCCCCCC1 NFDXQGNDWIPXQL-UHFFFAOYSA-N 0.000 description 2
- CXIMASKUSRFXJH-UHFFFAOYSA-N 1-pentoxypentane;titanium Chemical compound [Ti].CCCCCOCCCCC CXIMASKUSRFXJH-UHFFFAOYSA-N 0.000 description 2
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 2
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 2
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 2
- XRXOJSFPPFDQKU-UHFFFAOYSA-N C(C)OC([O-])C.[Ti+4].C(C)OC([O-])C.C(C)OC([O-])C.C(C)OC([O-])C Chemical compound C(C)OC([O-])C.[Ti+4].C(C)OC([O-])C.C(C)OC([O-])C.C(C)OC([O-])C XRXOJSFPPFDQKU-UHFFFAOYSA-N 0.000 description 2
- 0 C*(C)CC(C)(C(C)(C)*)C(OC(C)(C)C(C(F)(F)F)(C(F)(F)F)O)=O Chemical compound C*(C)CC(C)(C(C)(C)*)C(OC(C)(C)C(C(F)(F)F)(C(F)(F)F)O)=O 0.000 description 2
- 206010010071 Coma Diseases 0.000 description 2
- XBPCUCUWBYBCDP-UHFFFAOYSA-N Dicyclohexylamine Chemical compound C1CCCCC1NC1CCCCC1 XBPCUCUWBYBCDP-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- CNNYQGIUGXJEJJ-UHFFFAOYSA-N [Ge+2].C[O-].C[O-] Chemical compound [Ge+2].C[O-].C[O-] CNNYQGIUGXJEJJ-UHFFFAOYSA-N 0.000 description 2
- ZMYZKNHXZLWPEB-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[O--].[O--].[Ti+4].[Ti+4].[Ti+4] Chemical compound [O--].[O--].[O--].[O--].[O--].[O--].[Ti+4].[Ti+4].[Ti+4] ZMYZKNHXZLWPEB-UHFFFAOYSA-N 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 2
- 229910001863 barium hydroxide Inorganic materials 0.000 description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 2
- 229940092714 benzenesulfonic acid Drugs 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 2
- 239000000920 calcium hydroxide Substances 0.000 description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 2
- 229940075419 choline hydroxide Drugs 0.000 description 2
- 150000004292 cyclic ethers Chemical class 0.000 description 2
- FJFKIPQEUBVHPU-UHFFFAOYSA-N cyclohexyloxycyclohexane;titanium Chemical compound [Ti].C1CCCCC1OC1CCCCC1 FJFKIPQEUBVHPU-UHFFFAOYSA-N 0.000 description 2
- WTLFDDHWPXQUJA-UHFFFAOYSA-N cyclopentyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1CCCC1 WTLFDDHWPXQUJA-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000012973 diazabicyclooctane Substances 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- DVYUOQXRGHUWKE-UHFFFAOYSA-N dimethyl(2-phenylethoxy)silane Chemical compound C[SiH](C)OCCC1=CC=CC=C1 DVYUOQXRGHUWKE-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000012156 elution solvent Substances 0.000 description 2
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 2
- 230000002431 foraging effect Effects 0.000 description 2
- 238000005194 fractionation Methods 0.000 description 2
- KIXLEMHCRGHACT-UHFFFAOYSA-N hafnium(4+);methanolate Chemical compound [Hf+4].[O-]C.[O-]C.[O-]C.[O-]C KIXLEMHCRGHACT-UHFFFAOYSA-N 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- ZEIWWVGGEOHESL-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC.OC.OC.OC ZEIWWVGGEOHESL-UHFFFAOYSA-N 0.000 description 2
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- IFFPHDYFQRRKPZ-UHFFFAOYSA-N phenol;titanium Chemical compound [Ti].OC1=CC=CC=C1.OC1=CC=CC=C1.OC1=CC=CC=C1.OC1=CC=CC=C1 IFFPHDYFQRRKPZ-UHFFFAOYSA-N 0.000 description 2
- 229960004838 phosphoric acid Drugs 0.000 description 2
- IVDFJHOHABJVEH-UHFFFAOYSA-N pinacol Chemical compound CC(C)(O)C(C)(C)O IVDFJHOHABJVEH-UHFFFAOYSA-N 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 150000003138 primary alcohols Chemical group 0.000 description 2
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000003333 secondary alcohols Chemical group 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 2
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 2
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 2
- QOPBTFMUVTXWFF-UHFFFAOYSA-N tripropyl phosphite Chemical compound CCCOP(OCCC)OCCC QOPBTFMUVTXWFF-UHFFFAOYSA-N 0.000 description 2
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- CAFAOQIVXSSFSY-UHFFFAOYSA-N 1-ethoxyethanol Chemical compound CCOC(C)O CAFAOQIVXSSFSY-UHFFFAOYSA-N 0.000 description 1
- ANNXCVXJYNOQMC-UHFFFAOYSA-N 1-ethoxyethanolate hafnium(4+) Chemical compound C(C)OC([O-])C.[Hf+4].C(C)OC([O-])C.C(C)OC([O-])C.C(C)OC([O-])C ANNXCVXJYNOQMC-UHFFFAOYSA-N 0.000 description 1
- GNFIHZDKQDJZBM-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate;1-methoxypropan-2-yl acetate Chemical compound COCC(C)OC(C)=O.CCOCC(C)OC(C)=O GNFIHZDKQDJZBM-UHFFFAOYSA-N 0.000 description 1
- GEGLCBTXYBXOJA-UHFFFAOYSA-N 1-methoxyethanol Chemical compound COC(C)O GEGLCBTXYBXOJA-UHFFFAOYSA-N 0.000 description 1
- HOSCYKXPGYWDSF-UHFFFAOYSA-N 1-methoxyethanolate titanium(4+) Chemical compound COC([O-])C.[Ti+4].COC([O-])C.COC([O-])C.COC([O-])C HOSCYKXPGYWDSF-UHFFFAOYSA-N 0.000 description 1
- PEMKDLXNZSXEFF-UHFFFAOYSA-N 1-pentoxypentane yttrium Chemical compound C(CCCC)OCCCCC.[Y] PEMKDLXNZSXEFF-UHFFFAOYSA-N 0.000 description 1
- SYDOCKQIFFRAET-UHFFFAOYSA-N 2,2-dibutoxyethyl 3-oxobutanoate;yttrium Chemical compound [Y].CCCCOC(OCCCC)COC(=O)CC(C)=O SYDOCKQIFFRAET-UHFFFAOYSA-N 0.000 description 1
- UFQFKHLOJDUSSU-UHFFFAOYSA-N 2,2-dipropoxyethyl 3-oxobutanoate Chemical compound CCCOC(OCCC)COC(=O)CC(C)=O UFQFKHLOJDUSSU-UHFFFAOYSA-N 0.000 description 1
- FKDHPROTDZPUBZ-UHFFFAOYSA-N 2,2-dipropoxyethyl 3-oxobutanoate;yttrium Chemical compound [Y].CCCOC(OCCC)COC(=O)CC(C)=O FKDHPROTDZPUBZ-UHFFFAOYSA-N 0.000 description 1
- YYABQLHINCULIT-UHFFFAOYSA-N 2,4-dimethyloctane-2,4-diol Chemical compound CCCCC(C)(O)CC(C)(C)O YYABQLHINCULIT-UHFFFAOYSA-N 0.000 description 1
- ZWNMRZQYWRLGMM-UHFFFAOYSA-N 2,5-dimethylhexane-2,5-diol Chemical compound CC(C)(O)CCC(C)(C)O ZWNMRZQYWRLGMM-UHFFFAOYSA-N 0.000 description 1
- MLXMQBGBMIFRSY-UHFFFAOYSA-N 2-(cyclohexen-1-yl)ethyl-triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCC1=CCCCC1 MLXMQBGBMIFRSY-UHFFFAOYSA-N 0.000 description 1
- HXSQYLVIFHUAEI-UHFFFAOYSA-N 2-(cyclohexen-1-yl)ethyl-trimethoxysilane Chemical compound CO[Si](OC)(OC)CCC1=CCCCC1 HXSQYLVIFHUAEI-UHFFFAOYSA-N 0.000 description 1
- QUEWFZLDCBHIBL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)ethyl-tripropoxysilane Chemical compound CCCO[Si](OCCC)(OCCC)CCC1=CCCCC1 QUEWFZLDCBHIBL-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- YPLPSYQDYHICTH-UHFFFAOYSA-N 2-(oxolan-2-ylmethoxymethyl)oxolane;titanium Chemical compound [Ti].C1CCOC1COCC1CCCO1 YPLPSYQDYHICTH-UHFFFAOYSA-N 0.000 description 1
- IUXYVKZUDNLISR-UHFFFAOYSA-N 2-(tert-butylamino)ethanol Chemical compound CC(C)(C)NCCO IUXYVKZUDNLISR-UHFFFAOYSA-N 0.000 description 1
