JP5907633B2 - 非平面チップの組立品 - Google Patents
非平面チップの組立品 Download PDFInfo
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- JP5907633B2 JP5907633B2 JP2014510299A JP2014510299A JP5907633B2 JP 5907633 B2 JP5907633 B2 JP 5907633B2 JP 2014510299 A JP2014510299 A JP 2014510299A JP 2014510299 A JP2014510299 A JP 2014510299A JP 5907633 B2 JP5907633 B2 JP 5907633B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F2/00—Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
- A61F2/02—Prostheses implantable into the body
- A61F2/14—Eye parts, e.g. lenses, corneal implants; Implanting instruments specially adapted therefor; Artificial eyes
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/02—Details
- A61N1/04—Electrodes
- A61N1/05—Electrodes for implantation or insertion into the body, e.g. heart electrode
- A61N1/0526—Head electrodes
- A61N1/0543—Retinal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Veterinary Medicine (AREA)
- Public Health (AREA)
- Heart & Thoracic Surgery (AREA)
- Biomedical Technology (AREA)
- Ophthalmology & Optometry (AREA)
- Cardiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Radiology & Medical Imaging (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Electromagnetism (AREA)
- Oral & Maxillofacial Surgery (AREA)
- Transplantation (AREA)
- Vascular Medicine (AREA)
- Micromachines (AREA)
- Prostheses (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
網膜チップ組立処理又は(集積)半導体チップの非平面(例、準球状)曲面パッチ及び組立方法が、本明細書に記載される。以下の明細書中、多くの具体的な詳細が本発明の実施形態の説明を通して記載され提供される。しかし、これらの具体的な詳細が記載されていなくても本発明の実施形態を実施し得ることは、当業者には明らかであろう。その他の事実としては、周知の構成要素、構造及び技術は、本明細書を理解し難くしないため、詳細には示されない。
Claims (17)
- 非平面(non−planner)集積回路デバイスであって、
所望の変形に湾曲された可撓性構造であって、複数の接触領域を備え、且つ処理操作を行うための、前記可撓性構造に組み込む回路を包括し、;そのうち、前記可撓性構造に狭開口部を形成するために用いる一つ或いはそれ以上の溝穴をさらに包括し、前記溝穴によって、前記狭開口部と交差する前記可撓性構造の面内応力を減少させることで、前記所望の変形に湾曲させ;且つ
前記接触領域を介して前記可撓性構造に結合し、拘束を保持して前記可撓性構造を湾曲させたままにする、少なくとも1つの固定構造、
を備える、デバイス。 - 前記固定構造が、前記所望の変形に応じて湾曲され、前記固定構造が、前記可撓性構造と結合して相互の拘束を保持し前記固定構造を湾曲させたままにする、請求項1に記載のデバイス。
- 前記可撓性構造は、中心を有する面を備え、前記溝穴は、前記面の前記中心から外側の方向に延びて配置され、前記湾曲は、三次元様式で前記中心に向かって内側に向けられる、請求項2に記載のデバイス。
- 前記所望の変形が、準球状の形状と実質的に合致する、請求項3に記載のデバイス。
- 前記固定構造の少なくとも1つが、前記溝穴のうちの1つに近接する少なくとも2つの前記接触領域を介して、前記溝穴のうちの1つを跨ぐように、前記可撓性構造と結合し、前記少なくとも1つの固定構造によって、前記拘束の一部が保持されて、前記1つの溝穴の開口部が広がらないようにする、請求項3に記載のデバイス。
- 前記少なくとも2つの前記接触領域が、前記1つの溝穴の2つの側にそれぞれ対応し合う、請求項5に記載のデバイス。
- 前記1つの固定構造が、前記可撓性構造の前記所望の変形に合致する非平面形状に曲げられた高分子材料を含む、請求項5に記載のデバイス。
- 前記接触領域が、導電性材料を含む結合パッドと、前記結合パッドを介して前記可撓性構造と結合する前記固定構造を備える、請求項1に記載のデバイス。
- 前記可撓性構造と前記固定構造との少なくとも一部が、前記デバイス中の埋戻し材を介して分離され、前記埋戻し材が、前記可撓性構造と前記固定構造との間で熱を放散することが可能な熱伝導性材料を含む、請求項8に記載のデバイス。
- 前記結合パッドが、腐食から前記導電性材料を保護するための少なくとも1つの不動態化層で不動態化される、請求項8に記載のデバイス。
- 前記デバイスが、ヒトの眼の中に移植可能で光の視覚認知を可能にし、前記所望の変形によって、ヒトの眼球の形状と合致する前記デバイスの前記移植を可能にする、請求項10に記載のデバイス。
- 前記可撓性構造と前記固定構造が、実質的に透明であり、光が前記デバイスを通過する、請求項11に記載のデバイス。
- 前記可撓性構造は、画素ユニットの配列を備え、画素ユニットの各々は、光を感知するセンサー、前記認知のために電極の対象となる神経細胞への刺激を伝達する電極、及び前記光からの前記刺激を誘導して前記電極を駆動させる処理回路を備える、請求項11に記載のデバイス。
- 前記固定構造は、更なる処理操作を行うことができ、前記結合パッドによって、前記可撓性構造と前記固定構造との間を互いに連絡させて、前記処理操作と前記更なる処理操作を連動させることが可能である、請求項8に記載のデバイス。
- 前記連絡が、前記固定構造を介して前記可撓性構造へ溝穴を跨いで情報を中継することを含む、請求項14に記載のデバイス。
- 前記デバイスが、三次元形状を有し、前記所望の変形が、前記三次元形状の一部と合致し、前記デバイスが、
更なる処理操作が可能な少なくとも1つの分離可撓性構造、
を更に備え、
前記分離可撓性構造は、前記三次元形状に合致するよう湾曲され、前記可撓性構造の面と前記分離可撓性構造の分離面とを前記三次元形状内で互いに対向させて、前記可撓性構造と前記分離可撓性構造とが、前記デバイス内で前記面と前記分離面とを跨いで互いに直接連絡することが可能である、請求項1に記載のデバイス。 - 前記直接連絡することが、無線で行われる、請求項16に記載のデバイス。
