JP6051069B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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JP6051069B2
JP6051069B2 JP2013027407A JP2013027407A JP6051069B2 JP 6051069 B2 JP6051069 B2 JP 6051069B2 JP 2013027407 A JP2013027407 A JP 2013027407A JP 2013027407 A JP2013027407 A JP 2013027407A JP 6051069 B2 JP6051069 B2 JP 6051069B2
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light emitting
wavelength conversion
semiconductor light
conversion member
emitting device
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JP2014157902A (en
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智鵬 袁
智鵬 袁
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Stanley Electric Co Ltd
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/16Laser light sources
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S45/00Arrangements within vehicle lighting devices specially adapted for vehicle exteriors, for purposes other than emission or distribution of light
    • F21S45/70Prevention of harmful light leakage

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Semiconductor Lasers (AREA)

Description

本発明は半導体発光素子パッケージ及び波長変換部材を含む半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device including a semiconductor light emitting element package and a wavelength conversion member.

電力効率が高くかつ良好な消費電力特性を有する白色光源用の半導体発光装置として、可視光の半導体レーザ素子及び半導体レーザ素子からの光を波長変換する波長変換部材を有し、これらの光の混色により白色光を得るものがある。この場合、波長変換部材は蛍光体及び蛍光体を固着させる結着剤よりなる。   As a semiconductor light emitting device for a white light source that has high power efficiency and good power consumption characteristics, it has a visible light semiconductor laser element and a wavelength conversion member that converts the wavelength of light from the semiconductor laser element, and color mixing of these lights Some obtain white light. In this case, the wavelength conversion member is made of a phosphor and a binder for fixing the phosphor.

近年、上述の半導体発光装置は車載環境等たとえばヘッドライトで用いられ、この結果、振動等の予測不可能な原因により、波長変換部材の脱落あるいは異常変形が発生することがある。このような波長変換部材の脱落あるいは異常変形によって半導体レーザ素子の高出力の光がユーザ等の目に直接入ると、ユーザ等の視力低下等を招く。   In recent years, the above-described semiconductor light-emitting device is used in an in-vehicle environment such as a headlight, and as a result, the wavelength conversion member may be dropped or abnormally deformed due to an unpredictable cause such as vibration. When the high-power light of the semiconductor laser element directly enters the eyes of the user or the like due to such dropping or abnormal deformation of the wavelength conversion member, the visual acuity of the user or the like is reduced.

従来の半導体発光装置においては、半導体レーザ素子の密閉手段に入り込んだ外気を検知する圧力センサを設けることにより密閉手段の異常を検知して半導体レーザ素子の通電を停止している(参照:特許文献1)。   In a conventional semiconductor light emitting device, by providing a pressure sensor that detects the outside air that has entered the sealing means of the semiconductor laser element, an abnormality of the sealing means is detected, and energization of the semiconductor laser element is stopped (see Patent Document). 1).

特開2009−146938号公報JP 2009-146938 A

しかしながら、上述の従来の半導体発光装置においては、密閉手段の異常は検知されるものの、波長変換部材の脱落あるいは異常変形は直接検知されておらず、従って、半導体レーザ素子の高出力の光が半導体発光装置の外部へ照射されるのを防止できず、従って、人の目に直接入ることを防止できないという課題がある。   However, in the above-described conventional semiconductor light emitting device, although the abnormality of the sealing means is detected, the dropping or abnormal deformation of the wavelength conversion member is not directly detected, and therefore the high output light of the semiconductor laser element is not detected by the semiconductor. There is a problem that it is not possible to prevent the light from being emitted to the outside of the light emitting device, and thus it is not possible to prevent direct entry into the human eye.

上述の課題を解決するために、本発明に係る半導体発光装置は、半導体発光素子パッケージと、半導体発光素子パッケージからの光を波長変換する波長変換部材と、半導体発光素子パッケージ及び波長変換部材を固定する固定構造とを具備する半導体発光装置において、波長変換部材を固定部材に押し付けるために弾性部材と、弾性部材と波長変換部材との間に設けられた圧力センサと、圧力センサの出力に基づいて半導体発光素子パッケージへの通電及び通電の停止を行うための制御部とを具備するものである。これにより、波長変換部材が脱落した場合、あるいは予想できない外力等により波長変換部材が異常変形した場合に、圧力センサが波長変換部材の脱落あるいは異常変形を検知する。 In order to solve the above-described problems, a semiconductor light emitting device according to the present invention includes a semiconductor light emitting element package, a wavelength conversion member that converts the wavelength of light from the semiconductor light emitting element package, and the semiconductor light emitting element package and the wavelength conversion member. In the semiconductor light emitting device having the fixing structure to be operated, an elastic member for pressing the wavelength conversion member against the fixing member, a pressure sensor provided between the elastic member and the wavelength conversion member, and an output of the pressure sensor And a controller for energizing the semiconductor light emitting device package and stopping the energization. As a result, when the wavelength conversion member is dropped or when the wavelength conversion member is abnormally deformed due to an unpredictable external force or the like, the pressure sensor detects the loss or abnormal deformation of the wavelength conversion member.

