JP6093633B2 - Bonding method of electronic parts - Google Patents
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- JP6093633B2 JP6093633B2 JP2013089404A JP2013089404A JP6093633B2 JP 6093633 B2 JP6093633 B2 JP 6093633B2 JP 2013089404 A JP2013089404 A JP 2013089404A JP 2013089404 A JP2013089404 A JP 2013089404A JP 6093633 B2 JP6093633 B2 JP 6093633B2
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- 238000000034 method Methods 0.000 title claims description 23
- 229910052709 silver Inorganic materials 0.000 claims description 54
- 239000004332 silver Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 44
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 40
- 239000002245 particle Substances 0.000 claims description 12
- 239000010419 fine particle Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000011164 primary particle Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- 239000002612 dispersion medium Substances 0.000 claims description 5
- 238000005452 bending Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- MCORDGVZLPBVJB-UHFFFAOYSA-N 2-(2-butoxyethoxy)acetic acid Chemical compound CCCCOCCOCC(O)=O MCORDGVZLPBVJB-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- BEFDCLMNVWHSGT-UHFFFAOYSA-N ethenylcyclopentane Chemical compound C=CC1CCCC1 BEFDCLMNVWHSGT-UHFFFAOYSA-N 0.000 description 2
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229940075582 sorbic acid Drugs 0.000 description 2
- 235000010199 sorbic acid Nutrition 0.000 description 2
- 239000004334 sorbic acid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Description
本発明は、電子部品の接合方法に関し、特に、銀接合層により電子部品を基板に接合する方法に関する。 The present invention relates to a method for bonding electronic components, and more particularly, to a method for bonding electronic components to a substrate by a silver bonding layer.
近年、銀微粒子を含む銀ペーストを接合材として使用し、被接合物間に接合材を介在させ、被接合物間に圧力を加えながら所定時間加熱して、接合材中の銀を焼結させて、被接合物同士を接合することが提案されている（例えば、特許文献１参照）。 In recent years, silver paste containing silver fine particles has been used as a bonding material, the bonding material is interposed between the objects to be bonded, and heated for a predetermined time while applying pressure between the objects to be bonded to sinter the silver in the bonding material. Thus, it has been proposed to join objects to be joined (see, for example, Patent Document 1).
このような接合材を使用してＣｕ基板などの金属板上にＳｉデバイスなどの電子部品を固定する場合、銀微粒子が溶媒に分散した銀ペーストを基板上に塗布した後、加熱して溶媒を除去することにより、基板上に予備乾燥膜を形成し、この予備乾燥膜上に電子部品を配置した後、電子部品に圧力を加えながら加熱することにより、銀接合層を介して電子部品を基板に接合することができる。 When fixing electronic parts such as Si devices on a metal plate such as a Cu substrate using such a bonding material, a silver paste in which silver fine particles are dispersed in a solvent is applied on the substrate, and then heated to remove the solvent. The pre-dried film is formed on the substrate by removing the electronic component, and after placing the electronic component on the pre-dried film, the electronic component is heated via the silver bonding layer by heating the electronic component while applying pressure. Can be joined.
しかし、この接合方法では、予備乾燥膜は、銀ペーストの分散不良や印刷不良などにより、予備乾燥膜の表面のレベリングが必ずしも良好でないので、電子部品を基板に良好に接合するためには、電子部品に加える圧力を高くして、予備乾燥膜の表面を平坦にする必要がある。そのため、近年のＳｉチップのように、大きく且つ薄い電子部品では、接合時の荷重を高くすることによりＳｉチップの表面が反ってしまうという問題がある。 However, in this bonding method, the pre-dried film does not necessarily have a good leveling on the surface of the pre-dried film due to poor dispersion or printing defects of the silver paste. It is necessary to increase the pressure applied to the part to flatten the surface of the pre-dried film. Therefore, a large and thin electronic component such as a recent Si chip has a problem that the surface of the Si chip is warped by increasing the load during bonding.
したがって、本発明は、このような従来の問題点に鑑み、電子部品を基板に接合する際に電子部品に加える圧力を低くしても、電子部品を基板に良好に接合することができる、電子部品の接合方法を提供することを目的とする。 Therefore, in view of such a conventional problem, the present invention enables an electronic component to be satisfactorily bonded to a substrate even when the pressure applied to the electronic component is reduced when the electronic component is bonded to the substrate. It aims at providing the joining method of components.
