JP5979693B2 - Euv投影リソグラフィのための照明光学ユニット及び光学系 - Google Patents
Euv投影リソグラフィのための照明光学ユニット及び光学系 Download PDFInfo
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- JP5979693B2 JP5979693B2 JP2015509363A JP2015509363A JP5979693B2 JP 5979693 B2 JP5979693 B2 JP 5979693B2 JP 2015509363 A JP2015509363 A JP 2015509363A JP 2015509363 A JP2015509363 A JP 2015509363A JP 5979693 B2 JP5979693 B2 JP 5979693B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
- Microscoopes, Condenser (AREA)
Description
PB=(I1−I2)/(I1+I2)×100%
NILS=CD×d(lnI)/dx|I0
=CD/I0×dI/dx|I0
38 リング瞳寄与
RG 制限半径
Z 中心
Claims (10)
- 下流結像反射光学ユニットの物体視野と結像される反射性物体とを配置することができる照明視野を斜め照明するためのEUV投影リソグラフィのための照明光学ユニットであって、
前記斜め照明と前記結像される反射性物体の構造との相互作用に起因する該結像される反射性物体の構造変数(p)への結像テレセントリック性(ΔTC)の依存性が少なくとも部分的に補償されるような該結像される反射性物体の該構造変数(p)への該結像テレセントリック性(ΔTC)の依存性をもたらす照明瞳がもたらされるように具現化された瞳発生デバイス、
を含むことを特徴とする照明光学ユニット。 - 前記照明瞳が、
リング形状リング瞳寄与と、
前記リング形状リング瞳寄与のリング内の補償瞳寄与と、
を有することを特徴とする請求項1に記載の照明光学ユニット。 - 前記照明瞳が、
二重極瞳寄与と、
前記二重極瞳寄与の二重極の外側の補償瞳寄与と、
を有することを特徴とする請求項1に記載の照明光学ユニット。 - 前記照明瞳が、前記斜め照明の第1に照明入射平面(yz)に対して垂直であり(シグマx)、かつ第2に該斜め照明の該照明入射平面(yz)にある(シグマy)主物体視野座標(x,y)に対応する該照明瞳内の座標である少なくとも1つの主瞳座標(シグマx,シグマy)に関して鏡面非対称に設計されないことを特徴とする請求項1から請求項3のいずれか1項に記載の照明光学ユニット。
- 請求項1から請求項4のいずれか1項に記載の照明光学ユニットを含み、
物体視野を像視野に結像するための下流結像反射光学ユニットを含む、
ことを特徴とする光学系。 - 下流結像反射光学ユニットの物体視野と結像される反射性物体とを配置することができる照明視野を斜め照明するための照明光学ユニットを含み、
前記下流結像反射光学ユニットを含み、
斜め照明に起因する前記結像される反射性物体の構造変数(p)への結像フォーカスシフト(bfs)の依存性が少なくとも部分的に補償されるような該結像される反射性物体の該構造変数(p)への該結像フォーカスシフト(bfs)の依存性をもたらす前記下流結像反射光学ユニットの波面がもたらされるように具現化された波面操作デバイスを含む、
ことを特徴とするEUV投影リソグラフィのための光学系。 - 前記下流結像反射光学ユニットは、波面操作デバイスとしての少なくとも1つの波面マニピュレータを有することを特徴とする請求項6に記載の光学系。
- 請求項5から請求項7のいずれか1項に記載の光学系を含み、
EUV光源を含む、
ことを特徴とする投影露光装置。 - 請求項5から請求項7のいずれか1項に記載の光学系を設定する方法であって、
予め定められた基準物体の物体構造変数(p)に依存する物体結像変数(ΔTC,bfs)を決定する段階と、
結像変数値の予め定められた許容誤差範囲内にある構造依存合計結像変数(ΔTC,bfs)がもたらされるように補償結像パラメータを予め定める段階と、
を含むことを特徴とする方法。 - 構造化構成要素を生成する方法であって、
感光材料から構成された層が少なくとも部分的に塗布されたウェーハを与える段階と、
結像される構造を有するレチクルを与える段階と、
請求項8に記載の投影露光装置を与える段階と、
請求項9に記載の方法を用いて前記投影露光装置の光学系を設定する段階と、
前記投影露光装置を用いて前記レチクルの少なくとも一部を前記ウェーハの前記層の領域上に投影する段階と、
を含むことを特徴とする方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012207377.9 | 2012-05-03 | ||
DE102012207377A DE102012207377A1 (de) | 2012-05-03 | 2012-05-03 | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
US201261642683P | 2012-05-04 | 2012-05-04 | |
US61/642,683 | 2012-05-04 | ||
PCT/EP2013/058171 WO2013164207A1 (en) | 2012-05-03 | 2013-04-19 | Illumination optical unit and optical system for euv projection lithography |
Publications (3)
Publication Number | Publication Date |
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JP2015517729A JP2015517729A (ja) | 2015-06-22 |
JP2015517729A5 JP2015517729A5 (ja) | 2016-05-26 |
JP5979693B2 true JP5979693B2 (ja) | 2016-08-24 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2015509363A Active JP5979693B2 (ja) | 2012-05-03 | 2013-04-19 | Euv投影リソグラフィのための照明光学ユニット及び光学系 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20150042974A1 (ja) |
JP (1) | JP5979693B2 (ja) |
KR (1) | KR102092365B1 (ja) |
DE (1) | DE102012207377A1 (ja) |
TW (2) | TWI633399B (ja) |
WO (1) | WO2013164207A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012207377A1 (de) | 2012-05-03 | 2013-11-07 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
DE102014203188A1 (de) * | 2014-02-21 | 2015-08-27 | Carl Zeiss Smt Gmbh | Verfahren zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage |
CN107223217B (zh) * | 2015-02-11 | 2020-06-02 | 卡尔蔡司Smt有限责任公司 | Euv投射光刻的照明光学*** |
US9875534B2 (en) * | 2015-09-04 | 2018-01-23 | Kla-Tencor Corporation | Techniques and systems for model-based critical dimension measurements |
DE102016222033A1 (de) | 2016-11-10 | 2016-12-29 | Carl Zeiss Smt Gmbh | Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage |
ES2887976T3 (es) * | 2017-09-08 | 2021-12-29 | Tobii Ab | Compensación del radio de la pupila |
DE102019214269A1 (de) * | 2019-09-19 | 2021-03-25 | Carl Zeiss Smt Gmbh | Facettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage |
DE102020210829A1 (de) | 2020-08-27 | 2022-03-03 | Carl Zeiss Smt Gmbh | Pupillenfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage |
DE102021203961B3 (de) | 2021-04-21 | 2022-08-25 | Carl Zeiss Smt Gmbh | Pupillenblende für eine Beleuchtungsoptik eines Metrologiesystems, Beleuchtungsoptik und Metrologiesystem |
DE102021120952B3 (de) * | 2021-08-11 | 2022-11-10 | Carl Zeiss Smt Gmbh | Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop |
Family Cites Families (26)
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JP3259373B2 (ja) | 1992-11-27 | 2002-02-25 | 株式会社日立製作所 | 露光方法及び露光装置 |
US5680588A (en) * | 1995-06-06 | 1997-10-21 | International Business Machines Corporation | Method and system for optimizing illumination in an optical photolithography projection imaging system |
US6859515B2 (en) | 1998-05-05 | 2005-02-22 | Carl-Zeiss-Stiftung Trading | Illumination system, particularly for EUV lithography |
DE10138313A1 (de) | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
US6573975B2 (en) * | 2001-04-04 | 2003-06-03 | Pradeep K. Govil | DUV scanner linewidth control by mask error factor compensation |
US7042550B2 (en) * | 2002-11-28 | 2006-05-09 | Asml Netherlands B.V. | Device manufacturing method and computer program |
JP2004252358A (ja) * | 2003-02-21 | 2004-09-09 | Canon Inc | 反射型投影光学系及び露光装置 |
DE602005018648D1 (de) * | 2004-07-14 | 2010-02-11 | Zeiss Carl Smt Ag | Katadioptrisches projektionsobjektiv |
JP4701030B2 (ja) * | 2005-07-22 | 2011-06-15 | キヤノン株式会社 | 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム |
DE102006059024A1 (de) | 2006-12-14 | 2008-06-19 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil |
US8937706B2 (en) * | 2007-03-30 | 2015-01-20 | Asml Netherlands B.V. | Lithographic apparatus and method |
DE102007019570A1 (de) | 2007-04-25 | 2008-10-30 | Carl Zeiss Smt Ag | Spiegelanordnung, Kontaktierungsanordnung und optisches System |
