JP6003246B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP6003246B2 JP6003246B2 JP2012127509A JP2012127509A JP6003246B2 JP 6003246 B2 JP6003246 B2 JP 6003246B2 JP 2012127509 A JP2012127509 A JP 2012127509A JP 2012127509 A JP2012127509 A JP 2012127509A JP 6003246 B2 JP6003246 B2 JP 6003246B2
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- JP
- Japan
- Prior art keywords
- light emitting
- type semiconductor
- semiconductor layer
- side pad
- pad electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- Led Device Packages (AREA)
- Led Devices (AREA)
Description
発光装置1の構成について、図面を参照しながら説明する。図1は、実施形態に係る発光装置1の構成を示す断面図である。
次に、発光素子10の構成について、図面を参照しながら説明する。図2は、実施形態に係る発光素子10の構成を示す平面図である。図3は、図2のIII-III線における断面図である。
発光素子10の製造方法について、図3を適宜参照しながら説明する。
本実施形態に係るp側パッド電極160の上面160Sを平面視した場合、p側パッド電極160は、全面電極150を取り囲んでいる。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
10…発光素子
20…パッケージ
21…第1リード
22…第2リード
23…封止部材
24…第1ボンディングワイヤ
25…第2ボンディングワイヤ
26…モールド部
110…成長基板
120…n型半導体層
130…発光層
140…p型半導体層
150…全面電極
160…p側パッド電極
170…n側パッド電極
180…保護層
180a…p側開口
180b…n側開口
Claims (7)
- n型半導体層と、
前記n型半導体層上に形成される発光層と、
前記発光層上に形成されるp型半導体層と、
前記p型半導体層の上面に接して配置され、透光性を有する全面電極と、
前記全面電極の上面全体に接して配置されるp側パッド電極と、を備え、
前記p側パッド電極の上面の平面視において、前記p側パッド電極は、前記全面電極を取り囲んでいる、発光素子を有し、
前記発光素子は、基台の上面に、前記n型半導体層を下面とし、かつ、前記p型半導体層を上面として実装される、
発光装置。 - 前記p側パッド電極の前記上面の平面視において、前記p側パッド電極は、前記p型半導体層の内側に設けられている、
請求項1に記載の発光装置。 - 前記全面電極は、前記p型半導体層の65%以上95%以下を覆っている、
請求項1または2に記載の発光装置。 - 前記全面電極は、ITO、IZOである、
請求項1乃至3のいずれか一項に記載の発光装置。 - 前記n型半導体層には、n側パッド電極が設けられ、
前記n側パッド電極は、前記n側パッド電極の上面の平面視において、前記n型半導体層の上面の平面視に対して20%以上45%以下の大きさを有している、
請求項1乃至4のいずれか一項に記載の発光装置。 - 前記p側パッド電極は、前記基台に設けられた配線金属と金属ワイヤを介して電気的に接続されている、
請求項1乃至5のいずれか一項に記載の発光装置。 - 前記p側パッド電極は、Ni/Pd/Pt/Au、Ni/Au/Pt/Au、Ti/Pt/Au、Ti/Pd/Pt/Auのいずれかの積層膜を備える、
請求項1乃至6のいずれか一項に記載の発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012127509A JP6003246B2 (ja) | 2012-06-04 | 2012-06-04 | 発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012127509A JP6003246B2 (ja) | 2012-06-04 | 2012-06-04 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013251512A JP2013251512A (ja) | 2013-12-12 |
JP6003246B2 true JP6003246B2 (ja) | 2016-10-05 |
Family
ID=49849886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012127509A Active JP6003246B2 (ja) | 2012-06-04 | 2012-06-04 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6003246B2 (ja) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5008262B2 (ja) * | 2005-03-02 | 2012-08-22 | 日亜化学工業株式会社 | 半導体発光素子 |
JP4867223B2 (ja) * | 2005-07-25 | 2012-02-01 | パナソニック株式会社 | 半導体発光素子およびこれを用いた照明装置 |
-
2012
- 2012-06-04 JP JP2012127509A patent/JP6003246B2/ja active Active
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JP2013251512A (ja) | 2013-12-12 |
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