JP6134759B2 - 集光太陽束下で使用される太陽光発電部品 - Google Patents
集光太陽束下で使用される太陽光発電部品 Download PDFInfo
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- JP6134759B2 JP6134759B2 JP2015189457A JP2015189457A JP6134759B2 JP 6134759 B2 JP6134759 B2 JP 6134759B2 JP 2015189457 A JP2015189457 A JP 2015189457A JP 2015189457 A JP2015189457 A JP 2015189457A JP 6134759 B2 JP6134759 B2 JP 6134759B2
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- layer
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- conductive material
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- film photovoltaic
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 18
- 239000011358 absorbing material Substances 0.000 claims description 15
- 229910004613 CdTe Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000011787 zinc oxide Substances 0.000 claims description 9
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 7
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- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical class [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 4
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- 238000004070 electrodeposition Methods 0.000 claims description 2
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- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052714 tellurium Inorganic materials 0.000 description 4
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
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- 239000005083 Zinc sulfide Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
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- 239000011701 zinc Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
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- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 230000007935 neutral effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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- 238000013341 scale-up Methods 0.000 description 1
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- 150000004763 sulfides Chemical class 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
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- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Description
バック電気接点を形成する導電材料からなる少なくとも1つの第1の層と、太陽光スペクトル内で吸収性の材料からなる第2の層と、フロント電気接点を形成する透明導電材料からなる第3の層と、を含む太陽光発電デバイスの製造に適した一組の層と;
