JP6174731B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP6174731B2 JP6174731B2 JP2016015562A JP2016015562A JP6174731B2 JP 6174731 B2 JP6174731 B2 JP 6174731B2 JP 2016015562 A JP2016015562 A JP 2016015562A JP 2016015562 A JP2016015562 A JP 2016015562A JP 6174731 B2 JP6174731 B2 JP 6174731B2
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- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 86
- 230000015556 catabolic process Effects 0.000 description 18
- 230000005684 electric field Effects 0.000 description 14
- 230000006378 damage Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
図7と類似するに、図8は、本発明の他の実施形態に従った発光装置60の電気回路を示している。導電金属13に接続される浮遊導電性55を形成することに代えて、1つの接地導電線65が、最高電位を有するLEDセル11と最低電位を有するLEDセル11との間に形成され、接地導電線65は外部に接続されることにより接地されている。
A1 第1側面
A2 第2側面
B LED
B1 第1側面
B2 第2側面
C LED
C1 LED
C2 LED
C3 LED
10 発光装置
11 LEDセル
12 破壊領域
13 導電金属
15 基板
17 第1半導体層
19 第2半導体層
21 第2絶縁層
23 第1絶縁層
40 発光装置
41 絶縁壁
47 活性層
50 発光装置
55 浮遊導電線
60 発光装置
65 接地導電線
75 ESD破壊領域
80 発光装置
90 発光装置
105 ボンディングパッド
133 電流ブロック層
135 透明な導電層
Claims (9)
- 基板上に複数の発光ダイオード(LED)セルを有する直列接続のLEDアレイを含む発光装置であって、
前記直列接続のLEDアレイは、第1LEDセルと、第2LEDセルと、第1LEDセルと第2LEDセルとの間に挿入された少なくとも3つのLEDセルを有する直列接続のLEDサブアレイとを含み、
前記第1LEDセルと、前記LEDサブアレイと、前記第2LEDセルとは互いに電気的に直列接続され、
前記LEDセルの各々は、第1半導体層と、第2半導体層と、前記第1半導体層と前記第2半導体層の間に位置する活性層と含み、
前記第1LEDセル及び前記第2LEDセルの各々は第1側面及び第2側面を有し、前記第1LEDセル及び前記第2LEDセルの前記第1側面が前記LEDサブアレイに隣接し、前記第1LEDセルの前記第2側面が前記第2LEDセルの前記第2側面に隣接し、
前記第1LEDセルの前記第1半導体層と前記第2LEDセルの前記第1半導体層は、隣接する2つの前記第2側面の間の距離が15〜50μmであり、
前記発光装置は、
前記第1LEDセルの前記第2側面と前記第2LEDセルの前記第2側面との間のトレンチと、
隣接する前記第1LEDセルと前記LEDサブアレイとの間、隣接する前記第2LEDセルと前記LEDサブアレイとの間、および、前記LEDサブアレイの隣接するLEDセルの間に形成され、前記複数のLEDセルを直列接続させる導電金属とを有し、
前記導電金属の各々は拡張部を更に含み、前記拡張部は前記導電金属の線幅より大きい半径を有する端子を備えた、発光装置。 - 前記第1LEDセル上の前記導電金属と前記第2LEDセル上の前記導電金属との最小間隔は80μmより大きい、請求項1に記載の発光装置。
- 前記LEDセルの前記第1半導体層は丸みを帯びた角を有する、請求項1に記載の発光装置。
- 前記丸みを帯びた角は15μmより小さくない曲率半径を有するとともに/或いは該丸みを帯びた角は前記第2側面に位置する、請求項3に記載の発光装置。
- 前記直列接続のLEDアレイは少なくとも8つのLEDセルを有し、該LEDアレイは2つのブランチを更に有するとともに/或いは該LEDアレイにおいて連続されたいずれか2つのLEDセルはそれらの配列方向を変えることができる、請求項1に記載の発光装置。
- 通常の動作電圧より高いサージ電圧によって前記発光装置が破壊されることを防止するように、前記トレンチを被覆する保護構造を更に含む、請求項1に記載の発光装置。
- 前記保護構造は、前記トレンチ内を充填する第1絶縁層と、前記第1絶縁層上の第2絶縁層とを有する、請求項6に記載の発光装置。
- 隣接する2つの前記第2側面の前記トレンチ内に位置し、前記導電金属と接続する金属構造を更に含む、請求項1に記載の発光装置。
- 前記金属構造は、前記第1LEDセル上の前記導電金属と接続する第1金属層と、前記第2LEDセル上の前記導電金属と接続する第2金属層とを含む、請求項8に記載の発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US37819110P | 2010-08-30 | 2010-08-30 | |
US61/378,191 | 2010-08-30 |
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JP2011185857A Division JP5917859B2 (ja) | 2010-08-30 | 2011-08-29 | 発光装置 |
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JP2017133085A Division JP6772109B2 (ja) | 2010-08-30 | 2017-07-06 | 発光ダイオード装置 |
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JP2016122849A JP2016122849A (ja) | 2016-07-07 |
JP6174731B2 true JP6174731B2 (ja) | 2017-08-02 |
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JP2011185857A Active JP5917859B2 (ja) | 2010-08-30 | 2011-08-29 | 発光装置 |
JP2016015562A Active JP6174731B2 (ja) | 2010-08-30 | 2016-01-29 | 発光装置 |
JP2017133085A Active JP6772109B2 (ja) | 2010-08-30 | 2017-07-06 | 発光ダイオード装置 |
JP2020164358A Active JP7186754B2 (ja) | 2010-08-30 | 2020-09-30 | 発光装置 |
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Country Status (6)
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US (4) | US9171883B2 (ja) |
JP (4) | JP5917859B2 (ja) |
KR (6) | KR101616094B1 (ja) |
CN (2) | CN102386175B (ja) |
DE (1) | DE102011053093B4 (ja) |
TW (5) | TWI533432B (ja) |
Cited By (1)
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JP7167037B2 (ja) | 2017-09-08 | 2022-11-08 | 日本電子株式会社 | 自動分析装置および検体分注機構の異常検出方法 |
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CN105977369A (zh) * | 2016-05-26 | 2016-09-28 | 合肥彩虹蓝光科技有限公司 | 一种小电流高光效hv-led芯片 |
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