JP6119550B2 - Expander, breaking device and cutting method - Google Patents
Expander, breaking device and cutting method Download PDFInfo
- Publication number
- JP6119550B2 JP6119550B2 JP2013215395A JP2013215395A JP6119550B2 JP 6119550 B2 JP6119550 B2 JP 6119550B2 JP 2013215395 A JP2013215395 A JP 2013215395A JP 2013215395 A JP2013215395 A JP 2013215395A JP 6119550 B2 JP6119550 B2 JP 6119550B2
- Authority
- JP
- Japan
- Prior art keywords
- expander
- composite substrate
- substrate
- brittle material
- functional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laminated Bodies (AREA)
Description
本発明は半導体基板、セラミックス基板等の脆性材料基板の上に樹脂層などがコーティングされた複合基板の破断に用いられるエキスパンダ、破断装置及び分断方法に関するものである。 The present invention relates to an expander, a breaking device and a cutting method used for breaking a composite substrate in which a resin layer or the like is coated on a brittle material substrate such as a semiconductor substrate or a ceramic substrate.
半導体チップは、半導体ウエハに形成された素子領域を、その領域の境界位置で分断することにより製造される。従来、ウエハをチップに分断する場合には、ダイシング装置によってダイシングブレードを回転させて、切削によって半導体ウエハを小さく切断していた。 A semiconductor chip is manufactured by dividing an element region formed on a semiconductor wafer at a boundary position of the region. Conventionally, when a wafer is divided into chips, a dicing blade is rotated by a dicing apparatus, and the semiconductor wafer is cut into small pieces by cutting.
しかしダイシング装置を用いる場合には切削による排出屑を排出するための水が必要であり、その水や排出屑が半導体チップの性能へ悪影響を与えないように、半導体チップへの保護を施し、水や排出屑を洗浄するための前後工程が必要となる。従って工程が複雑となり、コスト削減や加工時間が短縮できないという欠点があった。又ダイシングブレードを用いた切削によって膜が剥がれたり欠けが生じるなどの問題が生じる。又微小な機械構造を有するＭＥＭＳ基板においては、水の表面張力による構造の破壊が引起こされるため水が使用できず、ダイシングによって分断できないといった問題が生じていた。 However, when using a dicing machine, water is required to discharge the waste generated by cutting, and the semiconductor chip is protected so that the water or the discharged waste does not adversely affect the performance of the semiconductor chip. In addition, a pre- and post-process for cleaning the discharged waste is required. Therefore, the process is complicated, and there is a disadvantage that cost reduction and processing time cannot be shortened. In addition, there is a problem that the film is peeled off or chipped by cutting using a dicing blade. Further, in the MEMS substrate having a minute mechanical structure, the structure is broken by the surface tension of water, so that water cannot be used, and there is a problem that it cannot be divided by dicing.
又特許文献１，２には、スクライブラインが形成された半導体ウエハを、スクライブラインが形成された面の裏面から、スクライブラインに沿って面に垂直に押圧することによりブレイクする基板ブレイク装置が提案されている。以下、このようなブレイク装置によるブレイクの概要を示す。ブレイクの対象となる半導体ウエハには、整列して多数の機能領域が形成されているものとする。分断する場合には、まず半導体ウエハに機能領域の間に等しい間隔を隔てて縦方向及び横方向にスクライブラインを形成する。そしてこのスクライブラインに沿ってブレイク装置で分断する。図１（ａ）は分断する前のブレイク装置に載置された半導体ウエハの断面図を示している。本図に示すように、複合基板１０１に機能領域１０１ａ，１０１ｂとその間にスクライブラインＳ１，Ｓ２，Ｓ３・・・が形成されている。分断する場合には複合基板１０１の裏面に粘着テープ１０２を貼り付け、その表面に保護フィルム１０３を貼り付ける。そしてブレイク時には図１（ｂ）に示すように受け刃１０５，１０６のちょうど中間にブレイクすべきスクライブライン、この場合にはスクライブラインＳ２を配置し、その上部よりブレード１０４をスクライブラインに合わせて降下させ、複合基板１０１を押圧する。このようにして一対の受け刃１０５，１０６とブレード１０４との三点曲げによるブレイクが行われていた。 Patent Documents 1 and 2 propose a substrate breaker that breaks a semiconductor wafer on which a scribe line is formed by pressing it perpendicularly to the surface along the scribe line from the back surface on which the scribe line is formed. Has been. Hereinafter, an outline of the break by such a break device will be described. It is assumed that a number of functional regions are formed in alignment on a semiconductor wafer to be broken. When dividing, first, scribe lines are formed in the vertical direction and the horizontal direction at equal intervals between the functional areas on the semiconductor wafer. And it breaks with a break device along this scribe line. FIG. 1A shows a cross-sectional view of a semiconductor wafer placed on a breaking device before cutting. As shown in this figure, functional regions 101a, 101b and scribe lines S1, S2, S3,... In the case of dividing, an adhesive tape 102 is attached to the back surface of the composite substrate 101, and a protective film 103 is attached to the surface. In the case of a break, a scribe line to be broken, in this case a scribe line S2, is arranged in the middle of the receiving blades 105 and 106 as shown in FIG. The composite substrate 101 is pressed. In this way, a break by three-point bending between the pair of receiving blades 105 and 106 and the blade 104 has been performed.
