JP5925294B2 - 電磁波発生装置 - Google Patents
電磁波発生装置 Download PDFInfo
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- JP5925294B2 JP5925294B2 JP2014504463A JP2014504463A JP5925294B2 JP 5925294 B2 JP5925294 B2 JP 5925294B2 JP 2014504463 A JP2014504463 A JP 2014504463A JP 2014504463 A JP2014504463 A JP 2014504463A JP 5925294 B2 JP5925294 B2 JP 5925294B2
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- 239000000758 substrate Substances 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 3
- -1 GaAs compound Chemical class 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- 239000000969 carrier Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 229910052720 vanadium Inorganic materials 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000001131 transforming effect Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
- H01Q9/26—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole with folded element or elements, the folded parts being spaced apart a small fraction of operating wavelength
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Light Receiving Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
この光伝導基板では、表面近傍におけるV族原子クラスターが、光励起キャリアの捕捉に大きく寄与することを利用して、フェムト秒レーザパルスの照射によってIII−V族化合物半導体層内に発生する光励起キャリアのキャリア寿命を短寿命化している。これにより、残留キャリアによる、テラヘルツ波の検出および発生のS/N比が低下することを防止している。
このため、上記従来の光伝導基板等においては、常にテラヘルツ波の発生および検出に好適な兼用(共用)基板を構成すべく、キャリア寿命を短寿命化(例えば、1psec以下)を図るようにしている。
この点において、本出願人は、発生専用の光伝導基板、或いは検出専用の光伝導基板の存在を肯定し、その開発過程で、発生専用の光伝導基板においては、キャリア寿命の短寿命化が、必ずしもS/N比またはダイナミックレンジの向上に相関しないことを見出した。
この10psec〜20psecのキャリア寿命は、例えばMBE(分子線エピタキシー)装置において、III−V族化合物半導体を低温成長させた後、V族原子クラスターを析出させるべく、分子線を照射した状態で熱処理を行うことで実現される。なお、この場合の電磁波は、数十GHz〜数百THzの電磁波を対象とするものである。
光伝導基板2は、基板11と、基板11上に形成されたバッファ層12と、バッファ層12上に形成された光伝導層13と、を備えている。また、平行伝送線路3は、一対のアンテナ21,21を備えている。なお、バッファ層12は省略してもよい。
Claims (2)
- テラヘルツ波を発生させるための、光伝導基板および前記光伝導基板上に形成された平行伝送線路を備え、
前記光伝導基板は、
基板と、
前記基板上にエピタキシャル成長させたIII−V族化合物半導体から成る光伝導層と、を有し、
前記光伝導層は、光電効果によって生ずるキャリア寿命が、10psec以上、20psec以下であることを特徴とする電磁波発生装置。 - 前記光伝導層は、GaAs化合物半導体層であることを特徴とする請求項1に記載の電磁波発生装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/001823 WO2013136369A1 (ja) | 2012-03-15 | 2012-03-15 | 光伝導基板およびこれを備えた電磁波発生装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013136369A1 JPWO2013136369A1 (ja) | 2015-07-30 |
JP5925294B2 true JP5925294B2 (ja) | 2016-06-01 |
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JP2014504463A Active JP5925294B2 (ja) | 2012-03-15 | 2012-03-15 | 電磁波発生装置 |
Country Status (2)
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JP (1) | JP5925294B2 (ja) |
WO (1) | WO2013136369A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104167656B (zh) * | 2014-06-20 | 2018-01-26 | 上海师范大学 | 一种太赫兹光导天线及其制作方法 |
CN111276588B (zh) * | 2018-12-05 | 2021-09-28 | 光宝光电(常州)有限公司 | 发光封装结构及其制造方法 |
JP2020036037A (ja) * | 2019-11-07 | 2020-03-05 | パイオニア株式会社 | 光伝導素子及び計測装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4095486B2 (ja) * | 2003-04-18 | 2008-06-04 | 浜松ホトニクス株式会社 | テラヘルツ電磁波対応ウェハ、テラヘルツ発生検出デバイス及びそれらの製造方法 |
JP4785392B2 (ja) * | 2004-03-26 | 2011-10-05 | キヤノン株式会社 | テラヘルツ電磁波の発生素子の製造方法 |
JP4708002B2 (ja) * | 2004-11-18 | 2011-06-22 | パナソニック株式会社 | 電磁波発生装置 |
-
2012
- 2012-03-15 JP JP2014504463A patent/JP5925294B2/ja active Active
- 2012-03-15 WO PCT/JP2012/001823 patent/WO2013136369A1/ja active Application Filing
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Publication number | Publication date |
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WO2013136369A1 (ja) | 2013-09-19 |
JPWO2013136369A1 (ja) | 2015-07-30 |
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