JP6096756B2 - 寿命が長いテクスチャ加工チャンバ部品及びその作製方法 - Google Patents
寿命が長いテクスチャ加工チャンバ部品及びその作製方法 Download PDFInfo
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- JP6096756B2 JP6096756B2 JP2014505204A JP2014505204A JP6096756B2 JP 6096756 B2 JP6096756 B2 JP 6096756B2 JP 2014505204 A JP2014505204 A JP 2014505204A JP 2014505204 A JP2014505204 A JP 2014505204A JP 6096756 B2 JP6096756 B2 JP 6096756B2
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- 238000012545 processing Methods 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 230000014759 maintenance of location Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims 1
- 239000011324 bead Substances 0.000 description 14
- 238000005422 blasting Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 238000005755 formation reaction Methods 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Treatment Of Fiber Materials (AREA)
Description
102 テクスチャ加工表面
104 特徴部
Claims (18)
- 堆積膜の保持力を高めるようにパターン化された表面を有する物品であって、
複数の工学的特徴部として形成されたマクロテクスチャ加工された表面を有する処理チャンバ部品を含み、前記工学的特徴部は壁部によって分離され、かつ、前記テクスチャ加工された表面にわたって見通し面を遮るように千鳥状に配置されている、ことを特徴とする物品。 - 前記工学的特徴部は、所定のパターンで配置される、
ことを特徴とする請求項1に記載の物品。 - 前記工学的特徴部は、約100μm〜約200μmの深さを有する、
ことを特徴とする請求項1に記載の物品。 - 前記工学的特徴部は、約100μm〜約200μmの幅を有する、
ことを特徴とする請求項3に記載の物品。 - 前記工学的特徴部は、平均幅と深さの比率が約1.0:0.5〜約0.5:1.0である、
ことを特徴とする請求項4に記載の物品。 - 前記工学的特徴部は、ハニカムパターンに形成されている、
ことを特徴とする請求項1に記載の物品。 - 前記工学的特徴部は密集した六角パターンである、
ことを特徴とする請求項1に記載の物品。 - 前記工学的特徴部は、独立した支柱を形成する、
ことを特徴とする請求項1に記載の物品。 - 前記支柱は、テクスチャ加工された表面にわたって見通し面の形成を防ぐように配置される、
ことを特徴とする請求項8に記載の物品。 - 前記テクスチャ加工された表面を形成する工学的特徴部は、約100〜約300RAの表面仕上げにマイクロテクスチャ加工されている、
ことを特徴とする請求項1に記載の物品。 - 前記テクスチャ加工された表面を形成する前記工学的特徴部は、前記テクスチャ加工された表面にわたる均一な形状、サイズ及び分布のうちの少なくとも1つを有する、
ことを特徴とする請求項1に記載の物品。 - 堆積膜の保持力を高めるようにパターン化された表面を有する物品であって、
分離された複数の工学的特徴部として形成されたマクロテクスチャ加工された表面を有する処理チャンバ部品を含み、前記工学的特徴部は前記テクスチャ加工された表面にわたって見通し面を遮るように千鳥状に、かつ、所定のパターンで配置され、前記工学的特徴部は、約100〜約300RAの表面仕上げにマイクロテクスチャ加工された前記テクスチャ加工された表面を形成する、
ことを特徴とする物品。 - 前記工学的特徴部は、ハニカムパターンを形成する壁によって囲まれる、
ことを特徴とする請求項12に記載の物品。 - 前記工学的特徴部は密集した六角パターンである、
ことを特徴とする請求項12に記載の物品。 - 前記工学的特徴部は、独立した支柱を形成する、
ことを特徴とする請求項12に記載の物品。 - 前記支柱は、テクスチャ加工表面を横切る見通し面の形成を防ぐように配置される、
ことを特徴とする請求項15に記載の物品。 - 半導体チャンバ部品の作製方法であって、
チャンバ部品の表面をマスクで覆うステップと、
前記チャンバ部品の表面から材料を除去して、テクスチャ加工された表面を定める複数の工学的特徴部を形成するステップと、
を含み、前記工学的特徴部は、テクスチャ加工された表面にわたって見通し面の形成を防ぐように配置され、
前記マスクは、現像領域、部分的現像領域、及び非現像領域を含む、
ことを特徴とする方法。 - 前記チャンバ部品の前記表面から材料を除去するステップは、
前記部分的現像領域を浸食して、形成中の前記工学的特徴部に隣接する前記チャンバ部品の前記表面を露出させるステップと、
前記工学的特徴部を取り囲む構造の丸みのある縁部を形成するステップと、
を含むことを特徴とする請求項17に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161474268P | 2011-04-11 | 2011-04-11 | |
US61/474,268 | 2011-04-11 | ||
PCT/US2012/032839 WO2012142007A2 (en) | 2011-04-11 | 2012-04-10 | Extended life textured chamber components and method for fabricating same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014518590A JP2014518590A (ja) | 2014-07-31 |
JP6096756B2 true JP6096756B2 (ja) | 2017-03-15 |
Family
ID=46966333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014505204A Active JP6096756B2 (ja) | 2011-04-11 | 2012-04-10 | 寿命が長いテクスチャ加工チャンバ部品及びその作製方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120258280A1 (ja) |
JP (1) | JP6096756B2 (ja) |
KR (1) | KR101919429B1 (ja) |
CN (1) | CN103430280A (ja) |
TW (1) | TWI601223B (ja) |
WO (1) | WO2012142007A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020163427A1 (en) * | 2019-02-06 | 2020-08-13 | Lam Research Corporation | Textured silicon semiconductor processing chamber components |
Families Citing this family (20)
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US9101954B2 (en) * | 2013-09-17 | 2015-08-11 | Applied Materials, Inc. | Geometries and patterns for surface texturing to increase deposition retention |
US20160349621A1 (en) * | 2014-12-15 | 2016-12-01 | Applied Materials, Inc. | Methods for texturing a chamber component and chamber components having a textured surface |
MX2017008552A (es) * | 2014-12-24 | 2018-03-15 | Space Data Corp | Tecnicas para lanzamiento de globo/aeronave inteligente y ubicación de ventana de recuperacion. |
DE102015101343A1 (de) * | 2015-01-29 | 2016-08-18 | Aixtron Se | CVD-Reaktor mit dreidimensional strukturierter Prozesskammerdecke |
US11569069B2 (en) * | 2015-02-06 | 2023-01-31 | Applied Materials, Inc. | 3D printed chamber components configured for lower film stress and lower operating temperature |
WO2016126403A1 (en) * | 2015-02-06 | 2016-08-11 | Applied Materials, Inc. | 3d printed chamber components configured for lower film stress and lower operating temperature |
US9636714B2 (en) | 2015-02-07 | 2017-05-02 | Applied Materials, Inc. | Compression molded articles employing circumferential surfaces having friction-enhancing patterns to contact substrates during wet chemical processes |
CN108028173A (zh) * | 2015-07-23 | 2018-05-11 | 霍尼韦尔国际公司 | 改进的溅射线圈产品和制作方法 |
DE102016110408A1 (de) | 2016-06-06 | 2017-12-07 | Aixtron Se | Beschichteter Kohlenstoffkörper in einem CVD-Reaktor |
CN210156345U (zh) * | 2016-09-13 | 2020-03-17 | 应用材料公司 | 用于处理腔室的腔室部件、用于处理腔室的屏蔽的设计膜以及处理腔室 |
US10434604B2 (en) | 2016-10-14 | 2019-10-08 | Applied Materials, Inc. | Texturizing a surface without bead blasting |
US10655212B2 (en) | 2016-12-15 | 2020-05-19 | Honeywell Internatonal Inc | Sputter trap having multimodal particle size distribution |
US20180211819A1 (en) * | 2017-01-20 | 2018-07-26 | Honeywell International Inc. | Particle trap for sputtering coil and method of making |
JP2019009185A (ja) * | 2017-06-21 | 2019-01-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
US11685990B2 (en) * | 2017-12-08 | 2023-06-27 | Applied Materials, Inc. | Textured processing chamber components and methods of manufacturing same |
SG11202005688TA (en) * | 2018-01-08 | 2020-07-29 | Lam Res Corp | Components and processes for managing plasma process byproduct materials |
CN113678226B (zh) * | 2019-02-21 | 2024-08-20 | 朗姆研究公司 | 易耗部件、构建其工程化表面的方法及等离子体处理室 |
WO2019203369A1 (ja) * | 2019-05-15 | 2019-10-24 | 日本碍子株式会社 | 真空容器用セラミック構造材及びその製法 |
US11739411B2 (en) * | 2019-11-04 | 2023-08-29 | Applied Materials, Inc. | Lattice coat surface enhancement for chamber components |
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JP2001509214A (ja) * | 1997-01-16 | 2001-07-10 | ボトムフィールド,ロジャー,エル. | 蒸気蒸着構成要素及び対応する方法 |
JP3815591B2 (ja) * | 1999-08-11 | 2006-08-30 | アルバックマテリアル株式会社 | 成膜装置用部品の製造方法および成膜装置用部品 |
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-
2012
- 2012-04-09 US US13/442,816 patent/US20120258280A1/en not_active Abandoned
- 2012-04-10 CN CN2012800131115A patent/CN103430280A/zh active Pending
- 2012-04-10 JP JP2014505204A patent/JP6096756B2/ja active Active
- 2012-04-10 KR KR1020137029747A patent/KR101919429B1/ko active IP Right Grant
- 2012-04-10 WO PCT/US2012/032839 patent/WO2012142007A2/en active Application Filing
- 2012-04-11 TW TW101112838A patent/TWI601223B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020163427A1 (en) * | 2019-02-06 | 2020-08-13 | Lam Research Corporation | Textured silicon semiconductor processing chamber components |
Also Published As
Publication number | Publication date |
---|---|
US20120258280A1 (en) | 2012-10-11 |
TWI601223B (zh) | 2017-10-01 |
KR20140027249A (ko) | 2014-03-06 |
WO2012142007A2 (en) | 2012-10-18 |
JP2014518590A (ja) | 2014-07-31 |
CN103430280A (zh) | 2013-12-04 |
TW201308471A (zh) | 2013-02-16 |
KR101919429B1 (ko) | 2018-11-19 |
WO2012142007A3 (en) | 2013-01-10 |
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