本発明者らは、上記課題を解決するために鋭意研究した結果、銀粒子を含む銀ペーストを基板上に塗布して加熱することにより、基板上に予備乾燥膜を形成し、この予備乾燥膜を予備加圧して予備乾燥膜の表面を平坦化し、この平坦化した予備乾燥膜の表面に電子部品を配置した後、電子部品に圧力を加えながら加熱することにより、銀接合層を介して電子部品を基板に接合すれば、電子部品を基板に接合する際に電子部品に加える圧力を低くしても、電子部品を基板に良好に接合することができることを見出し、本発明を完成するに至った。 As a result of intensive studies to solve the above problems, the inventors of the present invention formed a preliminary dry film on the substrate by applying a silver paste containing silver particles on the substrate and heating, and this preliminary dry film. Is pre-pressurized to flatten the surface of the pre-dried film, and after placing the electronic component on the surface of the flattened pre-dried film, the electronic component is heated while applying pressure to the electronic component through the silver bonding layer. If the component is bonded to the substrate, it will be found that the electronic component can be bonded to the substrate satisfactorily even if the pressure applied to the electronic component is reduced when bonding the electronic component to the substrate, and the present invention has been completed. It was.
すなわち、本発明による電子部品の接合方法は、銀粒子を含む銀ペーストを基板上に塗布して加熱することにより、基板上に予備乾燥膜を形成し、この予備乾燥膜を予備加圧して予備乾燥膜の表面を平坦化し、この平坦化した予備乾燥膜の表面に電子部品を配置した後、電子部品に圧力を加えながら加熱することにより、銀接合層を介して電子部品を基板に接合することを特徴とする。 That is, in the method for joining electronic components according to the present invention, a silver paste containing silver particles is applied onto a substrate and heated to form a pre-dried film on the substrate, and the pre-dried film is pre-pressed to prepare a pre-dried film. After flattening the surface of the dry film and placing the electronic component on the surface of the flattened pre-dried film, the electronic component is bonded to the substrate through the silver bonding layer by heating while applying pressure to the electronic component. It is characterized by that.
この電子部品の接合方法において、予備加圧の際の圧力は２ＭＰａ以上であるのが好ましい。また、電子部品を基板に接合する際に電子部品に加える圧力は、予備加圧の際の圧力以下であるのが好ましく、２ＭＰａ以下であるのが好ましい。平坦化した予備乾燥膜の表面の表面粗さＲａは１μｍ以下であるのが好ましい。銀ペーストは、銀粒子が分散媒に分散した接合材であるのが好ましく、銀粒子は、平均一次粒子径１〜２００ｎｍの銀微粒子であるのが好ましい。 In this method for joining electronic components, the pressure at the time of pre-pressing is preferably 2 MPa or more. Further, the pressure applied to the electronic component when bonding the electronic component to the substrate is preferably equal to or lower than the pressure during pre-pressurization, and preferably equal to or lower than 2 MPa. The surface roughness Ra of the surface of the flattened pre-dried film is preferably 1 μm or less. The silver paste is preferably a bonding material in which silver particles are dispersed in a dispersion medium, and the silver particles are preferably silver fine particles having an average primary particle diameter of 1 to 200 nm.
本発明によれば、電子部品を基板に接合する際に電子部品に加える圧力を低くしても、電子部品を基板に良好に接合することができる。 ADVANTAGE OF THE INVENTION According to this invention, even if the pressure applied to an electronic component when joining an electronic component to a board | substrate is made low, an electronic component can be favorably joined to a board | substrate.
本発明による電子部品の接合方法の実施の形態では、銀粒子を含む銀ペーストを基板１０上に塗布して加熱することにより、基板１０上に予備乾燥膜を形成し、この予備乾燥膜を予備加圧して予備乾燥膜の表面を平坦化し、この平坦化した予備乾燥膜の表面にＳｉデバイスなどの電子部品１４を配置した後、電子部品１４に圧力を加えながら加熱することにより、銀接合層１２を介して電子部品１４を基板１０に接合する。このように予備乾燥膜を予備加圧して予備乾燥膜の表面を平坦化することにより、予備乾燥膜の表面に電子部品１４を配置して電子部品１４に加える圧力が低くても、電子部品１４を基板１０に良好に接合することができる。
In the embodiment of the electronic component bonding method according to the present invention, a silver paste containing silver particles is applied onto the
予備乾燥膜の形成の際の加熱温度は、６０〜２００℃であるのが好ましく、８０〜１５０℃であるのがさらに好ましい。また、予備乾燥膜の形成の際の加熱時間は、膜の面積や厚さによって変わるが、予備乾燥膜を形成することができる時間であればよい。 The heating temperature for forming the pre-dried film is preferably 60 to 200 ° C, and more preferably 80 to 150 ° C. In addition, the heating time for forming the pre-dried film varies depending on the area and thickness of the film, but may be any time as long as the pre-dried film can be formed.
