JP5952519B1 - 磁気抵抗効果素子 - Google Patents
磁気抵抗効果素子 Download PDFInfo
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- JP5952519B1 JP5952519B1 JP2016522821A JP2016522821A JP5952519B1 JP 5952519 B1 JP5952519 B1 JP 5952519B1 JP 2016522821 A JP2016522821 A JP 2016522821A JP 2016522821 A JP2016522821 A JP 2016522821A JP 5952519 B1 JP5952519 B1 JP 5952519B1
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- 230000000694 effects Effects 0.000 title claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 57
- 239000000758 substrate Substances 0.000 description 52
- 230000005415 magnetization Effects 0.000 description 37
- 230000005291 magnetic effect Effects 0.000 description 29
- 229910019236 CoFeB Inorganic materials 0.000 description 27
- 230000008569 process Effects 0.000 description 27
- 238000005259 measurement Methods 0.000 description 23
- 230000008878 coupling Effects 0.000 description 14
- 238000010168 coupling process Methods 0.000 description 14
- 238000005859 coupling reaction Methods 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 230000002265 prevention Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 229910001120 nichrome Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
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- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
図1は、本実施形態に係る成膜方法を行う例示的なMTJ(Magnetic Tunnel Junction:磁気抵抗効果素子)素子4000の構成を示す模式図である。MTJ素子は、例えばMRAM(Magnetic Random Access Memory)、磁気センサ等に用いられる。
第1実施形態に係るMTJ素子4000は、トンネルバリア層4014の下にリファレンス層4013を有する構造(ボトムピン構造)であるが、トンネルバリア層の上にリファレンス層を有する構造(トップピン構造)にも、本発明を適用することができる。図8にトップピン構造の垂直磁化型MTJ素子(p−MTJ素子)の例としてMTJ素子9000を示す。
Claims (1)
- バリア層と、
前記バリア層の一方の表面に形成されたリファレンス層と、
前記バリア層の他方の表面に形成されたフリー層と、
前記リファレンス層の前記バリア層とは逆側に配置されたピン層と、を有し、
前記ピン層は、Pt,Co,Ru,Co,Ptの順番で積層された層、およびNiを含む層を備え、Ni,Co,Pt,Co,Ru,Co,Pt,Co,Niの順番で積層された構造を備えることを特徴とする磁気抵抗効果素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015104341 | 2015-05-22 | ||
JP2015104341 | 2015-05-22 | ||
PCT/JP2016/000158 WO2016189772A1 (ja) | 2015-05-22 | 2016-01-14 | 磁気抵抗効果素子 |
Publications (2)
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JP5952519B1 true JP5952519B1 (ja) | 2016-07-13 |
JPWO2016189772A1 JPWO2016189772A1 (ja) | 2017-06-22 |
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JP2016522821A Active JP5952519B1 (ja) | 2015-05-22 | 2016-01-14 | 磁気抵抗効果素子 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013187409A (ja) * | 2012-03-08 | 2013-09-19 | Renesas Electronics Corp | 磁気メモリセル、磁気メモリセルの製造方法 |
JP2014072392A (ja) * | 2012-09-28 | 2014-04-21 | Sony Corp | 記憶素子、記憶装置、磁気ヘッド |
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- 2016-01-14 JP JP2016522821A patent/JP5952519B1/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013187409A (ja) * | 2012-03-08 | 2013-09-19 | Renesas Electronics Corp | 磁気メモリセル、磁気メモリセルの製造方法 |
JP2014072392A (ja) * | 2012-09-28 | 2014-04-21 | Sony Corp | 記憶素子、記憶装置、磁気ヘッド |
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JPWO2016189772A1 (ja) | 2017-06-22 |
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