前記バック電気接点と前記フロント電気接点間に配置され、それぞれが、前記一組の層のそれぞれの層をスタックして太陽光発電マイクロ電池を形成するゾーンを画定する開口を複数含む電気絶縁層と;
透明導電材料からなる前記第3の層と電気的に接触し、前記第3の層との前記フロント電気接点を形成し、前記バック電気接点と前記フロント電気接点によって電気的に並列に接続された前記形成された太陽光発電マイクロ電池のそれぞれに対して、周囲電気接点を形成するように構成された、導電材料からなる層と;を備える太陽光発電部品に関する。
例えば、透明導電材料からなる前記第3の層と電気的に接触する導電材料からなる前記層を形成する前記導電材料は、アルミニウム、モリブデン、銅、ニッケル、金、銀、炭素および炭素誘導体、白金、タンタルおよびチタンから選択された金属である。
他の実施形態では、前記絶縁層は、複数の開口を形成するように構成された絶縁材料からなる層を備える。
例えば、前記絶縁材料は、シリカまたはアルミナなどの酸化物、窒化ケイ素などの窒化物および硫化亜鉛などの硫化物から選択される。
導電材料からなる前記第1の層を基板上に堆積して前記バック電気接点を形成するステップと、
前記太陽光発電デバイスに対して不活性な材料、好適には電気絶縁体からなり、複数の開口を形成するように構成された層を堆積するステップと、
前記吸収材料を前記開口に堆積して、吸収材料からなり不連続な前記第2の層を形成する選択的なステップと、
前記不活性層の開口サイズ以下の開口を形成するように構成された導電材料からなる前記層を堆積するステップと、
前記フロント電気接点を形成するように構成された導電材料からなる前記層と電気的に接触する透明導電材料からなる前記第3の層を堆積するステップと、を備える。
導電材料からなる前記第1の層を基板上に堆積して前記バック電気接点を形成するステップと、
不連続で複数の開口を含む吸収材料からなる前記第2の層を堆積するステップと、
前記太陽光発電デバイスに対して不活性な材料、好適には電気絶縁体を前記開口内に堆積して、開口を有する不連続な不活性層を前記吸収材料の位置に形成する選択的なステップと、
前記不活性層の開口サイズ以下の開口を形成するように構成された導電材料からなる前記層を堆積するステップと、
前記フロント電気接点を形成するように構成された導電材料からなる前記層と電気的に接触する透明導電材料からなる前記第3の層を堆積するステップと、を備える。
前記バック電気接点を形成するように導電材料からなる前記第1の層と、吸収材料からなる前記第2の層と、を基板上に堆積するステップと、
その形状が前記太陽光発電マイクロ電池のそれぞれの形状を画定することになる1つまたは複数のパッドを形成するように構成されたレジストの層を堆積するステップと、
絶縁材料からなる層と導電材料からなる層とを前記レジスト層上に堆積するステップと、
前記レジストを取り除いて、絶縁材料からなる前記構成層と導電材料からなる前記構成層を得、さらに、導電材料からなる前記構成層と電気的に接触する透明導電材料からなる前記第3の層を堆積して前記フロント電気接点を形成するステップと、を備える。
透明導電材料からなる前記第3の層を透明基板上に堆積して前記フロント電気接点を形成するステップと、
その形状が前記太陽光発電マイクロ電池のそれぞれの形状を画定することになる複数のパッドを形成するように構成されたレジストの層を堆積するステップと、
導電材料からなる層と絶縁材料からなる層とを前記レジスト層上に堆積するステップと、
前記レジストを取り除いて、絶縁材料からなる前記構成層と導電材料からなる前記構成層を得、さらに、吸収材料からなる前記層を堆積するステップと、
導電材料からなる前記第1の層を堆積して前記バック電気接点を形成するステップと、を備える。好都合なことに、吸収材料からなる前記層は選択的に形成され、また不連続層を形成する。
アイランド10は、バック電気接点とフロント電気接点間に配置された電気絶縁層103を備える。絶縁層103は不連続であり、アイランド10のマイクロ電池または活性太陽光発電ゾーン100の形状と寸法を画定する1つまたは複数の開口を形成する。これらの開口外での暗電流密度は実際には無視できる。開口内では、半導体層のセットによる接合が形成される。フロント電気接点とバック電気接点によって光生成電荷キャリアが収集される。従って、本出願人は、マイクロ電池(その断面は前記絶縁層に形成された開口によって画定される)の断面の少なくとも1つの寸法が数百μm未満となるようにマイクロ電池の寸法を選択することによって、各マイクロ電池で光生成された電荷キャリアを、該接点に寄与する透明導電体層の抵抗によるロスを制限しながら、フロント電気接点によって収集できることを実証した。このように形成された配列によって、集電グリッドの使用を必要としない、集光太陽束下での応用に適した太陽電池が形成される。本出願人は、この新規な構造によって、従来の実施形態で現在までに提案された集光限界を大きく超える40,000sunsを上回る集光下で、集光がなければ効率20%の電池に対して、理論的には効率30%を達成できることを実証した。
図1A〜図1Cでは、マイクロ電池100は、例えば、面積が好適には10−2cm2未満の、さらに10−4cm2未満の、さらには10−8cm2と小さな円形断面を有しており、そのために、電荷キャリアを迅速に収集できる。該面積の下限は、技術的な考察および吸収材料の層で光生成されたキャリアの可動性と寿命特性とに関連する。