- VTYZTWSUUXQSPZ-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)O.OCCN(CCO)CCO.OCCN(CCO)CCO VTYZTWSUUXQSPZ-UHFFFAOYSA-N 0.000 description 1
- XHJGXOOOMKCJPP-UHFFFAOYSA-N 2-[tert-butyl(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(C(C)(C)C)CCO XHJGXOOOMKCJPP-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- KTXWGMUMDPYXNN-UHFFFAOYSA-N 2-ethylhexan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCCC(CC)C[O-].CCCCC(CC)C[O-].CCCCC(CC)C[O-].CCCCC(CC)C[O-] KTXWGMUMDPYXNN-UHFFFAOYSA-N 0.000 description 1
- WSJNVMOIBCRTIR-UHFFFAOYSA-N 2-ethylhexane-1,3-diolate;titanium(4+) Chemical compound [Ti+4].CCCC([O-])C(CC)C[O-].CCCC([O-])C(CC)C[O-] WSJNVMOIBCRTIR-UHFFFAOYSA-N 0.000 description 1
- BPVLGDGUKDAVDB-UHFFFAOYSA-N 2-phenylethyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)CCC1=CC=CC=C1 BPVLGDGUKDAVDB-UHFFFAOYSA-N 0.000 description 1
- AVZCDBSGOSIHRC-UHFFFAOYSA-N 3-cyclopenta-2,4-dien-1-ylpropyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)CCCC1C=CC=C1 AVZCDBSGOSIHRC-UHFFFAOYSA-N 0.000 description 1
- RJBMHACAOZWSRH-UHFFFAOYSA-N 3-cyclopenta-2,4-dien-1-ylpropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCC1C=CC=C1 RJBMHACAOZWSRH-UHFFFAOYSA-N 0.000 description 1
- RPMYTAWDAZFCBO-UHFFFAOYSA-N 3-methylhexane-1,3-diol Chemical compound CCCC(C)(O)CCO RPMYTAWDAZFCBO-UHFFFAOYSA-N 0.000 description 1
- KBSDLBVPAHQCRY-UHFFFAOYSA-N 307496-19-1 Chemical group C1CC=CCC1CC[Si](O1)(O2)O[Si](O3)(C4CCCC4)O[Si](O4)(C5CCCC5)O[Si]1(C1CCCC1)O[Si](O1)(C5CCCC5)O[Si]2(C2CCCC2)O[Si]3(C2CCCC2)O[Si]41C1CCCC1 KBSDLBVPAHQCRY-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- HHKDWDAAEFGBAC-UHFFFAOYSA-N 5-bicyclo[2.2.1]hept-2-enyl(triethoxy)silane Chemical compound C1C2C([Si](OCC)(OCC)OCC)CC1C=C2 HHKDWDAAEFGBAC-UHFFFAOYSA-N 0.000 description 1
- HRJSLUPAMXKPPM-UHFFFAOYSA-N 5-methyl-2-(3-methylphenyl)pyrazol-3-amine Chemical compound N1=C(C)C=C(N)N1C1=CC=CC(C)=C1 HRJSLUPAMXKPPM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- REIYHFWZISXFKU-UHFFFAOYSA-N Butyl acetoacetate Chemical compound CCCCOC(=O)CC(C)=O REIYHFWZISXFKU-UHFFFAOYSA-N 0.000 description 1
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- PJCLYQPPDRRYLS-UHFFFAOYSA-N C(C)(C)O[SiH2]OC(C)C.C1(CCCCCC1)C1CCCCCC1 Chemical compound C(C)(C)O[SiH2]OC(C)C.C1(CCCCCC1)C1CCCCCC1 PJCLYQPPDRRYLS-UHFFFAOYSA-N 0.000 description 1
- AGDHZKMIELIVMM-UHFFFAOYSA-N C(C)OC([O-])C.[Ge+2].C(C)OC([O-])C Chemical compound C(C)OC([O-])C.[Ge+2].C(C)OC([O-])C AGDHZKMIELIVMM-UHFFFAOYSA-N 0.000 description 1
- TTYDDLRUFIHAIJ-UHFFFAOYSA-N C(CC)O[Nb] Chemical compound C(CC)O[Nb] TTYDDLRUFIHAIJ-UHFFFAOYSA-N 0.000 description 1
- AXBZKIWKWNUUEO-UHFFFAOYSA-N C(CC1=CC=CC=C1)[Si](OCCC)(OCCC)OCCC.C1(=CC=CC=C1)CC[Si](OCC)(OCC)OCC Chemical compound C(CC1=CC=CC=C1)[Si](OCCC)(OCCC)OCCC.C1(=CC=CC=C1)CC[Si](OCC)(OCC)OCC AXBZKIWKWNUUEO-UHFFFAOYSA-N 0.000 description 1
- RWKWKKRCEHESNL-UHFFFAOYSA-N C(CCCC)OCCCCC.[Ge] Chemical compound C(CCCC)OCCCCC.[Ge] RWKWKKRCEHESNL-UHFFFAOYSA-N 0.000 description 1
- YGEOTTQAEXRAHW-UHFFFAOYSA-N C(CCCC)OCCCCC.[Hf] Chemical compound C(CCCC)OCCCCC.[Hf] YGEOTTQAEXRAHW-UHFFFAOYSA-N 0.000 description 1
- VABWGZVWXHGHGP-UHFFFAOYSA-N C1(=CCCCC1)[Si](OCCC)(OCCC)CC Chemical compound C1(=CCCCC1)[Si](OCCC)(OCCC)CC VABWGZVWXHGHGP-UHFFFAOYSA-N 0.000 description 1
- BBZBJRVAEOSDFW-UHFFFAOYSA-N C1(C=CC=C1)CCC[SiH](OCCC)OCCC Chemical compound C1(C=CC=C1)CCC[SiH](OCCC)OCCC BBZBJRVAEOSDFW-UHFFFAOYSA-N 0.000 description 1
- HLDAFUAKBBDUGQ-UHFFFAOYSA-N C1(C=CC=C1)CCC[Si](OC(C)C)(OC(C)C)OC(C)C Chemical compound C1(C=CC=C1)CCC[Si](OC(C)C)(OC(C)C)OC(C)C HLDAFUAKBBDUGQ-UHFFFAOYSA-N 0.000 description 1
- JWWOMOLAWHUFHR-UHFFFAOYSA-N C1(C=CC=C1)CCC[Si](OCCC)(OCCC)OCCC Chemical compound C1(C=CC=C1)CCC[Si](OCCC)(OCCC)OCCC JWWOMOLAWHUFHR-UHFFFAOYSA-N 0.000 description 1
- PMCGGXSVIIECGJ-UHFFFAOYSA-N CC(C)O[SiH2]OC(C)C.C1CCC=C(CC1)C1=CCCCCC1.C1CCC=C(CC1)C1=CCCCCC1 Chemical compound CC(C)O[SiH2]OC(C)C.C1CCC=C(CC1)C1=CCCCCC1.C1CCC=C(CC1)C1=CCCCCC1 PMCGGXSVIIECGJ-UHFFFAOYSA-N 0.000 description 1
- AFODJWLTZZIPDU-UHFFFAOYSA-N CCCCCCCCCCCC(OCCN1CCOCC1)=O Chemical compound CCCCCCCCCCCC(OCCN1CCOCC1)=O AFODJWLTZZIPDU-UHFFFAOYSA-N 0.000 description 1
- NIDDALIDHRPGRQ-UHFFFAOYSA-N CCCCO[As] Chemical compound CCCCO[As] NIDDALIDHRPGRQ-UHFFFAOYSA-N 0.000 description 1
- QLZQOSLRZMTCRA-UHFFFAOYSA-N CCCCO[Bi] Chemical compound CCCCO[Bi] QLZQOSLRZMTCRA-UHFFFAOYSA-N 0.000 description 1
- CXLATMDDROQJAI-UHFFFAOYSA-N CCCCO[Nb] Chemical compound CCCCO[Nb] CXLATMDDROQJAI-UHFFFAOYSA-N 0.000 description 1
- WGWPCFWJFBMYQZ-UHFFFAOYSA-N CCCCO[Ta] Chemical compound CCCCO[Ta] WGWPCFWJFBMYQZ-UHFFFAOYSA-N 0.000 description 1
- YQEVIZPKEOELNL-UHFFFAOYSA-N CCCCO[Zr] Chemical compound CCCCO[Zr] YQEVIZPKEOELNL-UHFFFAOYSA-N 0.000 description 1
- YXZGROCVKZSUAG-UHFFFAOYSA-N CCCO[As] Chemical compound CCCO[As] YXZGROCVKZSUAG-UHFFFAOYSA-N 0.000 description 1
- DYASSRLBQILNPO-UHFFFAOYSA-N CCCO[SiH2]OCCC.C1CCC=C(CC1)C1=CCCCCC1.C1CCC=C(CC1)C1=CCCCCC1 Chemical compound CCCO[SiH2]OCCC.C1CCC=C(CC1)C1=CCCCCC1.C1CCC=C(CC1)C1=CCCCCC1 DYASSRLBQILNPO-UHFFFAOYSA-N 0.000 description 1
- POMIRUBDTVIJBH-UHFFFAOYSA-N CCCO[SiH2]OCCC.C1CCCC(CC1)C1CCCCCC1.C1CCCC(CC1)C1CCCCCC1 Chemical compound CCCO[SiH2]OCCC.C1CCCC(CC1)C1CCCCCC1.C1CCCC(CC1)C1CCCCCC1 POMIRUBDTVIJBH-UHFFFAOYSA-N 0.000 description 1
- POWLNZLBDWXMTR-UHFFFAOYSA-N CCCO[Sn] Chemical compound CCCO[Sn] POWLNZLBDWXMTR-UHFFFAOYSA-N 0.000 description 1
- FZEGQDZWOCMALB-UHFFFAOYSA-N CCCO[Ta] Chemical compound CCCO[Ta] FZEGQDZWOCMALB-UHFFFAOYSA-N 0.000 description 1
- GWYDZVYZTDJZQB-UHFFFAOYSA-N CCCO[Zr] Chemical compound CCCO[Zr] GWYDZVYZTDJZQB-UHFFFAOYSA-N 0.000 description 1
- CWQBKGXWSRADMS-UHFFFAOYSA-N CCO[Nb] Chemical compound CCO[Nb] CWQBKGXWSRADMS-UHFFFAOYSA-N 0.000 description 1
- MPNBIQIMQQOUTJ-UHFFFAOYSA-N CCO[SiH2]OCC.C1CCC=C(CC1)C1=CCCCCC1.C1CCC=C(CC1)C1=CCCCCC1 Chemical compound CCO[SiH2]OCC.C1CCC=C(CC1)C1=CCCCCC1.C1CCC=C(CC1)C1=CCCCCC1 MPNBIQIMQQOUTJ-UHFFFAOYSA-N 0.000 description 1
- DSUNKLRZKQXDCZ-UHFFFAOYSA-N CCO[SiH2]OCC.C1CCCC(CC1)C1CCCCCC1.C1CCCC(CC1)C1CCCCCC1 Chemical compound CCO[SiH2]OCC.C1CCCC(CC1)C1CCCCCC1.C1CCCC(CC1)C1CCCCCC1 DSUNKLRZKQXDCZ-UHFFFAOYSA-N 0.000 description 1
- DJCDXWHFUVBGLR-UHFFFAOYSA-N CCO[Ta] Chemical compound CCO[Ta] DJCDXWHFUVBGLR-UHFFFAOYSA-N 0.000 description 1
- SFAMGCXGKVMOHI-UHFFFAOYSA-N CCO[Zr] Chemical compound CCO[Zr] SFAMGCXGKVMOHI-UHFFFAOYSA-N 0.000 description 1
