JP6014756B2 - フォトニックデバイスを断熱する方法および装置 - Google Patents
フォトニックデバイスを断熱する方法および装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 51
- 239000000463 material Substances 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 82
- 238000010438 heat treatment Methods 0.000 claims description 81
- 230000003287 optical effect Effects 0.000 claims description 63
- 238000009413 insulation Methods 0.000 claims description 42
- 230000015572 biosynthetic process Effects 0.000 claims description 36
- 238000005253 cladding Methods 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 9
- 235000012239 silicon dioxide Nutrition 0.000 claims 5
- 239000000377 silicon dioxide Substances 0.000 claims 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910021426 porous silicon Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 33
- 239000010703 silicon Substances 0.000 description 33
- 230000008569 process Effects 0.000 description 25
- 239000012212 insulator Substances 0.000 description 14
- 238000004891 communication Methods 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
- G02F1/3133—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type the optical waveguides being made of semiconducting materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/121—Channel; buried or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12135—Temperature control
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/15—Function characteristic involving resonance effects, e.g. resonantly enhanced interaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (22)
- 基板と、前記基板の上方に設けられたデバイス形成領域であって、クラッド物質を含むデバイス形成領域とを含むダイと、
前記デバイス形成領域の前記クラッド物質に埋め込まれた温度敏感性フォトニックデバイスと、
前記デバイス形成領域の前記クラッド物質に前記温度敏感性フォトニックデバイスと共に埋め込まれた加熱デバイスであって、前記温度敏感性フォトニックデバイスに温度制御を提供するよう構成された加熱デバイスと、
前記加熱デバイスの下に位置する前記基板の一部分に形成された断熱領域であって、前記加熱デバイスから前記ダイへと前記断熱領域の方向に熱が放散することを低減させる断熱領域と
を含み、
前記断熱領域の熱伝導率が前記クラッド物質の熱伝導率よりも小さい、
フォトニックシステム。 - 前記クラッド物質に前記温度敏感性フォトニックデバイス及び前記加熱デバイスとともに埋め込まれた光導波路をさらに備え、前記温度敏感性フォトニックデバイスの下部に位置する前記基板の部分と前記光導波路の下部に位置する前記基板の部分との間には前記断熱領域が設けられていない、
請求項1に記載のフォトニックシステム。 - 基板と、
前記基板の上方のデバイス形成領域であって、第1の熱伝導率を備えるクラッド領域を含むデバイス形成領域と、
前記デバイス形成領域の前記クラッド領域に埋め込まれた温度敏感性フォトニックデバイスと、
前記デバイス形成領域の前記クラッド領域に埋め込まれた加熱デバイスと、
前記加熱デバイスの下方に位置する前記基板のエリアに形成された第1の断熱領域であって、前記第1の断熱領域は第2の熱伝導率を備える第1の断熱領域と
を含み、
前記第2の熱伝導率は前記第1の熱伝導率よりも小さい、
集積回路。 - 集積回路を形成するための方法であって、
基板を提供することと、
前記基板に断熱領域を形成することと、
前記基板の上方に温度敏感性フォトニックデバイスを形成することと、
前記断熱領域の上方に加熱デバイスを形成することと、
前記温度敏感性フォトニックデバイスと前記加熱デバイスとを覆うクラッド物質を形成することと
を含み、
前記断熱領域の熱伝導率が前記クラッド物質の熱伝導率よりも小さい、
方法。 - 前記断熱領域を形成することは、