前記マイクロ電池の断面は種々の形状を取り得る。例えば、横寸法が典型的には1mm未満、好適には100μm、さらには数μm以下という非常に小さい帯状の細長い形状の断面が考えられる。該接合で光生成された電荷キャリアは、次に、該帯の短辺寸法に沿ったフロント接点を経由して収集され、フロント接点の透明導電材料からなる層で形成された窓層の抵抗効果を再度制限する。この場合、集光システムは、アイランドの構造を受けて、1つまたは複数の列の光の焦点を1つまたは複数の帯に合わせるように改良されるであろう。アイランドが複数の帯を備える場合、これらの帯は、恐らく、バック接点とフロント接点の両方によって電気的に並列に接続されるであろう。断面の一寸法が小さい場合、典型的には数百μm未満の場合には、例えば細長い蛇行形状などのその他の形状も電荷キャリアの収集用として考えられる。特に、これらの寸法は恐らく、使用材料に応じて、特に側方の電気再結合の影響を最小化するように最適化されるであろう。
図2に示す一実施形態では、複数のアイランド(10A、10B)を電気的に接続してより大きな太陽電池を形成してもよい。これらのアイランドは、例えば共通の基板109上に形成される。図2では、単一のマイクロ電池100がアイランド毎に示されが、もちろん、各アイランドは複数のマイクロ電池を備えていてもよい。この実施形態では、図1Aおよび図1Bのそれのように、フロント電気接点は、導電材料からなる層(104A、104B)と、この実施形態では、すべてのアイランドを被覆する窓層(106A、106B)と、を備える。この実施形態では、これらのアイランドは、例えば第2のアイランド10Bのバック電気接点と電気的に接触する第1のアイランド10Aの窓層106Aによって直列に接続される。図2が動作原理を示す図であることは理解されるであろう。層102Aの導電率が高い場合には、例えば、これらのアイランドが接続されるレベルまで絶縁層103Aを延長して層106Aを絶縁することが必要であり得る。
図4Cは、非晶質シリコン、およびまたは多形シリコン、微晶質シリコン、結晶シリコンおよびナノ結晶シリコンを含むシリコン薄層系を用いた太陽光発電マイクロ電池の形成に適した一組の層を示す。図4Cの実施形態では、接合は、それぞれ、pドープ非晶質シリコン、真性非晶質シリコンおよびnドープ非晶質シリコンからなり、可視領域において互いに吸収性である、3つの層の合計の厚みが約2μmの、層114、層115および層116によって形成される。該接合を形成する層は、バック電気接点101(例えばアルミニウムまたは銀からなる金属層)と、例えばSiO2からなり厚みが数百nm例えば400nmの構成絶縁層103と、の間に配置される。前記絶縁層と同様に構成され、実質的に同じ厚みの前面金属層104は、前記構成絶縁層103上に配置され、この前面金属層104上には、例えばSnO2などの透明導電材料からなる窓層106が設けられ、この窓層106の厚みも数百nmである。再度になるが、この実施形態ではトップダウンプロセスが用いられ、基板は、入射光に暴露される電池側に位置する。
変形例では、前記吸収材料の選択的な堆積は、例えば高温冶金法などの既知の技術で得られる材料粒の堆積により、あるいは、中間基板上への予備的な気相堆積法での粒子生成により実現できる。粒径が1〜数μmのCIGS粒をこうして調製し、本発明による基板上に直接堆積してもよい。あるいは、光起電接合を形成するように意図された層の全てまたは一部を、従来技術(例えば同時蒸発または真空スパッタリング)を用いて固体パネルやの形に事前にスタックしてもよく、次に、製造されるマイクロ電池のサイズに適した寸法の多層スタック部分を基板上に選択的に堆積する。
この方程式の解が得られる境界条件は、周囲接点の場合、
該電池の半径a、該電池への印加電圧Vとすると、ψ(a)=V
対称性により電池中心では電流が流れないことから、∂ψ/∂r(0)=0である。
図6は、マイクロ電池の周囲接点を確保する窓層の種々のシート抵抗に対して、入射電力密度(またはsunの単位の集光係数)の関数として求めた効率曲線を示す。このシミュレーションを実行するために、円形断面のマイクロ電池の半径は18μm(すなわち、面積が10−5cm2)とし、CIGS系参照電池(集光なし)の電気的パラメータ、すなわち、短絡回路電流Jsc=35.5mA/cm2、ダイオード理想係数n=1.14および暗電流Jo=2.1×10−9mA/cm2を採用した(例えば、I.Repinsらによる、33rd IEEE Photovoltaic Specialists Conference,2008,1−6(2008)、またはI.Repinsらによる、Progress in Photovoltaics16,235−239(2008)で評価されたパラメータ)。
Claims (14)
- 薄膜太陽光発電部品の製造方法であって、基板(109)上に、
バック電気接点を形成する導電材料からなる第1の層(101)と;
複数の開口を形成するように構成された電気絶縁材料からなる電気絶縁層(103、103A)と;
不連続な吸収層(102)を形成するように選択的に堆積される太陽光スペクトルの吸収材料と;
前記電気絶縁層の開口と同じサイズの開口を形成するように構成された導電材料からなる第2の層(104)と;
前記導電材料からなる第2の層(104)と電気的に接触し、フロント電気接点を形成する透明導電材料からなる第3の層(106)と;を堆積することを備え、
