JP6000315B2 - 光起電力素子の製造方法 - Google Patents
光起電力素子の製造方法 Download PDFInfo
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- JP6000315B2 JP6000315B2 JP2014210818A JP2014210818A JP6000315B2 JP 6000315 B2 JP6000315 B2 JP 6000315B2 JP 2014210818 A JP2014210818 A JP 2014210818A JP 2014210818 A JP2014210818 A JP 2014210818A JP 6000315 B2 JP6000315 B2 JP 6000315B2
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- Prior art keywords
- transparent conductive
- conductive film
- semiconductor layer
- type silicon
- substrate
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 78
- 239000004065 semiconductor Substances 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 86
- 229910052710 silicon Inorganic materials 0.000 description 86
- 239000010703 silicon Substances 0.000 description 86
- 238000000034 method Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000010248 power generation Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
上記構成により、1透明導電膜から裏面電極への漏れ電流を抑制した状態を維持しつつ第1透明導電膜の第1半導体層からのキャリアの集電効率を高めることができる。
上記構成により、キャリアの再結合損失を低減して光起電力素子の変換効率を高めることができる。
上記構成により、第1透明導電膜から裏面電極への漏れ電流を抑制して高効率な太陽電池モジュールとなる。
第1透明導電膜から裏面電極への漏れ電流を抑制して高効率な太陽光発電システムとなる。
本実施形態の光起電力素子10の製造工程について説明する。まず、一辺が156mmの正方形の単結晶系のn型のシリコン基板12を用意した。そして、プラズマCVD法により、シリコン基板12の第1の主面12aに非晶質のi型シリコン層14、及び非晶質のn型シリコン層16を順に積層し、第2の主面12bに非晶質のi型シリコン層22、及び非晶質のp型シリコン層24を順に積層した。
Claims (1)
- 一導電型の結晶系の半導体基板の第1の主面に一導電型の非晶質の第1半導体層を積層し、かつ前記半導体基板の第2の主面に他導電型の非晶質の第2半導体層を積層して得られる積層体を基板ホルダーに配置し、
前記積層体は、前記第2半導体層を積層した面を前記基板ホルダー側に向けて配置するものとし、
前記基板ホルダーには、前記積層体の前記第2半導体層を積層した面をその周縁部を残して露出させる開口部を予め形成しておき、
前記基板ホルダーに前記積層体を配置した状態で透明導電膜の材料を前記第1半導体層の主面および側面に向けて供給して第1透明導電膜を積層し、かつ前記開口部を通じて透明導電膜の材料を前記第2半導体層の主面に向けて供給して第2透明導電膜を積層し、
前記第1透明導電膜上に集電極を形成し、
前記第2透明導電膜上に裏面電極を形成することを特徴とする光起電力素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014210818A JP6000315B2 (ja) | 2014-10-15 | 2014-10-15 | 光起電力素子の製造方法 |
PCT/JP2015/074088 WO2016059884A1 (ja) | 2014-10-15 | 2015-08-26 | 光起電力素子、太陽電池モジュール、太陽光発電システム、光起電力素子の製造方法 |
TW104132398A TW201626586A (zh) | 2014-10-15 | 2015-10-01 | 光伏元件、太陽電池模組、太陽光發電系統、光伏元件之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014210818A JP6000315B2 (ja) | 2014-10-15 | 2014-10-15 | 光起電力素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016082025A JP2016082025A (ja) | 2016-05-16 |
JP6000315B2 true JP6000315B2 (ja) | 2016-09-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014210818A Expired - Fee Related JP6000315B2 (ja) | 2014-10-15 | 2014-10-15 | 光起電力素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6000315B2 (ja) |
TW (1) | TW201626586A (ja) |
WO (1) | WO2016059884A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019181835A1 (ja) * | 2018-03-23 | 2019-09-26 | 株式会社カネカ | 太陽電池およびその太陽電池を備えた電子機器 |
JP7271213B2 (ja) * | 2019-02-12 | 2023-05-11 | 株式会社カネカ | マスクトレイ、及び、太陽電池セルの製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3349308B2 (ja) * | 1995-10-26 | 2002-11-25 | 三洋電機株式会社 | 光起電力素子 |
WO2012105155A1 (ja) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
-
2014
- 2014-10-15 JP JP2014210818A patent/JP6000315B2/ja not_active Expired - Fee Related
-
2015
- 2015-08-26 WO PCT/JP2015/074088 patent/WO2016059884A1/ja active Application Filing
- 2015-10-01 TW TW104132398A patent/TW201626586A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2016082025A (ja) | 2016-05-16 |
TW201626586A (zh) | 2016-07-16 |
WO2016059884A1 (ja) | 2016-04-21 |
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