JP6113741B2 - 研磨用組成物 - Google Patents
研磨用組成物 Download PDFInfo
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- JP6113741B2 JP6113741B2 JP2014544389A JP2014544389A JP6113741B2 JP 6113741 B2 JP6113741 B2 JP 6113741B2 JP 2014544389 A JP2014544389 A JP 2014544389A JP 2014544389 A JP2014544389 A JP 2014544389A JP 6113741 B2 JP6113741 B2 JP 6113741B2
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- Prior art keywords
- polishing
- acid
- polishing composition
- abrasive grains
- barrier layer
- Prior art date
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- PMMYEEVYMWASQN-UHFFFAOYSA-N dl-hydroxyproline Natural products OC1C[NH2+]C(C([O-])=O)C1 PMMYEEVYMWASQN-UHFFFAOYSA-N 0.000 description 1
- MOTZDAYCYVMXPC-UHFFFAOYSA-N dodecyl hydrogen sulfate Chemical compound CCCCCCCCCCCCOS(O)(=O)=O MOTZDAYCYVMXPC-UHFFFAOYSA-N 0.000 description 1
- 229940043264 dodecyl sulfate Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- YSMODUONRAFBET-UHNVWZDZSA-N erythro-5-hydroxy-L-lysine Chemical compound NC[C@H](O)CC[C@H](N)C(O)=O YSMODUONRAFBET-UHNVWZDZSA-N 0.000 description 1
- LTHCIVZEQZAFPI-UHFFFAOYSA-N ethane-1,2-diamine;2-(2-hydroxyphenyl)acetic acid Chemical compound NCCN.OC(=O)CC1=CC=CC=C1O LTHCIVZEQZAFPI-UHFFFAOYSA-N 0.000 description 1
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 229960002743 glutamine Drugs 0.000 description 1
- ZTOMUSMDRMJOTH-UHFFFAOYSA-N glutaronitrile Chemical compound N#CCCCC#N ZTOMUSMDRMJOTH-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 229960002591 hydroxyproline Drugs 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- 150000002473 indoazoles Chemical class 0.000 description 1
- IENZCGNHSIMFJE-UHFFFAOYSA-N indole-5-carboxylic acid Chemical compound OC(=O)C1=CC=C2NC=CC2=C1 IENZCGNHSIMFJE-UHFFFAOYSA-N 0.000 description 1
- 125000003406 indolizinyl group Chemical class C=1(C=CN2C=CC=CC12)* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- AWJUIBRHMBBTKR-UHFFFAOYSA-N iso-quinoline Natural products C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 1
- LRDFRRGEGBBSRN-UHFFFAOYSA-N isobutyronitrile Chemical compound CC(C)C#N LRDFRRGEGBBSRN-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229960003646 lysine Drugs 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- DWPCPZJAHOETAG-UHFFFAOYSA-N meso-lanthionine Natural products OC(=O)C(N)CSCC(N)C(O)=O DWPCPZJAHOETAG-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 229960004452 methionine Drugs 