JP6167913B2 - 蛍光体及びそれを用いた発光装置 - Google Patents
蛍光体及びそれを用いた発光装置 Download PDFInfo
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- JP6167913B2 JP6167913B2 JP2014007918A JP2014007918A JP6167913B2 JP 6167913 B2 JP6167913 B2 JP 6167913B2 JP 2014007918 A JP2014007918 A JP 2014007918A JP 2014007918 A JP2014007918 A JP 2014007918A JP 6167913 B2 JP6167913 B2 JP 6167913B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 143
- 239000000203 mixture Substances 0.000 claims description 29
- 229910052791 calcium Inorganic materials 0.000 claims description 24
- 229910052712 strontium Inorganic materials 0.000 claims description 23
- 229910052788 barium Inorganic materials 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 21
- 230000005284 excitation Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- 229910052771 Terbium Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052693 Europium Inorganic materials 0.000 claims description 5
- 229910052765 Lutetium Inorganic materials 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910020068 MgAl Inorganic materials 0.000 claims description 4
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 4
- 102100032047 Alsin Human genes 0.000 claims description 3
- 101710187109 Alsin Proteins 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 claims description 2
- RLMMPAFGVXFLEB-UHFFFAOYSA-N O[Si](O)(O)Cl.P Chemical compound O[Si](O)(O)Cl.P RLMMPAFGVXFLEB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 23
- 238000000034 method Methods 0.000 description 17
- 239000002994 raw material Substances 0.000 description 14
- 238000002156 mixing Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- -1 nitrogen-containing compound Chemical class 0.000 description 10
- 238000007789 sealing Methods 0.000 description 10
- 238000000295 emission spectrum Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 238000009877 rendering Methods 0.000 description 7
- 229910052684 Cerium Inorganic materials 0.000 description 6
- 238000000695 excitation spectrum Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000003929 acidic solution Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910018250 LaSi Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 150000004763 sulfides Chemical class 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910018251 LaSi 2 Inorganic materials 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 240000007320 Pinus strobus Species 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HIGRAKVNKLCVCA-UHFFFAOYSA-N alumine Chemical class C1=CC=[Al]C=C1 HIGRAKVNKLCVCA-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011085 pressure filtration Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Chemical & Material Sciences (AREA)
- Led Device Packages (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
Description
さらにまた他の実施の形態に係る蛍光体によれば、一般式がLa3Si6N11:Ceで表される蛍光体であって、少なくともホウ素を含むことができる。
(粒径)
(製造方法)
(発光装置)
(発光素子)
(蛍光体)
(封止部材)
[実施例1]
窒化ランタン(LaN)・・・・5.99g
窒化珪素(Si3N4)・・・・3.57g