- GIAZZNVBUAVULU-UHFFFAOYSA-N CO[Nb] Chemical compound CO[Nb] GIAZZNVBUAVULU-UHFFFAOYSA-N 0.000 description 1
- QNBQBLHJONLQLE-UHFFFAOYSA-N CO[SiH2]OC.C1CCC=C(CC1)C1=CCCCCC1.C1CCC=C(CC1)C1=CCCCCC1 Chemical compound CO[SiH2]OC.C1CCC=C(CC1)C1=CCCCCC1.C1CCC=C(CC1)C1=CCCCCC1 QNBQBLHJONLQLE-UHFFFAOYSA-N 0.000 description 1
- DRDOPWYXMQIUSW-UHFFFAOYSA-N CO[SiH2]OC.C1CCCC(CC1)C1CCCCCC1.C1CCCC(CC1)C1CCCCCC1 Chemical compound CO[SiH2]OC.C1CCCC(CC1)C1CCCCCC1.C1CCCC(CC1)C1CCCCCC1 DRDOPWYXMQIUSW-UHFFFAOYSA-N 0.000 description 1
- DCZATVBQAVOLBH-UHFFFAOYSA-N CO[Ta] Chemical compound CO[Ta] DCZATVBQAVOLBH-UHFFFAOYSA-N 0.000 description 1
- HJPIBCYETOGAPH-UHFFFAOYSA-N CO[Zr] Chemical compound CO[Zr] HJPIBCYETOGAPH-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 101000692259 Homo sapiens Phosphoprotein associated with glycosphingolipid-enriched microdomains 1 Proteins 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- 102100026066 Phosphoprotein associated with glycosphingolipid-enriched microdomains 1 Human genes 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 101000987219 Sus scrofa Pregnancy-associated glycoprotein 1 Proteins 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910008938 W—Si Inorganic materials 0.000 description 1
- OXMKQIVTFWEMRJ-UHFFFAOYSA-N [B+3].CCCC[O-].CCCC[O-].CCCC[O-] Chemical compound [B+3].CCCC[O-].CCCC[O-].CCCC[O-] OXMKQIVTFWEMRJ-UHFFFAOYSA-N 0.000 description 1
- HFRDIOLOKCMOCE-UHFFFAOYSA-K [B+3].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 Chemical compound [B+3].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 HFRDIOLOKCMOCE-UHFFFAOYSA-K 0.000 description 1
- XVUDBSAOAVIAMO-UHFFFAOYSA-N [B].CCCCCOCCCCC Chemical compound [B].CCCCCOCCCCC XVUDBSAOAVIAMO-UHFFFAOYSA-N 0.000 description 1
- QFBYBEDCELVEAJ-UHFFFAOYSA-L [Ge+2].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 Chemical compound [Ge+2].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 QFBYBEDCELVEAJ-UHFFFAOYSA-L 0.000 description 1
- NYLCNGGPDSDGAT-UHFFFAOYSA-M [Nb]Oc1ccccc1 Chemical compound [Nb]Oc1ccccc1 NYLCNGGPDSDGAT-UHFFFAOYSA-M 0.000 description 1
- WLZJIQDPYBPISH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Hf+4].[Hf+4].[Hf+4] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Hf+4].[Hf+4].[Hf+4] WLZJIQDPYBPISH-UHFFFAOYSA-N 0.000 description 1
- ZKOJILGDAIBQJI-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Y+3].[Y+3].[Y+3].[Y+3] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Y+3].[Y+3].[Y+3].[Y+3] ZKOJILGDAIBQJI-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- NPAPQQQAMCBIHV-UHFFFAOYSA-N [O-]CC.C[O-].[Y+2] Chemical compound [O-]CC.C[O-].[Y+2] NPAPQQQAMCBIHV-UHFFFAOYSA-N 0.000 description 1
- FRICJWHSKNRMRI-UHFFFAOYSA-N [O-]CCC.[Ge+2].[O-]CCC Chemical compound [O-]CCC.[Ge+2].[O-]CCC FRICJWHSKNRMRI-UHFFFAOYSA-N 0.000 description 1
- PUZPSEGLMUDFOY-UHFFFAOYSA-N [O-]CCCC.[Ge+2].[O-]CCCC Chemical compound [O-]CCCC.[Ge+2].[O-]CCCC PUZPSEGLMUDFOY-UHFFFAOYSA-N 0.000 description 1
- GQQZZPPGARCSJA-UHFFFAOYSA-M [Ta]OC1=CC=CC=C1 Chemical compound [Ta]OC1=CC=CC=C1 GQQZZPPGARCSJA-UHFFFAOYSA-M 0.000 description 1
- QYIBXNARBGCCNX-UHFFFAOYSA-N [V+3].CCCC[O-].CCCC[O-].CCCC[O-] Chemical compound [V+3].CCCC[O-].CCCC[O-].CCCC[O-] QYIBXNARBGCCNX-UHFFFAOYSA-N 0.000 description 1
- ZZRNJMAKTWOSPG-UHFFFAOYSA-N [V+3].CCC[O-].CCC[O-].CCC[O-] Chemical compound [V+3].CCC[O-].CCC[O-].CCC[O-] ZZRNJMAKTWOSPG-UHFFFAOYSA-N 0.000 description 1
- RNXCVEJDFWAVFE-UHFFFAOYSA-N [Y+3].CCOC(C)[O-].CCOC(C)[O-].CCOC(C)[O-] Chemical compound [Y+3].CCOC(C)[O-].CCOC(C)[O-].CCOC(C)[O-] RNXCVEJDFWAVFE-UHFFFAOYSA-N 0.000 description 1
- XULVCGCFBVVYIA-UHFFFAOYSA-M [Zr]Oc1ccccc1 Chemical compound [Zr]Oc1ccccc1 XULVCGCFBVVYIA-UHFFFAOYSA-M 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 1
- AAXXDQSJBBUYAB-UHFFFAOYSA-N aluminum 1-ethoxyethanolate Chemical compound [Al+3].CCOC(C)[O-].CCOC(C)[O-].CCOC(C)[O-] AAXXDQSJBBUYAB-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- CPLASELWOOUNGW-UHFFFAOYSA-N benzyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)CC1=CC=CC=C1 CPLASELWOOUNGW-UHFFFAOYSA-N 0.000 description 1
- GQVVQDJHRQBZNG-UHFFFAOYSA-N benzyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CC1=CC=CC=C1 GQVVQDJHRQBZNG-UHFFFAOYSA-N 0.000 description 1
- KGHAWANAXTWFBP-UHFFFAOYSA-N benzyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)CC1=CC=CC=C1 KGHAWANAXTWFBP-UHFFFAOYSA-N 0.000 description 1
- RFXODRCAZTVEOH-UHFFFAOYSA-N benzyl-ethoxy-dimethylsilane Chemical compound CCO[Si](C)(C)CC1=CC=CC=C1 RFXODRCAZTVEOH-UHFFFAOYSA-N 0.000 description 1
- SBJRJOGHMYNSCQ-UHFFFAOYSA-N benzyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)CC1=CC=CC=C1 SBJRJOGHMYNSCQ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- UDJBGDKOPXLQJA-UHFFFAOYSA-N boron;cyclohexyloxycyclohexane Chemical compound [B].C1CCCCC1OC1CCCCC1 UDJBGDKOPXLQJA-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- CKEGKURXFKLBDX-UHFFFAOYSA-N butan-1-ol;hafnium Chemical compound [Hf].CCCCO.CCCCO.CCCCO.CCCCO CKEGKURXFKLBDX-UHFFFAOYSA-N 0.000 description 1
- DFOMPYFFBAELGP-UHFFFAOYSA-N butan-1-ol;yttrium Chemical compound [Y].CCCCO.CCCCO.CCCCO DFOMPYFFBAELGP-UHFFFAOYSA-N 0.000 description 1
- LQJIYGHLYACICO-UHFFFAOYSA-N butan-2-yl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C(C)CC LQJIYGHLYACICO-UHFFFAOYSA-N 0.000 description 1
- AMSAPKJTBARTTR-UHFFFAOYSA-N butan-2-yl(trimethoxy)silane Chemical compound CCC(C)[Si](OC)(OC)OC AMSAPKJTBARTTR-UHFFFAOYSA-N 0.000 description 1
- DNYVMXJXGNLANE-UHFFFAOYSA-N butan-2-yl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C(C)CC DNYVMXJXGNLANE-UHFFFAOYSA-N 0.000 description 1
- TWWATCWHACTGNY-UHFFFAOYSA-N butan-2-yl-tri(propan-2-yloxy)silane Chemical compound CCC(C)[Si](OC(C)C)(OC(C)C)OC(C)C TWWATCWHACTGNY-UHFFFAOYSA-N 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- BJVKGSNLIFBPMO-UHFFFAOYSA-N butoxyantimony Chemical compound CCCCO[Sb] BJVKGSNLIFBPMO-UHFFFAOYSA-N 0.000 description 1
- DOBSQSLSWMMIEM-UHFFFAOYSA-N butoxytin Chemical compound CCCCO[Sn] DOBSQSLSWMMIEM-UHFFFAOYSA-N 0.000 description 1
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 description 1
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 description 1
- GNRBSDIBKIHSJH-UHFFFAOYSA-N butyl(tripropoxy)silane Chemical compound CCCC[Si](OCCC)(OCCC)OCCC GNRBSDIBKIHSJH-UHFFFAOYSA-N 0.000 description 1
