JP6063040B2 - 歯科用途のためのCeO2安定化ZrO2セラミック - Google Patents
歯科用途のためのCeO2安定化ZrO2セラミック Download PDFInfo
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- JP6063040B2 JP6063040B2 JP2015517765A JP2015517765A JP6063040B2 JP 6063040 B2 JP6063040 B2 JP 6063040B2 JP 2015517765 A JP2015517765 A JP 2015517765A JP 2015517765 A JP2015517765 A JP 2015517765A JP 6063040 B2 JP6063040 B2 JP 6063040B2
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- 239000000919 ceramic Substances 0.000 title claims description 177
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 title description 36
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 title 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 title 1
- 238000000034 method Methods 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 28
- 238000005245 sintering Methods 0.000 claims description 27
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 23
- 239000011148 porous material Substances 0.000 claims description 23
- 238000000280 densification Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000002490 spark plasma sintering Methods 0.000 claims description 19
- 239000007858 starting material Substances 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052760 oxygen Inorganic materials 0.000 claims description 6
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
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- 239000008188 pellet Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
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- 239000004053 dental implant Substances 0.000 description 2
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- 230000001590 oxidative effect Effects 0.000 description 2
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- 239000002994 raw material Substances 0.000 description 2
- 229910002483 Cu Ka Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 238000003991 Rietveld refinement Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 238000001354 calcination Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
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- 229910002078 fully stabilized zirconia Inorganic materials 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 238000009862 microstructural analysis Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
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- 230000006641 stabilisation Effects 0.000 description 1
