JP5972593B2 - Semiconductor power converter - Google Patents

Semiconductor power converter Download PDF

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JP5972593B2
JP5972593B2 JP2012026632A JP2012026632A JP5972593B2 JP 5972593 B2 JP5972593 B2 JP 5972593B2 JP 2012026632 A JP2012026632 A JP 2012026632A JP 2012026632 A JP2012026632 A JP 2012026632A JP 5972593 B2 JP5972593 B2 JP 5972593B2
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semiconductor power
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貴幸 清水
貴幸 清水
吉野　輝雄
輝雄 吉野
智嗣 石塚
智嗣 石塚
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Toshiba Mitsubishi Electric Industrial Systems Corp
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Description

本発明は、複数の半導体電力変換器を直列接続又は並列接続した多重半導体電力変換装置及び単数の半導体電力変換器を接続した半導体電力変換装置に関する。   The present invention relates to a multiple semiconductor power converter in which a plurality of semiconductor power converters are connected in series or in parallel, and a semiconductor power converter in which a single semiconductor power converter is connected.

特許文献１には、出力側に絶縁変圧器が接続されていない第１のインバータの出力電圧に、少なくとも１台以上の第２インバータの出力電圧を絶縁変圧器を介して加算し、前記第１及び第２のインバータの各出力電圧を合成して得られた交流電力を負荷に供給するための多重インバータ制御装置において、前記第１のインバータ（例えば高調波を多く発生するもの）の出力電圧を検出する電圧検出器と、前記第１のインバータの出力電圧に含まれるリップル電圧に基づいて前記第２のインバータに対する電圧基準値を補正する補正手段を設け、前記第２のインバータの出力電圧により、前記第１のインバータの出力電圧に含まれるリップル電圧を相殺するようにした点が記載されている。   In Patent Document 1, the output voltage of at least one or more second inverters is added via an insulation transformer to the output voltage of a first inverter to which no insulation transformer is connected on the output side, and the first And a multiple inverter control device for supplying AC power obtained by combining the output voltages of the second inverter to the load, the output voltage of the first inverter (for example, one that generates a lot of harmonics) A voltage detector to detect, and a correction means for correcting a voltage reference value for the second inverter based on a ripple voltage included in the output voltage of the first inverter, the output voltage of the second inverter, It is described that the ripple voltage included in the output voltage of the first inverter is canceled out.

特開平３−７０４７２号公報Japanese Unexamined Patent Publication No. 3-70472

前述した特許文献１に記載の発明にあっては、次の問題点が挙げられる。   The invention described in Patent Document 1 mentioned above has the following problems.

（１）直列多重接続構成において、全段のインバータの中で特定のインバータから発生する高調波のみを抑制するための制御方式であり、全段のインバータを合成した出力を補償するものではない。 (1) In a serial multiple connection configuration, this is a control method for suppressing only harmonics generated from a specific inverter among all stages of inverters, and does not compensate for an output synthesized from all stages of inverters.

（２）インバータ１台あるいはインバータの並列多重接続の構成における高調波抑制方式については触れられていない。 (2) No mention is made of a harmonic suppression method in the configuration of one inverter or a parallel multiple connection of inverters.

本発明は、交流電流に含まれる高調波の抑制を図ることができる半導体電力変換装置を提供することを目的とする。   An object of this invention is to provide the semiconductor power converter device which can aim at suppression of the harmonic contained in alternating current.

前記目的を達成するため、請求項１に対応する発明は、直流電力系統と交流電力系統の間に接続され、直流電力を交流電力、又は交流電力を直流電力に変換する半導体電力変換器を複数個電気的に接続し、前記各半導体電力変換器毎に、各々設けられる電圧指令値発生器からの電圧指令値に基づき得られるゲート信号を、前記各半導体電力変換器に与えるゲート制御器を備えた半導体電力変換装置において、前記各電力変換器における交流電流信号又は交流電圧信号の合成値或いは前記各ゲート信号の合成値を検出し、この検出値に含まれる高調波成分を抽出し、この高調波成分を最小値とする共通の高調波補償制御器と、
を具備した半導体電力変換装置である。 In order to achieve the above object, the invention corresponding to claim 1 is provided with a plurality of semiconductor power converters connected between a DC power system and an AC power system and converting DC power into AC power or AC power into DC power. A gate controller that electrically connects each of the semiconductor power converters and supplies the semiconductor power converter with a gate signal obtained based on a voltage command value from a voltage command value generator provided for each semiconductor power converter; In the semiconductor power conversion device, a combined value of the alternating current signal or the alternating voltage signal or a combined value of the gate signals in each power converter is detected, and a harmonic component included in the detected value is extracted, and the harmonics are extracted. A common harmonic compensation controller that minimizes the wave component;
Is a semiconductor power conversion device.