このような構成を有するブレイク装置においては、ブレイク時にブレード１０４を押し下げて押圧した場合、複合基板１０１は僅かではあるが撓むので、複合基板１０１と受け刃１０５，１０６の前縁が接する部分に応力が集中する。このためブレイク装置の受け刃１０５，１０６の部分が図１（ａ）に示すように機能領域１０１ａ，１０１ｂに接触していると、ブレイク時に機能領域に力が加わってしまう。そのため半導体ウエハ上の機能領域が損傷する可能性があるという問題点があった。 In the break device having such a configuration, when the blade 104 is pushed down and pressed at the time of the break, the composite substrate 101 is slightly bent, so that the composite substrate 101 and the front edges of the receiving blades 105 and 106 are in contact with each other. Stress is concentrated. For this reason, when the receiving blades 105 and 106 of the breaking device are in contact with the functional areas 101a and 101b as shown in FIG. 1A, force is applied to the functional area at the time of the break. Therefore, there is a problem that the functional area on the semiconductor wafer may be damaged.
又ブレイク装置を用いて分断する基板として、セラミックス基板上にシリコン樹脂がコーティングされた複合基板がある。このような複合基板ではセラミックス基板をブレイクした後に、樹脂層を直接ブレイクバーで押圧した場合には、樹脂層が変形して損傷し易いという問題点があった。又これを解消するためにレーザ光を用いて分断しようとすると、レーザによる熱の影響により損傷を受けたり、レーザを照射した後、飛散物が周辺に付着してしまうことがあるという問題点があった。 As a substrate to be cut using a break device, there is a composite substrate in which a ceramic resin is coated on a ceramic substrate. In such a composite substrate, there is a problem that when the resin layer is directly pressed by a break bar after the ceramic substrate is broken, the resin layer is easily deformed and damaged. In order to solve this problem, there is a problem that if the laser beam is used to divide the laser beam, the laser beam may be damaged by the influence of heat or the scattered objects may adhere to the periphery after the laser irradiation. there were.
本発明はこのような問題点に着目してなされたものであって、既に脆性材料基板がブレイクされている複合基板を損傷なく破断できるようにすることを目的とする。 The present invention has been made paying attention to such problems, and an object of the present invention is to be able to break a composite substrate on which a brittle material substrate has already been broken without damage.
この課題を解決するために、本発明のエキスパンダは、一方の面に縦方向及び横方向に整列して配列された複数の機能領域を有する脆性材料基板上に樹脂がコーティングされ、前記各機能領域を分断するように前記脆性材料基板にブレイクラインが形成された複合基板を分断する際に用いられるエキスパンダであって、平板状のベースと、前記平板状のベース上に一体に形成された筋状の複数のエキスパンドバーと、を有し、前記各エキスパンドバーは、夫々の稜線が一平面を形成し、前記複合基板の機能領域のピッチの２以上の整数倍の間隔を有するものである。 In order to solve this problem, the expander of the present invention has a resin coated on a brittle material substrate having a plurality of functional regions arranged in a longitudinal direction and a lateral direction on one side, An expander for use in dividing a composite substrate in which break lines are formed on the brittle material substrate so as to divide a region, and is formed integrally on a flat plate base and the flat plate base A plurality of streak-like expanded bars, and each of the expanded bars has a ridge line forming a plane and an interval of an integer multiple of 2 or more of the pitch of the functional area of the composite substrate. .
この課題を解決するために、本発明の破断装置は、一方の面に機能領域を有する脆性材料基板上に樹脂がコーティングされ、前記機能領域を分断するように前記脆性材料基板にブレイクラインが形成された複合基板の樹脂層を破断する破断装置であって、テーブルと、前記テーブル上に配置され、ブレイクラインが形成された面を上面として前記複合基板を保持する弾性支持板と、平板状のベース及び前記ベース上に一体に形成された筋状の複数のエキスパンドバーを有し、前記各エキスパンドバーは、夫々の稜線が一平面を形成し、前記複合基板の機能領域のピッチの２以上の整数倍の間隔を有するエキスパンダと、前記テーブルをその面に沿って移動させる移動機構と、前記複合基板とエキスパンドバーとを平行に保ちつつ、前記弾性支持板上の複合基板の面に向けて前記エキスパンダを昇降させる昇降機構と、を具備するものである。 In order to solve this problem, in the breaking device of the present invention, a resin is coated on a brittle material substrate having a functional region on one side, and a break line is formed on the brittle material substrate so as to divide the functional region. A breaking device for breaking a resin layer of a composite substrate, comprising: a table; an elastic support plate that is disposed on the table and holds the composite substrate with a surface on which a break line is formed as an upper surface; A base and a plurality of streak-like expanded bars integrally formed on the base, each of the expanded bars having a ridge line forming one plane and having a pitch of two or more of the functional areas of the composite substrate An expander having an integer multiple interval, a moving mechanism for moving the table along its surface, and the elastic support while keeping the composite substrate and the expanding bar in parallel. Those comprising an elevating mechanism for elevating the expander towards the surface of the composite substrate on the board, the.
