JP5892762B2 - 弾性波デバイス - Google Patents
弾性波デバイス Download PDFInfo
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- JP5892762B2 JP5892762B2 JP2011225108A JP2011225108A JP5892762B2 JP 5892762 B2 JP5892762 B2 JP 5892762B2 JP 2011225108 A JP2011225108 A JP 2011225108A JP 2011225108 A JP2011225108 A JP 2011225108A JP 5892762 B2 JP5892762 B2 JP 5892762B2
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- Prior art keywords
- silicon oxide
- film
- reflectance
- oxide film
- doped
- Prior art date
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 59
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 57
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical group CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 146
- 229910020177 SiOF Inorganic materials 0.000 description 44
- 239000010409 thin film Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000005259 measurement Methods 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 230000003595 spectral effect Effects 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000985 reflectance spectrum Methods 0.000 description 9
- 229910018557 Si O Inorganic materials 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02842—Means for compensation or elimination of undesirable effects of reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
12 櫛型電極
14 反射器
16 SiOF膜
18 誘電体
50 シリコン基板
52 薄膜
60 基板
62 薄膜
70 圧電基板
72 櫛型電極
74 反射器
76 SiOF膜
Claims (4)
- タンタル酸リチウム基板又はニオブ酸リチウム基板である基板上に設けられた弾性波を励振する櫛型電極と、
前記櫛型電極を覆って設けられた、フッ素、塩素、炭素、窒素、リン、及び硫黄の少なくとも1つの元素がドープされた酸化シリコン膜と、を備え、
前記元素がドープされた酸化シリコン膜の上面に光を斜め上方から入射させたときの前記光の波長が230nm〜250nmの範囲における反射率の極大値を、前記基板の上面に前記極大値での波長の光を前記元素がドープされた酸化シリコン膜の上面に前記光を入射させたときと同じ角度で前記元素がドープされた酸化シリコン膜を介さずに直接入射させたときの反射率で規格化した規格化反射率が、0.96以上であることを特徴とする弾性波デバイス。 - 前記基板は、タンタル酸リチウム基板であり、
前記元素がドープされた酸化シリコン膜は、フッ素がドープされた酸化シリコン膜であることを特徴とする請求項1記載の弾性波デバイス。 - 前記元素がドープされた酸化シリコン膜は、2種類以上の元素がドープされていることを特徴とする請求項1記載の弾性波デバイス。
- 前記元素がドープされた酸化シリコン膜上に、前記元素がドープされた酸化シリコン膜よりも音速の速い誘電体を備えることを特徴とする請求項1から3のいずれか一項記載の弾性波デバイス。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011225108A JP5892762B2 (ja) | 2011-10-12 | 2011-10-12 | 弾性波デバイス |
US13/610,384 US9160300B2 (en) | 2011-10-12 | 2012-09-11 | Acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011225108A JP5892762B2 (ja) | 2011-10-12 | 2011-10-12 | 弾性波デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013085189A JP2013085189A (ja) | 2013-05-09 |
JP5892762B2 true JP5892762B2 (ja) | 2016-03-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011225108A Active JP5892762B2 (ja) | 2011-10-12 | 2011-10-12 | 弾性波デバイス |
Country Status (2)
Country | Link |
---|---|
US (1) | US9160300B2 (ja) |
JP (1) | JP5892762B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019068309A (ja) * | 2017-10-02 | 2019-04-25 | 太陽誘電株式会社 | 弾性波デバイス、フィルタおよびマルチプレクサ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3934742B2 (ja) | 1997-06-17 | 2007-06-20 | ソニー株式会社 | 反射防止膜 |
JP2001345667A (ja) * | 2000-05-30 | 2001-12-14 | Kyocera Corp | 弾性表面波素子 |
JP2005260296A (ja) * | 2004-03-09 | 2005-09-22 | Alps Electric Co Ltd | 弾性表面波素子 |
JP2006279609A (ja) * | 2005-03-29 | 2006-10-12 | Fujitsu Media Device Kk | 弾性境界波素子、共振子およびラダー型フィルタ |
WO2007094368A1 (ja) * | 2006-02-16 | 2007-08-23 | Matsushita Electric Industrial Co., Ltd. | 弾性表面波デバイス、およびこれを用いた弾性表面波フィルタとアンテナ共用器、並びにこれを用いた電子機器 |
JP4692629B2 (ja) * | 2006-05-30 | 2011-06-01 | 株式会社村田製作所 | 弾性波装置 |
JP4917396B2 (ja) * | 2006-09-25 | 2012-04-18 | 太陽誘電株式会社 | フィルタおよび分波器 |
US20080111237A1 (en) * | 2006-11-14 | 2008-05-15 | Texas Instruments Incorporated | Semiconductor device manufactured using an electrochemical deposition process for copper interconnects |
-
2011
- 2011-10-12 JP JP2011225108A patent/JP5892762B2/ja active Active
-
2012
- 2012-09-11 US US13/610,384 patent/US9160300B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9160300B2 (en) | 2015-10-13 |
US20130093537A1 (en) | 2013-04-18 |
JP2013085189A (ja) | 2013-05-09 |
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