JP6045266B2 - イオン注入装置 - Google Patents
イオン注入装置 Download PDFInfo
- Publication number
- JP6045266B2 JP6045266B2 JP2012204942A JP2012204942A JP6045266B2 JP 6045266 B2 JP6045266 B2 JP 6045266B2 JP 2012204942 A JP2012204942 A JP 2012204942A JP 2012204942 A JP2012204942 A JP 2012204942A JP 6045266 B2 JP6045266 B2 JP 6045266B2
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- JP
- Japan
- Prior art keywords
- gas
- electrode roll
- ion implantation
- rectifying member
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/47—Generating plasma using corona discharges
- H05H1/473—Cylindrical electrodes, e.g. rotary drums
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
本発明の実施形態について、図1〜図4を用いて説明する。
本実施形態では、図5、6に示すように真空チャンバ11では、電極ロール13と真空チャンバ11の壁面との間には、整流部材42が設けられている点が実施形態1とは異なる。詳しくは後述するが、かかる整流部材42は、真空チャンバ内でのイオン注入ガスの流れを整流するものであり、これを設けることで均一性の高いプラズマを形成することができる。
本実施形態にかかるイオン注入装置では、実施形態2とは整流部材42Aの角度を調整することができるように構成されている点が異なっている。
2 排気口
3 フィルム
11 真空チャンバ
12 側壁面
13、13A 電極ロール
14 巻き出しロール
15 搬送ロール
16 巻き取りロール
21 真空ポンプ
22、22A 排気口
23、23A 電圧印加手段
31 ガス源
32 ガス管
33 制御手段
35 ガス導入部
36 ガス吹出口
37、37A 間隙
42、42A 整流部材
43 支持部
44 枠体
45 台座
46 支持部材
Claims (5)
- 真空チャンバと、フィルムが外周部の一部に巻き付けられる電極ロールと、該電極ロールに電圧を印加する電圧印加手段と、前記真空チャンバ内にイオン注入ガスを導入するためのガス吹出口を有するガス導入部と、前記真空チャンバ内のガスを排気するための排気口とを備え、前記ガス導入部と前記排気口が、前記電極ロールの軸方向において、該電極ロールを挟んで対向して設けられていること
を特徴とするイオン注入装置。 - 前記ガス導入部には、複数のガス吹出口が設けられていることを特徴とする請求項1記載のイオン注入装置。
- 前記ガス導入部の各ガス吹出口は、前記電極ロールの周縁に対向するように離間して設けられていることを特徴とする請求項2記載のイオン注入装置。
- 前記電極ロールと前記真空チャンバの壁面との間に、前記ガス導入部から前記排気口に向かうガスの流れに沿うように整流部材が設けられたことを特徴とする請求項1〜3のいずれか一項に記載のイオン注入装置。
- 前記整流部材が導電性金属から構成されることを特徴とする請求項4記載のイオン注入装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012204942A JP6045266B2 (ja) | 2012-09-18 | 2012-09-18 | イオン注入装置 |
CN201380042607.XA CN104540978B (zh) | 2012-09-18 | 2013-09-12 | 离子注入装置 |
EP13839132.1A EP2899294B1 (en) | 2012-09-18 | 2013-09-12 | Ion implantation device |
US14/420,377 US9336991B2 (en) | 2012-09-18 | 2013-09-12 | Ion implantation device |
KR1020157003265A KR102179644B1 (ko) | 2012-09-18 | 2013-09-12 | 이온 주입 장치 |
PCT/JP2013/074675 WO2014046003A1 (ja) | 2012-09-18 | 2013-09-12 | イオン注入装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012204942A JP6045266B2 (ja) | 2012-09-18 | 2012-09-18 | イオン注入装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014058724A JP2014058724A (ja) | 2014-04-03 |
JP6045266B2 true JP6045266B2 (ja) | 2016-12-14 |
Family
ID=50341317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012204942A Active JP6045266B2 (ja) | 2012-09-18 | 2012-09-18 | イオン注入装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9336991B2 (ja) |
EP (1) | EP2899294B1 (ja) |
JP (1) | JP6045266B2 (ja) |
KR (1) | KR102179644B1 (ja) |
CN (1) | CN104540978B (ja) |
WO (1) | WO2014046003A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110100040A (zh) * | 2017-11-28 | 2019-08-06 | 应用材料公司 | 用以涂布柔性基板的沉积设备、涂布柔性基板的方法及具有涂布的柔性基板 |
