JP5885150B2 - 高誘電性ナノシート積層体、高誘電性ナノシート積層体、高誘電体素子、および高誘電体薄膜素子の製造方法 - Google Patents
高誘電性ナノシート積層体、高誘電性ナノシート積層体、高誘電体素子、および高誘電体薄膜素子の製造方法 Download PDFInfo
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- JP5885150B2 JP5885150B2 JP2011112462A JP2011112462A JP5885150B2 JP 5885150 B2 JP5885150 B2 JP 5885150B2 JP 2011112462 A JP2011112462 A JP 2011112462A JP 2011112462 A JP2011112462 A JP 2011112462A JP 5885150 B2 JP5885150 B2 JP 5885150B2
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- thin film
- perovskite
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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Description
組成式[Ca2Nan−3NbnO3n+1−d](ただし、n=5−8;d=0−2)、[(Ca1−xSrx)2Nan−3NbnO3n+1−d](ただし、x=0−1;n=4−8;d=0−2)、あるいは、[Mn−1A’n−3M’nO3n+1−d](A’は、H、Li、Na、K、Rb、Csから選ばれる少なくとも1種であり;Mは、Sr、Ba、Pb、Biあるいは希土類元素La、Ce、Pr、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luから選ばれる少なくとも1種であり;M’は、Ti、Mg、Mn、Zn、Nb、Taから選ばれる少なくとも1種であり;x=0−1;n=4−8;d=0−2)。
ここで、前記ナノシートの横サイズが10nm〜1000μmであってよい。
また、高誘電性ナノシート積層体は厚さが1nm〜100nmであってよい。
本発明の他の側面によれば、電極基板に上記いずれかの高誘電性ナノシート積層体を付着させた高誘電体素子が与えられる。
本発明の更に他の側面によれば、第1の電極基板と第2の電極基板の間に上記いずれかの高誘電性ナノシート積層体を設けた高誘電体素子が与えられる。
本発明の更に他の側面によれば、前記第1及び第2の電極基板の少なくとも一方の電極基板に上記いずれかの高誘電性ナノシート積層体を付着させ、前記高誘電性ナノシート積層体を中間にして前記第1及び第2の電極基板を配置する、前記高誘電体素子の製造方法が与えられる。
本発明の更に他の側面によれば、Langmuir−Blodgett法により前記酸化物を基板表面上に緻密かつ隙間なく被覆した単層膜を形成して前記単層膜を前記電極基板に付着する工程を繰り返すことにより前記高誘電性ナノシート積層体を作製する、前記高誘電体素子の製造方法が与えられる。
本発明の更に他の側面によれば、前記電極基板をカチオン性有機ポリマー溶液中に浸漬して、その基板表面に有機ポリマーを吸着させた後、前記ナノシートが懸濁したコロイド溶液中に浸漬することにより、前記ナノシートを静電的相互作用によって、前記ポリマー上に吸着させ、前記高誘電性ナノシート積層体を作製する、前記高誘電体素子の製造方法が与えられる。
ここで、前記ナノシートを静電的相互作用によって前記電極基板上に吸着させる前記工程において、超音波を付与して前記ナノシート同士の重複部分を除去してよい。
また、前記高誘電性ナノシート積層体を生成した後に、紫外線を照射して前記有機ポリマーを除去してよい。
また、前記高誘電性ナノシート積層体を生成した後に、加熱により前記有機ポリマーを除去してよい。