予備加圧の際の圧力は１ＭＰａ以上であるのが好ましく、２ＭＰａ以上であるのがさらに好ましい。この予備加圧により予備乾燥膜の表面を平坦化して、予備乾燥膜の表面の表面粗さＲａが２μｍ以下になるのが好ましく、１μｍ以下になるのがさらに好ましい。 The pressure during pre-pressurization is preferably 1 MPa or more, and more preferably 2 MPa or more. The surface of the pre-dried film is flattened by this pre-pressurization, and the surface roughness Ra of the surface of the pre-dried film is preferably 2 μm or less, more preferably 1 μm or less.
電子部品１４を基板１０に接合する際に電子部品１４に加える圧力は、予備加圧の際の圧力以下であるのが好ましく、２ＭＰａ以下であるのが好ましい。
The pressure applied to the
電子部品１４の厚さは、５００μｍ以下であるのが好ましく、５０μｍ以下であるのがさらに好ましい。
The thickness of the
銀ペーストは、銀粒子が分散媒に分散した接合材であるのが好ましい。また、銀粒子は、平均一次粒子径１〜２００ｎｍの銀微粒子であるのが好ましく、平均一次粒子径１〜１００ｎｍの銀微粒子であるのがさらに好ましい。 The silver paste is preferably a bonding material in which silver particles are dispersed in a dispersion medium. The silver particles are preferably silver fine particles having an average primary particle diameter of 1 to 200 nm, and more preferably silver fine particles having an average primary particle diameter of 1 to 100 nm.
なお、本明細書中において、「表面粗さＲａ」とは、ＪＩＳ Ｂ０６０１（２００１年）に基づいて算出した算術平均粗さＲａをいう。また、「銀粒子の平均一次粒子径」とは、透過型電子顕微鏡写真（ＴＥＭ像）による銀粒子の一次粒子径の平均値をいう。 In this specification, “surface roughness Ra” refers to the arithmetic average roughness Ra calculated based on JIS B0601 (2001). Further, the “average primary particle diameter of silver particles” refers to the average value of primary particle diameters of silver particles according to a transmission electron micrograph (TEM image).
以下、本発明による電子部品の接合方法の実施例について詳細に説明する。 Embodiments of a method for joining electronic components according to the present invention will be described in detail below.
［実施例１］
まず、９０．５質量％のソルビン酸と８．５５質量％のオクタンジオールと０．９５質量％のブトキシエトキシ酢酸とからなる分散媒に平均一次粒子径１００ｎｍの銀微粒子が分散した銀ペーストと、３０ｍｍ×３０ｍｍ×１ｍｍの大きさの銅板に銀めっきを施した基板を用意し、この基板の一方の面の１３ｍｍ×１３ｍｍの略矩形の領域に厚さ５０μｍになるように銀ペーストを塗布した。
[Example 1]
First, a silver paste in which silver fine particles having an average primary particle diameter of 100 nm are dispersed in a dispersion medium composed of 90.5% by mass of sorbic acid, 8.55% by mass of octanediol, and 0.95% by mass of butoxyethoxyacetic acid, A substrate obtained by applying silver plating to a copper plate having a size of 30 mm × 30 mm × 1 mm was prepared, and a silver paste was applied to a substantially rectangular region of 13 mm × 13 mm on one side of the substrate so as to have a thickness of 50 μm.
次に、この銀ペーストを塗布した基板を大気中においてホットプレートにより１００℃で１０分間加熱して、基板上に予備乾燥膜を形成した。この予備乾燥膜の表面粗さとして、レーザー顕微鏡（株式会社キーエンス製のＶＫ−９７１０）による測定結果から、ＪＩＳ Ｂ０６０１に基づいて表面粗さを表すパラメータである算出平均粗さＲａを測定したところ、２．１１μｍであった。 Next, the substrate coated with this silver paste was heated in the atmosphere at 100 ° C. for 10 minutes with a hot plate to form a pre-dried film on the substrate. As the surface roughness of this pre-dried film, from the measurement results with a laser microscope (VK-9710 manufactured by Keyence Corporation), the calculated average roughness Ra, which is a parameter representing the surface roughness based on JIS B0601, was measured. 2.11 μm.
