JP5912533B2 - 多層構造およびその作製方法 - Google Patents
多層構造およびその作製方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000919 ceramic Substances 0.000 claims description 41
- 238000001465 metallisation Methods 0.000 claims description 24
- 239000011701 zinc Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000007858 starting material Substances 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- 238000005245 sintering Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910003447 praseodymium oxide Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
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- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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Description
(Zn(3−3x)M3xTa(1−y)M’yO8)k(Zn(2−2x)M2xTa(1−y)M’yO6)m(Bi(2−2z)SE2zZn(2/3−2x/3)M2x/3Ta(4/3−4y/3)M’4y/3O7)n
Claims (14)
- モノリシックブロックを形成するよう焼結されており、
多層構造の一つの層はバリスタセラミックを、かつ別の層は誘電体を備えており、
前記層の上面または間にメタライゼーション面が配置され、前記メタライゼーション面は伝導体区域および金属被覆領域を形成するよう構成されており、
バリスタ、および、キャパシタンス、レジスタンスまたはインダクタンスのうちの少なくとも一つのさらなる素子が、前記メタライゼーション面および前記層によって実現され、
前記誘電体は、組成式(Zn(3−3x)M3xTa(1−y)M’yO8)k(Zn(2−2x)M2xTa(1−y)M’yO6)m(Bi(2−2z)SE2zZn(2/3−2x/3)M2x/3Ta(4/3−4y/3)M’4y/3O7)nであり、
前記式中、k+n+m=1が成立しており、かつそれぞれの指標k、n、mは互いに独立して0<k<1、0<n<1および0<m<1に当てはまり、
前記式中、MはNi、Co、Fe、Cu、MgまたはCaを示し、
前記式中、M’はNbまたはSbを示し、
前記式中、SEはLaまたはNdを示し、
前記式中、それぞれの指標x、y、zは互いに独立して0≦x≦0.3、0≦y≦0.5および0≦z≦0.3が成立しており、
前記バリスタセラミックは、添加された酸化亜鉛に基づいていることを特徴とする、セラミックの多層構造。 - 前記酸化亜鉛は、BiおよびSbと一緒に、3〜5atom%の範囲において添加されることを特徴とする、請求項1に記載の多層構造。
- 前記バリスタセラミックは、Ni、CoおよびCrから選択された、0.5atom%までのそれぞれの割合における添加物を含むことを特徴とする、請求項1または2に記載の多層構造。
- 前記メタライゼーション面は、焼結された伝導性ペーストから形成されており、銀およびパラジウムを含有していることを特徴とする、請求項1ないし3のいずれか1項に記載の多層構造。
- 前記多層構造において、前記バリスタセラミックの層および前記誘電体の層は、相互に直接的にもう一方の層の上に配置されることを特徴とする、請求項1ないし4のいずれか1項に記載の多層構造。
- 前記バリスタセラミックまたは前記誘電体の同型の二つの層の間に、前記誘電体または前記バリスタセラミックのそれぞれ異なる層が配置されている、サンドウィッチ構造を有し、
前記サンドウィッチ構造における前記層は、相互に直接的にもう一方の層の上に配置されることを特徴とする、請求項1ないし5のいずれか1項に記載の多層構造。 - 前記バリスタに並んでRC、LC、または、RLC素子も組み込まれており、多様の受動素子が組み込まれていることを特徴とする、請求項1ないし6のいずれか1項に記載の多層構造。
- R、CまたはL素子を備えるRFフィルタ回路が、前記モノリシックブロック内の集積型において形成されており、
保護素子としての前記バリスタは、前記RFフィルタ回路について並列に接続され、アースされていることを特徴とする、請求項7に記載の多層構造。 - 前記モノリシックブロックにおいて、集積LC素子を形成する前記メタライゼーション面の構造が、前記誘電体の層に隣接した片面または両面上において配置され、かつC素子が誘電体として使用されることを特徴とする、請求項1ないし8のいずれか1項に記載の多層構造。
- 前記誘電体は、20〜100の誘電率を有することを特徴とする、請求項1ないし9のいずれか1項に記載の多層構造。
- 請求項1ないし10のいずれか1項に記載の多層構造を作製するための方法であって、
正規組成率において、前記バリスタセラミックのための着手材料を含む第1のグリーンシート、および、前記誘電体のための着手材料を含む第2のグリーンシートを作製し、
前記メタライゼーション面を、焼結可能な伝導性ペーストを用いて前記グリーンシート上の片面または両面に印刷し、
前記第1のグリーンシートおよび前記第2のグリーンシートのそれぞれの少なくとも一つをもう一方の上に配置し、シート積層物を形成するよう前記メタライゼーション面について調整され互いに積層し、
前記シート積層物を一緒に焼結することを特徴とする、作製方法。 - 前記シートが前記シート積層物を形成するよう積層される前に、貫通ビアホールを前記グリーンシートの中へ打ち抜き、伝導性材料で満たすことを特徴とする、請求項11に記載の作製方法。
- 前記第2のグリーンシートは、前記着手材料を望ましい前記正規組成率における金属酸化物の形態で使用して、グラインドにより均一にこれらを混合することによって作製されることを特徴とする、請求項11または12に記載の作製方法。