組成式HCa2NaNb4O13-d、HCa2Na2Nb5O16-d、HCa2Na3Nb6O19-d、HCa2Na4Nb7O22-d、HCa2Na5Nb8O25-d、HSr2NaNb4O13-d、HSr2Na2Nb5O16-d、HSr2Na3Nb6O19-d、HSr2Na4Nb7O22-d、HSr2Na5Nb8O25-d、HBa2NaNb4O13-d、HBa2Na2Nb5O16-d、HBa2Na3Nb6O19-d、HBa2Na4Nb7O22-d、HBa2Na5Nb8O25-d、HPb2NaNb4O13-d、HPb2Na2Nb5O16-d、HPb2Na3Nb6O19-d、HPb2Na4Nb7O22-d、HPb2Na5Nb8O25-d、H(Ca1-xSrx)2NaNb4O13-d、H(Ca1-xSrx)2Na2Nb5O16-d、H(Ca1-xSrx)2Na3Nb6O19-d、H(Ca1-xSrx)2Na4Nb7O22-d、H(Ca1-xSrx)2Na5Nb8O25-d、HCa2Na(Nb1-xTax)4O13-d、HCa2Na2(Nb1-xTax)5O16-d、HCa2Na3(Nb1-xTax)6O19-d、HCa2Na4(Nb1-xTax)7O22-d、HCa2Na5(Nb1-xTax)8O25-d、HSr2Na(Nb1-xTax)4O13-d、HSr2Na2(Nb1-xTax)5O16-d、HSr2Na3(Nb1-xTax)6O19-d、HSr2Na4(Nb1-xTax)7O22-d、HSr2Na5(Nb1-xTax)8O25-d、LiCa2NaNb4O13-d、LiCa2Na2Nb5O16-d、LiCa2Na3Nb6O19-d、LiCa2Na4Nb7O22-d、LiCa2Na5Nb8O25-d、LiSr2NaNb4O13-d、LiSr2Na2Nb5O16-d、LiSr2Na3Nb6O19-d、LiSr2Na4Nb7O22-d、LiSr2Na5Nb8O25-d、LiBa2NaNb4O13-d、LiBa2Na2Nb5O16-d、LiBa2Na3Nb6O19-d、LiBa2Na4Nb7O22-d、LiBa2Na5Nb8O25-d、LiPb2NaNb4O13-d、LiPb2Na2Nb5O16-d、LiPb2Na3Nb6O19-d、LiPb2Na4Nb7O22-d、LiPb2Na5Nb8O25-d、Li(Ca1-xSrx)2NaNb4O13-d、Li(Ca1-xSrx)2Na2Nb5O16-d、Li(Ca1-xSrx)2Na3Nb6O19-d、Li(Ca1-xSrx)2Na4Nb7O22-d、Li(Ca1-xSrx)2Na5Nb8O25-d、LiCa2Na(Nb1-xTax)4O13-d、LiCa2Na2(Nb1-xTax)5O16-d、LiCa2Na3(Nb1-xTax)6O19-d、LiCa2Na4(Nb1-xTax)7O22-d、LiCa2Na5(Nb1-xTax)8O25-d、LiSr2Na(Nb1-xTax)4O13-d、LiSr2Na2(Nb1-xTax)5O16-d、LiSr2Na3(Nb1-xTax)6O19-d、LiSr2Na4(Nb1-xTax)7O22-d、LiSr2Na5(Nb1-xTax)8O25-d、NaCa2NaNb4O13-d、NaCa2Na2Nb5O16-d、NaCa2Na3Nb6O19-d、NaCa2Na4Nb7O22-d、NaCa2Na5Nb8O25-d、NaSr2NaNb4O13-d、NaSr2Na2Nb5O16-d、NaSr2Na3Nb6O19-d、NaSr2Na4Nb7O22-d、NaSr2Na5Nb8O25-d、NaBa2NaNb4O13-d、NaBa2Na2Nb5O16-d、NaBa2Na3Nb6O19-d、NaBa2Na4Nb7O22-d、NaBa2Na5Nb8O25-d、NaPb2NaNb4O13-d、NaPb2Na2Nb5O16-d、NaPb2Na3Nb6O19-d、NaPb2Na4Nb7O22-d、NaPb2Na5Nb8O25-d、Na(Ca1-xSrx)2NaNb4O13-d、Na(Ca1-xSrx)2Na2Nb5O16-d、