JP2009043933A (ja) * | 2007-08-08 | 2009-02-26 | Canon Inc | 露光装置、調整方法、露光方法及びデバイス製造方法 |
US20090097001A1 (en) * | 2007-10-15 | 2009-04-16 | Qimonda Ag | Non-Telecentric Lithography Apparatus and Method of Manufacturing Integrated Circuits |
DE102008000990B3 (de) | 2008-04-04 | 2009-11-05 | Carl Zeiss Smt Ag | Vorrichtung zur mikrolithographischen Projektionsbelichtung und Verfahren zum Prüfen einer derartigen Vorrichtung |
DE102008001511A1 (de) * | 2008-04-30 | 2009-11-05 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
DE102008042438B4 (de) | 2008-09-29 | 2010-11-04 | Carl Zeiss Smt Ag | Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen |
JP6041304B2 (ja) * | 2009-03-27 | 2016-12-07 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Euvマイクロリソグラフィ用の照明光学系、この種の照明光学系用のeuv減衰器、及びこの種の照明光学系を有する照明系及び投影露光装置 |
DE102010003167A1 (de) | 2009-05-29 | 2010-10-14 | Carl Zeiss Smt Ag | Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, sowie Beleuchtungseinrichtung |
WO2011006522A1 (en) * | 2009-07-17 | 2011-01-20 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus and method of measuring a parameter related to an optical surface contained therein |
DE102009054540B4 (de) | 2009-12-11 | 2011-11-10 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Mikrolithographie |
NL2005724A (en) | 2009-12-23 | 2011-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
DE102010029765A1 (de) | 2010-06-08 | 2011-12-08 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Projektionslithografie |
JP5830089B2 (ja) * | 2010-06-15 | 2015-12-09 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Euvリソグラフィ用のマスク、euvリソグラフィシステム、及びマスクの結像を最適化する方法 |
DE102010041746A1 (de) * | 2010-09-30 | 2012-04-05 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung |
DE102012207377A1 (de) | 2012-05-03 | 2013-11-07 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
-
2012
- 2012-05-03 DE DE102012207377A patent/DE102012207377A1/de not_active Ceased
-
2013
- 2013-04-19 WO PCT/EP2013/058171 patent/WO2013164207A1/en active Application Filing
- 2013-04-19 KR KR1020147033758A patent/KR102092365B1/ko active IP Right Grant
- 2013-04-19 JP JP2015509363A patent/JP5979693B2/ja active Active
- 2013-05-02 TW TW106136162A patent/TWI633399B/zh active
- 2013-05-02 TW TW102115781A patent/TWI607286B/zh active
-
2014
- 2014-10-09 US US14/510,725 patent/US20150042974A1/en not_active Abandoned
-
2019
- 2019-10-10 US US16/598,408 patent/US10976668B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2015517729A (ja) | 2015-06-22 |
TW201805735A (zh) | 2018-02-16 |
TWI607286B (zh) | 2017-12-01 |
DE102012207377A1 (de) | 2013-11-07 |
TWI633399B (zh) | 2018-08-21 |
KR20150013660A (ko) | 2015-02-05 |
US20150042974A1 (en) | 2015-02-12 |
KR102092365B1 (ko) | 2020-03-24 |
US10976668B2 (en) | 2021-04-13 |
TW201411292A (zh) | 2014-03-16 |
WO2013164207A1 (en) | 2013-11-07 |
US20200041911A1 (en) | 2020-02-06 |
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