US20200318233A1 (en) * | 2017-11-28 | 2020-10-08 | Edgar Haberkorn | Deposition apparatus, method of coating a flexible substrate and flexible substrate having a coating |
USD956005S1 (en) | 2019-09-19 | 2022-06-28 | Applied Materials, Inc. | Shaped electrode |
CN115537749A (zh) * | 2022-09-08 | 2022-12-30 | 核工业西南物理研究院 | 一种用于连续人工磁通钉扎制备的离子辐照装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62274080A (ja) * | 1986-05-21 | 1987-11-28 | Hitachi Ltd | プラズマ処理方法 |
US5629054A (en) * | 1990-11-20 | 1997-05-13 | Canon Kabushiki Kaisha | Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method |
JPH05251391A (ja) | 1992-03-04 | 1993-09-28 | Tokyo Electron Tohoku Kk | 半導体ウエハーのプラズマ処理装置 |
US6096389A (en) * | 1995-09-14 | 2000-08-01 | Canon Kabushiki Kaisha | Method and apparatus for forming a deposited film using a microwave CVD process |
JP3732340B2 (ja) * | 1998-07-30 | 2006-01-05 | シャープ株式会社 | 薄膜形成装置及び薄膜形成方法 |
JP4192148B2 (ja) * | 2002-06-10 | 2008-12-03 | 東京エレクトロン株式会社 | 原子層堆積法処理装置 |
JP2005071661A (ja) * | 2003-08-20 | 2005-03-17 | Sekisui Chem Co Ltd | プラズマ処理装置 |
JP2006070238A (ja) | 2004-08-05 | 2006-03-16 | Lintec Corp | 高分子フィルムの連続的表面改質方法、連続的表面改質装置および表面部にイオン注入層が形成された高分子フィルム |
JP5291875B2 (ja) * | 2006-11-01 | 2013-09-18 | 富士フイルム株式会社 | プラズマ装置 |
KR100857845B1 (ko) * | 2007-05-29 | 2008-09-10 | 주식회사 다원시스 | 플라즈마 이온 주입 방법 및 장치 |
US9340869B2 (en) * | 2008-08-19 | 2016-05-17 | Lintec Corporation | Formed article, method for producing the same, electronic device member, and electronic device |
EP2410005B1 (en) * | 2009-03-17 | 2017-02-08 | LINTEC Corporation | Molded article, process for producing the molded article, member for electronic device, and electronic device |
JP5513320B2 (ja) * | 2010-08-31 | 2014-06-04 | 富士フイルム株式会社 | 成膜装置 |
JP5641877B2 (ja) * | 2010-10-29 | 2014-12-17 | 株式会社神戸製鋼所 | プラズマcvd装置 |
JP6045265B2 (ja) * | 2012-09-18 | 2016-12-14 | リンテック株式会社 | イオン注入装置 |
-
2012
- 2012-09-18 JP JP2012204942A patent/JP6045266B2/ja active Active
-
2013
- 2013-09-12 WO PCT/JP2013/074675 patent/WO2014046003A1/ja active Application Filing
- 2013-09-12 EP EP13839132.1A patent/EP2899294B1/en active Active
- 2013-09-12 CN CN201380042607.XA patent/CN104540978B/zh active Active
- 2013-09-12 US US14/420,377 patent/US9336991B2/en active Active
- 2013-09-12 KR KR1020157003265A patent/KR102179644B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP2899294A1 (en) | 2015-07-29 |
CN104540978B (zh) | 2016-08-17 |
US9336991B2 (en) | 2016-05-10 |
EP2899294A4 (en) | 2016-06-01 |
US20150206710A1 (en) | 2015-07-23 |
EP2899294B1 (en) | 2017-05-10 |
KR20150058148A (ko) | 2015-05-28 |
KR102179644B1 (ko) | 2020-11-17 |
WO2014046003A1 (ja) | 2014-03-27 |
JP2014058724A (ja) | 2014-04-03 |
CN104540978A (zh) | 2015-04-22 |
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