窒化硼素(BN)・・・・0.05g
フッ化セリウム(CeF3)・・・・0.39g
[実施例2〜3、比較例1]
[参考例5、実施例6、参考例7、比較例4]
[実施例1〜3、比較例1を用いた発光装置]
102…蛍光体
103…封止部材
104…導電性ワイヤ
110…パッケージ
111…リード電極
112…凹部の底面
100…発光装置
Claims (10)
- 一般式がMxCeySi6-zBzN8+wで表される蛍光体であり、Mは、La,Y,Tb,Luの群から選ばれる少なくとも1種類以上の元素であり、前記一般式中のw、x、y及びzは、それぞれ、
2.0<w<4.0、
2.33<x<3.0、
0.06<y<0.5、
0<z<0.3
を満たし、
前記蛍光体が、さらに100〜3860ppm未満の酸素を含んでなることを特徴とする蛍光体。 - 請求項1に記載の蛍光体であって、
前記蛍光体が、さらに10〜10000ppmのフッ素を含んでなることを特徴とする蛍光体。 - 請求項1または2に記載の蛍光体であって、
前記蛍光体の50重量%以上が結晶相を有していることを特徴とする蛍光体。 - 請求項1〜3のいずれか一に記載の蛍光体であって、
粒径が2μm〜30μmであることを特徴とする蛍光体。 - 紫外から可視光の短波長領域の光を発する励起光源と、
前記励起光源からの光の一部を吸収して、蛍光を発光可能な請求項1〜4のいずれか一に記載の蛍光体である第一蛍光体と、
前記第一蛍光体を含有する波長変換部材と、
を備えることを特徴とする発光装置。 - 請求項5に記載の発光装置であって、
前記励起光源が、420nm以上470nm以下の範囲内に発光ピーク波長を有する発光素子である発光装置。 - 請求項5または6に記載の発光装置であって、さらに
前記励起光源からの光の少なくとも一部を吸収し、前記第一蛍光体とは異なる発光ピーク波長を有する蛍光を発する1種類以上の第二蛍光体を備えることを特徴とする発光装置。 - 請求項7に記載の発光装置であって、
前記第二蛍光体が、(Ca1-xSrx)AlSiN3:Eu(0≦x≦1.0)、(Ca1-x-ySrxBay)2Si5N8:Eu(0≦x≦1.0、0≦y≦1.0)、K2(Si1-x-yGexTiy)F6:Mn(0≦x≦1.0、0≦y≦1.0)から選択された少なくとも一種の組成を有する蛍光体を含む発光装置。 - 請求項7または8に記載の発光装置であって、
前記第二蛍光体が、(Ca,Sr,Ba)2SiO4:Eu、Ca3Sc2Si3O12:Ce、クロロシリケート蛍光体、(Ca,Sr,Ba)3Si6O9N4:Eu、(Ca,Sr,Ba)3Si6O12N2:Eu、(Ca,Sr,Ba)Si2O2N2:Eu、β型サイアロン蛍光体、(Y,Lu)3(Al,Ga)5O12:Ce、SrGa2S4:Eu、CaSc2O4:Ceから選択された少なくとも一種の組成を有する蛍光体を含む発光装置。 - 請求項7から9のいずれか一項に記載の発光装置であって、
前記第二蛍光体が、(Sr,Ca,Ba)Al2O4:Eu、(Sr,Ca,Ba)4Al14O25:Eu、(Ba,Sr,Ca)MgAl10O17:Eu、BaMgAl14O25:Eu,Tb,Sm、(Ba,Sr,Ca)MgAl10O17:Eu,Mn、SrGa2S4:Ce、CaGa2S4:Ce、(Ba,Sr,Ca,Mg)2SiO4:Eu、(Sr,Ca,Ba,Mg)10(PO4)6Cl2:Euから選択された少なくとも一種の組成を有する蛍光体を含む発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014007918A JP6167913B2 (ja) | 2013-04-26 | 2014-01-20 | 蛍光体及びそれを用いた発光装置 |
DE102014207776.1A DE102014207776B4 (de) | 2013-04-26 | 2014-04-25 | Leuchtstoff, den Leuchtstoff enthaltende Lichtemissionsvorrichtung und Leuchtstoffherstellungsverfahren |
US14/261,691 US9705049B2 (en) | 2013-04-26 | 2014-04-25 | Phosphor, light-emitting apparatus including the same, and phosphor production method |
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JP2013094772 | 2013-04-26 | ||
JP2013094772 | 2013-04-26 | ||
JP2014007918A JP6167913B2 (ja) | 2013-04-26 | 2014-01-20 | 蛍光体及びそれを用いた発光装置 |
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JP2017070274A Division JP6288343B2 (ja) | 2013-04-26 | 2017-03-31 | 蛍光体及びそれを用いた発光装置 |
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JP2014224231A JP2014224231A (ja) | 2014-12-04 |
JP6167913B2 true JP6167913B2 (ja) | 2017-07-26 |
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Country Status (3)
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---|---|
US (1) | US9705049B2 (ja) |
JP (1) | JP6167913B2 (ja) |
DE (1) | DE102014207776B4 (ja) |
Families Citing this family (11)
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JP6102763B2 (ja) * | 2013-04-26 | 2017-03-29 | 日亜化学工業株式会社 | 蛍光体及びそれを用いた発光装置並びに蛍光体の製造方法 |
WO2017170609A1 (ja) * | 2016-03-29 | 2017-10-05 | 三菱化学株式会社 | 蛍光体、発光装置、照明装置及び画像表示装置 |
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