Applications Claiming Priority (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/102,596 US20120109255A1 (en) | 2010-10-27 | 2011-05-06 | Retina Stimulation Apparatus and Manufacturing Method Thereof |
US13/102,596 | 2011-05-06 | ||
US13/282,423 | 2011-10-26 | ||
US13/282,423 US9114004B2 (en) | 2010-10-27 | 2011-10-26 | Flexible artificial retina devices |
US13/282,422 | 2011-10-26 | ||
US13/282,422 US8530265B2 (en) | 2010-10-27 | 2011-10-26 | Method of fabricating flexible artificial retina devices |
US201161553919P | 2011-10-31 | 2011-10-31 | |
US61/553,919 | 2011-10-31 | ||
US13/300,547 | 2011-11-18 | ||
US13/300,548 | 2011-11-18 | ||
US13/300,548 US9155881B2 (en) | 2011-05-06 | 2011-11-18 | Non-planar chip assembly |
US13/300,547 US8613135B2 (en) | 2011-05-06 | 2011-11-18 | Method for non-planar chip assembly |
PCT/US2011/064014 WO2012154211A1 (en) | 2011-05-06 | 2011-12-08 | Non-planar chip assembly |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016051907A Division JP6307543B2 (ja) | 2011-05-06 | 2016-03-16 | 非平面集積回路デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014527279A JP2014527279A (ja) | 2014-10-09 |
JP5907633B2 true JP5907633B2 (ja) | 2016-04-26 |
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CN106030781B (zh) | 2013-12-19 | 2019-06-14 | 英特尔公司 | 柔软包裹的集成电路管芯 |
US10373995B2 (en) * | 2014-09-19 | 2019-08-06 | Microsoft Technology Licensing, Llc | Image sensor bending using tension |
CN106344264B (zh) * | 2015-07-21 | 2019-01-22 | 林伯刚 | 具抑制交互干扰的神经感测装置 |
JP7216623B2 (ja) | 2019-08-08 | 2023-02-01 | 株式会社日立製作所 | 半導体チップ |
NL2024940B1 (en) * | 2020-02-19 | 2021-10-06 | Atlas Technologies Holding Bv | Crystalline semiconductor chip that can be curved in two directions |
CN111450411B (zh) * | 2020-04-09 | 2023-07-25 | 国家纳米科学中心 | 一种复合神经电极及其制备方法 |
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US3324608A (en) * | 1965-01-27 | 1967-06-13 | Thompson Proc Co Inc | Facing assembly for lens grinding tools and the like |
US4288233A (en) * | 1978-01-25 | 1981-09-08 | Wiand Ronald C | Abrasive pads for lens lapping tools |
DE4415132C2 (de) * | 1994-04-29 | 1997-03-20 | Siemens Ag | Verfahren zur formgebenden Bearbeitung von dünnen Wafern und Solarzellen aus kristallinem Silizium |
JPH09102514A (ja) * | 1995-10-05 | 1997-04-15 | Nippon Telegr & Teleph Corp <Ntt> | バンプボンディング方法およびバンプボンディング構造 |
EP2275166A3 (en) * | 1999-03-24 | 2014-05-21 | Second Sight Medical Products, Inc. | Visual prosthesis |
JP3580749B2 (ja) * | 2000-02-18 | 2004-10-27 | シャープ株式会社 | 粒状半導体装置の実装方法 |
US6647297B2 (en) * | 2000-08-09 | 2003-11-11 | The United States Of America As Represented By The Secretary Of The Navy | Permanent retinal implant device |
JP2003257895A (ja) * | 2002-02-28 | 2003-09-12 | Mitsubishi Electric Corp | 半導体チップを搭載したウェハおよびその製造方法 |
JP4307021B2 (ja) * | 2002-06-28 | 2009-08-05 | キヤノン株式会社 | 光学センサーユニット、光学センサーアレイ及び光学センサーの駆動方法 |
KR100630588B1 (ko) * | 2002-08-09 | 2006-10-04 | 후지쯔 가부시끼가이샤 | 반도체 장치 및 그 제조 방법 |
FR2848337B1 (fr) * | 2002-12-09 | 2005-09-09 | Commissariat Energie Atomique | Procede de realisation d'une structure complexe par assemblage de structures contraintes |
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EP2705536A1 (en) | 2014-03-12 |
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