JP6148603B2 - 反射防止基板構造およびその製造方法 - Google Patents
反射防止基板構造およびその製造方法 Download PDFInfo
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- JP6148603B2 JP6148603B2 JP2013227336A JP2013227336A JP6148603B2 JP 6148603 B2 JP6148603 B2 JP 6148603B2 JP 2013227336 A JP2013227336 A JP 2013227336A JP 2013227336 A JP2013227336 A JP 2013227336A JP 6148603 B2 JP6148603 B2 JP 6148603B2
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- 239000000758 substrate Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 22
- 239000011807 nanoball Substances 0.000 claims description 21
- 230000005660 hydrophilic surface Effects 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000004381 surface treatment Methods 0.000 claims description 6
- 239000004408 titanium dioxide Substances 0.000 claims description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 41
- 230000001066 destructive effect Effects 0.000 description 8
- 239000000084 colloidal system Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
Description
100 反射防止基板構造
110 シリコンウエハ
110a 単結晶シリコンシリコンウエハ基板
112 第1粗表面
112a 表面
120、120a 反射防止フィルム
122 第2粗表面
122a 親水性表面
130 コロイド溶液
132 溶液
134 ナノボール
T 厚さ
Claims (15)
- 規則的且つ連続的なピラミッド構造である第1粗表面を有するシリコンウエハを提供することと、
前記シリコンウエハの上に、前記第1粗表面を共形的に覆う反射防止フィルムを形成することと、
前記反射防止フィルムに表面処理を行い、前記反射防止フィルムの前記シリコンウエハから相対的に離れた側に親水性表面を形成することと、
前記反射防止フィルムの前記親水性表面に、溶液および前記親水性表面に付着できる複数のナノボールを含むコロイド溶液を滴下することと、
前記ナノボールをエッチングマスクとして使用し、前記反射防止フィルムの前記親水性表面にエッチングプロセスを行って、前記第1粗表面よりも小さい粗さを有し、かつ輪郭が不規則的且つ連続的なピラミッド構造である第2粗表面を形成することと
を含む反射防止基板構造の製造方法。 - 前記シリコンウエハを提供する前記ステップが、
単結晶シリコンのシリコンウエハ基板を提供することと、
前記単結晶シリコンのシリコンウエハ基板の表面にエッチングプロセスを行い、前記第1粗表面を有する前記シリコンウエハを形成することと
を含む請求項1に記載の反射防止基板構造の製造方法。 - 前記シリコンウエハが、多結晶シリコンのシリコンウエハである請求項1に記載の反射防止基板構造の製造方法。
- 前記反射防止フィルムの形成方法が、プラズマ化学気相成長法、物理蒸着法または物理スパッタリング法を含む請求項1に記載の反射防止基板構造の製造方法。
- 前記反射防止フィルムの材料が、窒化ケイ素、酸化アルミニウム、硫化亜鉛、フッ化マグネシウムまたは二酸化チタンを含む請求項1に記載の反射防止基板構造の製造方法。
- 前記表面処理が、酸素プラズマ処理を行うことを含む請求項1に記載の反射防止基板構造の製造方法。
- 前記酸素プラズマ処理の酸素流量が、1sccm〜100sccmの間であり、処理時間が、20秒〜2000秒の間であり、エネルギーが、20mW/cm2〜500mW/cm2の間である請求項6に記載の反射防止基板構造の製造方法。
- 前記溶液が、メタノールまたは水を含む請求項1に記載の反射防止基板構造の製造方法。
- 前記各ナノボールの材料が、ポリスチレンを含む請求項1に記載の反射防止基板構造の製造方法。
- 前記各ナノボールの粒径が、100nm〜1000nmの間である請求項1に記載の反射防止基板構造の製造方法。
- 前記エッチングプロセスが、反応性イオンエッチングプロセスである請求項1に記載の反射防止基板構造の製造方法。
- 前記反射防止フィルムの厚さが、100nm〜1000nmの間である請求項1に記載の反射防止基板構造の製造方法。
- 規則的且つ連続的なピラミッド構造である第1粗表面を有するシリコンウエハと、
前記シリコンウエハの上に配置され、前記第1粗表面を覆う反射防止フィルムと
を含み、前記反射防止フィルムが、第2粗表面を有し、前記第2粗表面の粗さが、前記第1粗表面の粗さよりも小さく、前記第2粗表面が、親水性を有し、かつ前記第2粗表面の輪郭が不規則的且つ連続的なピラミッド構造である反射防止基板構造。 - 前記シリコンウエハが、多結晶シリコンのシリコンウエハまたはエッチングされた単結晶シリコンのシリコンウエハを含む請求項13に記載の反射防止基板構造。
- 前記反射防止フィルムの材料が、窒化ケイ素、酸化アルミニウム、硫化亜鉛、フッ化マグネシウムまたは二酸化チタンを含む請求項13に記載の反射防止基板構造。
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TW101145833A TWI564585B (zh) | 2012-12-06 | 2012-12-06 | 抗反射基板結構及其製作方法 |
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US (2) | US9224893B2 (ja) |
JP (1) | JP6148603B2 (ja) |
CN (1) | CN103854996B (ja) |
TW (1) | TWI564585B (ja) |
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CN105470341A (zh) * | 2014-09-05 | 2016-04-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种廉价无序宽谱广角减反结构及其制作方法 |
US9293611B1 (en) * | 2014-09-24 | 2016-03-22 | Huey-Liang Hwang | Solar cell structure and method for fabricating the same |
TWI629497B (zh) * | 2017-03-31 | 2018-07-11 | 友達光電股份有限公司 | 抗反射光學膜片 |
JP2020107402A (ja) * | 2018-12-26 | 2020-07-09 | 市光工業株式会社 | 表面処理方法及びアウターカバー |
WO2020183914A1 (ja) * | 2019-03-14 | 2020-09-17 | 富士フイルム株式会社 | 表面微細構造および表面微細構造を備えた基体 |
US11305988B2 (en) * | 2020-09-01 | 2022-04-19 | Aac Acoustic Technologies (Shenzhen) Co., Ltd. | Method for preparing silicon wafer with rough surface and silicon wafer |
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US10236395B2 (en) | 2019-03-19 |
US9224893B2 (en) | 2015-12-29 |
US20160079449A1 (en) | 2016-03-17 |
TW201423141A (zh) | 2014-06-16 |
TWI564585B (zh) | 2017-01-01 |
CN103854996A (zh) | 2014-06-11 |
US20140159187A1 (en) | 2014-06-12 |
JP2014115634A (ja) | 2014-06-26 |
CN103854996B (zh) | 2016-08-31 |
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