この課題を解決するために、本発明の分断方法は、一方の面に縦方向及び横方向に整列して配列された複数の機能領域を有する脆性材料基板上に樹脂がコーティングされ、前記各機能領域を分断するようにブレイクラインが形成された複合基板を分断する分断方法であって、弾性支持板上に脆性材料基板が上面となるように前記複合基板を配置し、ブレイクされたラインに沿って下端に前記エキスパンダのエキスパンドバーを対応させて前記エキスパンダを押下することによって樹脂層を破断するものである。 In order to solve this problem, the dividing method of the present invention includes a resin coated on a brittle material substrate having a plurality of functional regions arranged on one surface in a longitudinal direction and a lateral direction, and each of the functions described above. A dividing method for dividing a composite substrate on which a break line is formed so as to divide a region, wherein the composite substrate is disposed on an elastic support plate so that a brittle material substrate is on an upper surface, and the broken substrate is aligned along the broken line. The expander bar of the expander is made to correspond to the lower end, and the expander is pressed down to break the resin layer.
この課題を解決するために、本発明の分断方法は、一方の面に縦方向及び横方向に整列して配列された複数の機能領域を有する脆性材料基板上に樹脂がコーティングされ、前記各機能領域を分断するようにブレイクラインが形成された複合基板を分断する分断方法であって、弾性支持板上に脆性材料基板が上面となるように前記複合基板を配置し、ブレイクされたラインに沿って下端に前記エキスパンダの前記エキスパンドバーを対応させて前記エキスパンダを押下することによって樹脂層に破断を進展させて破断し、前記複合基板の位置を前記機能領域のピッチ分だけずらせて前記エキスパンダを再び押下することによって樹脂層を破断するものである。 In order to solve this problem, the dividing method of the present invention includes a resin coated on a brittle material substrate having a plurality of functional regions arranged on one surface in a longitudinal direction and a lateral direction, and each of the functions described above. A dividing method for dividing a composite substrate on which a break line is formed so as to divide a region, wherein the composite substrate is disposed on an elastic support plate so that a brittle material substrate is on an upper surface, and the broken substrate is aligned along the broken line. The expansion bar of the expander is made to correspond to the lower end of the expander, and the expander is pushed down to cause the resin layer to break and break, and the position of the composite substrate is shifted by the pitch of the functional area. The resin layer is broken by depressing the panda again.
ここで前記エキスパンダのエキスパンドバーは、下端の断面が円弧状に形成されたものとしてもよい。 Here, the expander of the expander may have a lower end section formed in an arc shape.
このような特徴を有する本発明によれば、複合基板を弾性支持板上に配置し、ブレイクラインに筋状のエキスパンドバーの最下端ラインが対応するように位置合わせして破断している。そのため、機能領域が損傷することなく樹脂層をブレイクラインに沿って破断することができるという効果が得られる。 According to the present invention having such a feature, the composite substrate is disposed on the elastic support plate, and is aligned and broken so that the lowermost line of the streak-like expanded bar corresponds to the break line. Therefore, the effect that the resin layer can be broken along the break line without damaging the functional region is obtained.
次に本発明の実施の形態について説明する。図２はこのような基板の一例として長方形状の半導体素子が形成された複合基板１０の正面図及び側面図を示している。この実施の形態においては分断の対象となる複合基板１０をセラミックス基板１１上に樹脂層、例えばシリコン樹脂１２がコーティングされた複合基板１０とする。ここで複合基板１０のセラミックス基板１１のみの分断は、基板に垂直にスクライブが浸透して一気に分断が進むので「ブレイク」と表現し、シリコン樹脂層１２の分断は、力を加えることによって樹脂層の亀裂が徐々に押し広げられて裂けていくので「破断」と表現している。又複合基板１０の全体の分断を「分断」として表現している。複合基板１０の製造工程でｘ軸，ｙ軸に平行なラインに沿って縦横に整列して同一ピッチで格子状に多数の機能領域１３が形成されている。この機能領域１３は、例えばＬＥＤや機械構成部品、センサ、アクチュエータ等を作り込んだＭＥＭＳ機能領域とする。そして各機能領域毎に分断して半導体チップとするために、一点鎖線で示すように縦方向に等間隔のラインをスクライブ予定ラインＳy1〜Ｓyn、横方向の等間隔のラインをスクライブ予定ラインＳx1〜Ｓxmとし、これらのスクライブ予定ラインで囲まれる正方形の中央に機能領域の部品が位置するようにする。尚、複合基板１０は正方形であっても長方形であってもよく、図２では長方形としているが、格子状の機能領域は正方形であり、スクライブ予定ラインの数はｙ方向のスクライブ予定ラインＳy1〜Ｓynがｘ方向のスクライブ予定ラインＳx1〜Ｓxmより多いものとする。 Next, an embodiment of the present invention will be described. FIG. 2 shows a front view and a side view of a composite substrate 10 on which a rectangular semiconductor element is formed as an example of such a substrate. In this embodiment, the composite substrate 10 to be divided is a composite substrate 10 in which a ceramic layer 11 is coated with a resin layer, for example, a silicon resin 12. Here, the division of only the ceramic substrate 11 of the composite substrate 10 is expressed as “break” because the scribe penetrates perpendicularly to the substrate and the division proceeds at a stretch. The division of the silicon resin layer 12 is performed by applying force to the resin layer. Since the cracks of the are gradually spread and tear, it is expressed as “breaking”. Further, the entire division of the composite substrate 10 is expressed as “division”. In the manufacturing process of the composite substrate 10, a large number of functional regions 13 are formed in the form of a lattice at the same pitch aligned vertically and horizontally along lines parallel to the x-axis and y-axis. This functional area 13 is a MEMS functional area in which, for example, LEDs, machine components, sensors, actuators, and the like are built. Then, in order to divide each functional area into semiconductor chips, as shown by alternate long and short dash lines, scribe lines S y1 to S yn are arranged at equal intervals in the vertical direction, and scribe lines are arranged at equal intervals in the horizontal direction. S x1 to S xm are set so that the functional area component is located at the center of the square surrounded by the scribe lines. The composite substrate 10 may be square or rectangular. In FIG. 2, the composite substrate 10 is rectangular. However, the lattice-shaped functional area is square, and the number of planned scribe lines is the number of planned scribe lines S y1 in the y direction. ~S yn is assumed greater than the scribed line S x1 ~S xm in the x-direction.
