JP6125630B2 - Cmp組成物及びそれを使用する方法、半導体装置の製造方法 - Google Patents
Cmp組成物及びそれを使用する方法、半導体装置の製造方法 Download PDFInfo
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- JP6125630B2 JP6125630B2 JP2015519428A JP2015519428A JP6125630B2 JP 6125630 B2 JP6125630 B2 JP 6125630B2 JP 2015519428 A JP2015519428 A JP 2015519428A JP 2015519428 A JP2015519428 A JP 2015519428A JP 6125630 B2 JP6125630 B2 JP 6125630B2
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- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 1
- JIDDFPFGMDDOLO-UHFFFAOYSA-N 5-fluoro-1-(1-oxothiolan-2-yl)pyrimidine-2,4-dione Chemical compound O=C1NC(=O)C(F)=CN1C1S(=O)CCC1 JIDDFPFGMDDOLO-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical class [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- XSEQBUVOXWTHGU-UHFFFAOYSA-N Pieristoxin G Natural products CC1(O)CC2(C(C(O)C3(O)C4(C)C)O)C(O)C1CCC2(O)C(C)(O)C3C1C4O1 XSEQBUVOXWTHGU-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical class C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000003354 benzotriazolyl group Chemical class N1N=NC2=C1C=CC=C2* 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000005323 carbonate salts Chemical class 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 125000001316 cycloalkyl alkyl group Chemical group 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940107700 pyruvic acid Drugs 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 229960004274 stearic acid Drugs 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229960001367 tartaric acid Drugs 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Chemical & Material Sciences (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
(1)銅、及び/又は、
(2)タンタル、窒化タンタル、チタン、窒化チタン、ルテニウム、コバルト又はそれらの合金を含み、
特に下記のような改善された研磨性能を示す:
(i)研磨するのが好ましい基板(例えば窒化タンタル)の高材料除去速度(MRR)
(ii)研磨するのが好ましくない基板(例えば銅及び/又は低k材料)の低材料除去速度(MRR)
(iii)有害な副生成物の生成を最小化し、安全な取り扱い性、又は
(iv)上記(i)、(ii)、(iii)の組合せ。
(b)非イオン性界面活性剤
(C)炭酸塩又は炭酸水素塩
(d)アルコール、及び、
(M)水性媒体。
(i)銅、及び/又は、
(ii)タンタル、窒化タンタル、チタン、窒化チタン、ルテニウム、コバルト又はそれらの合金。
(i)銅、及び、
(ii)タンタル、窒化タンタル、チタン、窒化チタン、ルテニウム、コバルト又はそれらの合金、及び、
(iii)低k材料。
(i)銅、及び、
(ii)タンタル又は窒化タンタル、及び、
(iii)低k材料。
・1種類の繭形状の無機粒子、
・異なる種類の繭形状の無機粒子の複合物又は混合物、
・1種類の繭形状の有機粒子、
・異なる種類の繭形状の有機粒子の複合物又は混合物、又は、
・1種以上の繭形状の有機粒子と、1種以上の繭形状の無機粒子の複合物又は混合物、
とすることができる。
形状係数=4π(面積/周囲の長さ2)
伸長=(1/真球度)0.5
・メタライド、メタライド酸化物又は炭化物を含む、金属、金属酸化物又は炭化物などの繭形状無機粒子;
・ポリマー粒子などの繭形状有機粒子;
・繭形状無機粒子と繭形状有機粒子の混合物又は複合物
である。
・好ましくは無機粒子又はそれらの複合物若しくは混合物;
・より好ましくは、金属若しくはメタロイドの酸化物及び炭化物、又は、それらの混合物若しくは複合物;