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940078490 n,n-dimethylglycine Drugs 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229960003104 ornithine Drugs 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 229960005190 phenylalanine Drugs 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- AVTYONGGKAJVTE-UHFFFAOYSA-L potassium tartrate Chemical compound [K+].[K+].[O-]C(=O)C(O)C(O)C([O-])=O AVTYONGGKAJVTE-UHFFFAOYSA-L 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229960002429 proline Drugs 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 150000004892 pyridazines Chemical class 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 229960001153 serine Drugs 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 229960002898 threonine Drugs 0.000 description 1
- 229940034208 thyroxine Drugs 0.000 description 1
- XUIIKFGFIJCVMT-UHFFFAOYSA-N thyroxine-binding globulin Natural products IC1=CC(CC([NH3+])C([O-])=O)=CC(I)=C1OC1=CC(I)=C(O)C(I)=C1 XUIIKFGFIJCVMT-UHFFFAOYSA-N 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- 229940038773 trisodium citrate Drugs 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Engineering (AREA)
Description
本発明に係る研磨対象物は、バリア層、金属配線層、および絶縁膜を有する。
研磨用組成物中に含まれる砥粒は、研磨対象物を機械的に研磨する作用を有し、研磨用組成物による研磨対象物の研磨速度を向上させる。
本発明に係る酸化剤の具体例としては、過酸化水素、過酢酸、過炭酸塩、過酸化尿素、過塩素酸;過硫酸ナトリウム、過硫酸カリウム、過硫酸アンモニウムなどの過硫酸塩などが挙げられる。これら酸化剤は、単独でもまたは2種以上混合して用いてもよい。
本発明の研磨用組成物は、各成分を分散または溶解するための分散媒または溶媒として水を含む。他の成分の作用を阻害することを抑制するという観点から、不純物をできる限り含有しない水が好ましく、具体的には、イオン交換樹脂にて不純物イオンを除去した後、フィルタを通して異物を除去した純水や超純水、または蒸留水が好ましい。
研磨用組成物中に金属防食剤を加えることにより、研磨用組成物を用いた研磨で配線の脇に凹みが生じるのをより抑えることができる。また、研磨用組成物を用いて研磨した後の研磨対象物の表面にディッシング等の表面欠陥が生じるのをより抑えることができる。
本発明の研磨用組成物のpHの下限は、2以上であることが好ましい。研磨用組成物のpHが大きくなるにつれて、研磨用組成物による研磨対象物表面の過剰なエッチングが起こる虞を少なくすることができる。
本発明の研磨用組成物は、必要に応じて、錯化剤、防腐剤、防カビ剤、還元剤、水溶性高分子、難溶性の有機物を溶解するための有機溶媒等の他の成分をさらに含んでもよい。以下、好ましい他の成分である、錯化剤について説明する。
研磨用組成物に含まれる錯化剤は、研磨対象物の表面を化学的にエッチングする作用を有し、研磨用組成物による研磨対象物の研磨速度を向上させる。
本発明の研磨用組成物の製造方法は、特に制限されず、例えば、砥粒、酸化剤、金属防食剤、および必要に応じて他の成分を、水中で攪拌混合することにより得ることができる。
上述のように、本発明の研磨用組成物は、バリア層、金属配線層、および絶縁膜を有する研磨対象物の研磨に好適に用いられる。よって、本発明は、バリア層、金属配線層、および絶縁膜を有する研磨対象物を本発明の研磨用組成物で研磨する研磨方法を提供する。また、本発明は、バリア層、金属配線層、および絶縁膜を有する研磨対象物を前記研磨方法で研磨する工程を含む基板の製造方法を提供する。
砥粒として下記表2に示す条件のコロイダルシリカ、酸化剤として過酸化水素 組成物に対して0.6重量%、金属防食剤として1H−BTA 1.2g/L(組成物)を、それぞれ前記の濃度となるように水中で攪拌混合し(混合温度:約25℃、混合時間:約10分)、研磨用組成物を調製した。組成物のpHは、pH調整剤として硝酸を加えながらpHメータにより確認し、pH2.10に調整した。
砥粒のアスペクト比の測定;
研磨用組成物の調整に使用した砥粒としてのコロイダルシリカのアスペクト比は、走査型電子顕微鏡によるコロイダルシリカ粒子の画像に外接する最小の長方形の長辺の長さを同じ長方形の短辺の長さで除することにより得られる値を測定し、コロイダルシリカ粒子500個の平均を算出した。なお、測定は、走査型電子顕微鏡で取得した画像について画像解析ソフトウエアを用いて求めた。
研磨対象物は、シリコン基板上に、Cu膜、Ta膜、およびTEOS膜を成膜した12インチウェハを使用した。得られた研磨用組成物を用い、研磨対象物の表面を下記表1に示す第1の研磨条件で60秒間研磨した際の研磨速度を測定した。研磨速度は、直流4探針法を原理とするシート抵抗測定器を用いて測定される研磨前後のそれぞれの膜の厚みの差を、研磨時間で除することにより求めた。測定される研磨速度については、Cu膜の値が200Å/min以上1000Å/min以下、Ta膜の値が200Å/min以上、TEOS膜の値が500Å/min以上、およびTEOS膜ファング量の値が50nm以下であれば実用的なレベルである。
得られた研磨用組成物を用い、Cu/TEOSパターンウェハ(研磨前のCu膜厚700nm、トレンチ深さ300nm)の表面を、上記表1に記載の第1の研磨条件で銅膜厚が250nmになるまで研磨した。その後、研磨後の銅パターンウェハ表面を、同じ研磨用組成物を用いて、上記表1に記載の第2の研磨条件でバリア層(材料:Ta)が露出するまで研磨した。このようにして2段階の研磨が行われた後のCu/TEOSパターンウェハの0.25μm幅の金属埋め込み配線部と絶縁膜部が交互に形成されるパターン部と周辺の絶縁膜部との境界領域でファングの測定を行った。なお、ファングの測定は、触針式の段差測定装置を用いた。評価結果を下記表2に示す。測定されるファング量の値が50nm以下であれば実用的なレベルである。
砥粒として下記表5に示す条件のコロイダルシリカ、酸化剤として過酸化水素 組成物に対して1.2重量%、金属防食剤として2−2’[(メチル−1Hベンゾトリアゾール−1−イル)メチル]イミノビスエタノール 0.29g/L(組成物)、ラウリル硫酸アンモニウム 0.22g/L(組成物)、ポリオキシアルキレンアルキルエーテル 0.63g/L(組成物)、錯化剤としてのグリシンを10g/L(組成物)、それぞれ前記の濃度となるように水中で攪拌混合し(混合温度:約25℃、混合時間:約20分)、研磨用組成物を調製した。組成物のpHは、pH調整剤として水酸化カリウムを加えながらpHメータにより確認し、pH7.2に調整した。
研磨対象物は、膜厚1.5μmの金属層(銅膜)を表面に形成したシリコン基板(BTW)を用いた。研磨対象物の表面を下記表3に示す第1の研磨条件で60秒間研磨した際の研磨速度を測定した。研磨速度は、直流4探針法を原理とするシート抵抗測定器を用いて測定される研磨前後のそれぞれの膜の厚みの差を、研磨時間で除することにより求めた。測定される研磨速度については、Cu膜の値が5000Å/min以上であれば実用的なレベルである。
得られた研磨用組成物を用い、銅パターンウェハ(Cu/TEOSパターンウェハ、研磨前の銅膜厚700nm、トレンチ深さ300nm)の表面を、上記表3に記載の第1の研磨条件で銅膜厚が200nmになるまで研磨した。その後、研磨後の銅パターンウェハ表面を、同じ研磨用組成物を用いて、下記表4に記載の第2の研磨条件でバリア層(材料:タンタル)が露出するまで研磨した。このようにして2段階の研磨が行われた後の銅パターンウェハの100μm幅の配線と100μm幅の絶縁膜(材料:タンタル)とが交互に並んだ領域において、原子間力顕微鏡を用いてディッシング量(ディッシング深さ)を測定した。評価結果を下記表5に示す。なお、測定されるディッシング量の値が400Å以下であれば実用的なレベルであり、”not clear”とあるのは、第2の研磨条件でバリア層が露出するまで研磨が進行しない状態を示す。
12 絶縁膜、
13 バリア層、
14 金属配線層。
Claims (8)
- バリア層、金属配線層、および絶縁膜を有する研磨対象物の金属配線層を研磨する用途で使用される研磨用組成物であって、
砥粒と、
酸化剤と、
金属防食剤と、
pH調整剤と、
水と、
を含む研磨用組成物であって、前記砥粒のアスペクト比が1.22以下であり、かつ、前記砥粒のレーザー回折散乱法により求められる粒度分布において微粒子側から積算粒子重量が全粒子重量の90%に達するときの粒子の直径D90と全粒子の全粒子重量の10%に達するときの粒子の直径D10の比D90/D10が1.5以上3.0以下である、研磨用組成物。 - 前記砥粒がコロイダルシリカである、請求項1に記載の研磨用組成物。
- 前記砥粒の平均一次粒子径が20nm〜200nmである、請求項1または2に記載の研磨用組成物。
- 前記研磨対象物のバリア層および/または絶縁膜をさらに研磨する用途で使用される、請求項1〜3のいずれか1項に記載の研磨用組成物。
- 前記バリア層がタンタルまたは貴金属を含む、請求項4に記載の研磨用組成物。
- 請求項1〜3のいずれか1項に記載の研磨用組成物を用いて、前記研磨対象物の金属配線層を研磨する、研磨方法。
- 請求項4または5に記載の研磨用組成物を用いて、前記研磨用組成物の金属配線層ならびにバリア層および/または前記絶縁膜を研磨する、研磨方法。
- 請求項6に記載の研磨方法で前記研磨対象物の金属配線層を研磨する工程;ならびに
請求項7に記載の研磨方法で前記研磨対象物の金属配線層ならびにバリア層および/または前記絶縁膜を研磨する工程、
を含む、基板の製造方法。
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