JP5961824B1 - Efg法用育成炉の断熱構造 - Google Patents
Efg法用育成炉の断熱構造 Download PDFInfo
- Publication number
- JP5961824B1 JP5961824B1 JP2015180760A JP2015180760A JP5961824B1 JP 5961824 B1 JP5961824 B1 JP 5961824B1 JP 2015180760 A JP2015180760 A JP 2015180760A JP 2015180760 A JP2015180760 A JP 2015180760A JP 5961824 B1 JP5961824 B1 JP 5961824B1
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- Japan
- Prior art keywords
- heat insulating
- insulating material
- heater
- heat
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000009413 insulation Methods 0.000 title claims description 14
- 239000011810 insulating material Substances 0.000 claims abstract description 69
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 abstract description 19
- 239000010980 sapphire Substances 0.000 abstract description 19
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009395 breeding Methods 0.000 description 2
- 230000001488 breeding effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
2 種結晶
3 マルチサファイアリボン
4 上部断熱材
5 ダイ
6 ヒーター
7 坩堝
8 側面部断熱材
9 底面部断熱材
10 側面部断熱材カバー
11 底面部断熱材カバー
Claims (2)
- EFG法用育成炉内に設けられ、ヒーター外側を覆うヒーター用断熱構造であって、ヒーター側面に配置された側面部断熱材及び底面に配置された底面部断熱材に対し、当該側面部断熱材の上面、側面及び、両断熱材の底部のみを別体の断熱材によって包み、当該側面部断熱材の上面及び側面と、別体の断熱材との間に空隙を挟んだEFG法用断熱構造。
- 前記各断熱材について、ヒーター側面及び底面に配置された断熱材をグラファイト又はカーボンフェルトで、別体の断熱材を成形断熱材によってそれぞれ構成した請求項1記載の断熱構造。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015180760A JP5961824B1 (ja) | 2015-09-14 | 2015-09-14 | Efg法用育成炉の断熱構造 |
PCT/JP2016/076888 WO2017047556A1 (ja) | 2015-09-14 | 2016-09-13 | Efg法用育成炉の断熱構造 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015180760A JP5961824B1 (ja) | 2015-09-14 | 2015-09-14 | Efg法用育成炉の断熱構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5961824B1 true JP5961824B1 (ja) | 2016-08-02 |
JP2017057089A JP2017057089A (ja) | 2017-03-23 |
Family
ID=56550559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015180760A Active JP5961824B1 (ja) | 2015-09-14 | 2015-09-14 | Efg法用育成炉の断熱構造 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5961824B1 (ja) |
WO (1) | WO2017047556A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335081A (en) * | 1979-01-15 | 1982-06-15 | Mobil Tyco Solar Energy Corporation | Crystal growth furnace with trap doors |
JP2001322892A (ja) * | 2000-05-10 | 2001-11-20 | Namiki Precision Jewel Co Ltd | 単結晶材製造方法、シード基板、ダイおよび単結晶材製造装置 |
JP2011057482A (ja) * | 2009-09-08 | 2011-03-24 | Shinshu Univ | サファイア単結晶の製造装置 |
JP2014502952A (ja) * | 2011-01-19 | 2014-02-06 | エルジー シルトロン インコーポレイテッド | 抵抗加熱サファイア単結晶インゴットの成長装置、抵抗加熱サファイア単結晶インゴットの製造方法、サファイア単結晶インゴットおよびサファイアウェハ |
-
2015
- 2015-09-14 JP JP2015180760A patent/JP5961824B1/ja active Active
-
2016
- 2016-09-13 WO PCT/JP2016/076888 patent/WO2017047556A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335081A (en) * | 1979-01-15 | 1982-06-15 | Mobil Tyco Solar Energy Corporation | Crystal growth furnace with trap doors |
JP2001322892A (ja) * | 2000-05-10 | 2001-11-20 | Namiki Precision Jewel Co Ltd | 単結晶材製造方法、シード基板、ダイおよび単結晶材製造装置 |
JP2011057482A (ja) * | 2009-09-08 | 2011-03-24 | Shinshu Univ | サファイア単結晶の製造装置 |
JP2014502952A (ja) * | 2011-01-19 | 2014-02-06 | エルジー シルトロン インコーポレイテッド | 抵抗加熱サファイア単結晶インゴットの成長装置、抵抗加熱サファイア単結晶インゴットの製造方法、サファイア単結晶インゴットおよびサファイアウェハ |
Also Published As
Publication number | Publication date |
---|---|
JP2017057089A (ja) | 2017-03-23 |
WO2017047556A1 (ja) | 2017-03-23 |
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