前記基板にトレンチをエッチングすることと、
前記トレンチに低熱伝導率物質を堆積することと
を含む、請求項4に記載の方法。 - 前記トレンチに前記低熱伝導率物質を堆積することは、二酸化シリコンを、前記二酸化シリコンよりも低い誘電率を有する物質でドーピングすることを含む、請求項5に記載の方法。
- 前記トレンチに前記低熱伝導率物質を堆積することは多孔性二酸化シリコンを堆積することを含む、請求項5に記載の方法。
- 前記断熱領域を形成することは前記加熱デバイスと、前記加熱デバイスの1部分に近接する物質との間に物理的間隙を形成すること含む、請求項4に記載の方法。
- 第1の断熱領域を含む基板と、
前記基板上に形成されたクラッド物質と、
前記クラッド物質に埋め込まれて形成された温度敏感性フォトニックデバイスと、
前記第1の断熱領域上に設けられた加熱デバイスであって、前記温度敏感性フォトニックデバイスと共に前記クラッド物質に埋め込まれて形成された加熱デバイスと、
を備え、
第1の断熱領域は前記クラッド物質とは異なる物質を含む
集積回路。 - 前記クラッド物質に前記温度敏感性フォトニックデバイス及び前記加熱デバイスとともに埋め込まれた光導波路をさらに備え、前記温度敏感性フォトニックデバイスの下部に位置する前記基板の部分と前記光導波路の下部に位置する前記基板の部分との間には前記第1の断熱領域が設けられていない請求項3又は9に記載の集積回路。
- 前記第1の断熱領域は酸化物を含み、前記酸化物には、前記酸化物よりも低い熱伝導率を有するドーパントがドーピングされている、請求項3又は9に記載の集積回路。
- 前記酸化物は二酸化シリコンを含み,前記ドーパントはフッ素含む、請求項11に記載の集積回路。
- 前記酸化物は二酸化シリコンを含み,前記ドーパントは炭素を含む、請求項11に記載の集積回路。
- 前記基板に設けられシャロートレンチアイソレーション領域をさらに備え、前記シャロートレンチアイソレーション領域は前記第1の断熱領域を含む、請求項3又は9に記載の集積回路。
- 前記第1の断熱領域と前記加熱デバイスとの間の第1の間隙と、前記クラッド物質と前記加熱デバイスとの間であって、前記加熱デバイスと前記温度敏感性フォトニックデバイスとの間を除く領域に形成された第2の間隙と、を備える、請求項3又は9に記載の集積回路。
- 前記温度敏感性フォトニックデバイスは搬送波変調器を含む、請求項3又は9に記載の集積回路。
- 前記第1の断熱領域は前記クラッド物質よりも低い熱伝導率を有する、請求項9に記載の集積回路。
- 前記温度敏感性フォトニックデバイスと、前記加熱デバイスとは、前記基板の水平面に沿って並んで形成されることを特徴とする請求項3又は9に記載の集積回路。
- 前記加熱デバイスは前記デバイス形成領域の中へと延長する少なくとも1つの相互接続部により機械的に支持される、請求項3に記載の集積回路。
- 前記基板に設けられ第2の断熱領域をさらに備える、請求項3又は9に記載の集積回路。
- 前記基板に設けられ第2の断熱領域をさらに備え、前記第2の断熱領域は前記第1の断熱領域内に設けられ、前記第2の断熱領域は第3の熱伝導率を備え、前記第3の熱伝導率は前記第1の熱伝導率よりも小さい、請求項3に記載の集積回路。
- 前記第2の断熱領域は前記第1の断熱領域とは離れて設けられ、前記第2の断熱領域上に位置する前記デバイス形成領域に入力デバイスをさらに備える、請求項20に記載の集積回路。
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Application Number | Priority Date | Filing Date | Title |
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US13/524,446 | 2012-06-15 | ||
US13/524,446 US9310552B2 (en) | 2012-06-15 | 2012-06-15 | Methods and apparatus providing thermal isolation of photonic devices |
PCT/US2013/045421 WO2013188542A1 (en) | 2012-06-15 | 2013-06-12 | Methods and apparatus providing thermal isolation of photonic devices |
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JP2015519618A JP2015519618A (ja) | 2015-07-09 |
JP6014756B2 true JP6014756B2 (ja) | 2016-10-25 |
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US (4) | US9310552B2 (ja) |
EP (1) | EP2862014B1 (ja) |
JP (1) | JP6014756B2 (ja) |
KR (1) | KR101688718B1 (ja) |
CN (1) | CN104395797B (ja) |
TW (1) | TWI496252B (ja) |
WO (1) | WO2013188542A1 (ja) |
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US10777722B2 (en) | 2020-09-15 |
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