JP5905475B2 - 接続要素を有する太陽電池モジュール - Google Patents
接続要素を有する太陽電池モジュール Download PDFInfo
- Publication number
- JP5905475B2 JP5905475B2 JP2013534345A JP2013534345A JP5905475B2 JP 5905475 B2 JP5905475 B2 JP 5905475B2 JP 2013534345 A JP2013534345 A JP 2013534345A JP 2013534345 A JP2013534345 A JP 2013534345A JP 5905475 B2 JP5905475 B2 JP 5905475B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- cell module
- substrate
- layer
- cover glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 claims description 244
- 239000011888 foil Substances 0.000 claims description 152
- 239000000758 substrate Substances 0.000 claims description 143
- 239000004020 conductor Substances 0.000 claims description 138
- 239000006059 cover glass Substances 0.000 claims description 86
- 239000010409 thin film Substances 0.000 claims description 44
- 238000010521 absorption reaction Methods 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000000853 adhesive Substances 0.000 claims description 22
- 230000001070 adhesive effect Effects 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 14
- -1 titanium nitride compound Chemical class 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229920002367 Polyisobutene Polymers 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229920002635 polyurethane Polymers 0.000 claims description 10
- 239000004814 polyurethane Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 9
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 5
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 5
- 229920000728 polyester Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000012815 thermoplastic material Substances 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims 1
- 239000005977 Ethylene Substances 0.000 claims 1
- 229920003023 plastic Polymers 0.000 description 33
- 239000004033 plastic Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 26
- 238000009413 insulation Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000004026 adhesive bonding Methods 0.000 description 8
- 238000005304 joining Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 229920001169 thermoplastic Polymers 0.000 description 5
- 239000004416 thermosoftening plastic Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005923 long-lasting effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920002943 EPDM rubber Polymers 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical class [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000011074 autoclave method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- BFMKFCLXZSUVPI-UHFFFAOYSA-N ethyl but-3-enoate Chemical compound CCOC(=O)CC=C BFMKFCLXZSUVPI-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
(2) カバーガラス
(3) 後面電極層
(4) 光電活性吸収層
(5) 中間層、熱可塑性の中間層
(6),(6’) 箔導体
(6.1),(6.1’) (6)の導電層
(6.2),(6,2’) (6)の電気絶縁性の箔
(7) 接続点
(8),(8’) 接続ハウジング
(9),(9’) 接触要素、ばね接触要素、フィード線
(10) (6)と(9)との間の電線路の接続
(11),(11’) バスバー
(12),(12’) (1)の側縁
(13),(13’) (2)の側縁
(14) 縁部シール
(15) (6)と(3)との間の電線路の接続
(16) (6)と(11)との間の電線路の接続
(17),(17’) (6)の保護層
(18) 封止材
(19) (11)と(3)との間の電線路の接続
(20) 太陽電池モジュール、薄膜太陽電池モジュール
(20.1),(20.2) 太陽電池セル
(21) バッファ層
(22) 前面電極層
(23) 半導体層
(24.1),(24.2),(24.3) 分割
(25) (3)の領域