次にこの実施の形態の樹脂層の破断に用いられる破断装置２０について説明する。破断装置２０は、図３に示すようにｙ方向への移動及び回転することが可能なテーブル２１を有している。破断装置２０にはテーブル２１の下方にテーブル２１をその面に沿ってｙ軸方向に移動させ、更にその面に沿って回転させる移動機構が設けられている。そしてテーブル２１の上に後述する弾性支持板４０を介して分断対象となる複合基板１０が載置される。テーブル２１の上部にはコ字状の水平固定部材２２が設けられ、その上部にはサーボモータ２３が保持されている。サーボモータ２３の回転軸にはボールネジ２４が直結され、ボールネジ２４の下端は、別の水平固定部材２５にて回転できるように支持されている。上移動部材２６は中央部にボールネジ２４に螺合する雌ネジ２７を備え、その両端部から下方に向けて支持軸２８ａ，２８ｂを備えている。支持軸２８ａ，２８ｂは水平固定部材２５の一対の貫通孔を貫通して下移動部材２９に連結されている。下移動部材２９の下面には後述するエキスパンダ３０がテーブル２１の面に平行に取付けられている。これにより、サーボモータ２３によりボールネジ２４を回転させた場合、上移動部材２６と下移動部材２９とが一体となって上下動し、エキスパンダ３０も同時に上下動することとなる。ここでサーボモータ２３と水平固定部材２２，２５、上下の移動部材２６，２９はエキスパンダ３０を昇降させる昇降機構を構成している。 Next, the breaking device 20 used for breaking the resin layer according to this embodiment will be described. As shown in FIG. 3, the breaking device 20 has a table 21 that can move and rotate in the y direction. The breaking device 20 is provided below the table 21 with a moving mechanism for moving the table 21 along the surface in the y-axis direction and rotating along the surface. Then, the composite substrate 10 to be divided is placed on the table 21 via an elastic support plate 40 described later. A U-shaped horizontal fixing member 22 is provided on the upper portion of the table 21, and a servo motor 23 is held on the upper portion. A ball screw 24 is directly connected to the rotation shaft of the servo motor 23, and the lower end of the ball screw 24 is supported so that it can be rotated by another horizontal fixing member 25. The upper moving member 26 is provided with a female screw 27 screwed into the ball screw 24 at the center, and support shafts 28a and 28b from both ends thereof downward. The support shafts 28 a and 28 b pass through a pair of through holes of the horizontal fixing member 25 and are connected to the lower moving member 29. An expander 30 which will be described later is attached to the lower surface of the lower moving member 29 in parallel to the surface of the table 21. As a result, when the ball screw 24 is rotated by the servo motor 23, the upper moving member 26 and the lower moving member 29 move up and down together, and the expander 30 moves up and down simultaneously. Here, the servo motor 23, the horizontal fixing members 22, 25, and the upper and lower moving members 26, 29 constitute an elevating mechanism for elevating the expander 30.
次に破断の際に用いるエキスパンダ３０について説明する。エキスパンダ３０は例えば図４に斜視図を示すように、平面状のベース３１に平行な筋状のエキスパンドバー３２ａ〜３２ｎが多数並列に形成されているものとする。この各エキスパンドバーの全ての稜線は１つの平面を構成している。又エキスパンドバーの間隔は一定でスクライブ予定ラインの間隔の２以上の整数倍であればよく、本実施の形態では２倍とする。そして各エキスパンドバーの断面はブレイクラインに沿って押圧することのできる突出部を有する形状であれば特に限定されないが、後述するように湾曲した円弧状とすることが好ましい。又エキスパンドバーの数は複合基板の多い方のスクライブラインの数よりも１少ないものとする。尚図４ではエキスパンドバー３２ａ〜３２ｎを明示するためそれらが上面となるように示しているが、使用時にはエキスパンドバー３２ａ〜３２ｎが下方となるように下移動部材２９に取付けられる。 Next, the expander 30 used at the time of a fracture | rupture is demonstrated. For example, as shown in a perspective view in FIG. 4, the expander 30 includes a large number of streak-like expanded bars 32 a to 32 n that are parallel to the planar base 31. All the ridge lines of each expanding bar constitute one plane. The interval between the expanded bars is constant and may be an integer multiple of 2 or more than the interval between the scheduled scribe lines. In the present embodiment, the interval is twice. The section of each expanded bar is not particularly limited as long as it has a shape having a protrusion that can be pressed along the break line, but is preferably a curved arc as described later. Further, the number of expand bars is one less than the number of scribe lines with the larger number of composite substrates. In FIG. 4, the expanded bars 32 a to 32 n are shown to be on the upper surface in order to clearly show them. However, when used, the expanded bars 32 a to 32 n are attached to the lower moving member 29 so as to be downward.