・最も好ましくは、アルミナ、セリア、酸化銅、酸化鉄、酸化ニッケル、酸化マンガン、シリカ、窒化シリコン、炭化シリコン、酸化錫、チタニア、炭化チタン、酸化タングステン、酸化イットリウム、ジルコニア又はそれらの混合物若しくは複合物;
・特に好ましくはアルミナ、セリア、シリカ、チタニア、ジルコニア又はそれらの混合物若しくは複合物;
・特にシリカ粒子;
・例えばコロイダルシリカ粒子である。
− b1−b2、
− b1−b2−b1、
− b2−b1−b2、
− b2−b1−b2−b1、
− b1−b2−b1−b2−b1、及び
− b2−b1−b2−b1−b2
である。
(b21)オキシアルキレンモノマー単位、及び、
(b22)オキシエチレンモノマー単位以外のオキシアルキレンモノマー単位
を含み、前記モノマー単位(b21)はモノマー単位(b22)とは同一ではなく、(b2)のポリオキシアルキレン基は、モノマー単位(b21)、(b22)をランダム、交互、勾配及び/又はブロック状分布で含む。
(b21)オキシエチレンモノマー単位、及び、
(b22)オキシエチレンモノマー単位以外のオキシアルキレンモノマー単位を含み、(b2)のポリオキシアルキレン基は、モノマー単位(b21)及び(b22)を、ランダム、交互、勾配及び/又はブロック状分布で含む。
・より好ましくは、置換基がアルキル、シクロアルキル、アリール、アルキル−シクロアルキル、アルキル−アリール、シクロアルキル−アリール及びアルキル−シクロアルキル−アリール基からなる群より選択される置換オキシラン(X)から誘導され、
・最も好ましくはアルキル‐置換オキシラン(X)から誘導され、
・特に好ましくは、置換基が炭素原子1〜10を持つアルキル基からなる群より選択される置換オキシラン(X)から誘導され、
・例えば、メチルオキシラン(プロピレンオキシド)及び/又はエチルオキシラン(ブチレンオキシド)から誘導される。
−ランダム:…-b21-b21-b22-b21-b22-b22-b22-b21-b22-…;
−交互:…-b21-b22-b21-b22-b21-…;
−勾配:…b21-b21-b21-b22-b21-b21-b22-b22-b21-b22-b22-b22-…;又は
−ブロック状:…-b21-b21-b21-b21-b22-b22-b22-b22-…である。
アルコール(d)→脱プロトン化アルコール(d)+H+
についてのpKa値(酸解離定数の対数評価)が、9.9を超え、より好ましくは11を超え、最も好ましくは12を超え、特に好ましくは13を超え、例えば14を超えることを意味する(大気圧、25℃の脱イオン水中で測定)。例えば、プロパン−1,2−ジオール(アルファ−プロピレングリコール)は、pKa値 14.9を持つ(大気圧、25℃の脱イオン水中で測定)。
反応H−(G11) ⇔(G11)−+H+、又は、
反応[H− (G11)] +⇔ (G11)+H+
についてのpKa値(酸解離定数の対数評価)が7以下、より好ましくは6以下、最も好ましくは5.5以下、特に好ましくは5以下になれば、いかなる酸基でもよい(大気圧、25℃の脱イオン水中で測定)。
・好ましくは、エステル(-COOR3)、ヒドロキシル、アルコキシ、アルキル、アリール、アルキルアリール、アリールアルキル、ニトロ、アミノ、チオ又はハロゲン単位、
・より好ましくは、エステル(-COOR3)、ヒドロキシル、アルコキシ、ニトロ、アミノ、チオ又はハロゲン単位
・最も好ましくは、エステル(-COOR3)、ニトロ又はハロゲン単位
であり、ここで、R3はアルキル、アリール、アルキルアリール又はアリールアルキルである。他の選択肢(Z)は、特に好ましくはヒドロキシル単位である。
・芳香族環当たり少なくとも2つの酸基(Y)を含み、又は、
・芳香族環当たり少なくとも1つの酸基(Y)と、酸基(Y)とは異なる少なくとも1つの更なる官能基(Z)を含む。
(A)繭形状シリカ粒子、
(b)ポリオキシアルキレン基を含有する両親媒性非イオン性界面活性剤、
(C)炭酸塩(carbonate salt)、
(D)水性媒体中で分離しない、少なくとも2つの水酸基を持つアルコール、及び、
(M)水性媒体。
(A)繭形状シリカ粒子、
(b)ポリオキシアルキレン基を含有する両親媒性非イオン性界面活性剤、
(C)炭酸塩、
(d)アルコール、
(e)酸化剤、
(F)腐食防止剤、
(G)キレート剤、及び、
(M)水性媒体。
(A)繭形状シリカ粒子、
(b)ポリオキシアルキレン基を含有する両親媒性非イオン性界面活性剤、
(C)アルカリ炭酸塩(炭酸アルカリ)又はアルカリ炭酸水素塩(炭酸水素アルカリ)、
(D)水性媒体中で分離しない、少なくとも2つの水酸基を持つアルコール、
(E)酸化剤、
(F)腐食防止剤、
(G)キレート剤、及び、
(M)水性媒体。
研磨機での研磨性能の評価のため、以下のパラメータを選択した。
下方圧力: 2.0 psi (140 mbar);
バックサイド圧力: 1.5 psi (100 mbar);
保持リング圧力: 3.0 psi (210 mbar);
研磨テーブル/キャリアスピード: 112/115rpm;
スラリー流速: 200 ml/分;
主研磨工程時間: 60秒;
パッド条件: 外(ex situ )(2 Ibs (=0.907 kg)、 8.9 N);
リンス: 10秒、水
研磨パッド: Fujibo H800 NW;
バッキングフィルム: Strasbaugh, DF200 (136穴);
コンディショニングディスク: Diamonex CMP 4S830CF6;
CMP前及び後に、異なる49点直径スキャン(5 mm ee)の手段としてFilmmetrics F50リフレクトメーターにより除去速度を測定した。