- OOWHVJAPAMPBEX-UHFFFAOYSA-N butyl-tri(propan-2-yloxy)silane Chemical compound CCCC[Si](OC(C)C)(OC(C)C)OC(C)C OOWHVJAPAMPBEX-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZDAHXLJSCWTZSQ-UHFFFAOYSA-N cyclobutyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C1CCC1 ZDAHXLJSCWTZSQ-UHFFFAOYSA-N 0.000 description 1
- CCRJEJIPEOBMFG-UHFFFAOYSA-N cyclobutyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CCC1 CCRJEJIPEOBMFG-UHFFFAOYSA-N 0.000 description 1
- UNXDKLTYXUQGSO-UHFFFAOYSA-N cyclobutyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1CCC1 UNXDKLTYXUQGSO-UHFFFAOYSA-N 0.000 description 1
- AJXUZCSUKSAGKO-UHFFFAOYSA-N cyclobutyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C1CCC1 AJXUZCSUKSAGKO-UHFFFAOYSA-N 0.000 description 1
- VZNWNVAEUAWHSO-UHFFFAOYSA-N cyclohexen-1-yl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C1=CCCCC1 VZNWNVAEUAWHSO-UHFFFAOYSA-N 0.000 description 1
- MIZPLDZQVGUDMR-UHFFFAOYSA-N cyclohexen-1-yl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1=CCCCC1 MIZPLDZQVGUDMR-UHFFFAOYSA-N 0.000 description 1
- PPEZMSQHYPCVQF-UHFFFAOYSA-N cyclohexen-1-yl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1=CCCCC1 PPEZMSQHYPCVQF-UHFFFAOYSA-N 0.000 description 1
- NBBOMIYNYXXQNB-UHFFFAOYSA-N cyclohexen-1-yl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C1=CCCCC1 NBBOMIYNYXXQNB-UHFFFAOYSA-N 0.000 description 1
- ATGKAFZFOALBOF-UHFFFAOYSA-N cyclohexyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C1CCCCC1 ATGKAFZFOALBOF-UHFFFAOYSA-N 0.000 description 1
- MEWFSXFFGFDHGV-UHFFFAOYSA-N cyclohexyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CCCCC1 MEWFSXFFGFDHGV-UHFFFAOYSA-N 0.000 description 1
- OWTZOBMYFOECIQ-UHFFFAOYSA-N cyclohexyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1CCCCC1 OWTZOBMYFOECIQ-UHFFFAOYSA-N 0.000 description 1
- OCDXZFSOHJRGIL-UHFFFAOYSA-N cyclohexyloxycyclohexane Chemical compound C1CCCCC1OC1CCCCC1 OCDXZFSOHJRGIL-UHFFFAOYSA-N 0.000 description 1
- SQNHRXQHIQQDGS-UHFFFAOYSA-N cyclohexyloxycyclohexane;germanium Chemical compound [Ge].C1CCCCC1OC1CCCCC1 SQNHRXQHIQQDGS-UHFFFAOYSA-N 0.000 description 1
- HYDSXWCJQHRYFK-UHFFFAOYSA-N cyclohexyloxycyclohexane;hafnium Chemical compound [Hf].C1CCCCC1OC1CCCCC1 HYDSXWCJQHRYFK-UHFFFAOYSA-N 0.000 description 1
- XFNFKPXLEHXAKO-UHFFFAOYSA-N cyclohexyloxycyclohexane;yttrium Chemical compound [Y].C1CCCCC1OC1CCCCC1 XFNFKPXLEHXAKO-UHFFFAOYSA-N 0.000 description 1
- YHBLFIGZJGXPEZ-UHFFFAOYSA-N cyclooctyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C1CCCCCCC1 YHBLFIGZJGXPEZ-UHFFFAOYSA-N 0.000 description 1
- AQSVOHKIXIEQIK-UHFFFAOYSA-N cyclooctyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CCCCCCC1 AQSVOHKIXIEQIK-UHFFFAOYSA-N 0.000 description 1
- KIMSOWDBJDLHIT-UHFFFAOYSA-N cyclooctyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1CCCCCCC1 KIMSOWDBJDLHIT-UHFFFAOYSA-N 0.000 description 1
- SMVMIYKGGFDRJX-UHFFFAOYSA-N cyclooctyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C1CCCCCCC1 SMVMIYKGGFDRJX-UHFFFAOYSA-N 0.000 description 1
- XOVJAYNMQDTIJD-UHFFFAOYSA-N cyclopentobarbital Chemical compound C1CC=CC1C1(CC=C)C(=O)NC(=O)NC1=O XOVJAYNMQDTIJD-UHFFFAOYSA-N 0.000 description 1
- YRMPTIHEUZLTDO-UHFFFAOYSA-N cyclopentyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CCCC1 YRMPTIHEUZLTDO-UHFFFAOYSA-N 0.000 description 1
- XBAHPWBMWKWZHA-UHFFFAOYSA-N cyclopentyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C1CCCC1 XBAHPWBMWKWZHA-UHFFFAOYSA-N 0.000 description 1
- PROCFPHHUVOPIT-UHFFFAOYSA-N cyclopropyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C1CC1 PROCFPHHUVOPIT-UHFFFAOYSA-N 0.000 description 1
- FWCBQAXNMWDAFK-UHFFFAOYSA-N cyclopropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CC1 FWCBQAXNMWDAFK-UHFFFAOYSA-N 0.000 description 1
- VEZLGDIZAYOBII-UHFFFAOYSA-N cyclopropyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1CC1 VEZLGDIZAYOBII-UHFFFAOYSA-N 0.000 description 1
- AMNIDILVZMEABP-UHFFFAOYSA-N cyclopropyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C1CC1 AMNIDILVZMEABP-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- SNEGIHORRGJSED-UHFFFAOYSA-N di(butan-2-yl)-di(propan-2-yloxy)silane Chemical compound CCC(C)[Si](OC(C)C)(OC(C)C)C(C)CC SNEGIHORRGJSED-UHFFFAOYSA-N 0.000 description 1
- VSLASQQLPGVYSK-UHFFFAOYSA-N di(butan-2-yl)-diethoxysilane Chemical compound CCO[Si](OCC)(C(C)CC)C(C)CC VSLASQQLPGVYSK-UHFFFAOYSA-N 0.000 description 1
- HVHRIKGOFGJBFM-UHFFFAOYSA-N di(butan-2-yl)-dimethoxysilane Chemical compound CCC(C)[Si](OC)(OC)C(C)CC HVHRIKGOFGJBFM-UHFFFAOYSA-N 0.000 description 1
- LAGUJICBGGFHSR-UHFFFAOYSA-N di(butan-2-yl)-dipropoxysilane Chemical compound CCCO[Si](C(C)CC)(C(C)CC)OCCC LAGUJICBGGFHSR-UHFFFAOYSA-N 0.000 description 1
- CUZXOUPGUAZNDT-UHFFFAOYSA-N di(cyclobutyl)-di(propan-2-yloxy)silane Chemical compound C1CCC1[Si](OC(C)C)(OC(C)C)C1CCC1 CUZXOUPGUAZNDT-UHFFFAOYSA-N 0.000 description 1
- IHUIEBZUNDVFFW-UHFFFAOYSA-N di(cyclobutyl)-diethoxysilane Chemical compound C1CCC1[Si](OCC)(OCC)C1CCC1 IHUIEBZUNDVFFW-UHFFFAOYSA-N 0.000 description 1
- IZYWPGNHVHQGAG-UHFFFAOYSA-N di(cyclobutyl)-dimethoxysilane Chemical compound C1CCC1[Si](OC)(OC)C1CCC1 IZYWPGNHVHQGAG-UHFFFAOYSA-N 0.000 description 1
- TZBKGPBJAJPEEY-UHFFFAOYSA-N di(cyclobutyl)-dipropoxysilane Chemical compound C1CCC1[Si](OCCC)(OCCC)C1CCC1 TZBKGPBJAJPEEY-UHFFFAOYSA-N 0.000 description 1
- XTAWVQKUWKBXKT-UHFFFAOYSA-N di(cyclooctyl)-di(propan-2-yloxy)silane Chemical compound C1CCCCCCC1[Si](OC(C)C)(OC(C)C)C1CCCCCCC1 XTAWVQKUWKBXKT-UHFFFAOYSA-N 0.000 description 1
- GLPOFYYNAGGYDE-UHFFFAOYSA-N di(cyclooctyl)-diethoxysilane Chemical compound C1CCCCCCC1[Si](OCC)(OCC)C1CCCCCCC1 GLPOFYYNAGGYDE-UHFFFAOYSA-N 0.000 description 1
- NDSVNQADHJTDGA-UHFFFAOYSA-N di(cyclooctyl)-dimethoxysilane Chemical compound C1CCCCCCC1[Si](OC)(OC)C1CCCCCCC1 NDSVNQADHJTDGA-UHFFFAOYSA-N 0.000 description 1
- YIAZAYXLZQZTBX-UHFFFAOYSA-N di(cyclooctyl)-dipropoxysilane Chemical compound C1CCCCCCC1[Si](OCCC)(OCCC)C1CCCCCCC1 YIAZAYXLZQZTBX-UHFFFAOYSA-N 0.000 description 1
- XVCNAZQXIVBYAD-UHFFFAOYSA-N di(propan-2-yl)-di(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C(C)C)(C(C)C)OC(C)C XVCNAZQXIVBYAD-UHFFFAOYSA-N 0.000 description 1
- SHZPQCKUFYRFBI-UHFFFAOYSA-N di(propan-2-yloxy)-dipropylsilane Chemical compound CCC[Si](CCC)(OC(C)C)OC(C)C SHZPQCKUFYRFBI-UHFFFAOYSA-N 0.000 description 1
- XUPOZSRKIBXQCQ-UHFFFAOYSA-K di(propanoyloxy)stibanyl propanoate Chemical compound [Sb+3].CCC([O-])=O.CCC([O-])=O.CCC([O-])=O XUPOZSRKIBXQCQ-UHFFFAOYSA-K 0.000 description 1