本実施の形態では、複合基板１０の樹脂層を破断する際に弾性支持板４０を用いる。弾性支持板４０は図５に斜視図を示すように長方形の平板のゴム製治具であって、複合基板１０と同一の大きさであり、例えば厚さを数ｍｍ程度とする。 In the present embodiment, the elastic support plate 40 is used when the resin layer of the composite substrate 10 is broken. As shown in the perspective view of FIG. 5, the elastic support plate 40 is a rectangular flat rubber jig having the same size as the composite substrate 10 and has a thickness of, for example, about several mm.
次に複合基板１０を分断する方法について説明する。図６は分断する過程を示す図であり、図６（ａ）は複合基板１０の一部分を示している。まず図６（ｂ）に示すように、セラミックス基板１１の面を上面として図示しないスクライブ装置によりスクライビングホイール５０を移動させ、スクライブ予定ラインに沿ってスクライブする。そして図２（ａ）に示すようにｘ方向のスクライブラインＳx1〜Ｓxm、ｙ方向のスクライブラインＳy1〜Ｓynを形成する。 Next, a method for dividing the composite substrate 10 will be described. FIG. 6 is a diagram showing a process of dividing, and FIG. 6A shows a part of the composite substrate 10. First, as shown in FIG. 6B, the scribing wheel 50 is moved by a scribing device (not shown) with the surface of the ceramic substrate 11 as the upper surface, and scribing is performed along the planned scribe line. Then, scribe lines S x1 to S xm in the x direction and scribe lines S y1 to S yn in the y direction are formed as shown in FIG.
次にセラミックス基板１１のブレイク工程では、図６（ｃ）に示すように、まず複合基板１０を反転させる。そして図示しないブレイク装置を用いて既に形成されているスクライブラインの真上にブレイクバー５１が位置するようにし、ブレイクバー５１を押し下げることによってセラミックス基板１１のみをブレイクする。 Next, in the breaking process of the ceramic substrate 11, as shown in FIG. 6C, the composite substrate 10 is first reversed. Then, the break bar 51 is positioned directly above the scribe line already formed using a break device (not shown), and only the ceramic substrate 11 is broken by pushing down the break bar 51.
これによってセラミックス基板１１のみがスクライブラインＳx1〜Ｓxm，Ｓy1〜Ｓynに沿ってブレイクされた状態となる。図６（ｄ）はｘ方向及びｙ方向の各スクライブラインに沿ってブレイクされた複合基板１０の一部を示している。尚スクライブラインＳx1〜Ｓxm，Ｓy1〜Ｓynは全てブレイクされているので、以下ではブレイクラインＢx1〜Ｂxm，Ｂy1〜Ｂynという。 This ceramic substrate 11 only scribe line S x1 to S xm, in a state of being break along the S y1 to S yn. FIG. 6D shows a part of the composite substrate 10 that is broken along the scribe lines in the x and y directions. Since the scribe lines S x1 to S xm and S y1 to S yn are all broken, they are hereinafter referred to as break lines B x1 to B xm and B y1 to B yn .
次に図７に示すようにセラミックス基板１１に形成されたブレイクラインをシリコン樹脂層にも浸透させて複合基板１０の分断を完了する方法について説明する。図７は樹脂層１２の破断する過程を示す図であり、図７（ａ）は複合基板１０と弾性支持板４０及びエキスパンドバー３０の一部分を示している。まず、前述した破断装置２０のテーブル２１上に弾性支持板４０を配置し、更にその上面に複合基板１０を配置する。このとき図７（ａ）に示すようにシリコン樹脂層１２を弾性支持板４０に当接するように配置し、セラミックス基板１１の面を上面とする。次いでこのエキスパンダ３０のエキスパンドバー、例えば３２ｂ，３２ｃ，３２ｄの最下部の稜線をブレイクラインに合わせるように位置決めする。こうすれば他のエキスパンドバーについても、１つおきにブレイクラインの真上となるようになる。 Next, a method for completing the division of the composite substrate 10 by allowing the break line formed on the ceramic substrate 11 to penetrate the silicon resin layer as shown in FIG. FIG. 7 is a diagram illustrating a process of breaking the resin layer 12, and FIG. 7A illustrates a part of the composite substrate 10, the elastic support plate 40, and the expanded bar 30. First, the elastic support plate 40 is disposed on the table 21 of the breaking device 20 described above, and the composite substrate 10 is disposed on the upper surface thereof. At this time, as shown in FIG. 7A, the silicon resin layer 12 is disposed so as to contact the elastic support plate 40, and the surface of the ceramic substrate 11 is the upper surface. Next, the expander 30 of the expander 30, for example, 32b, 32c, 32d, is positioned so that the lowermost ridge line is aligned with the break line. This way, every other expanded bar will be directly above the break line.
