JP5889212B2 - 非接触で光変換体の特性を決定するための方法 - Google Patents
非接触で光変換体の特性を決定するための方法 Download PDFInfo
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- JP5889212B2 JP5889212B2 JP2012551670A JP2012551670A JP5889212B2 JP 5889212 B2 JP5889212 B2 JP 5889212B2 JP 2012551670 A JP2012551670 A JP 2012551670A JP 2012551670 A JP2012551670 A JP 2012551670A JP 5889212 B2 JP5889212 B2 JP 5889212B2
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- 238000000034 method Methods 0.000 title claims description 42
- 239000000463 material Substances 0.000 claims description 155
- 238000005424 photoluminescence Methods 0.000 claims description 35
- 238000010521 absorption reaction Methods 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 18
- 238000005259 measurement Methods 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 4
- 230000005670 electromagnetic radiation Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ASXTVMFJPFZJMW-UHFFFAOYSA-N CCC1C(C2)C2CC1 Chemical compound CCC1C(C2)C2CC1 ASXTVMFJPFZJMW-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N2021/6491—Measuring fluorescence and transmission; Correcting inner filter effect
- G01N2021/6493—Measuring fluorescence and transmission; Correcting inner filter effect by alternating fluorescence/transmission or fluorescence/reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/065—Integrating spheres
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Photovoltaic Devices (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
12 統合した球体
14 開口
16 デバイス
20 光源
22 第一の光学デバイス
24 測定デバイス
25 半反射板
26 第二の収束デバイス
Claims (8)
- 測定光強度I0に露光された光変換体材料の開回路電圧(Vco)の最大値を決定する方法であって、前記方法は、
前記光変換体材料のフォトルミネセンス強度が、第一の光強度I1、及び第一の波長(λ1)である第一の光源を用いて前記光変換体材料を照射することによって測定される段階であって、前記第一の波長(λ1)が前記光変換体材料の吸収エネルギー(Eg)よりも大きな第一の励起エネルギーに対応し、前記第一の光強度I1が前記測定光強度I0にほぼ等しい段階、
前記光変換体材料のフォトルミネセンス波長のうちの一つとほぼ等しい第二の波長(λ2)及び第二の光強度I2である第二の光源を用いて前記光変換体材料を照射することによって、前記光変換体材料の吸収率が、前記第二の波長(λ2)で測定される段階、
並びに前記測定光強度I0における前記光変換体材料の前記開回路電圧(Vco)の最大値が、どちらもほぼ同じ波長で測定された前記吸収率及び前記フォトルミネセンス強度を用いて決定される段階、を備え、
前記光源、検出器及び前記光変換体材料が、前記材料の照射表面に入射する光線及び前記検出器によって集められる光線の角度分布並びに前記材料の照射表面から放出される光線の角度分布及び前記検出器によって集められる光線の角度分布が、幾何学的に時間を反転することに対応する、方法。 - 前記開回路電圧(Vco)が、下記の数式を用いて決定される、請求項1に記載の方法。
a(ν)は、前記光変換体材料の前記フォトルミネセンス波長にほぼ等しい前記第二の波長(λ2=c*ν2)及び前記第二の光強度I2で測定された前記光変換体の前記吸収率であり、
nν2は、前記光変換体材料の前記フォトルミネセンス波長における前記光変換体材料の光学指数であり、
cは、真空中の電磁放射の速度であり、
νは、前記光変換体材料の前記フォトルミネセンス波長に対応する周波数であり、
hは、プランク定数であり、
kは、ボルツマン定数であり、
Tは、前記光変換体の表面温度であり、
qは、素電荷の値を表し、
Vcoは、前記光変換体材料の開回路電圧である。 - 前記光変換体材料(10)の照射の立体角が光学測定デバイス(18)の集光の立体角にほぼ等しくなるように、前記光変換体材料(10)、前記第一および第二の光源、及び前記光学測定デバイス(18)が配置された、請求項1または2に記載の方法。
- 前記光変換体材料(10)が、前記第一および第二の光源によって間接的に照射されるように、前記光変換体材料(10)が統合した球状構造(12)内に配置される、請求項1から3のいずれか一項に記載の方法。
- 前記フォトルミネセンス強度及び/または前記吸収率の測定が、ダイオードまたはスペクトロメータを用いて行われる、請求項1から4のいずれか一項に記載の方法。
- 光変換体材料のエネルギー効率を決定する方法であって、前記方法は、
前記光変換体材料(10)の開回路電圧(Vco)の最大値が、請求項1から5のいずれか一項に記載の方法によって測定光強度I0において決定される段階、
前記光変換体材料の光電流が、前記測定光強度I0とほぼ等しい第三の光強度I3及び様々な波長において前記材料の吸収率を測定することにより決定される段階、
及び、前記光変換体材料の前記エネルギー効率が、前記光強度I0において下記の数式に従って決定される段階、を備える方法。
Vcoは、前記光変換体材料の前記開回路電圧の最大値であり、
FFは、前記光変換体材料の形状因子であり、
Pincは、入射パワーである。 - 強度I0の光源によって照射される光変換体材料から引き出すことのできるパワーを決定する方法であって、前記方法は、
請求項1から5のいずれか一項に記載の方法によって、前記光変換体材料の開回路電圧Vcoの最大値が、I0/20からI0の間の複数の光強度Ijにおいて決定される段階、
請求項6または7に記載の方法によって、前記光変換体材料の前記光電流Iccが決定される段階、
及びVco(Ij)の関数としてIcc*Ij/I0をプロットすることにより、前記光変換体材料から引き出すことのできるパワーが決定される段階、を備える、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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FR1050845 | 2010-02-05 | ||
FR1050845A FR2956208B1 (fr) | 2010-02-05 | 2010-02-05 | Methode de determination sans contact de caracteristiques d'un photoconvertisseur |
PCT/FR2011/050242 WO2011095752A1 (fr) | 2010-02-05 | 2011-02-07 | Methode de determination sans contact de caracteristiques d'un photoconvertisseur |
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JP2013519079A JP2013519079A (ja) | 2013-05-23 |