- JVLRYPRBKSMEBF-UHFFFAOYSA-K diacetyloxystibanyl acetate Chemical compound [Sb+3].CC([O-])=O.CC([O-])=O.CC([O-])=O JVLRYPRBKSMEBF-UHFFFAOYSA-K 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- DGPFXVBYDAVXLX-UHFFFAOYSA-N dibutyl(diethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)CCCC DGPFXVBYDAVXLX-UHFFFAOYSA-N 0.000 description 1
- YPENMAABQGWRBR-UHFFFAOYSA-N dibutyl(dimethoxy)silane Chemical compound CCCC[Si](OC)(OC)CCCC YPENMAABQGWRBR-UHFFFAOYSA-N 0.000 description 1
- CGYGEZLIGMBRKL-UHFFFAOYSA-N dicyclohexyl(diethoxy)silane Chemical compound C1CCCCC1[Si](OCC)(OCC)C1CCCCC1 CGYGEZLIGMBRKL-UHFFFAOYSA-N 0.000 description 1
- ZVMRWPHIZSSUKP-UHFFFAOYSA-N dicyclohexyl(dimethoxy)silane Chemical compound C1CCCCC1[Si](OC)(OC)C1CCCCC1 ZVMRWPHIZSSUKP-UHFFFAOYSA-N 0.000 description 1
- XDDJJEBKCSSOLY-UHFFFAOYSA-N dicyclohexyl(dipropoxy)silane Chemical compound C1CCCCC1[Si](OCCC)(OCCC)C1CCCCC1 XDDJJEBKCSSOLY-UHFFFAOYSA-N 0.000 description 1
- ZFFHLHOYJTZOIP-UHFFFAOYSA-N dicyclohexyl-di(propan-2-yloxy)silane Chemical compound C1CCCCC1[Si](OC(C)C)(OC(C)C)C1CCCCC1 ZFFHLHOYJTZOIP-UHFFFAOYSA-N 0.000 description 1
- FVAXOELGJXMINU-UHFFFAOYSA-N dicyclopentyl(diethoxy)silane Chemical compound C1CCCC1[Si](OCC)(OCC)C1CCCC1 FVAXOELGJXMINU-UHFFFAOYSA-N 0.000 description 1
- JWCYDYZLEAQGJJ-UHFFFAOYSA-N dicyclopentyl(dimethoxy)silane Chemical compound C1CCCC1[Si](OC)(OC)C1CCCC1 JWCYDYZLEAQGJJ-UHFFFAOYSA-N 0.000 description 1
- PFOATQACJVLYBZ-UHFFFAOYSA-N dicyclopentyl(dipropoxy)silane Chemical compound C1CCCC1[Si](OCCC)(OCCC)C1CCCC1 PFOATQACJVLYBZ-UHFFFAOYSA-N 0.000 description 1
- GFCLACALZBXETA-UHFFFAOYSA-N dicyclopentyl-di(propan-2-yloxy)silane Chemical compound C1CCCC1[Si](OC(C)C)(OC(C)C)C1CCCC1 GFCLACALZBXETA-UHFFFAOYSA-N 0.000 description 1
- ZCSLFHYAKIOHIX-UHFFFAOYSA-N dicyclopropyl(diethoxy)silane Chemical compound C1CC1[Si](OCC)(OCC)C1CC1 ZCSLFHYAKIOHIX-UHFFFAOYSA-N 0.000 description 1
- FITBVULBQAQPQH-UHFFFAOYSA-N dicyclopropyl(dimethoxy)silane Chemical compound C1CC1[Si](OC)(OC)C1CC1 FITBVULBQAQPQH-UHFFFAOYSA-N 0.000 description 1
- LOKCGUUFVVPBMO-UHFFFAOYSA-N dicyclopropyl(dipropoxy)silane Chemical compound C1CC1[Si](OCCC)(OCCC)C1CC1 LOKCGUUFVVPBMO-UHFFFAOYSA-N 0.000 description 1
- ZSSPJMAMZYYXLH-UHFFFAOYSA-N dicyclopropyl-di(propan-2-yloxy)silane Chemical compound C1CC1[Si](OC(C)C)(OC(C)C)C1CC1 ZSSPJMAMZYYXLH-UHFFFAOYSA-N 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- HZLIIKNXMLEWPA-UHFFFAOYSA-N diethoxy(dipropyl)silane Chemical compound CCC[Si](CCC)(OCC)OCC HZLIIKNXMLEWPA-UHFFFAOYSA-N 0.000 description 1
- VVKJJEAEVBNODX-UHFFFAOYSA-N diethoxy-di(propan-2-yl)silane Chemical compound CCO[Si](C(C)C)(C(C)C)OCC VVKJJEAEVBNODX-UHFFFAOYSA-N 0.000 description 1
- UWGJCHRFALXDAR-UHFFFAOYSA-N diethoxy-ethyl-methylsilane Chemical compound CCO[Si](C)(CC)OCC UWGJCHRFALXDAR-UHFFFAOYSA-N 0.000 description 1
- MNFGEHQPOWJJBH-UHFFFAOYSA-N diethoxy-methyl-phenylsilane Chemical compound CCO[Si](C)(OCC)C1=CC=CC=C1 MNFGEHQPOWJJBH-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- BZCJJERBERAQKQ-UHFFFAOYSA-N diethyl(dipropoxy)silane Chemical compound CCCO[Si](CC)(CC)OCCC BZCJJERBERAQKQ-UHFFFAOYSA-N 0.000 description 1
- ZWPNXHXXRLYCHZ-UHFFFAOYSA-N diethyl-di(propan-2-yloxy)silane Chemical compound CC(C)O[Si](CC)(CC)OC(C)C ZWPNXHXXRLYCHZ-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- JVUVKQDVTIIMOD-UHFFFAOYSA-N dimethoxy(dipropyl)silane Chemical compound CCC[Si](OC)(OC)CCC JVUVKQDVTIIMOD-UHFFFAOYSA-N 0.000 description 1
- VHPUZTHRFWIGAW-UHFFFAOYSA-N dimethoxy-di(propan-2-yl)silane Chemical compound CO[Si](OC)(C(C)C)C(C)C VHPUZTHRFWIGAW-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 1
- BPXCAJONOPIXJI-UHFFFAOYSA-N dimethyl-di(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C)(C)OC(C)C BPXCAJONOPIXJI-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- SLAYMDSSGGBWQB-UHFFFAOYSA-N diphenyl(dipropoxy)silane Chemical compound C=1C=CC=CC=1[Si](OCCC)(OCCC)C1=CC=CC=C1 SLAYMDSSGGBWQB-UHFFFAOYSA-N 0.000 description 1
- QAPWZQHBOVKNHP-UHFFFAOYSA-N diphenyl-di(propan-2-yloxy)silane Chemical compound C=1C=CC=CC=1[Si](OC(C)C)(OC(C)C)C1=CC=CC=C1 QAPWZQHBOVKNHP-UHFFFAOYSA-N 0.000 description 1
- AVBCBOQFOQZNFK-UHFFFAOYSA-N dipropoxy(dipropyl)silane Chemical compound CCCO[Si](CCC)(CCC)OCCC AVBCBOQFOQZNFK-UHFFFAOYSA-N 0.000 description 1
- PDEQRROLMQDPND-UHFFFAOYSA-N ethanolate;methanolate;tin(2+) Chemical compound [Sn+2].[O-]C.CC[O-] PDEQRROLMQDPND-UHFFFAOYSA-N 0.000 description 1
- XCKWFNSALCEAPW-UHFFFAOYSA-N ethanolate;tin(2+) Chemical compound [Sn+2].CC[O-].CC[O-] XCKWFNSALCEAPW-UHFFFAOYSA-N 0.000 description 1
- KEQVPIDOPAGWCP-UHFFFAOYSA-N ethanolate;yttrium(3+) Chemical compound [Y+3].CC[O-].CC[O-].CC[O-] KEQVPIDOPAGWCP-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- NNBRCHPBPDRPIT-UHFFFAOYSA-N ethenyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C=C NNBRCHPBPDRPIT-UHFFFAOYSA-N 0.000 description 1
- MABAWBWRUSBLKQ-UHFFFAOYSA-N ethenyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C=C MABAWBWRUSBLKQ-UHFFFAOYSA-N 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- FKDLBUPSJQZYFZ-UHFFFAOYSA-N ethoxy-ethyl-dimethylsilane Chemical compound CCO[Si](C)(C)CC FKDLBUPSJQZYFZ-UHFFFAOYSA-N 0.000 description 1
- XLCHFELJBBOTSX-UHFFFAOYSA-N ethoxyantimony Chemical compound CCO[Sb] XLCHFELJBBOTSX-UHFFFAOYSA-N 0.000 description 1
- LRANRHDJNHABBA-UHFFFAOYSA-N ethoxyarsenic Chemical compound CCO[As] LRANRHDJNHABBA-UHFFFAOYSA-N 0.000 description 1
- OHVMRALFLUMPGF-UHFFFAOYSA-N ethoxybismuth Chemical compound CCO[Bi] OHVMRALFLUMPGF-UHFFFAOYSA-N 0.000 description 1
- FANAUDUYRDVPHX-UHFFFAOYSA-N ethoxytin Chemical compound CCO[Sn] FANAUDUYRDVPHX-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 1
- SXYSRMWUAIQOEL-UHFFFAOYSA-N ethyl-di(propan-2-yloxy)silane Chemical compound CC(C)O[SiH](CC)OC(C)C SXYSRMWUAIQOEL-UHFFFAOYSA-N 0.000 description 1
- HTSRFYSEWIPFNI-UHFFFAOYSA-N ethyl-dimethoxy-methylsilane Chemical compound CC[Si](C)(OC)OC HTSRFYSEWIPFNI-UHFFFAOYSA-N 0.000 description 1
- SUHRFYWSDBWMFS-UHFFFAOYSA-N ethyl-methoxy-dimethylsilane Chemical compound CC[Si](C)(C)OC SUHRFYWSDBWMFS-UHFFFAOYSA-N 0.000 description 1
- MYEJNNDSIXAGNK-UHFFFAOYSA-N ethyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](CC)(OC(C)C)OC(C)C MYEJNNDSIXAGNK-UHFFFAOYSA-N 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- WZRQWSBPAXNLDT-UHFFFAOYSA-J hafnium(4+) tetraphenoxide Chemical compound [Hf+4].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 WZRQWSBPAXNLDT-UHFFFAOYSA-J 0.000 description 1