(26),(26’) 貫通穴
(27) (11)と(22)との間の電線路の接続
(28) 保護要素
(29) 空洞
I (2)の前面
II (2)の後面
III (1)の前面
IV (1)の後面
A−A’ 切断線
B−B’ 切断線
C−C’ 切断線
D−D’ 切断線
E−E’ 切断線
R アンダーカット
Claims (22)
- 接続要素を有する太陽電池モジュールであって、
a)互いに重ねて配置された基板(1)と後面電極層(3)と光電活性吸収層(4)とカバーガラス(2)と
を少なくとも備えており、
光電活性吸収層(4)が、後面電極層(3)へと導電可能かつ部分的に接続されるとともに、後面電極層(3)から遠ざかる方を向いた面に前面電極層(22)を有しており、基板(1)が、前面(III)において少なくとも1つの中間層(5)によってカバーガラス(2)の後面(II)へと積層的に接続されており、
さらに
b)1つの導電層(6.1)と1つの電気絶縁性の箔(6.2)とを少なくとも備えており、後面電極層(3)および/または前面電極層(22)へと導電可能に接続されるとともに、電気接触を形成するための接続点(7)を有している少なくとも1つの箔導体(6)と、
c)接触要素(9)と箔導体の接続点(7)との間の少なくとも1つの電線路の接続(10)を有している少なくとも1つの接続ハウジング(8)と
を少なくとも備えており、
箔導体(6)が基板(1)の側縁(12)の周囲に配置され、箔(6)および接続ハウジング(8)が基板(1)の後面(IV)へと取り付けられており、
基板(1)が、カバーガラス(2)に対して、0.1mm〜20mmのアンダーカットRを有しており、箔導体(6)は、カバーガラス(2)を越えて突き出すことなく、アンダーカットされた基板(1)の側縁(12)を巡って延びている、前記太陽電池モジュール。 - 基板(1)が、カバーガラス(2)に対して、1mm〜10mmのアンダーカットRを有している、請求項1に記載の太陽電池モジュール。
- 基板(1)が、前面(III)に後面電極層(3)を有している、請求項1または2に記載の太陽電池モジュール。
- カバーガラス(2)が、後面(II)に光電活性吸収層(4)を有している、請求項1または2に記載の太陽電池モジュール。
- 箔導体(6)が、バスバー(11)を介して後面電極層(3)および/または前面電極層(22)へと接続されている、請求項1〜4のいずれか一項に記載の太陽電池モジュール。
- 箔導体(6)および/またはバスバー(11)が、金属を含んでいる、請求項5に記載の太陽電池モジュール。
- 箔導体(6)および/またはバスバー(11)が、アルミニウム、銀、または銅を含んでいる、請求項6に記載の太陽電池モジュール。
- 後面電極層(3)が、金属を含んでおり、前面電極層(22)が、n伝導型の半導体を含んでいる、請求項1〜7のいずれか一項に記載の太陽電池モジュール。
- 後面電極層(3)が、モリブデン、チッ化チタン化合物、またはチッ化タンタル化合物を含んでおり、前面電極層(22)が、アルミニウムがドープされた酸化亜鉛または酸化インジウムすずを含んでいる、請求項8に記載の太陽電池モジュール。
- 光電活性吸収層(4)が、非晶質、微結晶、または多結晶のシリコン、テルル化カドミウム(CdTe)、ガリウムヒ素(GaAs)、または銅インジウム(ガリウム)硫黄/セレン(CI(G)S)を含んでいる、請求項1〜9のいずれか一項に記載の太陽電池モジュール。
- 基板(1)および/またはカバーガラス(2)が、ガラスを含んでおり、さらには/あるいは中間層(4)が、熱可塑性材料を含んでいる、請求項1〜10のいずれか一項に記載の太陽電池モジュール。
- 基板(1)および/またはカバーガラス(2)が、1.5mm〜10mmの厚さを有するガラスを含んでおり、さらには/あるいは中間層(4)が、0.3mm〜0.9mmの厚さを有するポリビニルブチラールまたはエチレン酢酸ビニルを含んでいる、請求項11に記載の太陽電池モジュール。
- 基板(1)とカバーガラス(2)との間のすき間が、縁部シール(14)によって封止されている、請求項1〜12のいずれか一項に記載の太陽電池モジュール。
- 基板(1)とカバーガラス(2)との間のすき間が、アクリル系、ポリウレタン系、またはポリイソブチレン系の接着剤によって封止されている、請求項13に記載の太陽電池モジュール。
- 箔導体(6)が、基板(1)と中間層(5)とカバーガラス(2)とからなる複合体の外側に保護層(17)を少なくとも部分的に有している、請求項1〜14のいずれか一項に記載の太陽電池モジュール。
- 箔導体(6)が、基板(1)と中間層(5)とカバーガラス(2)とからなる複合体の外側に、ポリアクリル酸、ポリウレタン、ポリイソブチレン、ポリイミド、ポリエステル、ポリエチレン、ポリテトラフルオロエチレン、ポリフッ化ビニル、ポリビニルブチラール、ポリエチレンナフタレート、エチレン酢酸ビニル、シリコン、またはこれらの化合物を含む保護層(17)を少なくとも部分的に有している、請求項15に記載の太陽電池モジュール。
- 接続ハウジング(8)の内部が、封止手段(18)によって封止されている、請求項1〜16のいずれか一項に記載の太陽電池モジュール。
- 接続ハウジング(8)の内部が、アクリル系、ポリウレタン系、またはポリイソブチレン系の接着剤によって封止されている、請求項17に記載の太陽電池モジュール。
- 電線路の接続(10、15、16および/または19)が、はんだ付け、溶接、超音波接合、クランプ、または接着剤による接続を有している、請求項1〜18のいずれか一項に記載の太陽電池モジュール。
- 基板(1)の後面(IV)に位置する少なくとも2つの箔導体(6、6’)が、接続ハウジング(8)において少なくとも2つの接触要素(9、9’)へと導電可能に接続されている、請求項1〜19のいずれか一項に記載の太陽電池モジュール。
- 請求項1〜20のいずれか一項に記載の接続要素の、太陽電池モジュールにおける使用。
- 太陽電池モジュールが薄膜太陽電池モジュールである、請求項21に記載の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10188687 | 2010-10-25 | ||
EP10188687.7 | 2010-10-25 | ||
PCT/EP2011/068524 WO2012055808A2 (de) | 2010-10-25 | 2011-10-24 | Solarmodul mit anschlusselement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013540366A JP2013540366A (ja) | 2013-10-31 |
JP5905475B2 true JP5905475B2 (ja) | 2016-04-20 |
Family
ID=43754868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013534345A Expired - Fee Related JP5905475B2 (ja) | 2010-10-25 | 2011-10-24 | 接続要素を有する太陽電池モジュール |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130319518A1 (ja) |