前記目的を達成するため、請求項２に対応する発明は、直流電力系統と交流電力系統の間に接続され、直流電力を交流電力、又は交流電力を直流電力に変換する半導体電力変換器を複数個電気的に直列接続し、前記各半導体電力変換器毎に、各々設けられる電圧指令値発生器からの電圧指令値に基づき得られるゲート信号を、前記各半導体電力変換器に与えるゲート制御器を備えた半導体電力変換装置において、前記各電力変換器における交流電流信号又は交流電圧信号の合成値或いは前記各ゲート信号の合成値を検出し、この検出値に含まれる高調波成分を抽出し、この高調波成分を最小値とする共通の高調波補償制御器と、を具備した半導体電力変換装置である。 In order to achieve the object, the invention corresponding to claim 2 is provided with a plurality of semiconductor power converters connected between a DC power system and an AC power system and converting DC power into AC power or AC power into DC power. A gate controller that electrically connects each of the semiconductor power converters, and provides each semiconductor power converter with a gate signal obtained based on a voltage command value from a voltage command value generator provided for each semiconductor power converter. In the semiconductor power converter provided, the combined value of the alternating current signal or alternating voltage signal or the combined value of the gate signals in each power converter is detected, and the harmonic component included in the detected value is extracted, A semiconductor power conversion device including a common harmonic compensation controller that minimizes a harmonic component.

前記目的を達成するため、請求項３に対応する発明は、直流電力系統と交流電力系統の間に接続され、直流電力を交流電力、又は交流電力を直流電力に変換する半導体電力変換器を複数個電気的に並列接続し、前記各半導体電力変換器毎に、各々設けられる電圧指令値発生器からの電圧指令値に基づき得られるゲート信号を、前記各半導体電力変換器に与えるゲート制御器を備えた半導体電力変換装置において、前記各電力変換器における交流電流信号又は交流電圧信号の合成値或いは前記各ゲート信号の合成値を検出し、この検出値に含まれる高調波成分を抽出し、この高調波成分を最小値とする共通の高調波補償制御器と、を具備した半導体電力変換装置である。
In order to achieve the above object, the invention corresponding to claim 3 is provided with a plurality of semiconductor power converters connected between a DC power system and an AC power system and converting DC power into AC power or AC power into DC power. pieces electrically connected in parallel, said each semiconductor power converter, each gate signal obtained based on the voltage command value from the voltage command value generator is provided, the gate controller providing said each semiconductor power converter In the semiconductor power converter provided, the combined value of the alternating current signal or alternating voltage signal or the combined value of the gate signals in each power converter is detected, and the harmonic component included in the detected value is extracted, A semiconductor power conversion device including a common harmonic compensation controller that minimizes a harmonic component.

本発明の多重半導体電力変換装置の第１の実施形態の概略を示す回路図。The circuit diagram which shows the outline of 1st Embodiment of the multiple semiconductor power converter device of this invention. 本発明の多重半導体電力変換装置の第２の実施形態の概略を示す回路図。The circuit diagram which shows the outline of 2nd Embodiment of the multiple semiconductor power converter device of this invention. 本発明の多重半導体電力変換装置の第３の実施形態の概略を示す回路図。The circuit diagram which shows the outline of 3rd Embodiment of the multiple semiconductor power converter device of this invention.