次にサーボモータ２３を駆動し、上移動部材２６と下移動部材２９とを同時に低下させてエキスパンダ３０のエキスパンドバーをテーブル２１に対して平行に保ちつつ徐々に降下させる。そして図７（ｂ）に示すようにエキスパンドバー３２ｂ，３２ｃ，３２ｄ，・・・をブレイクラインＢxi+1，Ｂxi+3，Ｂxi+5，・・・の真上からセラミックス基板１１を押圧する。こうすれば図７（ｃ）に示すようにセラミックス基板１１が各エキスパンドバーに押されて変形し、沈み込んで弾性支持板４０が同様にＶ字状に変形する。このとき各エキスパンドバーの押し込みに応じてセラミックス基板の左右が均等に変形していくことで、亀裂をブレイクラインに沿って下方に浸透させることができる。ここでエキスパンドバーの下方の断面の形状は特に限定されないが、例えば、三角形状の場合には、頂点をブレイクラインに揃える位置決めを高精度に行なう必要性が相対的に高くなる。そこでセラミックス基板１１、シリコン樹脂１２をこのようにバランスよく変形させるために、各エキスパンドバーの下方の断面は円弧状としている。これにより、エキスパンドバーの稜線をブレイクラインに揃える位置決めの精度の許容範囲が相対的に広くなっている。そしてエキスパンドバーを十分降下させることによって、樹脂内の亀裂が進展して左右に押し開く力が加わり、破断が完了することとなる。破断が完了すると、サーボモータ２３を逆転させてエキスパンダ３０を上昇させる。 Next, the servo motor 23 is driven, and the upper moving member 26 and the lower moving member 29 are lowered at the same time, and the expanding bar of the expander 30 is gradually lowered while being kept parallel to the table 21. Then, as shown in FIG. 7B, the expanded bars 32b, 32c, 32d,... Are placed on the ceramic substrate 11 from directly above the break lines Bxi + 1 , Bxi + 3 , Bxi + 5,. Press. If it carries out like this, as shown in FIG.7 (c), the ceramic substrate 11 will be pushed and deform | transformed by each expand bar, will sink, and the elastic support plate 40 will similarly deform | transform into a V shape. At this time, the left and right sides of the ceramic substrate are uniformly deformed in accordance with the pressing of each expanding bar, so that the cracks can penetrate downward along the break line. Here, the shape of the cross section below the expand bar is not particularly limited. However, for example, in the case of a triangular shape, the necessity of highly accurately positioning the apex to the break line becomes relatively high. Therefore, in order to deform the ceramic substrate 11 and the silicon resin 12 in a balanced manner as described above, the lower cross section of each expanding bar has an arc shape. Thereby, the tolerance | permissible_range of the positioning accuracy which aligns the ridgeline of an expanded bar with a break line is relatively wide. Then, by sufficiently lowering the expanding bar, a crack in the resin progresses and a force to push left and right is applied, and the fracture is completed. When the breakage is completed, the servo motor 23 is reversed to raise the expander 30.
このときエキスパンダ３０は多数のエキスパンドバーが並列に形成されており、その間隔はスクライブラインの２倍であるため、１つおきに複数のブレイクラインに沿って同時にシリコン樹脂１２をブレイクすることができる。 At this time, the expander 30 has a large number of expanded bars formed in parallel, and the interval is twice that of the scribe line. Therefore, the silicon resin 12 can be simultaneously broken along a plurality of break lines. it can.
そして図８に示すようにテーブル２１をｙ軸方向にブレイクラインのピッチ分だけ移動させる。そして図８（ｂ），（ｃ）に示すようにエキスパンダ３０を降下させることによって、他の隣接するブレイクラインＢxi，Ｂxi+2，Ｂxi+4，・・・についても樹脂層の破断を完了することができる。ここではエキスパンドバーの間隔がスクライブラインのピッチの２倍であるので、１回テーブル２１をシフトさせて破断することによって複合基板１０の全てのｘ軸方向の破断を完了することができる。又エキスパンドバーの間隔がスクライブラインのピッチの３倍の場合には、２回テーブル２１を移動させて破断することで全てのｘ軸方向の破断を完了することができる。 Then, as shown in FIG. 8, the table 21 is moved in the y-axis direction by the break line pitch. Then, as shown in FIGS. 8B and 8C, by lowering the expander 30, the other adjacent break lines Bxi , Bxi + 2 , Bxi + 4,. Breaking can be completed. Here, since the interval between the expanded bars is twice the pitch of the scribe lines, all the breaks in the x-axis direction of the composite substrate 10 can be completed by shifting the table 21 once and breaking. When the interval between the expanded bars is three times the pitch of the scribe lines, all the breaks in the x-axis direction can be completed by moving the table 21 twice and breaking.
そしてテーブル２１を９０°回転させてｙ軸のブレイクラインについても同様にエキスパンダ３０を降下させ、樹脂層を破断する。そしてテーブル２１をｙ軸方向にブレイクラインのピッチ分だけ移動させて、同様にしてエキスパンダ３０を降下させる。こうすれば全面の破断が完了し、各ブレイクラインに沿って樹脂を引き裂いて正方形状の機能領域を分断してＭＥＭＳチップを多数形成することができる。 Then, the table 21 is rotated by 90 °, and the expander 30 is similarly lowered with respect to the break line of the y-axis to break the resin layer. Then, the table 21 is moved in the y-axis direction by the break line pitch, and the expander 30 is lowered similarly. By doing so, the entire surface is broken, and the resin is torn along each break line to divide the square-shaped functional region, so that a large number of MEMS chips can be formed.
尚この実施の形態では、ベースとなっている基板としてセラミックス基板について説明しているが、本発明は半導体基板やガラス基板等の種々の脆性材料基板にも適用することができる。 In this embodiment, the ceramic substrate is described as the base substrate. However, the present invention can also be applied to various brittle material substrates such as a semiconductor substrate and a glass substrate.
又この実施の形態では、セラミックス基板に塗布する樹脂としてシリコン樹脂について説明しているが、その他の種々の材質の層、例えばガラス基板に対して積層するものとして偏光板等の層であってもよい。 In this embodiment, the silicon resin is described as the resin to be applied to the ceramic substrate. However, it may be a layer of various other materials, for example, a layer such as a polarizing plate to be laminated on the glass substrate. Good.