本発明によれば、波長変換部材の脱落あるいは異常変形を検知して半導体発光素子パッケージの通電を停止しているので、半導体発光素子の高出力の光が半導体発光装置の外部へ照射されるのを防ぎ、従って、人の目に直接入ることを防止できる。
According to the present invention, since the energization of the semiconductor light emitting device package is stopped by detecting the dropping or abnormal deformation of the wavelength conversion member, the high output light of the semiconductor light emitting device is irradiated to the outside of the semiconductor light emitting device. Thus preventing direct entry into the human eye.

本発明に係る半導体発光装置を示す断面図である。It is sectional drawing which shows the semiconductor light-emitting device based on this invention. 図1の制御部の通電動作を説明するための制御ルーチンである。It is a control routine for demonstrating the electricity supply operation | movement of the control part of FIG.

図1は本発明に係る半導体発光装置を示す断面図である。   FIG. 1 is a sectional view showing a semiconductor light emitting device according to the present invention.

図1において、CAN型半導体レーザ素子パッケージ1、集光凸レンズ2及び波長変換部材3は放熱性の金属よりなる固定構造4によって固定される。具体的には、CAN型半導体レーザ素子パッケージ1は固定構造4の光源保持部4aによって保持され、集光凸レンズ2は固定構造4のレンズ保持部4bによって保持され、波長変換部材3は固定構造4の波長変換部材保持部4cによって保持されている。この場合、光源保持部4a、レンズ保持部4b及び波長変換部材保持部4cには接着剤(図示せず)が施される。   In FIG. 1, a CAN type semiconductor laser device package 1, a condensing convex lens 2 and a wavelength conversion member 3 are fixed by a fixing structure 4 made of a heat dissipating metal. Specifically, the CAN type semiconductor laser device package 1 is held by the light source holding part 4a of the fixing structure 4, the condensing convex lens 2 is held by the lens holding part 4b of the fixing structure 4, and the wavelength conversion member 3 is fixed by the fixing structure 4. Are held by the wavelength conversion member holding portion 4c. In this case, an adhesive (not shown) is applied to the light source holding part 4a, the lens holding part 4b, and the wavelength conversion member holding part 4c.

CAN型半導体レーザ素子パッケージ1はたとえば波長430〜460nmの青色光L1を出射する。この青色光L1は固定構造4の波長変換部材保持部4cの透過窓4c’を介して波長変換部材3に入射する。波長変換部材3は青色光L1の一部を吸収して異なる波長の光を発生する蛍光体たとえばイットリウム・アルミニウム・ガーネット(YAG)系蛍光体及び蛍光体を結着させる結着材よりなる。従って、波長変換部材3によって変換された光は変換されない青色光L1と混色して白色光L2となる。   The CAN type semiconductor laser device package 1 emits blue light L1 having a wavelength of 430 to 460 nm, for example. The blue light L1 enters the wavelength conversion member 3 through the transmission window 4c 'of the wavelength conversion member holding portion 4c of the fixed structure 4. The wavelength converting member 3 is made of a phosphor that absorbs a part of the blue light L1 and generates light of a different wavelength, for example, an yttrium aluminum garnet (YAG) phosphor and a binder that binds the phosphor. Therefore, the light converted by the wavelength conversion member 3 is mixed with the blue light L1 that is not converted into white light L2.

波長変換部材3と波長変換部材3を押し付けるための弾性部材たとえばばね5との間に圧力センサ6が設けられている。すなわち、波長変換部材3が固定構造4の波長変換部材保持部4cに正常に位置していれば、圧力センサ6はばね5の押し付け力を受けてたとえば高レベルの出力信号Sを発生し、他方、波長変換部材3が固定構造4の波長変換部材保持部4cから脱落しもしくは波長変換部材3が異常変形していれば、ばね5の押し付け力が弱くなるので圧力センサ6はたとえば低レベルの出力信号Sを発生する。   A pressure sensor 6 is provided between the wavelength conversion member 3 and an elastic member for pressing the wavelength conversion member 3 such as a spring 5. That is, if the wavelength conversion member 3 is normally positioned on the wavelength conversion member holding portion 4c of the fixed structure 4, the pressure sensor 6 receives the pressing force of the spring 5 to generate a high level output signal S, for example. If the wavelength conversion member 3 is detached from the wavelength conversion member holding portion 4c of the fixed structure 4 or the wavelength conversion member 3 is abnormally deformed, the pressing force of the spring 5 becomes weak, so that the pressure sensor 6 outputs, for example, a low level output. Generate signal S.

圧力センサ6の出力信号Sは制御部7たとえばA/D変換器、RAM、ROM等を内戴するマイクロコンピュータに供給される。   The output signal S of the pressure sensor 6 is supplied to a control unit 7 such as a microcomputer including an A / D converter, RAM, ROM and the like.

制御部7のCAN型半導体レーザ素子パッケージ1の通電動作を図2の制御ルーチンを参照して説明する。尚、図2の制御ルーチンは所定時間毎に実行される。   The energization operation of the CAN type semiconductor laser device package 1 of the control unit 7 will be described with reference to the control routine of FIG. The control routine of FIG. 2 is executed every predetermined time.

