JP6124287B2 - 炭化珪素基板又は炭化珪素半導体素子の検査方法及び炭化珪素基板又は炭化珪素半導体素子の製造方法 - Google Patents
炭化珪素基板又は炭化珪素半導体素子の検査方法及び炭化珪素基板又は炭化珪素半導体素子の製造方法 Download PDFInfo
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- JP6124287B2 JP6124287B2 JP2013042354A JP2013042354A JP6124287B2 JP 6124287 B2 JP6124287 B2 JP 6124287B2 JP 2013042354 A JP2013042354 A JP 2013042354A JP 2013042354 A JP2013042354 A JP 2013042354A JP 6124287 B2 JP6124287 B2 JP 6124287B2
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- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 97
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 97
- 239000000758 substrate Substances 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 54
- 239000004065 semiconductor Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000007689 inspection Methods 0.000 claims description 44
- 239000013598 vector Substances 0.000 claims description 43
- 238000004088 simulation Methods 0.000 claims description 25
- 230000007547 defect Effects 0.000 claims description 23
- 230000005284 excitation Effects 0.000 claims description 7
- 230000001066 destructive effect Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004854 X-ray topography Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 4
- 230000010365 information processing Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 235000015220 hamburgers Nutrition 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
10 試料台
20 レーザ光源
21 光ファイバ
30 画像形成装置
31 対物レンズ
32 バンドパスフィルタ
33 CCDカメラ
Claims (3)
- 非破壊で貫通刃状転位のバーガーズベクトルの方向を特定する炭化珪素基板又は炭化珪素半導体素子の検査方法であって、
炭化珪素基板又は炭化珪素半導体素子である被検査体に励起光を照射し、
前記励起光により前記被検査体から放射された蛍光を受光し、前記被検査体の発光状態を表す画像を形成し、
前記画像中に特定された欠陥の発光状態の形状・方向・強度から貫通刃状転位のバーガーズベクトルの方向を判定する
ことを特徴とする炭化珪素基板又は炭化珪素半導体素子の検査方法。 - 請求項1に記載する炭化珪素基板又は炭化珪素半導体素子の検査方法において、
Ray-tracingシミュレーションにより、前記被検査体の表面に現れた貫通刃状転位のシミュレーション画像を形成するとともに、当該シミュレーション画像の貫通刃状転位のバーガーズベクトルを解析し、
前記画像に特定された欠陥の発光状態の形状・方向・強度に相関する前記シミュレーション画像を特定し、前記画像に特定された欠陥の発光状態は、当該シミュレーション画像のバーガーズベクトルの方向を有する貫通刃状転位であると判定する
ことを特徴とする炭化珪素基板又は炭化珪素半導体素子の検査方法。 - 請求項1又は請求項2に記載する炭化珪素基板又は炭化珪素半導体素子の検査方法により特定された貫通刃状転位のバーガーズベクトルの方向を分析することで、当該バーガーズベクトルによる歪み及び応力を解析し、
前記歪み及び応力の発生が抑制される製造条件を特定し、当該製造条件で前記炭化珪素基板又は前記炭化珪素半導体素子を製造する
ことを特徴とする炭化珪素基板又は炭化珪素半導体素子の製造方法。
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Families Citing this family (7)
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DE112017000725T5 (de) | 2016-02-09 | 2018-10-31 | Sumitomo Electric Industries, Ltd. | Siliziumkarbit-Einkristallsubstrat |
JP6688184B2 (ja) * | 2016-07-20 | 2020-04-28 | 東レエンジニアリング株式会社 | ワイドギャップ半導体基板の欠陥検査装置 |
JP6768491B2 (ja) * | 2016-12-26 | 2020-10-14 | 昭和電工株式会社 | SiCウェハ及びSiCウェハの製造方法 |
JP7106217B2 (ja) * | 2018-08-22 | 2022-07-26 | 株式会社ディスコ | ファセット領域の検出方法及び検出装置 |
JP7229729B2 (ja) * | 2018-11-08 | 2023-02-28 | 株式会社ディスコ | Facet領域の検出方法および検出装置ならびにウエーハの生成方法およびレーザー加工装置 |
KR102381348B1 (ko) * | 2020-10-29 | 2022-03-30 | 한국전기연구원 | 탄화규소 웨이퍼의 tsd와 ted 결함 비파괴 분석법 |
KR102567624B1 (ko) * | 2021-09-09 | 2023-08-16 | 한국전기연구원 | 비파괴분석법을 이용한 탄화규소 결정 결함위치 분석법과 이를 포함하는 분석장치 및 이를 실행시키기 위하여 기록매체에 저장된 컴퓨터 프로그램 |
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JP2010184833A (ja) * | 2009-02-12 | 2010-08-26 | Denso Corp | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
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