Na(Ca1-xSrx)2Na3Nb6O19-d、Na(Ca1-xSrx)2Na4Nb7O22-d、Na(Ca1-xSrx)2Na5Nb8O25-d、NaCa2Na(Nb1-xTax)4O13-d、NaCa2Na2(Nb1-xTax)5O16-d、NaCa2Na3(Nb1-xTax)6O19-d、NaCa2Na4(Nb1-xTax)7O22-d、NaCa2Na5(Nb1-xTax)8O25-d、NaSr2Na(Nb1-xTax)4O13-d、NaNaSr2Na2(Nb1-xTax)5O16-d、NaSr2Na3(Nb1-xTax)6O19-d、NaSr2Na4(Nb1-xTax)7O22-d、NaSr2Na5(Nb1-xTax)8O25-d、KCa2NaNb4O13-d、KCa2Na2Nb5O16-d、KCa2Na3Nb6O19-d、KCa2Na4Nb7O22-d、KCa2Na5Nb8O25-d、KSr2NaNb4O13-d、KSr2Na2Nb5O16-d、KSr2Na3Nb6O19-d、KSr2Na4Nb7O22-d、KSr2Na5Nb8O25-d、KBa2NaNb4O13-d、KBa2Na2Nb5O16-d、KBa2Na3Nb6
O19-d、KBa2Na4Nb7O22-d、KBa2Na5Nb8O25-d、KPb2NaNb4O13-d、KPb2Na2Nb5O16-d、KPb2Na3Nb6O19-d、KPb2Na4Nb7O22-d、KPb2Na5Nb8O25-d、K(Ca1-xSrx)2NaNb4O13-d、K(Ca1-xSrx)2Na2Nb5O16-d、K(Ca1-xSrx)2Na3Nb6O19-d、K(Ca1-xSrx)2Na4Nb7O22-d、K(Ca1-xSrx)2Na5Nb8O25-d、KCa2Na(Nb1-xTax)4O13-d、KCa2Na2(Nb1-xTax)5O16-d、KCa2Na3(Nb1-xTax)6O19-d、KCa2Na4(Nb1-xTax)7O22-d、KCa2Na5(Nb1-xTax)8O25-d、KSr2Na(Nb1-xTax)4O13-d、KNaSr2Na2(Nb1-xTax)5O16-d、KSr2Na3(Nb1-xTax)6O19-d、KSr2Na4(Nb1-xTax)7O22-d、KSr2Na5(Nb1-xTax)8O25-d、KCa2NaNb4O13-d、KCa2Na2Nb5O16-d、KCa2Na3Nb6O19-d、KCa2Na4Nb7O22-d、KCa2Na5Nb8O25-d、KSr2NaNb4O13-d、KSr2Na2Nb5O16-d、KSr2Na3Nb6O19-d、KSr2Na4Nb7O22-d、KSr2Na5Nb8O25-d、KBa2NaNb4O13-d、KBa2Na2Nb5O16-d、KBa2Na3Nb6O19-d、KBa2Na4Nb7O22-d、KBa2Na5Nb8O25-d、KPb2NaNb4O13-d、KPb2Na2Nb5O16-d、KPb2Na3Nb6O19-d、KPb2Na4Nb7O22-d、KPb2Na5Nb8O25-d、K(Ca1-xSrx)2NaNb4O13-d、K(Ca1-xSrx)2Na2Nb5O16-d、K(Ca1-xSrx)2Na3Nb6O19-d、K(Ca1-xSrx)2Na4Nb7O22-d、K(Ca1-xSrx)2Na5Nb8O25-d、KCa2Na(Nb1-xTax)4O13-d、KCa2Na2(Nb1-xTax)5O16-d、KCa2Na3(Nb1-xTax)6O19-d、KCa2Na4(Nb1-xTax)7O22-d、KCa2Na5(Nb1-xTax)8O25-d、KSr2Na(Nb1-xTax)4O13-d、KNaSr2Na2(Nb1-xTax)5O16-d、KSr2Na3(Nb1-xTax)6O19-d、KSr2Na4(Nb1-xTax)7O22-d、KSr2Na5(Nb1-xTax)8O25-d、RbCa2NaNb4O13-d、RbCa2Na2Nb5O16-d、RbCa2Na3Nb6O19-d、RbCa2Na4Nb7O22-d、RbCa2Na5Nb8O25-d、RbSr2NaNb4O13-d、RbSr2Na2Nb5O16-d、RbSr2Na3Nb6O19-d、RbSr2Na4Nb7O22-d、RbSr2Na5Nb8O25-d、RbBa2NaNb4O13-d、RbBa2Na2Nb5O16-d、RbBa2Na3Nb6O19-d、RbBa2Na4Nb7O22-d、RbBa2Na5Nb8O25-d、RbPb2NaNb4O13-d、RbPb2Na2Nb5O16-d、RbPb2Na3Nb6O19-d、RbPb2Na4Nb7O22-d、RbPb2Na5Nb8O25-d、Rb(Ca1-xSrx)2NaNb4O13-d、Rb(Ca1-xSrx)2Na2Nb5O16-d、Rb(Ca1-xSrx)2Na3Nb6O19-d、Rb(Ca1-xSrx)2Na4Nb7O22-d、Rb(Ca1-xSrx)2Na5Nb8O25-d、RbCa2Na(Nb1-xTax)4O13-d、RbCa2Na2(Nb1-xTax)5O16-d、RbCa2Na3(Nb1-xTax)6O19-d、RbCa2Na4(Nb1-xTax)7O22-d、RbCa2Na5(Nb1-xTax)8O25-d、RbSr2Na(Nb1-xTax)4O13-d、RbNaSr2Na2(Nb1-xTax)5O16-d、RbSr2Na3(Nb1-xTax)6O19-d、RbSr2Na4(Nb1-xTax)7O22-d、RbSr2Na5(Nb1-xTax)8O25-d、CsCa2NaNb4O13-d、CsCa2Na2Nb5O16-d、CsCa2Na3Nb6O19-d、CsCa2Na4Nb7O22-d、CsCa2Na5Nb8O25-d、CsSr2NaNb4O13-d、CsSr2Na2Nb5O16-d、CsSr2Na3Nb6O19-d、CsSr2Na4Nb7O22-d、CsSr2Na5Nb8O25-d、CsBa2NaNb4O13-d、CsBa2Na2Nb5O16-d、CsBa2Na3Nb6O19-d、CsBa2Na4Nb7O22-d、CsBa2Na5Nb8O25-d、CsPb2NaNb4O13-d、CsPb2Na2Nb5O16-d、CsPb2Na3Nb6O19-d、CsPb2Na4Nb7O22-d、CsPb2Na5Nb8O25-d、Cs(Ca1-xSrx)2NaNb4O13-d、Cs(Ca1-xSrx)2Na2Nb5O16-d、Cs(Ca1-xSrx)2Na3Nb6O19-d、Cs(Ca1-xSrx)2Na4Nb7
O22-d、Cs(Ca1-xSrx)2Na5Nb8O25-d、CsCa2Na(Nb1-xTax)4O13-d、CsCa2Na2(Nb1-xTax)5O16-d、CsCa2Na3(Nb1-xTax)6O19-d、CsCa2Na4(Nb1-xTax)7O22-d、CsCa2Na5(Nb1-xTax)8O25-d、CsSr2Na(Nb1-xTax)4O13-d、CsNaSr2Na2(Nb1-xTax)5O16-d、CsSr2Na3(Nb1-xTax)6O19-d、CsSr2Na4(Nb1-xTax)7O22-d、CsSr2Na5(Nb1-xTax)8O25-d(x=0-1;d=0-2)。
LB法とは、粘土鉱物あるいは有機ナノ薄膜の製膜法として知られる手法であり、両親媒性分子を利用して気−水界面上において会合膜を形成し、これを基板に転写させることで、均一なモノレイヤー膜を作製する手法である。ペロブスカイトナノシートの場合には、低濃度のペロブスカイトナノシート・ゾル溶液を用いると、両親媒性であるカチオン性分子を用いることなく、気−水界面にナノシートが吸着し、さらにバリヤにより、気−水界面に吸着したナノシートを寄せ集めることで、ペロブスカイトナノシートが基板表面上に緻密かつ隙間なく被覆した高品位単層膜の製造が可能になる。
そして、上記のLB法を繰り返し行い、ペロブスカイトナノシートを積層することで、多層構造を有する高誘電体薄膜が提供される。LB法の詳細については非特許文献1を参照されたい。