本発明は保護すべき領域を有する脆性材料基板をスクライブし分断する際に、保護すべき領域を損傷することなく破断することができるため、機能領域が形成された基板の破断装置に有効に適用することができる。 Since the present invention can be ruptured without damaging the area to be protected when scribing and dividing the brittle material substrate having the area to be protected, the invention is effectively applied to a substrate breaking apparatus in which the functional area is formed. can do.
１０ 複合基板
１１ セラミックス基板
１２ シリコン樹脂
１３ 機能領域
２０ 破断装置
２１ テーブル
２２，２５ 水平固定部材
２３ サーボモータ
２４ ボールネジ
２６，２９ 移動部材
３０ エキスパンダ
３１ ベース
３２ａ〜３２ｎ エキスパンドバー
４０ 弾性支持板
DESCRIPTION OF SYMBOLS 10 Composite substrate 11 Ceramic substrate 12 Silicon resin 13 Functional area 20 Breaking device 21 Table 22, 25 Horizontal fixing member 23 Servo motor 24 Ball screw 26, 29 Moving member 30 Expander 31 Base 32a-32n Expand bar 40 Elastic support plate
Claims (7)
平板状のベースと、
前記平板状のベース上に一体に形成された筋状の複数のエキスパンドバーと、を有し、
前記各エキスパンドバーは、夫々の稜線が一平面を形成し、前記複合基板の機能領域のピッチの２以上の整数倍の間隔を有するものであるエキスパンダ。 Resin is coated on a brittle material substrate having a plurality of functional regions arranged in a longitudinal and lateral direction on one side, and a break line is formed on the brittle material substrate so as to divide the functional regions. An expander used when dividing the composite substrate formed,
A flat base,
A plurality of streak-like expanded bars integrally formed on the flat base,
Each of the expand bars is an expander in which each ridge line forms a plane and has an interval of an integer multiple of 2 or more of the pitch of the functional area of the composite substrate.
テーブルと、
前記テーブル上に配置され、ブレイクラインが形成された面を上面として前記複合基板を保持する弾性支持板と、
平板状のベース及び前記ベース上に一体に形成された筋状の複数のエキスパンドバーを有し、前記各エキスパンドバーは、夫々の稜線が一平面を形成し、前記複合基板の機能領域のピッチの２以上の整数倍の間隔を有するエキスパンダと、
前記テーブルをその面に沿って移動させる移動機構と、
前記複合基板とエキスパンドバーとを平行に保ちつつ、前記弾性支持板上の複合基板の面に向けて前記エキスパンダを昇降させる昇降機構と、を具備する破断装置。 A breaker that breaks a resin layer of a composite substrate in which a resin is coated on a brittle material substrate having a functional region on one side and a break line is formed on the brittle material substrate so as to divide the functional region. ,
Table,
An elastic support plate that is disposed on the table and holds the composite substrate with a surface on which a break line is formed as an upper surface;
A flat base and a plurality of strip-like expanded bars formed integrally on the base, each of the expanded bars having a single ridge line and a pitch of the functional area of the composite substrate. An expander having an integer multiple of 2 or more;
A moving mechanism for moving the table along its surface;
A breaking device comprising: an elevating mechanism that elevates and lowers the expander toward the surface of the composite substrate on the elastic support plate while keeping the composite substrate and the expanding bar in parallel.
弾性支持板上に脆性材料基板が上面となるように前記複合基板を配置し、
ブレイクされたラインに沿って下端に請求項１記載のエキスパンダのエキスパンドバーを対応させて前記エキスパンダを押下することによって樹脂層を破断する分断方法。 A composite substrate in which a resin is coated on a brittle material substrate having a plurality of functional regions arranged in alignment in the vertical direction and the horizontal direction on one surface, and a break line is formed so as to divide each functional region. A dividing method for dividing,
Arranging the composite substrate so that the brittle material substrate is on the elastic support plate,
The dividing method which fractures | ruptures a resin layer by making the expand bar of the expander of Claim 1 respond | correspond to the lower end along the broken line, and pressing down the said expander.