- SEKCULWEIYBRLO-UHFFFAOYSA-N hafnium(4+);propan-1-olate Chemical compound [Hf+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] SEKCULWEIYBRLO-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical class OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- WVLGTKBIJRAYME-UHFFFAOYSA-N methanolate;yttrium(3+) Chemical compound [Y+3].[O-]C.[O-]C.[O-]C WVLGTKBIJRAYME-UHFFFAOYSA-N 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- YLALLIMOALRHHM-UHFFFAOYSA-N methoxy-dimethyl-(2-phenylethyl)silane Chemical compound CO[Si](C)(C)CCC1=CC=CC=C1 YLALLIMOALRHHM-UHFFFAOYSA-N 0.000 description 1
- REQXNMOSXYEQLM-UHFFFAOYSA-N methoxy-dimethyl-phenylsilane Chemical compound CO[Si](C)(C)C1=CC=CC=C1 REQXNMOSXYEQLM-UHFFFAOYSA-N 0.000 description 1
- HLHZMRQHTSYSST-UHFFFAOYSA-N methoxyantimony Chemical compound CO[Sb] HLHZMRQHTSYSST-UHFFFAOYSA-N 0.000 description 1
- GHAMDDWKPOYZGV-UHFFFAOYSA-N methoxyarsenic Chemical compound CO[As] GHAMDDWKPOYZGV-UHFFFAOYSA-N 0.000 description 1
- QDIOCYAAOUVXIR-UHFFFAOYSA-N methoxybismuth Chemical compound CO[Bi] QDIOCYAAOUVXIR-UHFFFAOYSA-N 0.000 description 1
- QQKLEWWGQDVDND-UHFFFAOYSA-N methoxytin Chemical compound CO[Sn] QQKLEWWGQDVDND-UHFFFAOYSA-N 0.000 description 1
- XTXCFTMJPRXBBC-UHFFFAOYSA-N methyl 4,4-dimethyl-3-oxopentanoate Chemical compound COC(=O)CC(=O)C(C)(C)C XTXCFTMJPRXBBC-UHFFFAOYSA-N 0.000 description 1
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- WCVRQHFDJLLWFE-UHFFFAOYSA-N pentane-1,2-diol Chemical compound CCCC(O)CO WCVRQHFDJLLWFE-UHFFFAOYSA-N 0.000 description 1
- XLMFDCKSFJWJTP-UHFFFAOYSA-N pentane-2,3-diol Chemical compound CCC(O)C(C)O XLMFDCKSFJWJTP-UHFFFAOYSA-N 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-M phenolate Chemical compound [O-]C1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-M 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- ZCCUMCLOSRETFE-UHFFFAOYSA-M phenoxyantimony Chemical compound [Sb]OC1=CC=CC=C1 ZCCUMCLOSRETFE-UHFFFAOYSA-M 0.000 description 1
- AVKUWNUBPFREQI-UHFFFAOYSA-N phenoxyarsenic Chemical compound [As]OC1=CC=CC=C1 AVKUWNUBPFREQI-UHFFFAOYSA-N 0.000 description 1
- OXYGVVKTGSCLGP-UHFFFAOYSA-M phenoxybismuth Chemical compound [Bi]OC1=CC=CC=C1 OXYGVVKTGSCLGP-UHFFFAOYSA-M 0.000 description 1
- CSRCVZZUZZRSEH-UHFFFAOYSA-M phenoxytin Chemical compound [Sn]OC1=CC=CC=C1 CSRCVZZUZZRSEH-UHFFFAOYSA-M 0.000 description 1
- FABOKLHQXVRECE-UHFFFAOYSA-N phenyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1=CC=CC=C1 FABOKLHQXVRECE-UHFFFAOYSA-N 0.000 description 1
- VPLNCHFJAOKWBT-UHFFFAOYSA-N phenyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C1=CC=CC=C1 VPLNCHFJAOKWBT-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- IKNCGYCHMGNBCP-UHFFFAOYSA-N propan-1-olate Chemical compound CCC[O-] IKNCGYCHMGNBCP-UHFFFAOYSA-N 0.000 description 1
- WUBJXWWQGDPUCE-UHFFFAOYSA-N propan-1-olate yttrium(3+) Chemical compound [Y+3].CCC[O-].CCC[O-].CCC[O-] WUBJXWWQGDPUCE-UHFFFAOYSA-N 0.000 description 1
- YHNFWGSEMSWPBF-UHFFFAOYSA-N propan-2-yl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C(C)C YHNFWGSEMSWPBF-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- NCLVBCYENVSYCE-UHFFFAOYSA-N propoxyantimony Chemical compound CCCO[Sb] NCLVBCYENVSYCE-UHFFFAOYSA-N 0.000 description 1
- PLZKKYRVPOUZSL-UHFFFAOYSA-N propoxybismuth Chemical compound CCCO[Bi] PLZKKYRVPOUZSL-UHFFFAOYSA-N 0.000 description 1
- DHGFMVMDBNLMKT-UHFFFAOYSA-N propyl 3-oxobutanoate Chemical compound CCCOC(=O)CC(C)=O DHGFMVMDBNLMKT-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 125000000123 silicon containing inorganic group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- ASEHKQZNVUOPRW-UHFFFAOYSA-N tert-butyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C(C)(C)C ASEHKQZNVUOPRW-UHFFFAOYSA-N 0.000 description 1
- HXLWJGIPGJFBEZ-UHFFFAOYSA-N tert-butyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C(C)(C)C HXLWJGIPGJFBEZ-UHFFFAOYSA-N 0.000 description 1
- UTIRVQGNGQSJNF-UHFFFAOYSA-N tert-butyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C(C)(C)C UTIRVQGNGQSJNF-UHFFFAOYSA-N 0.000 description 1
- HVEXJEOBOQONBC-UHFFFAOYSA-N tert-butyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C(C)(C)C HVEXJEOBOQONBC-UHFFFAOYSA-N 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- GXMNGLIMQIPFEB-UHFFFAOYSA-N tetraethoxygermane Chemical compound CCO[Ge](OCC)(OCC)OCC GXMNGLIMQIPFEB-UHFFFAOYSA-N 0.000 description 1
- ADLSSRLDGACTEX-UHFFFAOYSA-N tetraphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 ADLSSRLDGACTEX-UHFFFAOYSA-N 0.000 description 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- MQVCTPXBBSKLFS-UHFFFAOYSA-N tri(propan-2-yloxy)-propylsilane Chemical compound CCC[Si](OC(C)C)(OC(C)C)OC(C)C MQVCTPXBBSKLFS-UHFFFAOYSA-N 0.000 description 1
- YZVRVDPMGYFCGL-UHFFFAOYSA-N triacetyloxysilyl acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)OC(C)=O YZVRVDPMGYFCGL-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- SAWDTKLQESXBDN-UHFFFAOYSA-N triethoxy(heptyl)silane Chemical compound CCCCCCC[Si](OCC)(OCC)OCC SAWDTKLQESXBDN-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- BJDLPDPRMYAOCM-UHFFFAOYSA-N triethoxy(propan-2-yl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)C BJDLPDPRMYAOCM-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- USLHPQORLCHMOC-UHFFFAOYSA-N triethoxygallane Chemical compound CCO[Ga](OCC)OCC USLHPQORLCHMOC-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 description 1
- QFCVQKSWGFVMTB-UHFFFAOYSA-N trihexoxyalumane Chemical compound [Al+3].CCCCCC[O-].CCCCCC[O-].CCCCCC[O-] QFCVQKSWGFVMTB-UHFFFAOYSA-N 0.000 description 1
- UBMUZYGBAGFCDF-UHFFFAOYSA-N trimethoxy(2-phenylethyl)silane Chemical compound CO[Si](OC)(OC)CCC1=CC=CC=C1 UBMUZYGBAGFCDF-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- LGROXJWYRXANBB-UHFFFAOYSA-N trimethoxy(propan-2-yl)silane Chemical compound CO[Si](OC)(OC)C(C)C LGROXJWYRXANBB-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- IORSJXVYWBHMKH-UHFFFAOYSA-N trimethoxy-[2-[4-[(2-methylpropan-2-yl)oxy]phenyl]ethyl]silane Chemical compound CO[Si](OC)(OC)CCC1=CC=C(OC(C)(C)C)C=C1 IORSJXVYWBHMKH-UHFFFAOYSA-N 0.000 description 1
- UAEJRRZPRZCUBE-UHFFFAOYSA-N trimethoxyalumane Chemical compound [Al+3].[O-]C.[O-]C.[O-]C UAEJRRZPRZCUBE-UHFFFAOYSA-N 0.000 description 1
- XIYWAPJTMIWONS-UHFFFAOYSA-N trimethoxygallane Chemical compound [Ga+3].[O-]C.[O-]C.[O-]C XIYWAPJTMIWONS-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