EP (1) | EP2633558A2 (ja) |
JP (1) | JP5905475B2 (ja) |
KR (1) | KR101590685B1 (ja) |
CN (1) | CN103155157B (ja) |
EA (1) | EA201390614A1 (ja) |
WO (1) | WO2012055808A2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2685507B1 (de) | 2012-07-09 | 2019-11-13 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Solarmodul mit Anschlussanordnungen für elektrischen Außenanschluss |
JP2014207344A (ja) * | 2013-04-15 | 2014-10-30 | 東芝三菱電機産業システム株式会社 | 太陽電池の製造方法 |
US20160118932A1 (en) * | 2013-07-19 | 2016-04-28 | Dow Global Technologies Llc | Stowage system for a connector of a photovoltaic component |
US9748412B2 (en) | 2015-06-01 | 2017-08-29 | International Business Machines Corporation | Highly responsive III-V photodetectors using ZnO:Al as N-type emitter |
WO2017156529A1 (en) * | 2016-03-11 | 2017-09-14 | Flex-Cable | Bendable shielded bus bar |
JP7047078B2 (ja) | 2017-09-29 | 2022-04-04 | (シーエヌビーエム)ボンブー デザイン アンド リサーチ インスティテュート フォー グラス インダストリー カンパニー,リミティド | 半透明薄膜ソーラーモジュール |
CN111316450A (zh) * | 2017-09-29 | 2020-06-19 | 中建材蚌埠玻璃工业设计研究院有限公司 | 半透明薄膜太阳能模块 |
EP3698408A4 (en) | 2017-09-29 | 2021-08-11 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | SEMI-TRANSPARENT THIN-LAYER SOLAR MODULE |
CN109830561B (zh) * | 2019-02-20 | 2021-09-03 | 成都中建材光电材料有限公司 | 一种碲化镉薄膜太阳能电池组件及其制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6612091B1 (en) * | 1998-12-16 | 2003-09-02 | Michael Glover | Architectural building panel |
JP2001168368A (ja) * | 1999-12-09 | 2001-06-22 | Kanegafuchi Chem Ind Co Ltd | 端子ボックス |
JP2001291881A (ja) * | 2000-01-31 | 2001-10-19 | Sanyo Electric Co Ltd | 太陽電池モジュール |
WO2002005352A2 (en) * | 2000-07-06 | 2002-01-17 | Bp Corporation North America Inc. | Partially transparent photovoltaic modules |
DE10050614C1 (de) | 2000-10-12 | 2002-02-07 | Dorma Gmbh & Co Kg | Solarmodul |
JP2004146435A (ja) * | 2002-10-22 | 2004-05-20 | Matsushita Ecology Systems Co Ltd | 太陽電池モジュール |
CN100521251C (zh) * | 2004-05-25 | 2009-07-29 | 木谷电器株式会社 | 太阳能电池组件用端子盒 |
DE102005026132A1 (de) * | 2005-06-01 | 2006-12-28 | Sulfurcell Solartechnik Gmbh | Verfahren zur Führung von Kontaktbändern bei Solarmodulen und Solarmodul |
DE102005025632B4 (de) | 2005-06-03 | 2015-09-17 | Te Connectivity Germany Gmbh | Verbindungsvorrichtung für den Anschluss elektrischer Folienleiter |
JP2007012976A (ja) * | 2005-07-01 | 2007-01-18 | Honda Motor Co Ltd | 太陽電池モジュール |
JP2007129015A (ja) * | 2005-11-02 | 2007-05-24 | Dainippon Printing Co Ltd | 太陽電池モジュールおよび太陽電池モジュール用裏面保護シート |
US20090114261A1 (en) * | 2007-08-29 | 2009-05-07 | Robert Stancel | Edge Mountable Electrical Connection Assembly |
DE202008006120U1 (de) * | 2008-05-03 | 2008-07-24 | Lumberg Connect Gmbh | Anschlussdose zur Anordnung auf einem Modul |
WO2010014941A1 (en) * | 2008-07-31 | 2010-02-04 | Daystar Technologies, Inc. | Solar modules, solar module junction boxes, and methods for mounting junction boxes to solar modules |
JP5031698B2 (ja) * | 2008-08-28 | 2012-09-19 | 昭和シェル石油株式会社 | 太陽電池モジュール |
EP2200097A1 (en) | 2008-12-16 | 2010-06-23 | Saint-Gobain Glass France S.A. | Method of manufacturing a photovoltaic device and system for patterning an object |