実際の操作としては、基板を(1)有機ポリカチオン溶液に浸漬→(2)純水で洗浄→(3)ペロブスカイトナノシート・ゾル溶液に浸漬→(4)純水で洗浄する、という一連の操作を1サイクルとして、これを少なくとも2種類のペロブスカイトナノシートに対して必要回数分反復する。有機ポリカチオンとしては、実施例記載のポリエチレンイミン(PEI)、さらに同様なカチオン性を有するポリジアリルジメチルアンモニウム塩化物(PDDA)、塩酸ポリアリルアミン(PAH)などが適当である。また、交互積層に際しては、基板表面に正電荷を導入することができれば基本的に問題なく、有機ポリマーの代わりに、正電荷を持つ無機高分子、多核水酸化物イオンを含む無機化合物を使用することもできる。
そして、上記の方法を繰り返し行い、ペロブスカイトナノシートを積層することで、多層構造を有する高誘電体薄膜が提供される。
たとえば以下の実施例に示した形態では、層状ペロブスカイト酸化物(KCa2NaNb4O13、KCa2Na2Nb5O16)を出発原料に、ペロブスカイトナノシート(Ca2NaNb4O13、Ca2Na2Nb5O16)を作製し、図1に示したように、原子平坦性エピタキシャルSrRuO3基板上にカチオン性ポリマーを介してLB法あるいは交互自己組織化積層技術により多層構造を有する高誘電体薄膜を作製している。
なお、本発明は以下の実施例によって限定されるものでないことは言うまでもない。
[1]圧縮速度0.5mm/分でバリヤを移動させて表面を圧縮することにより、気−水界面上に分散した一方の種類のペロブスカイトナノシートを寄せ集め、一定圧力になった後30分間静置する。このようにして、気−水界面にてペロブスカイトナノシートを並置一体化したモノレイヤー膜を形成する。
[2]引き上げ速度0.8mm/分で基板(1)を垂直に引き上げて前記モノレイヤー膜を基板に付着させることで、一方の種類のペロブスカイトナノシートが緻密にパックされた薄膜を得る。
[1]上記ポリカチオン溶液としてPEI溶液に20分間浸漬する
[2]Milli-Q純水で充分に洗浄する
[3]撹拌した上記ナノシートゾル溶液の一方の中に浸漬する
[4]20分経過後にMilli-Q純水で充分に洗浄する
[5]得られた薄膜をpH11のTBAOH水溶液中に浸漬しながら、超音波洗浄槽(ブランソン製、42kHz、90W)にて20分間超音波処理する。
[1]圧縮速度0.5mm/分でバリヤを移動させて表面を圧縮することにより、気−水界面上に分散した一方の種類のペロブスカイトナノシートを寄せ集め、一定圧力になった後30分間静置する。このようにして、気−水界面にてペロブスカイトナノシートを並置一体化したモノレイヤー膜を形成する。
[2]引き上げ速度0.8mm/分で基板(1)を垂直に引き上げて前記モノレイヤー膜を基板に付着させることで、一方の種類のペロブスカイトナノシートが緻密にパックされた薄膜を得る。
[1]圧縮速度0.5mm/分でバリヤを移動させて表面を圧縮することにより、気−水界面上に分散したペロブスカイトナノシートを寄せ集め、一定圧力になった後30分間静置する。このようにして、気−水界面にてペロブスカイトナノシートを並置一体化したモノレイヤー膜を形成する。
[2]引き上げ速度0.8mm/分で基板(1)を垂直に引き上げ、前記モノレイヤー膜が基板に付着し、ペロブスカイトナノシートが緻密にパックされた薄膜を得る。
なお、高誘電体薄膜の多層膜化するに当たり、上部電極基板に対しても、上記実施例1から4の手法に基づき、ペロブスカイトナノシート薄膜を付着させ、両者を併せて多層化することも本発明の範疇である。
以上の実施の形態においては、原子平坦性エピタキシャルSrRuO3基板、Pt上にペロブスカイトナノシートの多層構造を形成して高誘電体薄膜、高誘電体素子に適用する例によって本発明を説明したが、本発明に係わる高誘電体素子は、単独で薄膜コンデンサとしても利用でき、また、積層コンデンサ、高周波デバイス、DRAMメモリ、トランジスタ用ゲート絶縁体などにも利用でき、同様の優れた効果を奏する。
また、従来の高誘電体薄膜プロセスと異なり、高温でのアニール等が不要な、室温での溶液プロセスが可能になったため、従来の素子製造行程における基板界面劣化、組成ズレなどの問題を回避して、高性能の高誘電体素子を提供することができる。