- OPSWAWSNPREEFQ-UHFFFAOYSA-K triphenoxyalumane Chemical compound [Al+3].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 OPSWAWSNPREEFQ-UHFFFAOYSA-K 0.000 description 1
- VUWVDNLZJXLQPT-UHFFFAOYSA-N tripropoxy(propyl)silane Chemical compound CCCO[Si](CCC)(OCCC)OCCC VUWVDNLZJXLQPT-UHFFFAOYSA-N 0.000 description 1
- OBROYCQXICMORW-UHFFFAOYSA-N tripropoxyalumane Chemical compound [Al+3].CCC[O-].CCC[O-].CCC[O-] OBROYCQXICMORW-UHFFFAOYSA-N 0.000 description 1
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 description 1
- LTEHWCSSIHAVOQ-UHFFFAOYSA-N tripropyl borate Chemical compound CCCOB(OCCC)OCCC LTEHWCSSIHAVOQ-UHFFFAOYSA-N 0.000 description 1
- YWIUPWSLDVUCDT-UHFFFAOYSA-N tris(1-methoxyethoxy)alumane Chemical compound [Al+3].COC(C)[O-].COC(C)[O-].COC(C)[O-] YWIUPWSLDVUCDT-UHFFFAOYSA-N 0.000 description 1
- RQNVJDSEWRGEQR-UHFFFAOYSA-N tris(prop-2-enyl) borate Chemical compound C=CCOB(OCC=C)OCC=C RQNVJDSEWRGEQR-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- HODZVVUWYZMUHG-UHFFFAOYSA-K yttrium(3+) triphenoxide Chemical compound [Y+3].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 HODZVVUWYZMUHG-UHFFFAOYSA-K 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
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- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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Description
(A)成分として、下記一般式(A−1)で示されるチタン化合物、該チタン化合物を加水分解もしくは縮合、又は加水分解縮合して得られるチタン含有化合物から選ばれる1種類以上に、下記一般式(A−2)で示される2価又は3価のアルコールを作用させて得られるチタン含有化合物、及び、
Ti(OR1A)4 (A−1)
(式中、R1Aは0又は1個の水酸基を有する炭素数1〜20の1価の有機基である。)
R2A(OH)2 (A−2)
(式中、R2Aは0又は1個の水酸基を有する炭素数2〜20の2価の有機基である。)
(C)成分として、溶媒を含むチタン含有レジスト下層膜形成用組成物を提供する。
R1B b1R2B b2R3B b3Si(OR0B)(4−b1−b2−b3) (B−1)
(式中、R0Bは炭素数1〜6の炭化水素基であり、R1B、R2B、R3Bは水素原子又は炭素数1〜30の1価の有機基である。また、b1、b2、b3は0又は1であり、1≦b1+b2+b3≦3である。)
L(OR4B)b4(OR5B)b5(O)b6 (B−2)
(式中、R4B、R5Bは炭素数1〜30の有機基であり、b4、b5、b6は0以上の整数、b4+b5+2×b6はLの種類により決まる価数であり、Lは周期律表のIII族、IV族、又はV族の元素で炭素を除くものである。)
被加工体上に塗布型有機下層膜材料を用いて有機下層膜を形成し、該有機下層膜の上に前記チタン含有レジスト下層膜形成用組成物を用いてチタン含有レジスト下層膜を形成し、該チタン含有レジスト下層膜上にレジスト上層膜形成用組成物を用いてレジスト上層膜を形成し、該レジスト上層膜にパターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記チタン含有レジスト下層膜にドライエッチングでパターンを転写し、該パターンが転写されたチタン含有レジスト下層膜をマスクにして前記有機下層膜をドライエッチングでパターン転写し、さらに該パターンが転写された有機下層膜をマスクにして前記被加工体にドライエッチングでパターンを転写するパターン形成方法を提供する。
被加工体上に炭素を主成分とする有機ハードマスクをCVD法で形成し、該有機ハードマスクの上に前記チタン含有レジスト下層膜形成用組成物を用いてチタン含有レジスト下層膜を形成し、該チタン含有レジスト下層膜上にレジスト上層膜形成用組成物を用いてレジスト上層膜を形成し、該レジスト上層膜にパターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記チタン含有レジスト下層膜にドライエッチングでパターンを転写し、該パターンが転写されたチタン含有レジスト下層膜をマスクにして前記有機ハードマスクをドライエッチングでパターン転写し、さらに該パターンが転写された有機ハードマスクをマスクにして前記被加工体にドライエッチングでパターンを転写するパターン形成方法を提供する。
(A)成分として、下記一般式(A−1)で示されるチタン化合物、該チタン化合物を加水分解もしくは縮合、又は加水分解縮合して得られるチタン含有化合物から選ばれる1種類以上に、下記一般式(A−2)で示される2価又は3価のアルコールを作用させて得られるチタン含有化合物、及び、
Ti(OR1A)4 (A−1)
(式中、R1Aは0又は1個の水酸基を有する炭素数1〜20の1価の有機基である。)
R2A(OH)2 (A−2)
(式中、R2Aは0又は1個の水酸基を有する炭素数2〜20の2価の有機基である。)
(C)成分として、溶媒を含むチタン含有レジスト下層膜形成用組成物である。
R1B b1R2B b2R3B b3Si(OR0B)(4−b1−b2−b3) (B−1)
(式中、R0Bは炭素数1〜6の炭化水素基であり、R1B、R2B、R3Bは水素原子又は炭素数1〜30の1価の有機基である。また、b1、b2、b3は0又は1であり、1≦b1+b2+b3≦3である。)
以下、各成分について詳述するが、本発明で用いる成分は下記に限定されるものではない。
本発明の(A)成分の原料の一つとして、下記一般式(A−1)で示されるチタン化合物を挙げることができる。
Ti(OR1A)4 (A−1)
(式中、R1Aは0又は1個の水酸基を有する炭素数1〜20の1価の有機基である。)
R2A(OH)2 (A−2)
(式中、R2Aは0又は1個の水酸基を有する炭素数2〜20の2価の有機基である。)
本発明は、レジスト上層膜パターンとチタン含有レジスト下層膜との間の微細パターンに対するパターン密着性を向上させるため、(B)成分としてケイ素含有化合物を添加してもよい。このケイ素含有化合物の原料の一つとしては、下記一般式(B−1)で示されるシラン化合物を挙げることができる。
R1B b1R2B b2R3B b3Si(OR0B)(4−b1−b2−b3) (B−1)
(式中、R0Bは炭素数1〜6の炭化水素基であり、R1B、R2B、R3Bは水素原子又は炭素数1〜30の1価の有機基である。また、b1、b2、b3は0又は1であり、1≦b1+b2+b3≦3である。)
L(OR4B)b4(OR5B)b5(O)b6 (B−2)
(式中、R4B、R5Bは炭素数1〜30の有機基であり、b4、b5、b6は0以上の整数、b4+b5+2×b6はLの種類により決まる価数であり、Lは周期律表のIII族、IV族、又はV族の元素で炭素を除くものである。)
具体的に使用される酸触媒としては、フッ酸、塩酸、臭化水素酸、硫酸、硝酸、過塩素酸、リン酸、メタンスルホン酸、ベンゼンスルホン酸、トルエンスルホン酸等を挙げることができる。触媒の使用量は、モノマー1モルに対して好ましくは10−6〜10モル、より好ましくは10−5〜5モル、さらに好ましくは10−4〜1モルである。
その他に酸触媒を除去する方法として、イオン交換樹脂による方法や、エチレンオキサイド、プロピレンオキサイド等のエポキシ化合物で中和したのち除去する方法を挙げることができる。これらの方法は、反応に使用された酸触媒に合わせて適宜選択することができる。
さらに、水溶性有機溶媒と水難溶性有機溶媒の混合物を使用することも可能である。
本発明のチタン含有レジスト下層膜形成用組成物に含まれる(C)成分の溶媒としては、上記(A)、(B)成分を溶解できるものであれば特に限定されないが、上記(A)、(B)成分を作製する際に最終的に加える溶媒と同一のものであることが好ましい。具体的には、ブタンジオールモノメチルエーテル、プロピレングリコールモノメチルエーテル、エチレングリコールモノメチルエーテル、ブタンジオールモノエチルエーテル、プロピレングリコールモノエチルエーテル、エチレングリコールモノエチルエーテル、ブタンジオールモノプロピルエーテル、プロピレングリコールモノプロピルエーテル、エチレングリコールモノプロピルエーテル、エチレングリコールモノブチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノプロピルエーテル、ジエチレングリコールモノブチルエーテル、プロピレングリコールモノブチルエーテル、1−ブタノール、2−ブタノール、2−メチル−1−プロパノール、4−メチル−2−ペンタノール、アセトン、テトラヒドロフラン、トルエン、ヘキサン、酢酸エチル、シクロヘキサノン、メチルアミルケトン、プロピレングリコールジメチルエーテル、ジエチレングリコールジメチルエーテル、ジアミルエーテル、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、ピルビン酸エチル、酢酸ブチル、3−メトキシプロピオン酸メチル、3−エトキシプロピオン酸エチル、酢酸t−ブチル、プロピオン酸t−ブチル、プロピレングリコールモノt−ブチルエーテルアセテート、γ−ブチロラクトン、メチルイソブチルケトン、シクロペンチルメチルエーテルなどを例示できる。
本発明のチタン含有レジスト下層膜形成用組成物は、さらに光酸発生剤を添加してもよい。本発明で使用される光酸発生剤として、具体的には、特開2009−126940号公報の[0160]から[0179]段落に記載されている材料を添加することができる。
上記のようにして作製したチタン含有レジスト下層膜形成用組成物を用いた本発明のパターン形成方法の一態様として、
被加工体上に塗布型有機下層膜材料を用いて有機下層膜を形成し、該有機下層膜の上に前記チタン含有レジスト下層膜形成用組成物を用いてチタン含有レジスト下層膜を形成し、該チタン含有レジスト下層膜上にレジスト上層膜形成用組成物を用いてレジスト上層膜を形成し、該レジスト上層膜にパターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記チタン含有レジスト下層膜にパターンを転写し、該パターンが転写されたチタン含有レジスト下層膜をマスクにして前記有機下層膜にパターンを転写し、さらに該パターンが転写された有機下層膜をマスクにして前記被加工体にパターンを転写するパターン形成方法を挙げることができる。
被加工体上に炭素を主成分とする有機ハードマスクをCVD法で形成し、該有機ハードマスクの上に前記チタン含有レジスト下層膜形成用組成物を用いてチタン含有レジスト下層膜を形成し、該チタン含有レジスト下層膜上にレジスト上層膜形成用組成物を用いてレジスト上層膜を形成し、該レジスト上層膜にパターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記チタン含有レジスト下層膜にパターンを転写し、該パターンが転写されたチタン含有レジスト下層膜をマスクにして前記有機ハードマスクにパターンを転写し、さらに該パターンが転写された有機ハードマスクをマスクにして前記被加工体にパターンを転写するパターン形成方法を挙げることができる。
[合成例A−I]
チタンテトライソプロポキシド284gの2−プロパノール(IPA)500g溶液に撹拌しながら、脱イオン水27gのIPA500g溶液を室温で2時間かけて滴下した。得られた溶液に2,4−ジメチル−2,4−オクタンジオール180gを添加し、室温で30分撹拌した。この溶液を減圧下、30℃で濃縮した後、さらに60℃まで加熱し、減圧下、留出物が出なくなるまで加熱を続けた。留出物が見られなくなったところで、4−メチル−2−ペンタノール(MIBC)を1200g加え、40℃、減圧下でIPAが留出しなくなるまで加熱し、チタン含有化合物[A−I]のMIBC溶液1000g(化合物濃度25%)を得た。このもののポリスチレン換算分子量を測定したところMw=1,200であった。
続いて、[A−I]の熱質量減少を測定したところ、図1に示すように、常温における質量が100%であったところから、加熱により250℃になったところでは55%(質量減少−45%)、800℃となったところでは41%(質量減少−59%)となった。このうち、800℃における組成はTiO2が100%であり、このことから、250℃におけるTi含有率を計算すると、
41%/55%×47.87/(47.87+16.00×2)=45%
となった。
従って、250℃で熱分解することで、Ti含有率が45%のチタン含有膜が得られることが明らかになった。
チタンテトライソプロポキシド284gのIPA500g溶液に撹拌しながら、脱イオン水27gのIPA500g溶液を室温で2時間かけて滴下した。得られた溶液に2−メチル−2,4−ペンタンジオール120gを添加し、室温で30分撹拌した。この溶液を減圧下、30℃で濃縮した後、さらに60℃まで加熱し、減圧下、留出物が出なくなるまで加熱を続けた。留出物が見られなくなったところで、MIBCを1200g加え、40℃、減圧下でIPAが留出しなくなるまで加熱し、チタン含有化合物[A−II]のMIBC溶液1000g(化合物濃度20%)を得た。このもののポリスチレン換算分子量を測定したところMw=1,100であった。