SiO2 フィルム: プラズマ成膜テトラエチルオルトシリケート(以下“PETEOS”と称する);
窒化タンタル:CVD;
低k材料:Black diamond I(ブラックダイアモンド第1世代、以下“BD1”と称する);
銅:電解メッキ;
700mlスラリーを、開放2Lビーカーに入れ、300rpmで撹拌した。試験の前と後の平均粒径と同様、pHをモニタリングした。
pH:Knick Portamess 911xpH、電極: Schott instruments Blue Line 28 pH
校正(Calibration):Bernd Kraft社(pH4 − Art.Nr. 03083.3000 and pH7 − Art.Nr. 03086.3000)
平均粒径:Malvern Instruments社、HPPS 5001
350gのスラリーと14gのH2O2(31%)を混合し、24時間大気に開放して撹拌した;この試験の前と後のpHと、動的光散乱法による平均粒径とを測定し、比較した。
粒子(A)として使用したシリカ粒子は、Fuso PL−3タイプのものである。 Fuso PL−3は、繭形状コロイダルシリカ粒子であり、平均1次粒子径(d1)が35nmで、平均2次粒子径(d2)が70nmである。
20質量%固形分の水性繭形状シリカ粒子分散を、炭素箔上に分散させ、乾燥させた。乾燥分散物を、エネルギーフィルタ型透過電子顕微鏡(EF−TEM)(120キロボルト)画像と、走査電子顕微鏡二次電子像(SEM−SE)(5キロボルト)を用いて分析した。2k、16ビット、0.6851 nm/ピクセルの解像度のEF−TEM像(図4)を、分析に用いた。ノイズ抑制後の閾値を用いてこれらの像をバイナリコード化した。その後、粒子を手動で分離した。重なり、縁の粒子を区別し、分析には使用しなかった。それより前に測定したECD、形状係数及び真球度を算出し、統計学的に分類した。
実施例1〜2並びに比較例V1及びV2の組成物500gの作成:
キレート剤(G)5.00gを380gの水(M)に溶解し、次いで、3.21gのアルコール(D)、0.50gの非イオン性界面活性剤(b)(10質量%水溶液)及び12.5gの腐食防止剤(F)(1質量%水溶液)をゆっくり添加した。KOHを、pHが10.5になるよう調整するために使用する。実施例1及び2については、8gの炭酸カリウム溶液(25質量%水溶液)を、20.0gの研磨剤繭形状粒子(A)(20質量%水分散液)を添加する前に添加した。水は、480gの量まで添加し、pHは10.5に調整し、1時間モニタリングした。20.0gの酸化剤(e)(31質量%水溶液) を、研磨前に添加し、表2に示すpH値を得た。最終CMP組成物は、成分(A)、(b)、(c)、(d)、(e)、(F)及び任意に(G)または他の添加剤を、表2に示す量で含有する。
表2に示す成分を含有する水性分散液を作成し、実施例1〜2、比較例V1及びV2のCMP組成物とした。実施例1〜2及び比較例V1、V2のCMP組成物の組成及び研磨性能を表2に示す。
Claims (12)
- (A)無機粒子、有機粒子またはそれらの混合物もしくは複合物であって、繭形状の粒子と、
(B)非イオン性界面活性剤と、
(C)炭酸塩または炭酸水素塩と、
(D)アルコールと、
(G)キレート剤と
(M)水性媒体と、
を含有し、前記キレート剤(G)はテレフタル酸である化学機械研磨(CMP)組成物(Q)。 - 前記アルコール(D)は、前記水性媒体から分離しない、少なくとも2つの水酸基を持つアルコールである請求項1に記載のCMP組成物。
- 更に酸化剤(E)を含有する請求項1又は2に記載のCMP組成物。
- 更に腐食防止剤(F)を含有する請求項1〜3のいずれか1項に記載のCMP組成物。
- 前記粒子(A)は繭形状シリカ粒子である請求項1〜4のいずれか1項に記載のCMP組成物。
- 前記非イオン性界面活性剤(B)は、ポリオキシアルキレン基を含む両親媒性の非イオン性界面活性剤である請求項1〜5のいずれか1項に記載のCMP組成物。
- 前記炭酸塩(C)は、アルカリ炭酸塩又はアルカリ炭酸水素塩である請求項1〜6のいずれか1項に記載のCMP組成物。
- 前記組成物のpH値が8〜12の範囲にある請求項1〜7のいずれか1項に記載のCMP組成物。
- (A)繭形状シリカ粒子と、
(B)ポリオキシアルキレン基を含む両親媒性の非イオン性界面活性剤と、
(C)アルカリ炭酸塩又はアルカリ炭酸水素塩と、
(D)水性媒体中で分離しない、少なくとも2つの水酸基を持つアルコールと、
(E)酸化剤と、
(F)腐食防止剤と、
(G)キレート剤であるテレフタル酸と、
(M)水性媒体と、
を含有する請求項1〜8のいずれか1項に記載のCMP組成物。 - 半導体産業で使用される基板(S)を、請求項1〜9のいずれか1項に記載のCMP組成物の存在下で化学機械研磨する工程を含む半導体装置の製造方法。
- 請求項1〜9のいずれか1項に記載のCMP組成物を、半導体産業で使用される基板(S)の化学機械研磨に使用する方法。
- 前記基板(S)が、
(i)銅及び/又は、
(ii)タンタル、窒化タンタル、チタン、窒化チタン、ルテニウム、コバルト又はそれらの合金を含む請求項11に記載の方法。
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US11725117B2 (en) * | 2018-12-12 | 2023-08-15 | Basf Se | Chemical mechanical polishing of substrates containing copper and ruthenium |
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