始めに、ステップ201において、圧力センサ6の出力信号SをA/D変換して取込む。   First, in step 201, the output signal S of the pressure sensor 6 is A / D converted and captured.

次に、ステップ202において、圧力センサ6の出力信号Sが所定値α以上か否かを判別する。この結果、S≧αであれば、ステップ203に進み、S<αであれば、ステップ204に進む。   Next, in step 202, it is determined whether or not the output signal S of the pressure sensor 6 is greater than or equal to a predetermined value α. As a result, if S ≧ α, the process proceeds to step 203, and if S <α, the process proceeds to step 204.

ステップ203では、圧力センサ6の出力信号Sが高レベルであり、従って、波長変換部材3が正常であるので、制御部7はCAN型半導体レーザ素子パッケージ1を通電状態にし、他方、ステップ204では、圧力センサ6の出力信号Sが低レベルであり、従って、波長変換部材3が脱落しもしくは異常変形しているので、制御部7はCAN型半導体レーザ素子パッケージ1の通電を停止する。   In step 203, since the output signal S of the pressure sensor 6 is at a high level, and therefore the wavelength conversion member 3 is normal, the control unit 7 energizes the CAN type semiconductor laser device package 1, while in step 204, Since the output signal S of the pressure sensor 6 is at a low level and the wavelength conversion member 3 is dropped or abnormally deformed, the control unit 7 stops energization of the CAN type semiconductor laser device package 1.

そして、ステップ205にてこの制御ルーチンは終了する。   In step 205, the control routine ends.

このように、波長変換部材3が脱落しもしくは異常変形した場合には、CAN型半導体レーザ素子パッケージ1の通電は停止されるので、半導体レーザ素子1の高出力の光がユーザ等の目に直接入ることを防止でき、ユーザ等の視力低下等を防止できる。   Thus, when the wavelength conversion member 3 is dropped or abnormally deformed, the energization of the CAN type semiconductor laser device package 1 is stopped, so that the high output light of the semiconductor laser device 1 is directly in the eyes of the user or the like. It is possible to prevent entry, and it is possible to prevent a decrease in visual acuity of the user or the like.

尚、上述の実施の形態においては、CAN型半導体レーザ素子パッケージ1の代りに他の半導体発光素子パッケージたとえば発光ダイオード(LED)素子パッケージを用いてもよい。   In the above-described embodiment, another semiconductor light emitting element package such as a light emitting diode (LED) element package may be used instead of the CAN type semiconductor laser element package 1.

また、本発明は上述の実施の形態の自明の範囲内でのいかなる変更にも適用し得る。   Further, the present invention can be applied to any change within the obvious range of the above-described embodiment.

本発明は、上述の車載用ヘッドライト以外に、表示装置、照明器具、ディスプレイ装置、液晶ディスプレイ装置のバックライト光源、プロジェクタ装置、レーザディスプレイ装置、内視鏡等に利用可能である。   The present invention can be used for a display device, a lighting fixture, a display device, a backlight light source of a liquid crystal display device, a projector device, a laser display device, an endoscope and the like in addition to the above-described vehicle headlight.

1:CAN型半導体レーザ素子パッケージ
2:集光凸レンズ
3:波長変換部材
4:固定構造
4a:光源保持部
4b:レンズ保持部
4c:波長変換部材保持部
4c’:透過窓
5:ばね
6:圧力センサ
7:制御部
1: CAN type semiconductor laser device package 2: Condensing convex lens
3: Wavelength converting member 4: Fixed structure 4a: Light source holding part 4b: Lens holding part
4c: Wavelength conversion member holding part 4c ': Transmission window 5: Spring 6: Pressure sensor 7: Control part

Claims (2)

半導体発光素子パッケージと、
該半導体発光素子パッケージからの光を波長変換する波長変換部材と、
前記半導体発光素子パッケージ及び前記波長変換部材を固定する固定構造と
を具備する半導体発光装置において、
前記波長変換部材を前記固定部材に押し付けるために弾性部材と、
該弾性部材と前記波長変換部材との間に設けられた圧力センサと、
該圧力センサの出力に基づいて前記半導体発光素子パッケージへの通電及び該通電の停止を行うための制御部と
を具備することを特徴とする半導体発光装置。
A semiconductor light emitting device package;
A wavelength conversion member that converts the wavelength of light from the semiconductor light emitting device package;
A semiconductor light emitting device comprising: a fixing structure for fixing the semiconductor light emitting element package and the wavelength conversion member;
An elastic member for pressing the wavelength conversion member against the fixing member;
A pressure sensor provided between the elastic member and the wavelength conversion member;
The semiconductor light emitting device characterized by comprising a control unit for performing the stop of energization and vent collector to the semiconductor light emitting device package on the basis of the output of the pressure sensor.
前記半導体発光素子パッケージは半導体レーザ素子パッケージである請求項1に記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element package is a semiconductor laser element package.
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