チタンテトラブトキシド340gの1−ブタノール(BOH)500g溶液に撹拌しながら、脱イオン水27gのBOH500g溶液を室温で2時間かけて滴下した。得られた溶液に3−メチル−1,3−ヘキサンジオール132gを添加し、室温で30分撹拌した。この溶液を減圧下、40℃で濃縮した後、さらに60℃まで加熱し、減圧下、留出物が出なくなるまで加熱を続けた。留出物が見られなくなったところで、プロピレングリコールメチルエーテルアセテート(以下PGMEA)を1200g加え、50℃、減圧下でBOHが留出しなくなるまで加熱し、チタン含有化合物[A−III]のPGMEA溶液1000g(化合物濃度22%)を得た。このもののポリスチレン換算分子量を測定したところMw=1,250であった。
市販のチタンテトラブトキシドテトラマー243gのBOH500g溶液にピナコール130gを添加し、室温で30分撹拌した。この溶液を減圧下、40℃で濃縮した後、さらに60℃まで加熱し、減圧下、留出物が出なくなるまで加熱を続けた。留出物が見られなくなったところで、PGMEAを1200g加え、50℃、減圧下でBOHが留出しなくなるまで加熱し、チタン含有化合物[A−IV]のPGMEA溶液1000g(化合物濃度22%)を得た。このもののポリスチレン換算分子量を測定したところMw=1,150であった。
市販のチタンテトラブトキシドテトラマー243gのBOH500g溶液に2,5−ジメチル−2,5−ヘキサンジオール150gを添加し、室温で30分撹拌した。この溶液を減圧下、50℃で濃縮した後、さらに60℃まで加熱し、減圧下、留出物が出なくなるまで加熱を続けた。留出物が見られなくなったところで、PGMEAを1200g加え、50℃、減圧下でBOHが留出しなくなるまで加熱し、チタン含有化合物[A−V]のPGMEA溶液1000g(化合物濃度24%)を得た。このもののポリスチレン換算分子量を測定したところMw=1,100であった。
市販のチタンテトラブトキシドテトラマー243gとPGMEA757gを混合して、チタン含有化合物[A−VI]のPGMEA溶液1000gを得た。
続いて、[A−VI]の熱質量減少を測定したところ、図2に示すように、常温における質量が100%であったところから、加熱により250℃になったところでは62%(質量減少−38%)、800℃となったところでは33%(質量減少−67%)となった。このうち、800℃における組成はTiO2が100%であり、このことから、250℃におけるTi含有率を計算すると、
33%/62%×47.87/(47.87+16.00×2)=32%
となった。
従って、250℃で熱分解することで、Ti含有率が32%のチタン含有膜が得られることが明らかになった。尚、図2に示すように、250℃付近での加熱における[A−VI]の熱質量減少は、図1で示した[A−I]の熱質量減少と比べて安定していなかった。
[合成例B−I]
メタノール200g、メタンスルホン酸0.1g及び脱イオン水60gの混合物にメチルトリメトキシシラン68.1gを添加し、12時間、40℃に保持し、加水分解縮合させた。反応終了後、PGMEA200gを加え、副生アルコールを減圧で留去した。そこに、酢酸エチル1000ml及びPGMEA300gを加え、水層を分液した。残った有機層に、イオン交換水100mlを加えて撹拌、静置、分液した。これを3回繰り返した。残った有機層を減圧で濃縮してケイ素含有化合物[B−I]のPGMEA溶液170g(化合物濃度20%)を得た。このもののポリスチレン換算分子量を測定したところMw=2,500であった。
メタノール200g、メタンスルホン酸0.1g及び脱イオン水60gの混合物にメチルトリメトキシシラン27.2g、テトラメトキシシラン22.8g及び2−(4−tertブトキシフェニル)エチルトリメトキシシラン44.8gの混合物を添加し、12時間、40℃に保持し、加水分解縮合させた。反応終了後、PGMEA200gを加え、副生アルコールを減圧で留去した。そこに、酢酸エチル1000ml及びPGMEA300gを加え、水層を分液した。残った有機層に、イオン交換水100mlを加えて撹拌、静置、分液した。これを3回繰り返した。残った有機層を減圧で濃縮してケイ素含有化合物[B−II]のPGMEA溶液280g(化合物濃度20%)を得た。このもののポリスチレン換算分子量を測定したところMw=2,400であった。
上記合成例で得られた(A)成分としてのチタン含有化合物[A−I]〜[A−VI]、(B)成分としてのケイ素含有化合物[B−I]、[B−II]、溶媒を表1に示す割合で混合し、0.1μmのフッ素樹脂製のフィルターで濾過することによって、チタン含有レジスト下層膜形成用組成物をそれぞれ調製し、それぞれSol.1〜12とした。
シリコンウエハー上に、チタン含有レジスト下層膜形成用組成物Sol.1〜12を回転塗布し、250℃で1分間加熱成膜して、膜厚35nmのチタン含有レジスト下層膜Film1〜12を作製した。さらに、比較例として、信越化学工業(株)製スピンオンカーボン膜ODL−50(カーボン含有量80質量%)を塗布して300℃で60秒間加熱して膜厚200nm及びスピンオンハードマスクSHB−A940(ケイ素含有量43質量%)を塗布して250℃で60秒間加熱して膜厚40nmで形成した。
これらの膜を下記のエッチング条件(1)及び(2)でエッチング試験を実施した。その結果を表2に示す。
装置:東京エレクトロン(株)製ドライエッチング装置Telius SP
エッチング条件(1):
チャンバー圧力 10Pa
Upper/Lower RFパワー 500W/300W
CHF3ガス流量 50ml/min
CF4ガス流量 150ml/min
Arガス流量 100ml/min
処理時間 10sec
装置:東京エレクトロン(株)製ドライエッチング装置Telius SP
エッチング条件(2):
チャンバー圧力 2Pa
Upper/Lower RFパワー 1000W/300W
CO2ガス流量 300ml/min
N2ガス流量 100ml/min
Arガス流量 100ml/min
処理時間 15sec
シリコンウエハー上に、信越化学工業(株)製スピンオンカーボン膜ODL−50(カーボン含有量80質量%)を塗布して300℃で60秒間加熱して、膜厚800nmで形成した。その上にチタン含有レジスト下層膜形成用組成物Sol.1〜12を塗布して250℃で60秒間加熱して、膜厚35nmのチタン含有レジスト下層膜Film1〜12を作製した。続いて、当該チタン含有レジスト下層膜上に表3記載のポジ現像用ArFレジスト溶液(PR−1)を塗布し、110℃で60秒間ベークして膜厚100nmのフォトレジスト層を形成した。さらにフォトレジスト膜上に表4記載の液浸保護膜(TC−1)を塗布し90℃で60秒間ベークし膜厚50nmの保護膜を形成した。次いで、これらをArF液浸露光装置((株)ニコン製;NSR−S610C,NA1.30、σ0.98/0.65、35度ダイポール偏光照明、6%ハーフトーン位相シフトマスク)で露光し、100℃で60秒間ベーク(PEB)し、2.38質量%テトラメチルアンモニウムヒドロキシド(TMAH)水溶液で30秒間現像し、50nm1:1のポジ型のラインアンドスペースパターンを得た。続いて、(株)日立ハイテクノロジーズ製電子顕微鏡(CG4000)でパターン倒れを、(株)日立製作所製電子顕微鏡(S−9380)で断面形状を測定した。その結果を表5に示す。
上記パターニング試験で作製したレジストパターンをマスクにしてチタン含有レジスト下層膜の加工を条件(3)でドライエッチングし、次いで条件(4)でドライエッチングしスピンオンカーボン膜にパターンを転写した。得られたスピンオンカーボンパターンの断面形状を(株)日立製作所製電子顕微鏡(S−9380)で確認した。その結果を表6に示す。
装置:東京エレクトロン(株)製ドライエッチング装置Telius SP
エッチング条件(3):
チャンバー圧力 10Pa
Upper/Lower RFパワー 500W/300W
CHF3ガス流量 50ml/min
CF4ガス流量 150ml/min
Arガス流量 100ml/min
処理時間 30sec
装置:東京エレクトロン(株)製ドライエッチング装置Telius SP
エッチング条件(4):
チャンバー圧力 2Pa
Upper/Lower RFパワー 1000W/300W
CO2ガス流量 300ml/min
N2ガス流量 100ml/min
Arガス流量 100ml/min
処理時間 200sec
Claims (10)
- (A)成分として、下記一般式(A−1)で示されるチタン化合物、該一般式(A−1)で示されるチタン化合物のみの加水分解物、前記一般式(A−1)で示されるチタン化合物のみの縮合物、及び前記一般式(A−1)で示されるチタン化合物のみの加水分解縮合物から選ばれる1種類以上と、下記一般式(A−2)で示される2価又は3価のアルコールとの反応物であるチタン含有化合物、及び、
Ti(OR1A)4 (A−1)
(式中、R1Aは0又は1個の水酸基を有する炭素数1〜20の1価の有機基である。)
R2A(OH)2 (A−2)
(式中、R2Aは0又は1個の水酸基を有する炭素数2〜20の2価の有機基である。)
(C)成分として、溶媒を含むものであり、
前記一般式(A−1)で示されるチタン化合物もしくは前記一般式(A−2)で示される2価又は3価のアルコール、又はその両方が1つ以上の3級アルコール構造を含むものであることを特徴とするチタン含有レジスト下層膜形成用組成物。 - さらに、(B)成分として、下記一般式(B−1)で示されるシラン化合物、該一般式(B−1)で示されるシラン化合物の加水分解物、及び前記一般式(B−1)で示されるシラン化合物の加水分解縮合物から選ばれる1種類以上を含むものであることを特徴とする請求項1に記載のチタン含有レジスト下層膜形成用組成物。
R1B b1R2B b2R3B b3Si(OR0B)(4−b1−b2−b3) (B−1)
(式中、R0Bは炭素数1〜6の炭化水素基であり、R1B、R2B、R3Bは水素原子又は炭素数1〜30の1価の有機基である。また、b1、b2、b3は0又は1であり、1≦b1+b2+b3≦3である。) - さらに、(B)成分として、1種以上の下記一般式(B−1)で示されるシラン化合物と、1種以上の下記一般式(B−2)で示される化合物との加水分解物もしくは縮合物、又は加水分解縮合物を含むものであることを特徴とする請求項1に記載のチタン含有レジスト下層膜形成用組成物。
R 1B b1 R 2B b2 R 3B b3 Si(OR 0B ) (4−b1−b2−b3) (B−1)
(式中、R 0B は炭素数1〜6の炭化水素基であり、R 1B 、R 2B 、R 3B は水素原子又は炭素数1〜30の1価の有機基である。また、b1、b2、b3は0又は1であり、1≦b1+b2+b3≦3である。)
L(OR4B)b4(OR5B)b5(O)b6 (B−2)
(式中、R4B、R5Bは炭素数1〜30の有機基であり、b4、b5、b6は0以上の整数、b4+b5+2×b6はLの種類により決まる価数であり、Lは周期律表のIII族、IV族、又はV族の元素で炭素を除くものである。) - 前記一般式(B−2)中のLが、ホウ素、ケイ素、アルミニウム、ガリウム、イットリウム、ゲルマニウム、ジルコニウム、ハフニウム、ビスマス、スズ、リン、バナジウム、ヒ素、アンチモン、ニオブ、タンタル、又はチタンのいずれかの元素であることを特徴とする請求項3に記載のチタン含有レジスト下層膜形成用組成物。
- 前記一般式(B−1)中のR1B、R2B、R3Bのうちの一つ以上が酸不安定基で置換された水酸基又はカルボキシル基を有する有機基であることを特徴とする請求項2乃至請求項4のいずれか一項に記載のチタン含有レジスト下層膜形成用組成物。
- 被加工体上に塗布型有機下層膜材料を用いて有機下層膜を形成し、該有機下層膜の上に請求項1乃至請求項5のいずれか一項に記載のチタン含有レジスト下層膜形成用組成物を用いてチタン含有レジスト下層膜を形成し、該チタン含有レジスト下層膜上にレジスト上層膜形成用組成物を用いてレジスト上層膜を形成し、該レジスト上層膜にパターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記チタン含有レジスト下層膜にドライエッチングでパターンを転写し、該パターンが転写されたチタン含有レジスト下層膜をマスクにして前記有機下層膜をドライエッチングでパターン転写し、さらに該パターンが転写された有機下層膜をマスクにして前記被加工体にドライエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に炭素を主成分とする有機ハードマスクをCVD法で形成し、該有機ハードマスクの上に請求項1乃至請求項5のいずれか一項に記載のチタン含有レジスト下層膜形成用組成物を用いてチタン含有レジスト下層膜を形成し、該チタン含有レジスト下層膜上にレジスト上層膜形成用組成物を用いてレジスト上層膜を形成し、該レジスト上層膜にパターンを形成し、該パターンが形成されたレジスト上層膜をマスクにして前記チタン含有レジスト下層膜にドライエッチングでパターンを転写し、該パターンが転写されたチタン含有レジスト下層膜をマスクにして前記有機ハードマスクをドライエッチングでパターン転写し、さらに該パターンが転写された有機ハードマスクをマスクにして前記被加工体にドライエッチングでパターンを転写することを特徴とするパターン形成方法。
- 前記被加工体が、半導体回路の一部又は全部が形成されている半導体装置基板、金属膜、金属炭化膜、金属酸化膜、金属窒化膜、金属酸化炭化膜又は金属酸化窒化膜を有するものであることを特徴とする請求項6又は請求項7に記載のパターン形成方法。
- 前記被加工体を構成する金属がケイ素、チタン、タングステン、ハフニウム、ジルコニウム、クロム、ゲルマニウム、銅、アルミニウム、インジウム、ガリウム、ヒ素、パラジウム、鉄、タンタル、イリジウム、モリブデン又はこれらの合金であることを特徴とする請求項6乃至請求項8のいずれか一項に記載のパターン形成方法。
- 前記レジスト上層膜のパターン形成の方法として、波長が300nm以下の光又はEUV光を用いたリソグラフィー法、電子線直接描画法、誘導自己組織化法、及びナノインプリンティングリソグラフィー法のいずれかの方法を用いることを特徴とする請求項6乃至請求項9のいずれか一項に記載のパターン形成方法。
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