JP6095734B2 - 構造を製作する方法 - Google Patents
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G03F7/32—Liquid compositions therefor, e.g. developers
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/30438—Registration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
- H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
12・・・書込区画
14・・・参照構造要素
16・・・実際位置
18・・・目標位置
Claims (13)
- リソグラフィ材料で構造を製作する方法であって、
前記構造は露光装置の書込ビームによって複数の部分構造(10)がシーケンシャルに書込まれることによってリソグラフィ材料で定義され、部分構造(10)を書込むために前記露光装置の書込区画(12)がシーケンシャルに変位して位置決めされて、書込区画(12)で部分構造(10)がそれぞれ書込まれ、書込区画(12)を位置決めするために参照構造が撮像式の測定装置によってリソグラフィ材料で検知される、そのような方法において、
そのつど位置決めされる書込区画(12)で部分構造(10)の書込の途中に当該部分構造(10)に付属する少なくとも1つの参照構造要素(14)が書込ビームによってリソグラフィ材料で作成され、
この参照構造要素(14)は書込区画(12)の変位後に次の部分構造(10)の書込のために撮像式の測定装置によって検知されることを特徴とする方法。
- 書込ビームの局所的な照射によって光学特性を変化させるリソグラフィ材料が使用され、前記参照構造要素(14)はリソグラフィ材料の局所的に変化した光学特性によって認識されることを特徴とする、請求項1に記載の方法。
- 事前に定義された参照構造要素(14)の位置および/または形状が書込区画(12)の変位後に検知され、書込区画(12)の位置決めおよび/または書込区画で書込まれるべき部分構造(10)が、前記参照構造要素(14)の認識された位置および/または形状に依存して修正されることを特徴とする、請求項1または2に記載の方法。
- 参照構造要素(14)を作成するための書込ビームは部分構造(10)を書込むための書込ビームよりも低い強度を有していることを特徴とする、請求項1〜3のいずれか1項に記載の方法。
- 参照構造要素(14)は次の部分構造(10)の書込のときに上書きされることを特徴とする、請求項1〜4のいずれか1項に記載の方法。
- 書込まれたそれぞれ異なる部分構造(10)は互いに接しないように構成され、参照構造要素(14)はそれぞれ異なる部分構造(10)の間に配置されるように作成されることを特徴とする、請求項1〜5のいずれか1項に記載の方法。
- 部分構造(10)の書込後に現像プロセスが実行されて、前記現像プロセスのときに参照構造要素(14)が除去されることを特徴とする、請求項1〜6のいずれか1項に記載の方法。
- 書込区画(12)の変位と位置決めは、位置決め装置により、リソグラフィ材料を受容している基板が定置の露光装置に対して相対的に変移させることによって行われ、および/または露光装置が定置の基板に対して相対的に変移させることを特徴とする、請求項1〜7のいずれか1項に記載の方法。
- 書込区画(12)の内部で撮像式の測定装置による画像記録が行われて、参照構造要素(14)を認識するために画像評価プロセスが実行されることを特徴とする、請求項1〜8のいずれか1項に記載の方法。
- 参照構造要素(14)を検知するために書込区画(12)が書込ビームによって走査され、画像作成のために後方散乱された放射、反射された放射、透過した放射、または蛍光により生成された放射が測定光学系によって検知されることを特徴とする、請求項1〜9のいずれか1項に記載の方法。
- 参照構造要素(14)を検知するために書込区画(12)を含む視界が測定カメラによって撮影されることを特徴とする、請求項1〜10のいずれか1項に記載の方法。
- 書込区画(12)の中での参照構造要素(14)の位置および/または形状はそれぞれ異なる部分構造(10)について別様に選択されることを特徴とする、請求項1〜11のいずれか1項に記載の方法。
- 書込ビームにより、書込区画(12)の平面および書込区画(12)の平面に対して垂直な上下方向に沿って変位可能である焦点領域で局所的な照射が行われることを特徴とする、請求項1〜12のいずれか1項に記載の方法。
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DE102014215439.1A DE102014215439B4 (de) | 2014-08-05 | 2014-08-05 | Verfahren zum Herstellen einer Struktur |
DE102014215439.1 | 2014-08-05 |
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JP2016038575A JP2016038575A (ja) | 2016-03-22 |
JP6095734B2 true JP6095734B2 (ja) | 2017-03-15 |
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US (1) | US9798248B2 (ja) |
JP (1) | JP6095734B2 (ja) |
CN (1) | CN105334704B (ja) |
DE (2) | DE202014011053U1 (ja) |
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DE102016014229A1 (de) | 2016-11-30 | 2018-05-30 | Giesecke+Devrient Currency Technology Gmbh | Herstellverfahren für Druckplatten für den Stichtiefdruck sowie Druckplatte für den Stichtiefdruck |
US10413167B2 (en) | 2017-05-30 | 2019-09-17 | Synaptive Medical (Barbados) Inc. | Micro-optical surgical probes and micro-optical probe tips and methods of manufacture therefor |
CN113865915B (zh) * | 2021-09-18 | 2023-10-13 | 长江存储科技有限责任公司 | 一种切片样品的检测方法 |
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JP2535889B2 (ja) | 1987-03-26 | 1996-09-18 | 株式会社ニコン | 投影光学装置 |
JP3198310B2 (ja) | 1993-01-06 | 2001-08-13 | 株式会社ニコン | 露光方法及び装置 |
WO1999066370A1 (fr) * | 1998-06-17 | 1999-12-23 | Nikon Corporation | Procede relatif a l'elaboration d'un masque |
GB2383140A (en) * | 2001-12-13 | 2003-06-18 | Zarlink Semiconductor Ltd | Exposure positioning in photolithography |
DE10243413A1 (de) * | 2002-06-12 | 2003-12-24 | Giesecke & Devrient Gmbh | Verfahren zur Herstellung von Gitterbildern |
US7525109B2 (en) * | 2006-04-12 | 2009-04-28 | Hitachi Global Storage Technologies Netherlands B.V. | Method for writing a large-area closed curvilinear pattern with a cartesian electron beam writing system |
DE102006036172B4 (de) | 2006-07-31 | 2018-11-22 | Carl Zeiss Microscopy Gmbh | Optische Anordnung zur sequentiellen Positionierung von Arbeitsfeldern auf einem Objekt |
US20080268350A1 (en) | 2007-04-30 | 2008-10-30 | Macronix International Co., Ltd. | Semiconductor structure |
US7687210B2 (en) * | 2007-06-25 | 2010-03-30 | International Business Machines Corporation | Space tolerance with stitching |
JP5117243B2 (ja) | 2008-03-27 | 2013-01-16 | 株式会社オーク製作所 | 露光装置 |
CN102156392A (zh) | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | 光刻机对准参数的检测装置及其检测方法 |
US8440372B2 (en) | 2011-02-03 | 2013-05-14 | Micrel, Inc. | Single field zero mask for increased alignment accuracy in field stitching |
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2014
- 2014-08-05 DE DE202014011053.0U patent/DE202014011053U1/de active Active
- 2014-08-05 DE DE102014215439.1A patent/DE102014215439B4/de active Active
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2015
- 2015-07-16 US US14/801,427 patent/US9798248B2/en active Active
- 2015-07-17 JP JP2015143132A patent/JP6095734B2/ja active Active
- 2015-08-04 CN CN201510472718.5A patent/CN105334704B/zh active Active
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DE102014215439B4 (de) | 2017-08-24 |
JP2016038575A (ja) | 2016-03-22 |
DE102014215439A1 (de) | 2016-02-11 |
US20160041477A1 (en) | 2016-02-11 |
CN105334704B (zh) | 2018-08-28 |
US9798248B2 (en) | 2017-10-24 |
CN105334704A (zh) | 2016-02-17 |
DE202014011053U1 (de) | 2017-07-26 |
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