JP5889212B2 true JP5889212B2 (ja) | 2016-03-22 |
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JP2012551670A Expired - Fee Related JP5889212B2 (ja) | 2010-02-05 | 2011-02-07 | 非接触で光変換体の特性を決定するための方法 |
Country Status (8)
Country | Link |
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US (1) | US9297764B2 (ja) |
EP (1) | EP2531839A1 (ja) |
JP (1) | JP5889212B2 (ja) |
CN (1) | CN102947693B (ja) |
AU (1) | AU2011212294B2 (ja) |
CA (1) | CA2788911C (ja) |
FR (1) | FR2956208B1 (ja) |
WO (1) | WO2011095752A1 (ja) |
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CN105978470A (zh) * | 2016-04-08 | 2016-09-28 | 合肥中南光电有限公司 | 一种聚光光伏装置 |
CN117529649A (zh) * | 2021-06-18 | 2024-02-06 | 浜松光子学株式会社 | 测量装置 |
JPWO2022264520A1 (ja) * | 2021-06-18 | 2022-12-22 |
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WO1997027503A2 (en) * | 1996-01-11 | 1997-07-31 | The Trustees Of Princeton University | Organic luminescent coating for light detectors |
JP3287775B2 (ja) * | 1996-02-29 | 2002-06-04 | 松下電器産業株式会社 | 蛍光体の量子効率測定方法および測定装置 |
JPH10117006A (ja) * | 1996-08-23 | 1998-05-06 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換装置 |
JP3682528B2 (ja) * | 2002-01-24 | 2005-08-10 | 独立行政法人産業技術総合研究所 | 固体試料の絶対蛍光量子効率測定方法及び装置 |
JP4031712B2 (ja) * | 2003-01-17 | 2008-01-09 | 三菱電機株式会社 | 半導体多層膜の分光計測方法および分光計測装置 |
WO2006109769A1 (ja) * | 2005-04-11 | 2006-10-19 | Nippon Kayaku Kabushiki Kaisha | 光電変換素子用電解液組成物及びそれを用いた光電変換素子 |
JP2007234580A (ja) * | 2006-02-02 | 2007-09-13 | Sony Corp | 色素増感型光電変換装置 |
EP2033230A4 (en) * | 2006-05-30 | 2016-03-30 | Yeda Res & Dev | SYSTEM OF SOLAR CELLS |
WO2008037002A1 (en) * | 2006-09-25 | 2008-04-03 | Newsouth Innovations Pty Limited | Methods and systems for performing photoluminescence measurements with reduced photon reabsorption effects |
CN100555155C (zh) * | 2007-04-29 | 2009-10-28 | 中国农业大学 | 一种太阳能光伏电池最大功率点追踪的方法 |
AU2008330576B2 (en) * | 2007-11-30 | 2012-01-12 | Fujikura Ltd. | Electrolyte composition and photoelectric conversion element incorporating the same. |
US8415559B2 (en) * | 2008-02-08 | 2013-04-09 | Solopower, Inc. | Method for forming copper indium gallium chalcogenide layer with shaped gallium profile |
JP5379801B2 (ja) * | 2008-08-29 | 2013-12-25 | 株式会社カネカ | 薄膜光電変換装置およびその製造方法 |
US8227733B2 (en) * | 2009-03-31 | 2012-07-24 | Kyocera Corporation | Combined photoelectric conversion device |
EP2507843A2 (en) * | 2009-11-30 | 2012-10-10 | California Institute of Technology | Semiconductor wire array structures, and solar cells and photodetectors based on such structures |
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- 2010-02-05 FR FR1050845A patent/FR2956208B1/fr not_active Expired - Fee Related
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- 2011-02-07 WO PCT/FR2011/050242 patent/WO2011095752A1/fr active Application Filing
- 2011-02-07 JP JP2012551670A patent/JP5889212B2/ja not_active Expired - Fee Related
- 2011-02-07 EP EP11707464A patent/EP2531839A1/fr not_active Withdrawn
- 2011-02-07 US US13/574,975 patent/US9297764B2/en not_active Expired - Fee Related
- 2011-02-07 CA CA2788911A patent/CA2788911C/fr not_active Expired - Fee Related
- 2011-02-07 CN CN201180018136.XA patent/CN102947693B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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AU2011212294B2 (en) | 2015-08-13 |
JP2013519079A (ja) | 2013-05-23 |
FR2956208A1 (fr) | 2011-08-12 |
US9297764B2 (en) | 2016-03-29 |
CN102947693A (zh) | 2013-02-27 |
CN102947693B (zh) | 2015-12-09 |
EP2531839A1 (fr) | 2012-12-12 |
WO2011095752A1 (fr) | 2011-08-11 |
FR2956208B1 (fr) | 2012-04-27 |
AU2011212294A1 (en) | 2012-08-09 |
WO2011095752A8 (fr) | 2011-10-13 |
US20130066574A1 (en) | 2013-03-14 |
CA2788911C (fr) | 2019-08-06 |
CA2788911A1 (fr) | 2011-08-11 |
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