図１は本発明の多重半導体電力変換装置の第１の実施形態を示す回路図で、直流電力系統例えばバッテリ１と交流電力系統又は負荷２の間に接続され、直流電力を交流電力に変換する半導体電力変換器（例えば４個の半導体素子がブリッジ接続されたもの）３１、３２…３Ｎを複数個電気的に直列接続し、各半導体電力変換器３１、３２…３Ｎ毎に、電圧指令値発生器４１、４２…４Ｎからの電圧指令値に基づき得られるゲート信号を与えるゲート制御器（例えばＰＷＭ制御器）５１、５２…５Ｎを備え、半導体電力変換器３１、３２…３Ｎと交流電力系統又は負荷２の間に絶縁変圧器６１、６２…６Ｎが接続された多重半導体電力変換装置において、以下の構成を具備したものである。   FIG. 1 is a circuit diagram showing a first embodiment of a multiple semiconductor power conversion device of the present invention, which is connected between a DC power system, for example, a battery 1 and an AC power system or a load 2 and converts DC power to AC power. A plurality of semiconductor power converters (for example, four semiconductor elements connected in a bridge) 31, 32... 3N are electrically connected in series, and a voltage command value is generated for each semiconductor power converter 31, 32. , 5N, and a semiconductor power converter 31, 32,... 5N and an AC power system, or a gate controller (for example, PWM controller) 51, 52,. In the multiple semiconductor power conversion device in which the isolation transformers 61, 62,... 6N are connected between the loads 2, the following configuration is provided.

各電力変換器３１、３２…３Ｎにおける交流電流信号又は交流電圧信号の合成値或いは各ゲート信号の合成値を検出し、この検出値に含まれる高調波成分を抽出し、この高調波成分を最小値とする高調波補償制御器７を具備したものである。   A combined value of an alternating current signal or an alternating voltage signal or a combined value of each gate signal in each power converter 31, 32,... 3N is detected, a harmonic component included in the detected value is extracted, and this harmonic component is minimized. A harmonic compensation controller 7 having a value is provided.

高調波補償制御器７は、具体的には各電力変換器３１、３２…３Ｎにおける交流電流信号を検出する電流検出器１１又は交流電圧信号を検出する電圧検出器１２或いは各ゲート信号を検出するゲート信号検出器１３１、１３２…１３Ｎと、前記電流検出器１１又は前記電圧検出器１２或いは前記ゲート信号検出器１３１、１３２…１３Ｎの検出値に含まれる高調波成分を抽出する高調波成分抽出器８と、高調波成分抽出器８で抽出した高調波成分を最小にするための補正用電圧指令値を求める補償器９と、電圧指令値発生器４１、４２…４Ｎからの電圧指令値に、前記補償器で求めた補正用電圧指令値を加算した加算値をゲート制御器５１、５２…５Ｎの電圧指令値とする加算器１０１、１０２…１０Ｎとを備えたものである。   Specifically, the harmonic compensation controller 7 detects the current detector 11 that detects the alternating current signal in each of the power converters 31, 32,... 3N, the voltage detector 12 that detects the alternating voltage signal, or each gate signal. Gate signal detectors 131, 132,... 13N, and harmonic component extractors that extract harmonic components contained in the detection values of the current detector 11, the voltage detector 12, or the gate signal detectors 131, 132,. 8, the compensator 9 for obtaining a correction voltage command value for minimizing the harmonic component extracted by the harmonic component extractor 8, and the voltage command values from the voltage command value generators 41, 42. Are provided with adders 101, 102,..., 10N that use the addition value obtained by adding the correction voltage command values obtained by the compensator as voltage command values of the gate controllers 51, 52,.

以上述べた本発明の多重半導体電力変換装置の実施形態によれば、各電力変換器３１、３２…３Ｎの出力合成値、具体的には交流電流（出力電流）、交流電圧（出力電圧）、ゲート信号に含まれる高調波成分を高調波成分抽出器８により抽出し、この抽出した高調波成分が補償器９に入力され、ここで抽出した高調波成分を最小値とする補正用電圧指令値を出力し、この補正用電圧指令値を加算器１０１、１０２…１０Ｎにより電圧指令値発生器４１、４２…４Ｎからの電圧指令値にそれぞれ加算され、この加算された電圧指令値がゲート制御器（例えばＰＷＭ制御器）５１、５２…５Ｎに与えられる。この結果、高調波補償が可能となる。   According to the embodiment of the multiple semiconductor power conversion device of the present invention described above, the output composite value of each power converter 31, 32... 3N, specifically, alternating current (output current), alternating voltage (output voltage), The harmonic component contained in the gate signal is extracted by the harmonic component extractor 8, and the extracted harmonic component is input to the compensator 9, and the corrected voltage command value having the extracted harmonic component as the minimum value is input here. .. Are added to the voltage command values from the voltage command value generators 41, 42... 4N by the adders 101, 102... 10N, respectively, and the added voltage command values are added to the gate controller. (For example, PWM controller) 51, 52... 5N. As a result, harmonic compensation becomes possible.

