JP6100248B2 - 薄膜電池のマスクレス製造 - Google Patents
薄膜電池のマスクレス製造 Download PDFInfo
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- JP6100248B2 JP6100248B2 JP2014516003A JP2014516003A JP6100248B2 JP 6100248 B2 JP6100248 B2 JP 6100248B2 JP 2014516003 A JP2014516003 A JP 2014516003A JP 2014516003 A JP2014516003 A JP 2014516003A JP 6100248 B2 JP6100248 B2 JP 6100248B2
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- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
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Description
本出願は2011年6月17日に出願された米国仮特許出願第61/498,484号の利益を主張するものであり、その開示内容全体が引用により本明細書に組み込まれている。
本発明の実施形態は、一般的に薄膜電池のためのシャドーマスクレス製作プロセスに関する。
さらに、プロセス条件は上記とは異なる場合がある。特に、基板側からのレーザーパターニングの場合にプロセスウィンドウが非常に大きくなることが期待される。基板側からのレーザーパターニングの利点を、エリアレーザーのアブレーションシステムを使用する場合にも見込むことができる。
509 ブランケットのボンディングパッド層
510 ブランケット誘電体
511 ブランケットのボンディングパッド
520 レーザー
Claims (13)
- 薄膜電池を製造する方法であって、
カソード電流コレクタ層、カソード層、電解質層、アノード層、及びアノード電流コレクタ層を含む、ブランケット層の第1のスタックを基板上に堆積する段階と、
前記第1のスタックをレーザーダイパターニングして第2のスタックを形成する段階と、
前記第2のスタックをレーザーパターニングしてデバイススタックを形成する段階であって、前記レーザーパターニングは、カソード電流コレクタ領域と該カソード電流コレクタ領域に隣接する前記電解質層の一部分とを露出させ、前記第2のスタックの前記レーザーパターニングは、前記電解質層の前記一部分の厚さの一部を除去して前記電解質層に段差を形成する段階と、
前記デバイススタック上に封止層及びボンディングパッド層を堆積してパターニングする段階と、
を含む方法。 - 前記ブランケット層の第1のスタックの堆積を、真空を壊すこと無く完了する、請求項1に記載の方法。
- 前記ブランケット層の第1のスタックを堆積する前に、前記基板上にブランケットのダイパターニング補助層を堆積する段階をさらに含み、前記ブランケット層の第1のスタックは前記ダイパターニング補助層上に堆積され、前記基板は、レーザー光に対して透過的であり、前記ダイパターニング補助層は、前記ダイパターニング補助層と前記基板との間の熱応力不整合を実現するための材料層を有する、請求項1に記載の方法。
- 前記レーザーダイパターニングは、前記基板を透過して前記ダイパターニング補助層の一部をレーザー照射すること、及び前記第1のスタックの対応部分を熱応力不整合誘起アブレーションすることを含む、請求項3に記載の方法。
- 前記第2のスタックのレーザーパターニングは、前記カソード電流コレクタ領域の表面を覆う前記カソード層の厚さの一部を残す段階を含む、請求項1に記載の方法。
- 前記ボンディングパッド層をマスクを使用して堆積する、請求項1に記載の方法。
- 前記ボンディングパッド層及び前記封止層を、前記デバイススタック上にブランケット堆積してレーザーパターン形成する、請求項1に記載の方法。
- 前記ボンディングパッド層を、前記薄膜電池の活性層を環境からさらに保護するために、前記封止層を完全に被覆するようにパターン形成する、請求項7に記載の方法。
- 薄膜電池の製造方法であって、
電流コレクタ層、カソード層、及び電解質層を、基板上にブランケット堆積し、連続的かつ選択的にレーザーパターニングして、第1のスタックを形成する段階と、
前記第1のスタック上にリチウムアノードを形成して第2のスタックを形成する段階と、
前記第2のスタック上にボンディングパッド層をブランケット堆積し、選択的にレーザーパターニングして第3のスタックを形成する段階と、
前記第3のスタックをレーザーダイパターニングする段階と、
を含む方法。 - 前記リチウムアノードを形成する段階は、リチウムアノード層を前記第1のスタック上に堆積して選択的にレーザーパターニングする段階を含む、請求項9に記載の方法。
- 前記リチウムアノードを形成する段階は、マスクを使用して前記第1のスタック上にリチウムを堆積する段階を含む、請求項9に記載の方法。
- 基板上に前記電流コレクタ層、前記カソード層、及び前記電解質層をブランケット堆積して連続的かつ選択的にレーザーパターニングする前に、前記基板上にブランケットのダイパターニング補助層を堆積する段階をさらに含み、ブランケット層の第1のスタックは、前記ダイパターニング補助層上に堆積され、前記基板は、レーザー光に対して透過的であり、前記ダイパターニング補助層は、該ダイパターニング補助層と前記基板との間に熱応力不整合を実現するための材料層を含む、請求項9に記載の方法。
- 前記レーザーダイパターニングは、前記基板を透過して前記ダイパターニング補助層の一部をレーザー照射すること、及び前記第1のスタックの対応部分を熱応力不整合誘起アブレーションすることを含む、請求項12に記載の方法。
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WO2013106082A3 (en) | 2013-10-17 |
JP6283433B2 (ja) | 2018-02-21 |
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