次に、基板上の予備乾燥膜に２ＭＰａの荷重をかけて予備加圧を行うことにより、予備乾燥膜の表面を平坦化した。この平坦化後の予備乾燥膜の表面粗さとして、上記と同様の方法により算出平均粗さＲａを測定したところ、０．９０μｍであった。 Next, the surface of the pre-dried film was flattened by pre-pressurizing the pre-dried film on the substrate by applying a load of 2 MPa. As the surface roughness of the pre-dried film after flattening, the calculated average roughness Ra was measured by the same method as described above, and was 0.90 μm.
次に、平坦化した予備乾燥膜の表面に、１２．５ｍｍ×１２．５ｍｍ×３００μｍの大きさの（Ａｇめっきを施した）Ｓｉデバイス（Ｓｉチップ）を配置し、予備乾燥膜上のＳｉデバイスに０．５ＭＰａの荷重をかけて本加圧を行いながら、大気中においてボンダーにより２５０℃で５分間加熱することにより、銀ペースト中の銀を焼結させて銀接合層を形成し、この銀接合層によってＳｉデバイスを基板に接合した。 Next, an Si device (Si chip) having a size of 12.5 mm × 12.5 mm × 300 μm is disposed on the surface of the flattened pre-dried film, and the Si device on the pre-dried film is arranged. A silver bonding layer is formed by sintering silver in the silver paste by heating at 250 ° C. for 5 minutes with a bonder in the atmosphere while applying a main pressure of 0.5 MPa to the silver paste. The Si device was bonded to the substrate by the bonding layer.
このようにして得られた接合体をペンチで曲げてＳｉデバイスを破壊したところ、ほぼ全面にＳｉデバイスが残るほど接合（接合面積が約１００％）しており、Ｓｉデバイスの表面に反りはなかった。 When the Si device was destroyed by bending the joined body thus obtained with pliers, the Si device was joined so that the Si device remained almost entirely (joint area was about 100%), and the surface of the Si device was not warped. It was.
［実施例２］
本加圧の荷重を２ＭＰａとした以外は、実施例１と同様の方法により、銀接合層によってＳｉデバイスを基板に接合した。なお、実施例１と同様の方法により、基板上の予備乾燥膜および平坦化後の予備乾燥膜の算出平均粗さＲａを測定したところ、それぞれ２．１３μｍおよび０．９１μｍであった。
[Example 2]
The Si device was bonded to the substrate by the silver bonding layer in the same manner as in Example 1 except that the load for this pressurization was 2 MPa. The calculated average roughness Ra of the pre-dried film on the substrate and the pre-dried film after flattening was measured by the same method as in Example 1, and found to be 2.13 μm and 0.91 μm, respectively.
このようにして得られた接合体をペンチで曲げてＳｉデバイスを破壊したところ、ほぼ全面にＳｉデバイスが残るほど接合（接合面積が約１００％）しており、Ｓｉデバイスの表面に反りはなかった。 When the Si device was destroyed by bending the joined body thus obtained with pliers, the Si device was joined so that the Si device remained almost entirely (joint area was about 100%), and the surface of the Si device was not warped. It was.
［比較例１］
予備加圧を行わなかった以外は、実施例１と同様の方法により、銀接合層によってＳｉデバイスを基板に接合した。なお、実施例１と同様の方法により、基板上の予備乾燥膜の算出平均粗さＲａを測定したところ、２．１１μｍであった。
[Comparative Example 1]
The Si device was bonded to the substrate by the silver bonding layer in the same manner as in Example 1 except that the pre-pressurization was not performed. The calculated average roughness Ra of the pre-dried film on the substrate was measured by the same method as in Example 1. As a result, it was 2.11 μm.
このようにして得られた接合体をペンチで曲げてＳｉデバイスを破壊したところ、Ｓｉデバイスが残っていた面積（接合面積）が約４６％であり、Ｓｉデバイスの表面に反りはなかった。 When the Si device was broken by bending the joined body thus obtained with pliers, the area where the Si device remained (joint area) was about 46%, and the surface of the Si device was not warped.
［比較例２］
予備加圧の荷重を０．５ＭＰａとした以外は、実施例１と同様の方法により、銀接合層によってＳｉデバイスを基板に接合した。なお、実施例１と同様の方法により、基板上の予備乾燥膜および平坦化後の予備乾燥膜の算出平均粗さＲａを測定したところ、それぞれ２．１２μｍおよび１．６０μｍであった。
[Comparative Example 2]
The Si device was bonded to the substrate by the silver bonding layer in the same manner as in Example 1 except that the pre-pressurization load was 0.5 MPa. The calculated average roughness Ra of the pre-dried film on the substrate and the pre-dried film after flattening was measured by the same method as in Example 1, and was 2.12 μm and 1.60 μm, respectively.
このようにして得られた接合体をペンチで曲げてＳｉデバイスを破壊したところ、Ｓｉデバイスが残っていた面積（接合面積）が約２５％であり、Ｓｉデバイスの表面に反りはなかった。 When the Si device was destroyed by bending the joined body thus obtained with pliers, the area where the Si device remained (joint area) was about 25%, and the surface of the Si device was not warped.
［比較例３］
予備加圧を行わず、本加圧の荷重を２ＭＰａとした以外は、実施例１と同様の方法により、銀接合層によってＳｉデバイスを基板に接合した。なお、実施例１と同様の方法により、基板上の予備乾燥膜の算出平均粗さＲａを測定したところ、２．１２μｍであった。
[Comparative Example 3]
The Si device was bonded to the substrate by the silver bonding layer in the same manner as in Example 1 except that the pre-pressurization was not performed and the main pressure load was set to 2 MPa. The calculated average roughness Ra of the pre-dried film on the substrate was measured by the same method as in Example 1. As a result, it was 2.12 μm.
このようにして得られた接合体をペンチで曲げてＳｉデバイスを破壊したところ、ほぼ全面にＳｉデバイスが残るほど接合（接合面積が約１００％）していたが、Ｓｉデバイスの表面に反りがあった。 When the Si device was destroyed by bending the bonded body thus obtained with pliers, the Si device was bonded so that the Si device remained almost on the entire surface (the bonding area was about 100%), but the surface of the Si device was warped. there were.
［比較例４］
９０．５質量％のソルビン酸と８．５５質量％のオクタンジオールと０．９５質量％のブトキシエトキシ酢酸とからなる分散媒に平均一次粒子径８００ｎｍの銀微粒子が分散した銀ペーストを使用した以外は、実施例１と同様の方法により、銀接合層によってＳｉデバイスを基板に接合した。なお、実施例１と同様の方法により、基板上の予備乾燥膜および平坦化後の予備乾燥膜の算出平均粗さＲａを測定したところ、それぞれ２．１７μｍおよび０．４３μｍであった。
[Comparative Example 4]
Other than using a silver paste in which silver fine particles having an average primary particle size of 800 nm are dispersed in a dispersion medium composed of 90.5% by mass of sorbic acid, 8.55% by mass of octanediol, and 0.95% by mass of butoxyethoxyacetic acid. In the same manner as in Example 1, the Si device was bonded to the substrate by the silver bonding layer. The calculated average roughness Ra of the pre-dried film on the substrate and the pre-dried film after planarization was measured by the same method as in Example 1, and were 2.17 μm and 0.43 μm, respectively.
このようにして得られた接合体をペンチで曲げてＳｉデバイスを破壊したところ、Ｓｉデバイスは殆ど残っておらず（接合面積が約０％）、Ｓｉデバイスの表面に反りはなかった。 When the Si device was destroyed by bending the joined body thus obtained with pliers, the Si device hardly remained (joining area was about 0%), and the surface of the Si device was not warped.
［比較例５］
本加圧の荷重を２ＭＰａとした以外は、比較例４と同様の方法により、銀接合層によってＳｉデバイスを基板に接合した。なお、実施例１と同様の方法により、基板上の予備乾燥膜および平坦化後の予備乾燥膜の算出平均粗さＲａを測定したところ、それぞれ２．１５μｍおよび０．４２μｍであった。
[Comparative Example 5]
The Si device was bonded to the substrate by the silver bonding layer in the same manner as in Comparative Example 4 except that the load for this pressurization was 2 MPa. The calculated average roughness Ra of the pre-dried film on the substrate and the pre-dried film after flattening was measured by the same method as in Example 1, and they were 2.15 μm and 0.42 μm, respectively.
このようにして得られた接合体をペンチで曲げてＳｉデバイスを破壊したところ、Ｓｉデバイスは殆ど残っておらず（接合面積が約０％）、Ｓｉデバイスの表面に反りはなかった。 When the Si device was destroyed by bending the joined body thus obtained with pliers, the Si device hardly remained (joining area was about 0%), and the surface of the Si device was not warped.
１０ 基板
１２ 銀接合層
１４ 電子部品
10
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