- 前記グリーンシートの作製の前に、前記着手材料にグラインドを行い、その後焼成し、次いで再度グラインドすることを特徴とする、請求項13に記載の作製方法。
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DE102009008737 | 2009-02-12 | ||
DE102009008737.0 | 2009-02-12 | ||
DE102009014542.7 | 2009-03-24 | ||
DE102009014542A DE102009014542B3 (de) | 2009-02-12 | 2009-03-24 | Mehrschichtbauelement und Verfahren zur Herstellung |
PCT/EP2010/051518 WO2010092027A1 (de) | 2009-02-12 | 2010-02-08 | Keramisches elektronisches mehrschichtbauelement und verfahren zu dessen herstellung |
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JP2012517710A JP2012517710A (ja) | 2012-08-02 |
JP5912533B2 true JP5912533B2 (ja) | 2016-04-27 |
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US (1) | US8970324B2 (ja) |
EP (1) | EP2396795A1 (ja) |
JP (1) | JP5912533B2 (ja) |
CN (1) | CN102318017B (ja) |
DE (1) | DE102009014542B3 (ja) |
TW (1) | TWI454378B (ja) |
WO (1) | WO2010092027A1 (ja) |
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DE102014101092A1 (de) * | 2014-01-29 | 2015-07-30 | Epcos Ag | Chip mit Schutzfunktion und Verfahren zur Herstellung |
DE102015120640A1 (de) * | 2015-11-27 | 2017-06-01 | Epcos Ag | Vielschichtbauelement und Verfahren zur Herstellung eines Vielschichtbauelements |
DE102016107497B4 (de) * | 2016-03-24 | 2020-01-30 | Tdk Electronics Ag | Multi-LED System und Verfahren zu seiner Herstellung |
DE102016107495B4 (de) * | 2016-04-22 | 2022-04-14 | Tdk Electronics Ag | Vielschicht-Trägersystem, Verfahren zur Herstellung eines Vielschicht-Trägersystems und Verwendung eines Vielschicht-Trägersystems |
JP6249260B1 (ja) * | 2016-11-22 | 2017-12-20 | ナガセケムテックス株式会社 | レジスト剥離液及びレジストの剥離方法 |
DE102017108384A1 (de) * | 2017-04-20 | 2018-10-25 | Epcos Ag | Vielschichtbauelement und Verfahren zur Herstellung eines Vielschichtbauelements |
CN114566337B (zh) * | 2022-01-23 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | 一种热测试芯片 |
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JPH01183803A (ja) * | 1988-01-19 | 1989-07-21 | Murata Mfg Co Ltd | 複合電子部品 |
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DE102006024231B4 (de) * | 2006-05-23 | 2010-01-28 | Epcos Ag | Keramisches Material, gesinterte Keramik, Verfahren zur Herstellung und Verwendung der Keramik |
TW200927697A (en) * | 2007-12-26 | 2009-07-01 | Delta Electronics Inc | Slurry and method for manufacturing dielectric ceramic component with high frequency and glass-ceramic composition thereof |
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US8970324B2 (en) | 2015-03-03 |
CN102318017A (zh) | 2012-01-11 |
TW201040020A (en) | 2010-11-16 |
EP2396795A1 (de) | 2011-12-21 |
CN102318017B (zh) | 2013-05-29 |
TWI454378B (zh) | 2014-10-01 |
JP2012517710A (ja) | 2012-08-02 |
WO2010092027A1 (de) | 2010-08-19 |
DE102009014542B3 (de) | 2010-12-02 |
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