前記薄膜太陽光発電部品の各層は、20μm未満の厚さを有する層を形成するように気相または液相から堆積することにより得られ、
前記吸収層、導電材料からなる前記第1の層および透明導電材料からなる前記第3の層は、複数の太陽光発電マイクロ電池を形成するようにスタックされ、各太陽光発電マイクロ電池の形状および寸法が前記電気絶縁層の各開口によって画定されることを特徴とする薄膜太陽光発電部品の製造方法。 - 前記吸収材料は、前記電気絶縁層の前記開口内に選択的に堆積されることを特徴とする請求項1に記載の薄膜太陽光発電部品の製造方法。
- 前記太陽光発電マイクロ電池に対して不活性な材料からなる層(108)であって、複数の開口を形成するように構成される不活性層を堆積するステップをさらに備え、
前記吸収材料は、前記不連続な吸収層(102)を形成するように前記不活性層の開口内に選択的に堆積され、
前記電気絶縁層は、前記不活性層(108)の開口サイズ以下の開口を形成するように構成されることを特徴とする請求項1に記載の薄膜太陽光発電部品の製造方法。 - 前記吸収材料は、電着により選択的に堆積されることを特徴とする請求項2または3に記載の薄膜太陽光発電部品の製造方法。
- 前記電気絶縁材料は、前記構成された絶縁層を形成するように前記不連続な吸収層の前記開口内に選択的に堆積されることを特徴とする請求項1に記載の薄膜太陽光発電部品の製造方法。
- 前記不連続な吸収層の前記開口内に前記太陽光発電マイクロ電池に対して不活性な材料を堆積させ、複数の開口を形成するように構成された不活性層を形成することをさらに備え、
前記電気絶縁層は、前記不活性層(108)の開口サイズ以下の開口を形成するように構成されることを特徴とする請求項1に記載の薄膜太陽光発電部品の製造方法。 - バック電気接点の導電材料からなる前記第1の層(101)は透明であり、
当該製造方法は、透明導電材料からなる前記第1の層(101)と電気的に接触して前記第1の層(101)とともに前記バック電気接点を形成し、前記太陽光発電マイクロ電池に対して周囲電気接点を形成するように構成される導電材料からなる第4の層(104B)を堆積することをさらに備えることを特徴とする請求項1から6のいずれかに記載の薄膜太陽光発電部品の製造方法。 - 界面層を前記吸収層と前記第3の層との間に堆積することをさらに備えることを特徴とする請求項1から7のいずれかに記載の薄膜太陽光発電部品の製造方法。
- 前記吸収材料は、CIGS系から選択された系に属することを特徴とする請求項1から8のいずれかに記載の薄膜太陽光発電部品の製造方法。
- nドープ硫化カドミウム、真性酸化亜鉛、硫化亜鉛誘導体、硫化インジウムを備える群から選択される材料からなる少なくとも一つの界面層を前記吸収層と前記第3の層との間に堆積することをさらに備えることを特徴とする請求項9に記載の薄膜太陽光発電部品の製造方法。
- 前記透明導電材料は、アルミニウムドープ酸化亜鉛を備えることを特徴とする請求項9または10に記載の薄膜太陽光発電部品の製造方法。
- 前記吸収材料は、CdTe系から選択された系に属することを特徴とする請求項1から8のいずれかに記載の薄膜太陽光発電部品の製造方法。
- 硫化カドミウムを備える材料からなる少なくとも一つの界面層を前記吸収層と前記第3の層との間に堆積することをさらに備えることを特徴とする請求項12に記載の薄膜太陽光発電部品の製造方法。
- 前記基板は、透明基板であることを特徴とする請求項1から13のいずれかに記載の薄膜太陽光発電部品の製造方法。
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JP2014157931A (ja) * | 2013-02-15 | 2014-08-28 | Nitto Denko Corp | Cigs系化合物太陽電池 |
FR3006107B1 (fr) * | 2013-05-22 | 2015-06-26 | Electricite De France | Procede de fabrication d'un systeme photovoltaique a concentration de lumiere |
GB2516011A (en) * | 2013-07-02 | 2015-01-14 | Ibm | Absorber device |
WO2015042524A1 (en) * | 2013-09-23 | 2015-03-26 | Siva Power, Inc. | Thin-film photovoltaic devices with discontinuous passivation layers |
FR3029215B1 (fr) * | 2014-12-02 | 2016-11-25 | Sunpartner Technologies | Fil textile photovoltaique |
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JPS621281A (ja) * | 1986-05-28 | 1987-01-07 | Teijin Ltd | 非晶質シリコン薄膜の製造方法 |
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