Claims (11)
- NbO6八面体、TaO6八面体もしくはTiO6八面体を単位格子内に少なくとも4個内包したペロブスカイト構造を有する酸化物の厚み10nm以下のナノシートを積層し、
前記ナノシートが以下の組成式で表されるペロブスカイト酸化物である、高誘電性ナノシート積層体。
組成式[Ca2Nan−3NbnO3n+1−d](ただし、n=5−8;d=0−2)、[(Ca1−xSrx)2Nan−3NbnO3n+1−d](ただし、x=0−1;n=4−8;d=0−2)、あるいは、[Mn−1A’n−3M’nO3n+1−d](A’は、H、Li、Na、K、Rb、Csから選ばれる少なくとも1種であり;Mは、Sr、Ba、Pb、Biあるいは希土類元素La、Ce、Pr、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luから選ばれる少なくとも1種であり;M’は、Ti、Mg、Mn、Zn、Nb、Taから選ばれる少なくとも1種であり;x=0−1;n=4−8;d=0−2)。 - 前記ナノシートの横サイズが10nm〜1000μmである、請求項1に記載の高誘電性ナノシート積層体。
- 厚さが1nm〜100nmである、請求項1または2に記載の高誘電性ナノシート積層体。
- 電極基板に請求項1から3のいずれかに記載の高誘電性ナノシート積層体を付着させた高誘電体素子。
- 第1の電極基板と第2の電極基板の間に請求項1から3のいずれかに記載の高誘電性ナノシート積層体を設けた高誘電体素子。
- 前記第1及び第2の電極基板の少なくとも一方の電極基板に請求項1から3のいずれかに記載の高誘電性ナノシート積層体を付着させ、前記高誘電性ナノシート積層体を中間にして前記第1及び第2の電極基板を配置する、請求項5に記載の高誘電体素子の製造方法。
- Langmuir−Blodgett法により前記酸化物を基板表面上に緻密かつ隙間なく被覆した単層膜を形成して前記単層膜を前記電極基板に付着する工程を繰り返すことにより、前記高誘電性ナノシート積層体を作製する、請求項4又は5に記載の高誘電体素子の製造方法。
- 前記電極基板をカチオン性有機ポリマー溶液中に浸漬して、その基板表面に有機ポリマーを吸着させた後、前記ナノシートが懸濁したコロイド溶液中に浸漬することにより、前記ナノシートを静電的相互作用によって、前記ポリマー上に吸着させ、前記高誘電性ナノシート積層体を作製する、請求項4又は5に記載の高誘電体素子の製造方法。
- 前記ナノシートを静電的相互作用によって前記電極基板上に吸着させる前記工程において、超音波を付与して前記ナノシート同士の重複部分を除去する、請求項8に記載の製造方法。
- 前記高誘電性ナノシート積層体を生成した後に、紫外線を照射して前記有機ポリマーを除去する、請求項8または9に記載の素子製造方法。
- 前記高誘電性ナノシート積層体を生成した後に、加熱により前記有機ポリマーを除去する、請求項8または9に記載の製造方法。
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US10650977B2 (en) | 2017-10-27 | 2020-05-12 | Samsung Electronics Co., Ltd. | Ceramic electronic component and method of manufacturing the same and electronic device |
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WO2021095974A1 (ko) * | 2019-11-15 | 2021-05-20 | 광주과학기술원 | 유전박막, 이를 포함하는 멤커패시터, 이를 포함하는 셀 어레이, 및 그 제조 방법 |
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