図２は本発明の多重半導体電力変換装置の第２の実施形態を示す回路図で、直流電力系統例えばバッテリ１と交流電力系統又は負荷２の間に接続され、直流電力を交流電力に変換する半導体電力変換器（例えば４個の半導体素子がブリッジ接続されたもの）３１、３２…３Ｎを複数個電気的に並列接続し、各半導体電力変換器３１、３２…３Ｎ毎に、電圧指令値発生器４１、４２…４Ｎからの電圧指令値に基づき得られるゲート信号を与えるゲート制御器（例えばＰＷＭ制御器）５１、５２…５Ｎを備え、半導体電力変換器３１、３２…３Ｎと交流電力系統又は負荷２の間にリアクトル１４１、１４２…１４Ｎが接続された多重半導体電力変換装置において、前述の図１の実施形態と同様に、各電力変換器３１、３２…３Ｎにおける交流電流信号又は交流電圧信号の合成値或いは各ゲート信号の合成値を検出し、この検出値に含まれる高調波成分を抽出し、この高調波成分を最小値とする高調波補償制御器７を具備したものである。   FIG. 2 is a circuit diagram showing a second embodiment of the multiple semiconductor power conversion device of the present invention, which is connected between a DC power system, for example, a battery 1 and an AC power system or a load 2, and converts DC power into AC power. A plurality of semiconductor power converters (for example, four semiconductor elements connected in a bridge) 31, 32... 3N are electrically connected in parallel, and a voltage command value is generated for each semiconductor power converter 31, 32. , 5N, and a semiconductor power converter 31, 32,... 5N and an AC power system, or a gate controller (for example, PWM controller) 51, 52,. In the multiple semiconductor power conversion apparatus in which the reactors 141, 142,... 14N are connected between the loads 2, the alternating currents in the power converters 31, 32,... 3N are the same as in the embodiment of FIG. A harmonic compensation controller 7 for detecting a synthesized value of the signal or AC voltage signal or a synthesized value of each gate signal, extracting a harmonic component contained in the detected value, and setting the harmonic component to a minimum value is provided. Is.

高調波補償制御器７は、具体的には各電力変換器３１、３２…３Ｎにおける交流電流信号を検出する電流検出器１１又は交流電圧信号を検出する電圧検出器１２或いは各ゲート信号を検出するゲート信号検出器１３１、１３２…１３Ｎと、前記電流検出器１１又は前記電圧検出器１２或いは前記ゲート信号検出器１３１、１３２…１３Ｎの検出値に含まれる高調波成分を抽出する高調波成分抽出器８と、高調波成分抽出器８で抽出した高調波成分を最小にするための補正用電圧指令値を求める補償器９と、電圧指令値発生器４１、４２…４Ｎからの電圧指令値に、前記補償器で求めた補正用電圧指令値を加算した加算値をゲート制御器５１、５２…５Ｎの電圧指令値とする加算器１０１、１０２…１０Ｎとを備えたものである。   Specifically, the harmonic compensation controller 7 detects the current detector 11 that detects the alternating current signal in each of the power converters 31, 32,... 3N, the voltage detector 12 that detects the alternating voltage signal, or each gate signal. Gate signal detectors 131, 132,... 13N, and harmonic component extractors that extract harmonic components contained in the detection values of the current detector 11, the voltage detector 12, or the gate signal detectors 131, 132,. 8, the compensator 9 for obtaining a correction voltage command value for minimizing the harmonic component extracted by the harmonic component extractor 8, and the voltage command values from the voltage command value generators 41, 42. Are provided with adders 101, 102,..., 10N that use the addition value obtained by adding the correction voltage command values obtained by the compensator as voltage command values of the gate controllers 51, 52,.

以上述べた本発明の多重半導体電力変換装置の実施形態によれば、各電力変換器３１、３２…３Ｎの出力合成値、具体的には交流電流（出力電流）、交流電圧（出力電圧）、ゲート信号に含まれる高調波成分を高調波成分抽出器８により抽出し、この抽出した高調波成分が補償器９に入力され、ここで抽出した高調波成分を最小値とする補正用電圧指令値を出力し、この補正用電圧指令値を加算器１０１、１０２…１０Ｎにより電圧指令値発生器４１、４２…４Ｎからの電圧指令値にそれぞれ加算され、この加算された電圧指令値がゲート制御器（例えばＰＷＭ制御器）５１、５２…５Ｎに与えられる。この結果、図２の実施形態によれば高調波補償が可能となる。図１及び図２の実施形態によれば、各電力変換器の回路構成に依存せず、直列多重接続と並列多重接続方式の両方で高調波補償が可能である。   According to the embodiment of the multiple semiconductor power conversion device of the present invention described above, the output composite value of each power converter 31, 32... 3N, specifically, alternating current (output current), alternating voltage (output voltage), The harmonic component contained in the gate signal is extracted by the harmonic component extractor 8, and the extracted harmonic component is input to the compensator 9, and the corrected voltage command value having the extracted harmonic component as the minimum value is input here. .. Are added to the voltage command values from the voltage command value generators 41, 42... 4N by the adders 101, 102... 10N, respectively, and the added voltage command values are added to the gate controller. (For example, PWM controller) 51, 52... 5N. As a result, harmonic compensation is possible according to the embodiment of FIG. According to the embodiment of FIG. 1 and FIG. 2, harmonic compensation is possible by both the serial multiple connection method and the parallel multiple connection method without depending on the circuit configuration of each power converter.

図３は本発明の多重半導体電力変換装置の第３の実施形態を示す回路図で、直流電力系統例えばバッテリ１と交流電力系統又は負荷２の間に接続され、直流電力を交流電力に変換する例えば三相半導体電力変換器３を接続し、半導体電力変換器３、電圧指令値発生器４からの電圧指令値に基づき得られるゲート信号を与えるゲート制御器（例えばＰＷＭ制御器）５を備え、半導体電力変換器３と交流電力系統又は負荷２の間にリアクトル１４が接続された半導体電力変換装置において、以下の構成を具備したものである。   FIG. 3 is a circuit diagram showing a third embodiment of the multiple semiconductor power conversion device of the present invention, which is connected between a DC power system, for example, a battery 1 and an AC power system or a load 2 and converts DC power into AC power. For example, a three-phase semiconductor power converter 3 is connected, and a gate controller (for example, a PWM controller) 5 that provides a gate signal obtained based on the voltage command value from the semiconductor power converter 3 and the voltage command value generator 4 is provided. A semiconductor power conversion apparatus in which a reactor 14 is connected between a semiconductor power converter 3 and an AC power system or a load 2 has the following configuration.

電力変換器３における交流電流信号又は交流電圧信号或いはゲート信号を検出し、この検出値に含まれる高調波成分を抽出し、この高調波成分に対して高い補償ゲインを持つ高調波補償制御器７を具備したものである。   An AC current signal, AC voltage signal, or gate signal in the power converter 3 is detected, a harmonic component included in the detected value is extracted, and a harmonic compensation controller 7 having a high compensation gain with respect to the harmonic component. Is provided.

高調波補償制御器７は、具体的には電力変換器３における交流電流信号を検出する電流検出器１１又は交流電圧信号を検出する電圧検出器１２或いはゲート信号を検出するゲート信号検出器１３と、前記電流検出器１１又は前記電圧検出器１２或いは前記ゲート信号検出器１３の検出値に含まれる高調波成分を抽出する高調波成分抽出器８と、高調波成分抽出器８で抽出した高調波成分を打消す高い補償ゲインを持つ補償器９と、電圧指令値発生器４からの電圧指令値に、前記補償器の高い補償ゲインで求めた補正用電圧指令値を加算した加算値をゲート制御器５の電圧指令値とする加算器１０とを備えたものである。   Specifically, the harmonic compensation controller 7 includes a current detector 11 that detects an alternating current signal in the power converter 3, a voltage detector 12 that detects an alternating voltage signal, or a gate signal detector 13 that detects a gate signal. , A harmonic component extractor 8 for extracting a harmonic component contained in a detection value of the current detector 11, the voltage detector 12, or the gate signal detector 13, and a harmonic extracted by the harmonic component extractor 8. Compensator 9 having a high compensation gain for canceling the component, and gate control of an addition value obtained by adding the voltage command value for correction obtained by the high compensation gain of the compensator to the voltage command value from voltage command value generator 4 And an adder 10 that serves as a voltage command value for the device 5.

以上述べた本発明の第３の実施形態によれば、高調波補償器９で演算した高調波補償電圧指令値を、加算器１０により従来のゲート制御器５の電圧指令値に加算したので、電流検出器１１又は電圧検出器１２或いはゲート信号検出器１３の検出値に含まれる高調波成分を抑制できる。   According to the third embodiment of the present invention described above, the harmonic compensation voltage command value calculated by the harmonic compensator 9 is added to the voltage command value of the conventional gate controller 5 by the adder 10. The harmonic component contained in the detection value of the current detector 11, the voltage detector 12, or the gate signal detector 13 can be suppressed.

前述の図１の実施形態の電力変換装置は複数個の単相ブリッジを直列多重化した単相電力変換装置であるが、これを複数の単相ブリッジを三相結線した三相電力変換装置及び三相ブリッジを複数個直列多重化した三相電力変換装置であってもよい。   1 is a single-phase power conversion device in which a plurality of single-phase bridges are serially multiplexed. A three-phase power conversion device in which a plurality of single-phase bridges are connected in three phases, and A three-phase power conversion device in which a plurality of three-phase bridges are serially multiplexed may be used.

前述の図２の実施形態の電力変換装置は複数個の単相ブリッジを並列多重化した単相電力変換装置であるが、これを複数の単相ブリッジを三相結線した三相電力変換装置及び三相ブリッジを複数個並列多重化した三相電力変換装置であってもよい。   2 is a single-phase power conversion device in which a plurality of single-phase bridges are multiplexed in parallel, and this is a three-phase power conversion device in which a plurality of single-phase bridges are connected in three phases, and A three-phase power conversion device in which a plurality of three-phase bridges are multiplexed in parallel may be used.

前述の実施形態では、各電力変換器はインバータの場合について説明したが、コンバータの場合であっても前述の実施形態と同様に実施できる。   In the above-described embodiment, the case where each power converter is an inverter has been described.

１…バッテリ、２…交流電力系統又は負荷、３、３１、３２…３Ｎ…半導体電力変換器、４、４１、４２…４Ｎ…電圧指令値発生器、５、５１、５２…５Ｎ…ゲート制御器例えばＰＷＭ制御器、６１、６２…６Ｎ…絶縁変圧器、７…高調波補償制御器、８…高調波成分抽出器、９…高調波補償器、１０、１０１、１０２…１０Ｎ…加算器、１１…電流検出器、１２…電圧検出器、１３、１３１．１３２…１３Ｎ…ゲート信号検出器、１４、１４１、１４２…１４Ｎ…リアクトル。   DESCRIPTION OF SYMBOLS 1 ... Battery, 2 ... AC power system or load, 3, 31, 32 ... 3N ... Semiconductor power converter 4, 41, 42 ... 4N ... Voltage command value generator 5, 51, 52 ... 5N ... Gate controller For example, PWM controller, 61, 62... 6N ... isolation transformer, 7 ... harmonic compensation controller, 8 ... harmonic component extractor, 9 ... harmonic compensator, 10, 101, 102 ... 10N ... adder, 11 ... Current detector, 12 ... Voltage detector, 13, 131.132 ... 13N ... Gate signal detector, 14, 141, 142 ... 14N ... Reactor.

Claims (4)

直流電力系統と交流電力系統の間に接続され、直流電力を交流電力、又は交流電力を直流電力に変換する半導体電力変換器を複数個電気的に接続し、前記各半導体電力変換器毎に、各々設けられる電圧指令値発生器からの電圧指令値に基づき得られるゲート信号を、前記各半導体電力変換器に与えるゲート制御器を備えた半導体電力変換装置において、
前記各電力変換器における交流電流信号又は交流電圧信号の合成値或いは前記各ゲート信号の合成値を検出し、この検出値に含まれる高調波成分を抽出し、この高調波成分を最小値とする共通の高調波補償制御器と、
を具備したことを特徴とする半導体電力変換装置。 Connected between a DC power system and an AC power system, electrically connecting a plurality of semiconductor power converters that convert DC power into AC power, or AC power into DC power, for each of the semiconductor power converters, In a semiconductor power conversion device including a gate controller that supplies a gate signal obtained based on a voltage command value from a voltage command value generator provided to each semiconductor power converter ,
The combined value of the alternating current signal or alternating voltage signal or the combined value of the gate signals in each power converter is detected, the harmonic component included in the detected value is extracted, and the harmonic component is set to the minimum value. A common harmonic compensation controller,
A semiconductor power conversion device comprising: 直流電力系統と交流電力系統の間に接続され、直流電力を交流電力、又は交流電力を直流電力に変換する半導体電力変換器を複数個電気的に直列接続し、前記各半導体電力変換器毎に、各々設けられる電圧指令値発生器からの電圧指令値に基づき得られるゲート信号を、前記各半導体電力変換器に与えるゲート制御器を備えた半導体電力変換装置において、
前記各電力変換器における交流電流信号又は交流電圧信号の合成値或いは前記各ゲート信号の合成値を検出し、この検出値に含まれる高調波成分を抽出し、この高調波成分を最小値とする共通の高調波補償制御器と、
を具備したことを特徴とする半導体電力変換装置。 A plurality of semiconductor power converters connected between a DC power system and an AC power system and converting DC power into AC power or AC power into DC power are electrically connected in series, and each semiconductor power converter is connected to each other. In the semiconductor power conversion device provided with a gate controller for providing each of the semiconductor power converters with a gate signal obtained based on a voltage command value from each voltage command value generator provided ,
The combined value of the alternating current signal or alternating voltage signal or the combined value of the gate signals in each power converter is detected, the harmonic component included in the detected value is extracted, and the harmonic component is set to the minimum value. A common harmonic compensation controller,
A semiconductor power conversion device comprising: 直流電力系統と交流電力系統の間に接続され、直流電力を交流電力、又は交流電力を直流電力に変換する半導体電力変換器を複数個電気的に並列接続し、前記各半導体電力変換器毎に、各々設けられる電圧指令値発生器からの電圧指令値に基づき得られるゲート信号を、前記各半導体電力変換器に与えるゲート制御器を備えた半導体電力変換装置において、
前記各電力変換器における交流電流信号又は交流電圧信号の合成値或いは前記各ゲート信号の合成値を検出し、この検出値に含まれる高調波成分を抽出し、この高調波成分を最小値とする共通の高調波補償制御器と、
を具備したことを特徴とする半導体電力変換装置。 A plurality of semiconductor power converters connected between a DC power system and an AC power system and converting DC power into AC power or AC power into DC power are electrically connected in parallel, and each semiconductor power converter is connected In the semiconductor power conversion device provided with a gate controller for providing each of the semiconductor power converters with a gate signal obtained based on a voltage command value from each voltage command value generator provided ,
The combined value of the alternating current signal or alternating voltage signal or the combined value of the gate signals in each power converter is detected, the harmonic component included in the detected value is extracted, and the harmonic component is set to the minimum value. A common harmonic compensation controller,
A semiconductor power conversion device comprising: 前記共通の高調波補償制御器は、
前記各電力変換器における交流電流信号又は交流電圧信号の合成値或いは前記各ゲート信号の合成値を検出し、この検出値に含まれる高調波成分を抽出する共通の高調波成分抽出器と、
前記高調波成分抽出器で抽出した高調波成分を最小にするための補正用電圧指令値を求める共通の補償器と、
前記電圧指令値発生器からの電圧指令値に、前記共通の補償器で求めた補正用電圧指令値をそれぞれ加算した加算値を前記各ゲート制御器の電圧指令値とする複数の加算器と、
を備えたことを特徴とする請求項１乃至請求項３のいずれか一つに記載の半導体電力変換装置。 The common harmonic compensation controller is:
A common harmonic component extractor for detecting a combined value of the alternating current signal or the alternating voltage signal in each of the power converters or a combined value of the gate signals, and extracting a harmonic component included in the detected value;
A common compensator for obtaining a voltage command value for correction for minimizing the harmonic component extracted by the harmonic component extractor;
The voltage command value from the voltage command value generator, a plurality of adders for an added value obtained by adding said common compensator in obtained the correction voltage command value, respectively and the voltage command value of each gate controllers,
The semiconductor power conversion device according to any one of claims 1 to 3, further comprising:
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