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- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Description
Xuら(Journal of the European Ceramic Society 25(2005)3437−3442)は、熱間加圧によって調製されたセラミックのミクロ構造と比較して、放電プラズマ焼結(SPS)によって調製されたCeO2ドープZrO2セラミックのミクロ構造に取り組んでいる。熱間加圧試料は正方晶ZrO2相を全く示さないことが報告され、一方、SPSによって焼結された試料は、単斜晶および正方晶ZrO2相を2:1の体積比で含有することが見出され、従って、特に歯科用途において、所望される応力誘起相変態の観点から、不満足な低い正方晶相含有量となった。前記方法の適用を制限するもう1つの課題は、Ce−TZPの還元の受けやすさである。熱間加圧法およびSPS法において、グラファイトダイに原料粉末が充填されるので、強い還元性雰囲気が存在し、Ce4+からCe3+への還元が、付随して起こる褐色への変色によって容易に観察でき、これは付加的な重大欠点である。
Cruzら(J.Am.Ceram.Soc.(2012)、第95巻、第3号、901−906,DOI:10.111/j.1551−2916.2011.04978.x)は、5分間の保持時間有りかまたは保持時間無しの1200℃でのSPSによる、10mol%CeO2ドープZrO2セラミックの調製を記載している。保持時間無しで調製された試料の相対密度は97.9%にすぎないと記載される一方、5分間焼結された試料はより高い密度であることが報告されているが、相当量の単斜晶相およびパイロクロアI相、さらに所望の正方晶相の存在を特徴とする。
この目的は、請求項11〜16に記載の高密度化CeO2安定化ZrO2セラミック、および請求項17または18に記載のその調製方法によって解決される。本発明は、さらに、請求項1〜7に記載の多孔質予備高密度化CeO2安定化ZrO2セラミックの使用、請求項8および9に記載の多孔質予備高密度化CeO 2 安定化ZrO 2 セラミックの調製方法、および請求項10に記載の多孔質予備高密度化CeO 2 安定化ZrO 2 セラミックに関する。本発明は、さらに、請求項19に記載の高密度化CeO2−ZrO2セラミックの使用に関する。
例えば、以下の項目が提供される。
(項目1)
ジルコニアの理論密度に対して50.0〜95.0%の密度、および5〜50%の開放気孔率を有する多孔質CeO2安定化ZrO2セラミック。
(項目2)
60.0〜90.0%、好ましくは70.0〜85.0%の密度を有する、項目1に記載の多孔質セラミック。
(項目3)
10〜30%、好ましくは14〜25%、より好ましくは15〜23%の開放気孔率を有する、項目1または2に記載の多孔質セラミック。
(項目4)
5%未満、好ましくは2%未満、より好ましくは1%未満の閉鎖気孔率を有する、項目1〜3のいずれか1つに記載の多孔質セラミック。
(項目5)
前記セラミックの気孔が、10〜500nm、好ましくは25〜300nm、より好ましくは50〜200nmの平均気孔径を有する、項目1〜4のいずれか1つに記載の多孔質セラミック。
(項目6)
前記セラミックの粒子が、10〜500nm、好ましくは25〜300nm、より好ましくは50〜200nmの平均粒度を有する、項目1〜5のいずれか1つに記載の多孔質セラミック。
(項目7)
正方晶ZrO2を、前記セラミックの結晶の全体積に基づいて50〜100vol%、好ましくは70〜100vol%、より好ましくは90〜100vol%の量で含む、項目1〜6のいずれか1つに記載の多孔質セラミック。
(項目8)
(a) CeO2含有ZrO2出発原料を予備高密度化して、前記多孔質セラミックを得る工程を含む、項目1〜7のいずれか1つに記載の多孔質CeO2安定化ZrO2セラミックの調製方法。
(項目9)
項目8に記載の方法であって、工程(a)における予備高密度化が放電プラズマ焼結によって行なわれ、該焼結が好ましくは:
前記CeO2含有ZrO2出発原料を約950〜1350℃、好ましくは約1050〜1250℃の焼結温度に加熱する工程、および/または前記CeO2含有ZrO2出発原料を1〜400℃/分、好ましくは5〜100℃/分、より好ましくは50〜100℃/分の加熱速度で加熱する工程を含む方法。
(項目10)
(b) 工程(a)で得た多孔質セラミックを再酸化する工程を含む、項目8または9のいずれか1項に記載の方法であって、下記の工程を含む方法。
(項目11)
ジルコニアの理論密度に対して97.0〜100.0%の密度を有する高密度化CeO2安定化ZrO2セラミックであって、該セラミックの粒子が50〜1000nmの平均粒度を有する高密度化CeO2安定化ZrO2セラミック。
(項目12)
98.0〜100.0%、好ましくは99.5〜100.0%、より好ましくは約100.0%の密度を有する、項目11に記載の高密度化セラミック。
(項目13)
前記セラミックの粒子が、100〜800nm、好ましくは400〜700nmの平均粒度を有する、項目11または12に記載の高密度化セラミック。
(項目14)
正方晶ZrO2を、前記高密度化セラミックの結晶の全体積に基づいて90〜100vol%、好ましくは95〜100vol%、より好ましくは約100vol%の量で含む、項目11〜13のいずれか1つに記載の高密度化セラミック。
(項目15)