弾性支持板上に脆性材料基板が上面となるように前記複合基板を配置し、
ブレイクされたラインに沿って下端に請求項１記載のエキスパンダのエキスパンドバーを対応させて前記エキスパンダを押下することによって樹脂層に破断を進展させて破断し、
前記複合基板の位置を前記機能領域のピッチ分だけずらせて前記エキスパンダを再び押下することによって樹脂層を破断する分断方法。 A composite substrate in which a resin is coated on a brittle material substrate having a plurality of functional regions arranged in alignment in the vertical direction and the horizontal direction on one surface, and a break line is formed so as to divide each functional region. A dividing method for dividing,
Arranging the composite substrate so that the brittle material substrate is on the elastic support plate,
The resin layer is ruptured by breaking the resin layer by pressing the expander corresponding to the expanded bar of the expander according to claim 1 at the lower end along the broken line,
A cutting method of breaking the resin layer by shifting the position of the composite substrate by the pitch of the functional area and pressing the expander again.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013215395A JP6119550B2 (en) | 2013-10-16 | 2013-10-16 | Expander, breaking device and cutting method |
| KR20140073641A KR20150044368A (en) | 2013-10-16 | 2014-06-17 | Expander, breaking apparatus and dividing method |
| TW103121611A TWI620634B (en) | 2013-10-16 | 2014-06-23 | Expander, breaking device and breaking method |
| CN201410309070.5A CN104552628B (en) | 2013-10-16 | 2014-07-01 | Expander, disrumpent feelings device and method for dividing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013215395A JP6119550B2 (en) | 2013-10-16 | 2013-10-16 | Expander, breaking device and cutting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015079825A JP2015079825A (en) | 2015-04-23 |
| JP6119550B2 true JP6119550B2 (en) | 2017-04-26 |
Family
ID=53011031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013215395A Active JP6119550B2 (en) | 2013-10-16 | 2013-10-16 | Expander, breaking device and cutting method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6119550B2 (en) |
| KR (1) | KR20150044368A (en) |
| CN (1) | CN104552628B (en) |
| TW (1) | TWI620634B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017001180A (en) * | 2016-09-29 | 2017-01-05 | 三星ダイヤモンド工業株式会社 | Surface layer fracturing apparatus of brittle material substrate |
| KR20200133022A (en) * | 2017-11-06 | 2020-11-25 | 가부시키가이샤 도교 세이미쓰 | Method for processing wafer |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6243699B2 (en) * | 2013-10-25 | 2017-12-06 | 三星ダイヤモンド工業株式会社 | Fragment material substrate cutting device |
| JP6862045B2 (en) * | 2017-01-13 | 2021-04-21 | 株式会社ディスコ | Processing method |
| US20200361120A1 (en) * | 2017-10-27 | 2020-11-19 | Mitsuboshi Diamond Industrial Co., Ltd. | Method of segmenting substrate with metal film |
| JP6949371B2 (en) * | 2017-12-15 | 2021-10-13 | 三星ダイヤモンド工業株式会社 | Board divider |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3203365B2 (en) * | 1997-12-02 | 2001-08-27 | 株式会社東京精密 | Work cutting method in dicing machine |
| JP2002151443A (en) * | 2000-11-08 | 2002-05-24 | Victor Co Of Japan Ltd | Device for cleaving semiconductor element |
| JP4210981B2 (en) * | 2002-09-27 | 2009-01-21 | 住友電気工業株式会社 | Cleaving device and cleavage method |
| KR100752551B1 (en) * | 2002-11-22 | 2007-08-29 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | Substrate-cutting system, substrate-producing apparatus, substrate-scribing method, and substrate-cutting method |
| KR100657197B1 (en) * | 2002-11-22 | 2006-12-14 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | Method for dividing substrate and method for manufacturing substrate using such method |
| JP5023547B2 (en) * | 2006-04-28 | 2012-09-12 | 坂東機工株式会社 | Glass plate cutting method and glass plate cutting machine |
| JP5421699B2 (en) * | 2009-09-07 | 2014-02-19 | 三菱電機株式会社 | Semiconductor element separation method and semiconductor element separation apparatus |
-
2013
- 2013-10-16 JP JP2013215395A patent/JP6119550B2/en active Active
-
2014
- 2014-06-17 KR KR20140073641A patent/KR20150044368A/en not_active Application Discontinuation
- 2014-06-23 TW TW103121611A patent/TWI620634B/en not_active IP Right Cessation
- 2014-07-01 CN CN201410309070.5A patent/CN104552628B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017001180A (en) * | 2016-09-29 | 2017-01-05 | 三星ダイヤモンド工業株式会社 | Surface layer fracturing apparatus of brittle material substrate |
| KR20200133022A (en) * | 2017-11-06 | 2020-11-25 | 가부시키가이샤 도교 세이미쓰 | Method for processing wafer |
| KR102520523B1 (en) | 2017-11-06 | 2023-04-12 | 가부시키가이샤 도교 세이미쓰 | Method for processing wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015079825A (en) | 2015-04-23 |
| TW201515800A (en) | 2015-05-01 |
| CN104552628B (en) | 2017-11-10 |
| CN104552628A (en) | 2015-04-29 |
| TWI620634B (en) | 2018-04-11 |
| KR20150044368A (en) | 2015-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6115438B2 (en) | Breaking device and cutting method | |
| JP6119551B2 (en) | Elastic support plate, breaking device and dividing method | |
| JP6119550B2 (en) | Expander, breaking device and cutting method | |
| JP6213134B2 (en) | Elastic support plate, breaking device and dividing method | |
| TWI623402B (en) | Method and device for cutting brittle material substrate | |
| JP5187421B2 (en) | Breaking method for brittle material substrate | |
| JP5991133B2 (en) | Breaking jig for brittle material substrate and breaking method | |
| JP2011218607A (en) | Substrate dividing apparatus and substrate dividing method | |
| JP4818076B2 (en) | Polygonal semiconductor chip manufacturing method and manufacturing apparatus | |
| JP6154713B2 (en) | Method and apparatus for breaking brittle material substrate | |
| JP7340838B2 (en) | Wafer breaking method and breaking device | |
| JP7308549B2 (en) | Processing method of bonded substrate | |
| JP6185812B2 (en) | Method and apparatus for breaking brittle material substrate | |
| TWI592271B (en) | Scratch the brittle substrate with the rule of the substrate, the method of characterization and breaking method | |
| JP2005228909A (en) | Method of manufacturing ceramic wafer | |
| JP2020070202A (en) | Method for dividing bonded substrate | |
| JP2017001180A (en) | Surface layer fracturing apparatus of brittle material substrate | |
| JP2015062257A (en) | Breaking jig and breaking method of fragile material substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160830 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170117 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170228 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170313 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6119550 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |