JP6076796B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP6076796B2 JP6076796B2 JP2013067846A JP2013067846A JP6076796B2 JP 6076796 B2 JP6076796 B2 JP 6076796B2 JP 2013067846 A JP2013067846 A JP 2013067846A JP 2013067846 A JP2013067846 A JP 2013067846A JP 6076796 B2 JP6076796 B2 JP 6076796B2
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- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 57
- 239000011347 resin Substances 0.000 claims description 45
- 229920005989 resin Polymers 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000005469 synchrotron radiation Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
Description
明るい放射光を得るために放熱特性が良く、形状的には薄型化されていること、さらに発光色度を良くするために蛍光樹脂を用いたLED発光装置に特有のイエローリングを解消することである。
以下図面により、本発明の第1実施形態におけるLED発光装置の構成を説明する。
図1から図6は第1実施形態におけるLED発光装置10の構成を示すものであり、図1はLED発光装置の平面図を示し、図2は図1に示すLED発光装置のA−A断面図、図3は図1に示すLED発光装置のB−B断面図である。図1及び図2、図3においてLED発光装置10の構成は後述する如く中心に開口部2aを有する回路基板2には、開口部2aの周辺に2個の接続電極3a,3bと、回路基板2の対角位置に2個の端子電極に3c、3dを備えると共に接続電極3a,3bと端子電極に3c、3dとは電気的の接続されている。
次に図7〜図9により、本発明の第2実施形態におけるLED発光装置について説明する。図7、図8は本発明の第2実施形態におけるLED発光装置20の平面図及びA−A断面図であり、基本的構成は図1、図2に示す第1実施形態におけるLED発光装置10と同じであり、同一部材には同一番号を付し、重複する説明を省略する。
図7、図8に示す第2実施形態におけるLED発光装置20が、図1、図2に示す第1実施形態におけるLED発光装置10と異なるところは、実装基板25の段差部が25a〜25eの5段階になっており、実装部を構成する段差部5a〜5dの接続部分が傾斜面25kとなっていることである。そして段差部25eが回路基板2との積層部を構成している。
次に図10により、本発明の第3実施形態におけるLED発光装置について説明する。図10は本発明の第3実施形態におけるLED発光装置30の断面図であり、基本的構成は図1、図2に示す第1実施形態のLED発光装置10と同じであり、同一部材には同一番号を付し、重複する説明を省略する。またLED発光装置30の平面図は図1に示すLED発光装置10と同一なので図示も省略する。
次に図11により、本発明の第4実施形態におけるLED発光装置について説明する。図11は本発明の第4実施形態におけるLED発光装置40の断面図であり、基本的構成は図1、図2に示す第1実施形態のLED発光装置10と同じであり、同一部材には同一番号を付し、重複する説明を省略する。またLED発光装置40の平面図も図1に示すLED発光装置10と同一なので図示も省略する。
なお、本実施形態においては、LED同士の接続にワイヤーを用いる構成を示したが、これに限定されるものではなく、実装基板としてセラミックのような絶縁基板を用いる場合や、金属基板の上面に絶縁層を設けることによって、実装基板上に電極パターン形成すれば、LED同士の接続をフリップチップ実装とすることができる。
2, 回路基板
2a 開口部
3a,3b 接続電極
3c,3d 端子電極
5、25,35,45 実装基板
5a〜5e 、25a〜25e 段差部
6, ワイヤー
7、105,205 蛍光樹脂
10,20,30,40、100,200 LED発光装置
25k 傾斜面
45A 樹脂基板
45B 金属層
PS 垂直発光
Pk 傾斜発光
Ph 反射発光
Claims (7)
- 複数の段差部を有する実装基板と、前記実装基板の各段差部に実装された複数の半導体発光素子と、各半導体発光素子を電気的に接続する接続手段と、前記実装基板の各段差部に実装された複数の半導体発光素子を封止する蛍光樹脂とを有し、前記実装基板の段差部は同心形状に形成され、内側の段差に対して周辺の段差が順次低くなっており、
前記半導体発光素子を封止する蛍光樹脂の形状が、前記実装基板の段差形状に合わせた段差形状を有することを特徴とする半導体発光装置。 - 前記実装基板の各段差部の接続部分が傾斜していることを特徴とする請求項1に記載の半導体発光装置。
- 前記実装基板の外周部には接続電極を有する回路基板を有し、前記各段差部に実装された半導体発光素子の間及び前記回路基板上の接続電極との間をワイヤーボンディングによって接続したことを特徴とする請求項1または2に記載の半導体発光装置。
- 前記回路基板は中央に開口部を有し、前記開口部の周辺に前記接続電極を設け、前記回路基板の開口部に前記実装基板が配置されていることを特徴とする請求項1〜3の何れか一項に記載の半導体発光装置。
- 前記実装基板が金属基板であることを特徴とする請求項1〜4の何れか一項に記載の半導体発光装置。
- 前記実装基板がセラミック基板であることを特徴とする請求項1〜4の何れか一項に記載の半導体発光装置。
- 前記実装基板が樹脂成型体の表面に金属層を形成したことを特徴とする請求項1〜4の何れか一項に記載の半導体発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013067846A JP6076796B2 (ja) | 2013-03-28 | 2013-03-28 | 半導体発光装置 |
CN201420149543.5U CN203839374U (zh) | 2013-03-28 | 2014-03-28 | 发光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2013067846A JP6076796B2 (ja) | 2013-03-28 | 2013-03-28 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
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JP2014192407A JP2014192407A (ja) | 2014-10-06 |
JP6076796B2 true JP6076796B2 (ja) | 2017-02-08 |
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JP2013067846A Active JP6076796B2 (ja) | 2013-03-28 | 2013-03-28 | 半導体発光装置 |
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JP (1) | JP6076796B2 (ja) |
CN (1) | CN203839374U (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6790602B2 (ja) * | 2015-10-30 | 2020-11-25 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2017103381A (ja) * | 2015-12-03 | 2017-06-08 | シチズン電子株式会社 | 発光装置 |
JP6643910B2 (ja) * | 2016-02-08 | 2020-02-12 | シチズン電子株式会社 | 発光装置 |
US10862276B2 (en) * | 2017-08-31 | 2020-12-08 | Nichia Corporation | Method of manufacturing light emitting device and light emitting device |
WO2021005965A1 (ja) * | 2019-07-09 | 2021-01-14 | 株式会社村田製作所 | 回路基板 |
WO2021182413A1 (ja) * | 2020-03-10 | 2021-09-16 | シチズン電子株式会社 | 発光装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4443188B2 (ja) * | 2003-10-30 | 2010-03-31 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP2005158958A (ja) * | 2003-11-25 | 2005-06-16 | Matsushita Electric Works Ltd | 発光装置 |
JP4945112B2 (ja) * | 2005-10-28 | 2012-06-06 | スタンレー電気株式会社 | Led照明装置 |
JP2007150233A (ja) * | 2005-11-02 | 2007-06-14 | Trion:Kk | 色温度可変発光デバイス |
JP2009099715A (ja) * | 2007-10-16 | 2009-05-07 | Fujikura Ltd | 発光装置 |
JP2009181704A (ja) * | 2008-01-29 | 2009-08-13 | Toyoda Gosei Co Ltd | バックライト装置 |
JP2012079777A (ja) * | 2010-09-30 | 2012-04-19 | Hitachi Chem Co Ltd | 発光素子搭載用基板及び発光素子パッケージ |
JP5697091B2 (ja) * | 2011-04-01 | 2015-04-08 | シチズン電子株式会社 | 半導体発光装置 |
CN102543987A (zh) * | 2012-02-07 | 2012-07-04 | 达亮电子(苏州)有限公司 | 固态发光组件 |
-
2013
- 2013-03-28 JP JP2013067846A patent/JP6076796B2/ja active Active
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2014
- 2014-03-28 CN CN201420149543.5U patent/CN203839374U/zh not_active Expired - Fee Related
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JP2014192407A (ja) | 2014-10-06 |
CN203839374U (zh) | 2014-09-17 |
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