前記セラミックの気孔が、150nm未満、好ましくは100nm未満、より好ましくは80nm未満または20nm未満、最も好ましくは約10nmの平均気孔径を有する、項目11〜14のいずれか1つに記載の高密度化セラミック。
(項目16)
1%未満の開放気孔率および/または1%未満の閉鎖気孔率を有する、項目11〜15のいずれか1つに記載の高密度化セラミック。
(項目17)
(a’) 項目1〜7のいずれか1つに記載の多孔質CeO2安定化ZrO2セラミックを提供する工程であって、該提供する工程は、好ましくは、項目8〜10のいずれか1つに記載の多孔質CeO2安定化ZrO2セラミックの調製方法を含む工程;
(c) 任意に、工程(a’)で提供された多孔質セラミックを付形する工程;および
(d) 工程(a)で提供された、または工程(c)で得られた、該多孔質セラミックを高密度化して、高密度化CeO2安定化ZrO2セラミックを得る工程を含む、
項目11〜16のいずれか1つに記載の高密度化CeO2安定化ZrO2セラミックの調製方法。
(項目18)
工程(d)における高密度化が、酸素含有雰囲気中で、好ましくは空気中での焼結によって行なわれる、項目17に記載の方法。
(項目19)
項目1〜7のいずれか1つに記載の多孔質CeO2安定化ZrO2セラミック、または項目11〜16のいずれか1つに記載の高密度化CeO2安定化ZrO2セラミックの、歯科修復物、好ましくは歯科用フレームワーク、歯科用アバットメントおよび歯科用インプラントの調製のための使用。
(a) CeO2含有ZrO2出発原料を予備高密度化して、多孔質セラミックを得る工程。
(b) 工程(a)で得た多孔質セラミックを再酸化する工程。
(a´) 本発明の第一実施態様によるか、または多孔質CeO2安定化ZrO2セラミックの前記調製方法によって得られる、多孔質CeO2安定化ZrO2セラミックを提供する工程;
(c) 任意に、工程(a´)で提供された多孔質セラミックを付形する工程;および
(d) 工程(a´)で提供された、または工程(c)で得られた、多孔質セラミックを高密度化して、高密度化CeO2安定化ZrO2セラミックを得る工程。
(a) CeO2含有ZrO2出発原料を予備高密度化して、ジルコニアの理論密度に対して50〜95%、好ましくは60〜85%の密度、および5〜50%、好ましくは10〜30%、より好ましくは14〜25%、最も好ましくは15〜23%の開放気孔率を有する予備高密度化多孔質CeO2安定化ZrO2セラミック素地を得る工程;
(b) 任意に、工程(a)で得た予備高密度化多孔質セラミック素地を再酸化する工程;
(c) 任意に、工程(a)または(b)で得た予備高密度化多孔質セラミック素地を、好ましくは機械加工によって、付形する工程;および
(d) 工程(a)、(b)または(c)で得た予備高密度化多孔質セラミック素地を、好ましくは酸素含有雰囲気中で焼結することによって、高密度化CeO2安定化ZrO2セラミックを得る工程。
照明エリア /
測定開口: 7mm×5mm
測定タイプ: レミッション/リフレクション
測定数: 1回測定
測定範囲: 400〜700nm
背景色: L*=93.11
a*=−0.64
b*=4.22
直径: φ15〜20mm
厚さ: 2mm±0.025mm
面平行: ±0.05mm
表面粗さ: 約18μm
i) 原料
Daiichi,Japanによって製造されている、約88mol%の酸化ジルコニウムおよび約12mol%の酸化セリウムを含む非噴霧乾燥サブマイクロメータ粉末を、出発原料として使用した(Daiichi CEZ−12−1)。原料の正確な組成を表1に示す。
第一工程において、12Ce−TZP粉末を放電プラズマ焼結(SPS)法によって予備高密度化した。20mmの内径を有するグラファイト円筒形ダイを使用した。グラファイト箔をダイの中に転がし滑らせて、その内面を覆った。次に、グラファイト箔の円形片で覆われたプランジャを、ダイに導入した。次に、6gの12Ce−TZP粉末を、スパチュラでダイに導入し、最後に、グラファイト箔で覆われた第二プランジャを粉末の上方に配置した。このアセンブリを、SPS装置(FCT GmbH,GermanyのHP D25)内の押込み電極間に配置した。真空室を閉め、パラメータを設定した。選択雰囲気は10−2バールの真空であり、パルス直流は下記のシーケンスに設定した:10ms時間オン、次に5ms時間オフ。焼結は、50℃/分の加熱速度で行なった。76MPaの圧力を加熱の前に適用し、焼結の間維持した。到達焼結温度は、高温計で測定して1150℃であった。この温度に達したらすぐに、温度を13分間で室温に下げた。焼結後、試料をダイから取り出し、裂けたグラファイト箔破片を除去した。
第二工程において、放電プラズマ焼結試料を、試料と同じ化学組成を有するセラミック粉末(12CeO2−ZrO2)床上において、坩堝に入れた。次に、試料を入れた坩堝を、空気循環を有する炉に入れ、5℃/分で1300℃に加熱し、この温度で2時間保持した。最後に、加熱を停止し、炉を室温に冷却した。
実施例1からの粉末の変形物として、市販粉末DaiichiCEZ−12−2をDaiichi CEZ−12−1の代わりにこの比較例に使用した。Daiichi CEZ−12−2の組成は、Daiichi CEZ−12−1の組成と同様であったが、該粉末は、その加圧挙動を強化する4,5wt%の有機分子を付加的に含有していた。この粉末を、50MPaの圧力で一軸ダイ加圧して円板にした。次に、280MPaの圧力で冷間静水圧加圧を行なった。焼結は、以下の方法によって行なった:1℃/分で600℃に加熱し、2時間保持し、5℃/分で1430℃に加熱し、2時間滞留し、最後に8℃/分で室温に冷却する。
Daiichi CEZ−12−2粉末の加圧ペレットを、200MPaの圧力での一軸ダイ加圧によって調製した。脱バインダを下記の手順によって行なった:1℃/分で600℃に加熱し、2時間滞留し、次に5℃/分で冷却する。次に、脱バインダしたペレットを、実施例1に記載したSPSによる予備高密度化工程およびそれに続く高密度化工程を使用して処理して、高密度化CeO2安定化ZrO2セラミック試料にした。
SPS処理工程において1150℃のピーク温度および20℃/分の加熱速度を使用した以外は、実施例2に記載したように高密度化CeO2安定化ZrO2セラミック試料を調製した。
1.2mmの厚さおよび13mmの直径を有する一連の10個の高密度化CeO2安定化ZrO2セラミック試料を、実施例2に記載したように調製した。焼結後、二軸試験試料をISO6872−2008に記載のように調製した。
SPS処理において1250℃のピーク温度および20℃/分の加熱速度を使用した以外は、実施例1に記載したように高密度化CeO2安定化ZrO2セラミック試料を調製した。
予備焼結ブロックのCAD−CAM機械加工(Cerec3ミリングユニット、Sirona,Austria)によって、一連の10個のDaiichi CEZ−12−2ペレットを調製した。該予備焼結ブロックは、250MPaでの一軸加圧および1000℃で2時間の予備焼結により付形することによって得た。予備焼結およびCAD−CAM機械加工の後に、円板を1400℃で2時間焼結し、最後に、二軸曲げ試験用にISO6872−2008に記載のように調製した。
Claims (19)
- 歯科修復物の調製のための、6.23g/cm3に対して50.0〜95.0%の密度、および5〜50%の開放気孔率を有する多孔質CeO2安定化ZrO2セラミックの使用。
- 前記多孔質セラミックが60.0〜90.0%の密度を有する、請求項1に記載の使用。
- 前記多孔質セラミックが10〜30%の開放気孔率を有する、請求項1または2に記載の使用。
- 前記多孔質セラミックが5%未満の閉鎖気孔率を有する、請求項1〜3のいずれか1つに記載の使用。
- 前記セラミックの気孔が、25〜300nmの平均気孔径を有する、請求項1〜4のいずれか1つに記載の使用。
- 前記セラミックの粒子が、10〜500nmの平均粒度を有する、請求項1〜5のいずれか1つに記載の使用。
- 前記多孔質セラミックが、正方晶ZrO2を、前記セラミックの結晶の全体積に基づいて70〜100vol%の量で含む、請求項1〜6のいずれか1つに記載の使用。
- 6.23g/cm 3 に対して50.0〜95.0%の密度、および5〜50%の開放気孔率を有する多孔質CeO2安定化ZrO2セラミックの調製方法であって、
(a)CeO2含有ZrO2出発原料を予備高密度化して、該多孔質セラミックを得る工程を含み、
ここで、該出発原料が6〜12mol%のCeO2を含み、そして工程(a)における予備高密度化が放電プラズマ焼結によって行なわれ、該焼結が、該CeO2含有ZrO2出発原料を950〜1350℃の焼結温度に加熱する工程、または該CeO2含有ZrO2出発原料を5〜100℃/分の加熱速度で加熱する工程を含む、方法。 - (b)工程(a)で得た多孔質セラミックを再酸化する工程を含む、請求項8に記載の方法。
- 6.23g/cm3に対して50.0〜95.0%の密度、および5〜50%の開放気孔率を有する多孔質CeO2安定化ZrO2セラミックであって、該セラミックの気孔が、50〜300nmの平均気孔径を有する、多孔質CeO2安定化ZrO2セラミック。
- 6.23g/cm3に対して97.0〜100.0%の密度を有する高密度化CeO2安定化ZrO2セラミックであって、該セラミックの粒子が50〜1000nmの平均粒度を有し、該セラミックの気孔が、150nm未満の平均気孔径を有する、高密度化CeO2安定化ZrO2セラミック。
- 98.0〜100.0%の密度を有する、請求項11に記載の高密度化セラミック。
- 前記セラミックの粒子が、100〜800nmの平均粒度を有する、請求項11または12に記載の高密度化セラミック。
- 正方晶ZrO2を、前記高密度化セラミックの結晶の全体積に基づいて95〜100vol%の量で含む、請求項11〜13のいずれか1つに記載の高密度化セラミック。
- 前記セラミックの気孔が、80nm未満の平均気孔径を有する、請求項11〜14のいずれか1つに記載の高密度化セラミック。
- 1%未満の開放気孔率または1%未満の閉鎖気孔率を有する、請求項11〜15のいずれか1つに記載の高密度化セラミック。
- (a’)6.23g/cm 3 に対して50.0〜95.0%の密度、および5〜50%の開放気孔率を有する多孔質CeO2安定化ZrO2セラミックを提供する工程;
(c)任意に、工程(a’)で提供された多孔質セラミックを付形する工程;および
(d)工程(a’)で提供された、または工程(c)で得られた、該多孔質セラミックを高密度化して、高密度化CeO2安定化ZrO2セラミックを得る工程を含む、
請求項11〜16のいずれか1つに記載の高密度化CeO2安定化ZrO2セラミックの調製方法。 - 工程(d)における高密度化が、酸素含有雰囲気中で行なわれる、請求項17に記載の方法。
- 請求項11〜16のいずれか1つに記載の高密度化CeO2安定化ZrO2セラミックの、歯科修復物の調製のための使用。
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