-
2011
- 2011-10-24 WO PCT/EP2011/068524 patent/WO2012055808A2/de active Application Filing
- 2011-10-24 EA EA201390614A patent/EA201390614A1/ru unknown
- 2011-10-24 US US13/878,174 patent/US20130319518A1/en not_active Abandoned
- 2011-10-24 EP EP11788780.2A patent/EP2633558A2/de not_active Withdrawn
- 2011-10-24 JP JP2013534345A patent/JP5905475B2/ja not_active Expired - Fee Related
- 2011-10-24 KR KR1020137013319A patent/KR101590685B1/ko not_active IP Right Cessation
- 2011-10-24 CN CN201180051538.XA patent/CN103155157B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101590685B1 (ko) | 2016-02-01 |
EA201390614A1 (ru) | 2013-08-30 |
WO2012055808A3 (de) | 2012-07-19 |
CN103155157A (zh) | 2013-06-12 |
JP2013540366A (ja) | 2013-10-31 |
CN103155157B (zh) | 2016-06-29 |
EP2633558A2 (de) | 2013-09-04 |
WO2012055808A2 (de) | 2012-05-03 |
US20130319518A1 (en) | 2013-12-05 |
KR20130111573A (ko) | 2013-10-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5905475B2 (ja) | 接続要素を有する太陽電池モジュール | |
JP5323250B2 (ja) | 太陽電池モジュールおよびその製造方法 | |
EP2600419B1 (en) | Solar cell module | |
US8461450B2 (en) | Solar cell module and manufacturing method of solar cell module | |
WO2011024993A1 (ja) | 太陽電池モジュール | |
JP5641728B2 (ja) | 薄膜型太陽電池モジュール及び薄膜型太陽電池モジュールの製造方法 | |
WO2011024991A1 (ja) | 太陽電池モジュール | |
US20120090680A1 (en) | Solar cell module and method for manufacturing solar cell module | |
WO2011148930A1 (ja) | 太陽電池モジュール及びその製造方法 | |
US20120152329A1 (en) | Solar cell module | |
TW200845406A (en) | Solar cell module | |
KR101645107B1 (ko) | 연결 소켓을 갖춘 태양광 모듈 및 그 제조 방법 | |
JP5342150B2 (ja) | 太陽電池モジュール | |
KR101550927B1 (ko) | 태양전지 및 이의 제조방법 | |
KR20140066238A (ko) | 리본 케이블을 구비한 태양광 모듈 및 그의 제조 방법 | |
US20140202528A1 (en) | Thin film solar cell and method of manufacturing the same | |
JP2004079823A (ja) | 封止構造及びその封止構造を用いた太陽電池モジュール及び封止方法及び太陽電池モジュールの封止方法 | |
US20120024339A1 (en) | Photovoltaic Module Including Transparent Sheet With Channel | |
EP3534409A1 (en) | Solar cell module | |
CN219937055U (zh) | 光伏组件 | |
JP5342151B2 (ja) | 太陽電池モジュール | |
WO2014119441A1 (ja) | 光電変換装置 | |
JP2015070009A (ja) | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130802 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140218 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140219 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140512 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140519 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140815 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140909 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141203 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141210 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150306 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150714 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151008 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160113 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160216 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160316 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5905475 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |