JP5884543B2 - Thin film pattern forming method, mask manufacturing method, and organic EL display device manufacturing method - Google Patents
Thin film pattern forming method, mask manufacturing method, and organic EL display device manufacturing method Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 65
- 238000000034 method Methods 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 177
- 239000010408 film Substances 0.000 claims description 140
- 230000005291 magnetic effect Effects 0.000 claims description 67
- 230000003068 static effect Effects 0.000 claims description 34
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000696 magnetic material Substances 0.000 claims description 8
- 230000007261 regionalization Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 86
- 230000015572 biosynthetic process Effects 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 238000003384 imaging method Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
本発明は、基板上に一定形状の薄膜パターンを形成する薄膜パターン形成方法に関し、特に高精細な薄膜パターンの形成を容易に行い得るようにする薄膜パターン形成方法、マスクの製造方法及び有機ＥＬ表示装置の製造方法に係るものである。 The present invention relates to a thin film pattern forming method for forming a thin film pattern of a predetermined shape on the substrate, particularly thin film pattern forming method so as be performed easily formed of a high-definition thin film pattern, the manufacturing method and an organic EL of mask The present invention relates to a method for manufacturing a display device.
従来、この種の薄膜パターン形成方法は、所定のパターンに対応した形状の開口を有するマスクを基板に対して位置合わせした後、該基板上に密着させ、その後マスクを介して基板に対するパターンニング成膜するものであった（例えば、特許文献１参照）。 Conventionally, in this type of thin film pattern forming method, after aligning a mask having an opening having a shape corresponding to a predetermined pattern with respect to the substrate, the mask is brought into close contact with the substrate, and thereafter, patterning is performed on the substrate through the mask. A film was formed (see, for example, Patent Document 1).
また、他の薄膜パターン形成方法は、所定の成膜パターンに対応した複数の開口が設けられた強磁性体から成るメタルマスクを基板の一面を覆うように基板に密着させると共に、基板の他面側に配置された磁石の磁力を利用してメタルマスクを固定し、真空蒸着装置の真空槽内で上記メタルマスクの開口を通して基板の一面に蒸着材料を付着させ、薄膜パターンを形成するものであった（例えば、特許文献２参照）。 In another thin film pattern forming method, a metal mask made of a ferromagnetic material provided with a plurality of openings corresponding to a predetermined film formation pattern is closely attached to the substrate so as to cover one surface of the substrate, and the other surface of the substrate. The metal mask is fixed by using the magnetic force of the magnet arranged on the side, and the deposition material is attached to one surface of the substrate through the opening of the metal mask in the vacuum chamber of the vacuum deposition apparatus to form a thin film pattern. (For example, see Patent Document 2).
さらに他の薄膜パターン形成方法は、例えば有機ＥＬ素子の製造方法において、透明基板上に形成された陽極上に正孔注入層又は正孔輸送層を形成し、その上に発光層をインクジェット方式によりパターン形成するものであった（例えば、特許文献３参照）。 Still another thin film pattern forming method is, for example, a method for manufacturing an organic EL device, in which a hole injection layer or a hole transport layer is formed on an anode formed on a transparent substrate, and a light emitting layer is formed thereon by an inkjet method. A pattern was formed (see, for example, Patent Document 3).
そして、別の薄膜パターン形成方法は、基材フィルム上に光−熱変換層を形成し、その上に有機ＥＬ層からなる転写層を形成したドナーフィルムを基材フィルムが外側になるようにして基板上に貼り付け、基材フィルム側からレーザ光を照射して局所的に発生する熱エネルギーを利用して上記転写層を選択的に基板上に転写するようになっていた（例えば、特許文献４参照）。 In another thin film pattern forming method, a light-heat conversion layer is formed on a base film, and a donor film in which a transfer layer composed of an organic EL layer is formed on the base film is arranged on the outside. The transfer layer was selectively transferred onto the substrate by using the heat energy generated locally by applying the laser beam from the base film side and pasting it onto the substrate (for example, Patent Documents) 4).
しかし、このような従来の薄膜パターン形成方法において、上記特許文献１に記載の方法では、使用するマスクが、一般に、薄い金属板に所定形状の開口を例えばエッチング等により形成して作られるので、開口を高精度に形成することが困難であり、又金属板の熱膨張による位置ずれや反り等の影響で例えば３００ｄｐｉ以上の高精細な薄膜パターンの形成が困難であった。 However, in such a conventional thin film pattern forming method, in the method described in Patent Document 1, a mask to be used is generally formed by forming a predetermined shape of an opening in a thin metal plate, for example, by etching. It is difficult to form the opening with high precision, and it is difficult to form a high-definition thin film pattern of, for example, 300 dpi or more due to the influence of misalignment or warpage due to thermal expansion of the metal plate.
また、上記特許文献２に記載の方法では、上記特許文献１よりも基板とマスクとの密着性は改善されるものの、例えば有機ＥＬ表示装置を製造する場合、色毎にマスクを取り替える必要があること、及びＴＦＴ基板へのマスクの密着前にＴＦＴ基板とマスクとの精密な位置合わせが必要であること等により、有機ＥＬ表示装置の発光層形成工程のタクトを短縮することが困難であった。 Further, in the method described in Patent Document 2, the adhesion between the substrate and the mask is improved as compared with Patent Document 1, but when manufacturing an organic EL display device, for example, it is necessary to replace the mask for each color. In addition, it is difficult to shorten the tact time of the light emitting layer forming step of the organic EL display device due to the necessity of precise alignment between the TFT substrate and the mask before the mask adheres to the TFT substrate. .
さらに、上記特許文献３に記載の方法では、高精細な薄膜パターンの形成が可能であるものの、高分子材料による層間の材料同士が溶解し易く、例えば有機ＥＬに不可欠なヘテロ構造を持たせることが困難であった。また、溶媒内の不純物の除去が困難であるため、充分な性能を得ることが難しかった。 Furthermore, although the method described in Patent Document 3 can form a high-definition thin film pattern, it is easy to dissolve materials between layers of a polymer material, and for example, to provide a heterostructure indispensable for organic EL. It was difficult. Moreover, since it is difficult to remove impurities in the solvent, it has been difficult to obtain sufficient performance.
そして、上記特許文献４に記載の方法では、例えば有機ＥＬ表示装置の製造においては、複数の画素に対して照射するレーザ光の強度分布が不均一であるため、被照射面での温度分布が不均一となり、その結果、転写層である有機ＥＬ層の幅、形状、膜質等にばらつきが生じるという問題がある。また、ドナーフィルムの密着性が悪いときには、未転写領域が発生する場合がある。さらに、ドナーフィルムの剥離を防ぐための保護層や接着層など、機能の異なる複数の層が必要であり、且つ相互に不具合が発生しないようにする必要があり、製造コストを抑えることが難しいという問題がある。 In the method described in Patent Document 4, for example, in the manufacture of an organic EL display device, the intensity distribution of laser light applied to a plurality of pixels is non-uniform, so that the temperature distribution on the irradiated surface is As a result, there is a problem that the width, shape, film quality, and the like of the organic EL layer as a transfer layer vary. Further, when the adhesion of the donor film is poor, an untransferred region may occur. Furthermore, it is necessary to have a plurality of layers with different functions such as a protective layer and an adhesive layer to prevent the donor film from peeling, and it is necessary to prevent problems from occurring with each other. There's a problem.
そこで、本発明は、このような問題点に対処し、高精細な薄膜パターンの形成を容易に行い得るようにする薄膜パターン形成方法、マスクの製造方法及び有機ＥＬ表示装置の製造方法を提供することを目的とする。 Accordingly, the present invention is such to deal with problems, the thin film pattern forming method for such can easily perform formation of high-definition thin film pattern, provides a method of manufacturing a mask manufacturing method and an organic EL display device The purpose is to do.
上記目的を達成するために、本発明による薄膜パターン形成方法は、基板上に複数の薄膜パターンを形成する薄膜パターン形成方法であって、平板に前記薄膜パターンよりも形状寸法の大きい複数の開口部を形成した保持部材の一面に配置された可視光を透過する樹脂製のフィルムを通して前記基板上を観察しながら、前記基板上に予め定められた複数の薄膜パターン形成領域が夫々前記開口部内に位置するように前記保持部材と前記基板とを位置合わせした状態で、前記保持部材と前記基板との間に前記フィルムを挟持するステップと、前記保持部材側から、前記基板上の前記薄膜パターン形成領域に対応した前記フィルム部分にレーザ光を照射し、当該部分の前記フィルムに前記薄膜パターンと形状寸法の同じ複数の開口パターンを設けてマスクを形成するステップと、前記基板上の前記薄膜パターン形成領域に前記マスクの前記開口パターンを介して成膜するステップと、前記マスクを剥離するステップと、を行うものである。 In order to achieve the above object, a thin film pattern forming method according to the present invention is a thin film pattern forming method for forming a plurality of thin film patterns on a substrate, and a plurality of openings having a shape dimension larger than that of the thin film pattern on a flat plate. A plurality of thin film pattern forming regions predetermined on the substrate are positioned in the openings while observing the substrate through a resin film that transmits visible light disposed on one surface of the holding member formed with the substrate. in a state where the holding member and the aligned and the substrate to the steps of sandwiching the film between the substrate and the holding member from the holding member, the thin film pattern forming region on the substrate The film portion corresponding to the above is irradiated with laser light, and a plurality of opening patterns having the same shape and dimensions as the thin film pattern are provided in the film of the portion. Forming a mask, a step of forming through said opening pattern of the mask on the thin film pattern forming region on the substrate, a step of removing the mask, and performs.
また、前記フィルムを挟持するステップの前に、前記保持部材に前記フィルムを保持してマスク用部材を形成するステップを行ってもよい。In addition, before the step of sandwiching the film, a step of forming a mask member by holding the film on the holding member may be performed.
この場合、前記マスク用部材を形成するステップにおいては、さらに、前記フィルムの面をエッチングして、少なくとも前記保持部材の前記開口部に対応した部分の前記フィルムの厚みを薄くするとよい。In this case, in the step of forming the mask member, the surface of the film may be further etched to reduce the thickness of the film at least in a portion corresponding to the opening of the holding member.
好ましくは、前記フィルムを挟持するステップにおいては、前記フィルムと前記基板との間に可視光を透過する透明部材を介在させ、前記透明部材は、前記マスクを形成するステップと前記成膜ステップとの間で抜き取られるのが望ましい。Preferably, in the step of sandwiching the film, a transparent member that transmits visible light is interposed between the film and the substrate, and the transparent member includes a step of forming the mask and a step of forming the film. It is desirable to be extracted in between.
さらに好ましくは、前記保持部材は、磁性体を含んで構成され、前記フィルムを挟持するステップにおいては、内部に静磁界発生手段を備えたステージ上に前記基板を載置した後、前記静磁界発生手段の静磁界により前記保持部材を前記基板上に吸着して前記フィルムを挟持するのがよい。More preferably, the holding member includes a magnetic body, and in the step of sandwiching the film, the static magnetic field generation is performed after the substrate is placed on a stage having a static magnetic field generation means therein. It is preferable that the holding member is attracted to the substrate by a static magnetic field of the means to sandwich the film.
又は、前記保持部材は、非磁性体を含んで構成され、前記フィルムを挟持するステップにおいては、一定の電圧を印加可能に構成されたステージ上に前記基板を載置した後、前記ステージに電圧を印加し、前記保持部材を前記基板上に静電吸着して前記フィルムを挟持してもよい。Alternatively, the holding member includes a non-magnetic material, and in the step of sandwiching the film, the substrate is placed on a stage configured to be able to apply a constant voltage, and then the voltage is applied to the stage. And the holding member may be electrostatically adsorbed on the substrate to sandwich the film.
より好ましくは、前記レーザ光は、波長が４００ｎｍ以下であるのが望ましい。More preferably, the wavelength of the laser beam is 400 nm or less.
さらに、本発明によるマスクの製造方法は、基板上に複数の薄膜パターンを形成するためのマスクの製造方法であって、前記基板上に予め定められた複数の薄膜パターン形成領域に対応して前記薄膜パターンよりも形状の大きい細長状の複数列の開口部を貫通させて形成した磁性金属板の保持部材の一面に、前記開口部を通して前記基板上を観察可能にした可視光を透過する樹脂製のフィルムを保持してマスク用部材を形成し、前記フィルムを通して前記基板上を観察しながら、前記複数の薄膜パターン形成領域が夫々前記開口部内に位置するように前記マスク用部材の前記保持部材と前記基板とを位置合わせした状態で、磁界により前記保持部材を前記基板側に吸着して前記保持部材と前記基板との間に前記フィルムを挟持する工程と、前記保持部材側からレーザ光を照射し、前記基板上の前記複数の薄膜パターン形成領域に対応して前記保持部材の複数列の前記開口部内の前記フィルムに夫々、前記薄膜パターンと形状寸法の同じ複数の開口パターンを一列に並べて形成する工程と、を行うものである。 Furthermore, a mask manufacturing method according to the present invention is a mask manufacturing method for forming a plurality of thin film patterns on a substrate, wherein the mask corresponds to a plurality of thin film pattern forming regions predetermined on the substrate. Made of resin that transmits visible light through one of the openings on one side of a magnetic metal plate holding member formed through a plurality of elongated openings that are larger than the thin film pattern. The mask member is formed by holding the film and observing the substrate through the film so that the plurality of thin film pattern forming regions are located in the openings. in alignment with said substrate, a step of sandwiching the film between the substrate and the holding member by adsorbing the holding member on the substrate side by the magnetic field, before The plurality of thin film patterns having the same dimensions as the thin film patterns are irradiated onto the films in the openings of the plurality of rows of the holding members corresponding to the plurality of thin film pattern forming regions on the substrate by irradiating laser light from the holding member side. And forming the opening patterns in a line.
また、本発明による有機ＥＬ表示装置の製造方法は、ＴＦＴ基板のアノード電極上に対応色の有機ＥＬ層を形成して有機ＥＬ表示装置を製造する有機ＥＬ表示装置の製造方法であって、平板に前記有機ＥＬ層のパターンよりも形状寸法の大きい開口部を形成した保持部材の一面に配置された可視光を透過する樹脂製のフィルムを通して前記ＴＦＴ基板上を観察しながら、前記保持部材と前記ＴＦＴ基板とを前記ＴＦＴ基板上の特定色のアノード電極が前記開口部内に位置するように位置合わせした状態で、前記保持部材と前記ＴＦＴ基板との間に前記フィルムを挟持するステップと、前記保持部材側から、前記ＴＦＴ基板上の前記特定色のアノード電極に対応した前記フィルム部分にレーザ光を照射し、当該部分の前記フィルムに前記有機ＥＬ層のパターンと形状寸法の同じ開口パターンを設けてマスクを形成するステップと、前記ＴＦＴ基板上の前記特定色のアノード電極上に前記マスクの前記開口パターンを介して特定色の有機ＥＬ層を成膜形成するステップと、前記マスクを剥離するステップと、を含むものである。 A method for manufacturing an organic EL display device according to the present invention is a method for manufacturing an organic EL display device in which an organic EL display device is manufactured by forming an organic EL layer of a corresponding color on an anode electrode of a TFT substrate. While observing the TFT substrate through a resin film that transmits visible light disposed on one surface of the holding member formed with an opening having a larger shape than the pattern of the organic EL layer, the holding member and the the TFT substrate in a state where the anode electrode of the specific color are aligned so as to be positioned in the opening on the TFT substrate, a step of sandwiching the film between the TFT substrate and the holding member, the holding from member side, the laser beam is irradiated on the film portion corresponding to the specific color anode electrode on the TFT substrate, the organic E on the film of the partial Forming a mask by providing an opening pattern having the same shape and dimension as the layer pattern; and forming an organic EL layer of a specific color on the anode electrode of the specific color on the TFT substrate via the opening pattern of the mask. The method includes a step of forming a film and a step of peeling the mask.
また、前記フィルムを挟持するステップの前に、前記保持部材に前記フィルムを保持してマスク用部材を形成するステップを行ってもよい。In addition, before the step of sandwiching the film, a step of forming a mask member by holding the film on the holding member may be performed.
この場合、前記マスク用部材を形成するステップにおいては、さらに、前記フィルムの面をエッチングして、少なくとも前記保持部材の前記開口部に対応した部分の前記フィルムの厚みを薄くするとよい。In this case, in the step of forming the mask member, the surface of the film may be further etched to reduce the thickness of the film at least in a portion corresponding to the opening of the holding member.
好ましくは、前記フィルムを挟持するステップにおいては、前記フィルムと前記ＴＦＴ基板との間に可視光を透過する透明部材を介在させ、前記透明部材は、前記マスクを形成するステップと前記成膜ステップとの間で抜き取られるのが望ましい。Preferably, in the step of sandwiching the film, a transparent member that transmits visible light is interposed between the film and the TFT substrate, and the transparent member includes the step of forming the mask and the film forming step. It is desirable to be extracted between.
また、前記保持部材には、一列に並んだ複数の前記特定色のアノード電極を内包する大きさの、複数列の細長状の前記開口部が形成され、前記開口パターンは、各列の前記開口部内に一列に並べて複数形成されるのが望ましい。 Further, the holding member is formed with a plurality of rows of elongated openings having a size including a plurality of anodes of the specific color arranged in a row, and the opening pattern includes the openings of the rows. the done multiple shapes in a row in the portion is desired.
さらに好ましくは、前記保持部材は、磁性体を含んで構成され、前記フィルムを挟持するステップにおいては、内部に静磁界発生手段を備えたステージ上に前記ＴＦＴ基板を載置した後、前記静磁界発生手段の静磁界により前記保持部材を前記ＴＦＴ基板上に吸着して前記フィルムを挟持するのがよい。 More preferably, the holding member includes a magnetic body, and in the step of sandwiching the film, after placing the TFT substrate on a stage having a static magnetic field generating means therein, the static magnetic field It is preferable that the holding member is attracted onto the TFT substrate by a static magnetic field of the generating means to sandwich the film.
又は、前記保持部材は、非磁性体を含んで構成され、前記フィルムを挟持するステップにおいては、一定の電圧を印加可能に構成されたステージ上に前記ＴＦＴ基板を載置した後、前記ステージに電圧を印加し、前記保持部材を前記ＴＦＴ基板上に静電吸着して前記フィルムを挟持してもよい。 Alternatively, the holding member is configured to include a non-magnetic material, and in the step of sandwiching the film, after the TFT substrate is placed on a stage configured to be able to apply a constant voltage, the holding member is placed on the stage. A voltage may be applied, and the holding member may be electrostatically adsorbed on the TFT substrate to sandwich the film.
より好ましくは、前記レーザ光は、波長が４００ｎｍ以下であるのが望ましい。 More preferably, the wavelength of the laser beam is 400 nm or less.
本発明の薄膜パターン形成方法、それに使用するマスク及びマスクの製造方法の発明によれば、基板と保持部材との間に挟持された樹脂製フィルムの薄膜パターンを形成しようとする領域に対応した部分にレーザ光を照射することにより、開口パターンを形成してマスクを形成するので、基板の薄膜パターン形成領域とマスクの開口パターンとの位置合わせが不要であり、且つマスクが基板面に対して密着固定されるため、従来技術と違って、マスクの撓みや位置ずれが生じたり、マスク下面と基板上面との間の隙間に成膜用の材料分子が回り込んで付着し、薄膜パターンを拡大させたりするおそれがない。したがって、高精細な薄膜パターンの形成を容易に行うことができる。さらに、フィルムが透明であるため、フィルムを通してアノード電極等の基準となる位置が検出可能であり、開口パターンを位置精度よく形成することができる。 Thin film pattern forming method of the present invention, according to the invention of the mask and method for manufacturing a mask for use therewith, the portion corresponding to the clamped region to form the thin film pattern of the resin film was between the substrate and the holding member Since the mask is formed by forming an opening pattern by irradiating the substrate with laser light, alignment between the thin film pattern forming region of the substrate and the opening pattern of the mask is unnecessary, and the mask is in close contact with the substrate surface. Unlike the conventional technology, the mask is bent and displaced, or the film material molecules wrap around and adhere to the gap between the mask lower surface and the substrate upper surface, expanding the thin film pattern. There is no fear of Therefore, it is possible to easily form a high-definition thin film pattern. Furthermore, since the film is transparent, the reference position of the anode electrode or the like can be detected through the film, and the opening pattern can be formed with high positional accuracy.
また、本発明の有機ＥＬ表示装置の製造方法の発明によれば、ＴＦＴ基板に密着させた樹脂製フィルムのアノード電極に対応した部分にレーザ光を照射することにより、開口パターンを形成してマスクを形成するようにしているので、ＴＦＴ基板のアノード電極とマスクの開口パターンとの位置合わせが不要であり、且つマスクが基板面に対して密着固定されるため、従来技術と違って、マスクの撓みや位置ずれが生じたり、マスク下面とＴＦＴ基板上面との間の隙間に有機ＥＬ層の材料分子が回り込んで付着し、有機ＥＬ層の薄膜パターンを拡大させたりするおそれがない。したがって、高精細な有機ＥＬ層の薄膜パターンの形成を容易に行うことができる。これにより、高精細な有機ＥＬ表示装置を製造することができる。 Further, according to the invention of the manufacturing method of the organic EL display device of the present invention, the mask is formed by irradiating the portion corresponding to the anode electrode of the resin film adhered to the TFT substrate with a laser beam to form an opening pattern. Therefore, unlike the conventional technique, the mask is not closely aligned with the anode pattern of the TFT substrate and the opening pattern of the mask. There is no risk of bending or displacement, or material molecules of the organic EL layer wrap around and adhere to the gap between the lower surface of the mask and the upper surface of the TFT substrate, and enlarge the thin film pattern of the organic EL layer. Therefore, it is possible to easily form a thin film pattern of a high-definition organic EL layer. Thereby, a high-definition organic EL display device can be manufactured.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１〜５は本発明による有機ＥＬ表示装置の製造方法の実施形態を示す工程図である。この有機ＥＬ表示装置の製造方法は、ＴＦＴ基板上のアノード電極上に対応色の有機ＥＬ層を形成して有機ＥＬ表示装置を製造する方法であり、赤色（Ｒ）有機ＥＬ層形成工程と、緑色（Ｇ）有機ＥＬ層形成工程と、青色（Ｂ）有機ＥＬ層形成工程と、カソード電極形成工程とからなる。 Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. 1 to 5 are process diagrams showing an embodiment of a method for manufacturing an organic EL display device according to the present invention. This organic EL display device manufacturing method is a method of manufacturing an organic EL display device by forming an organic EL layer of a corresponding color on an anode electrode on a TFT substrate, and a red (R) organic EL layer forming step, It consists of a green (G) organic EL layer forming step, a blue (B) organic EL layer forming step, and a cathode electrode forming step.
図１は、Ｒ有機ＥＬ層形成工程を示す断面説明図である。このＲ有機ＥＬ層形成工程は、有機材料を真空中で加熱してＴＦＴ基板１にその有機材料を蒸着する方法や、インクジェット法などの公知の技術によりＴＦＴ基板１の赤色（Ｒ）に対応した複数のアノード電極２Ｒ（薄膜パターン形成領域）上に正孔注入層、正孔輸送層、Ｒ発光層、電子輸送層等、一般的な積層構造をとるように順次成膜してＲ有機ＥＬ層３Ｒを形成する工程であり、磁性体を含んで構成された平板に、Ｒ有機ＥＬ層３Ｒのパターンよりも形状寸法の大きい複数の開口部４を形成した保持部材５に可視光を透過する樹脂製のフィルム６を保持してマスク用部材７を形成する第１ステップ（同図（ａ）参照）と、内部に静磁界発生手段８を備えた磁気チャックステージ９上にＴＦＴ基板１を載置する第２ステップ（同図（ｂ）参照）と、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒが保持部材５の上記開口部４内に位置するように上記マスク用部材７の保持部材５とＴＦＴ基板１とを位置合わせしてマスク用部材７をＴＦＴ基板１上に載置する第３ステップ（同図（ｃ）参照）と、上記静磁界発生手段８の静磁界により保持部材５をＴＦＴ基板１側に吸着し、保持部材５とＴＦＴ基板１との間にフィルム６を挟持した状態でフィルム６をＴＦＴ基板１面に密着させる第４ステップ（同図（ｄ）参照）と、保持部材５側からＴＦＴ基板１上のＲ対応のアノード電極２Ｒに対応したフィルム６部分にレーザ光Ｌを照射し、当該部分のフィルム６にＲ有機ＥＬ層３Ｒのパターンと形状寸法の同じ開口パターン１０を設けてマスク１１を形成する第５ステップ（同図（ｅ）参照）と、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒ上にマスク１１の開口パターン１０を介してＲ有機ＥＬ層３Ｒを成膜形成する第６ステップ（同図（ｆ）参照）と、上記マスク１１を同図に示す矢印Ａ方向に持ち上げて剥離する第７ステップ（同図（ｇ）参照）と、を実行するものである。 FIG. 1 is a cross-sectional explanatory view showing the R organic EL layer forming step. This R organic EL layer forming step corresponds to the red (R) of the TFT substrate 1 by a known technique such as a method of heating the organic material in a vacuum to deposit the organic material on the TFT substrate 1 or an inkjet method. A plurality of anode electrodes 2R (thin film pattern formation regions) are sequentially formed to form a general laminated structure such as a hole injection layer, a hole transport layer, an R light emitting layer, an electron transport layer, and the like, and an R organic EL layer Resin that is a step of forming 3R and transmits visible light to holding member 5 in which a plurality of openings 4 having a shape and dimension larger than the pattern of R organic EL layer 3R are formed on a flat plate including a magnetic material. A TFT substrate 1 is placed on a magnetic chuck stage 9 having a static magnetic field generating means 8 therein, and a first step (see FIG. 1A) for forming a mask member 7 by holding a film 6 made of a metal. The second step ((b) in the figure) And irradiation) are aligned with the TFT substrate 1 holding member 5 of the mask member 7 as R corresponding anode electrodes 2R on the TFT substrate 1 is positioned within the opening 4 of the holding member 5 Mask The holding member 5 is attracted to the TFT substrate 1 side by the third step (see FIG. 5C) of placing the member 7 on the TFT substrate 1 and the static magnetic field of the static magnetic field generating means 8, and the holding member 5 4th step (refer to the figure (d)) which makes film 6 stick to TFT substrate 1 surface in the state where film 6 was pinched between TFT substrate 1 and R correspondence on TFT substrate 1 from the holding member 5 side A step of irradiating the film 6 corresponding to the anode electrode 2R with the laser light L, providing the opening pattern 10 having the same shape and dimension as the pattern of the R organic EL layer 3R on the film 6 of the part, and forming a mask 11 (See figure (e) ), A sixth step (see FIG. 5F) for forming an R organic EL layer 3R on the anode electrode 2R corresponding to R on the TFT substrate 1 through the opening pattern 10 of the mask 11, and the mask The seventh step (see (g) in the figure) is performed in which 11 is lifted in the direction of arrow A shown in FIG.
より詳細には、先ず、第１ステップにおいては、例えばニッケル板やＮｉＦｅ合金（パーマロイ）等の磁性材料からなる１５μｍ〜５０μｍ程度の厚みの金属板の保持部材５に、ＴＦＴ基板１の複数列のＲ対応のアノード電極２Ｒの配列ピッチと同ピッチで、図２（ａ）に示すように１列に並んだ複数のＲ対応のアノード電極２Ｒが内部に完全に収まる十分な大きさの、複数列の細長状の開口部４をエッチングや打ちぬき等により形成した後、同図（ｂ）に同図（ａ）のＯ−Ｏ線断面で示すように保持部材５の一面に例えば粘着剤を介して例えば厚みが１０μｍ〜３０μｍ程度のポリエチレンテレフタレート（ＰＥＴ）やポリイミド等の紫外線レーザアブレーションが可能なフィルム６を貼り付け、次いで、同図（ｃ）に一部拡大して示すように保持部材５側から上記フィルム６を例えばドライエッチングし、上記開口部４に対応した部分のフィルム６の厚みを例えば数μｍ程度まで薄くしてマスク用部材７を形成する。これにより、微細な開口パターンも精度よく形成することが可能となる。なお、フィルム６のエッチングは、保持部材５とは反対側から行ってもよく、又は両側から行ってもよい。また、フィルム６のエッチングは、ドライエッチングではなく、ウエットエッチングであってもよい。さらに、上記保持部材５は、フィルム６の一面の上記開口部４に対応した部分の外側領域にメッキ形成されたものであってもよい。 More specifically, first, in the first step, a plurality of rows of TFT substrates 1 are formed on a holding member 5 of a metal plate having a thickness of about 15 μm to 50 μm made of a magnetic material such as a nickel plate or a NiFe alloy (permalloy). A plurality of rows having the same pitch as the arrangement pitch of the anode electrodes 2R corresponding to R, and a large enough size so that the plurality of anode electrodes 2R arranged in a row as shown in FIG. The elongated opening 4 is formed by etching or punching, and then, for example, an adhesive is interposed on one surface of the holding member 5 as shown in FIG. For example, a film 6 capable of ultraviolet laser ablation such as polyethylene terephthalate (PET) or polyimide having a thickness of about 10 μm to 30 μm is pasted, and then partially enlarged in FIG. Holding member 5 side the film 6, for example by dry etching to form a mask member 7 by reducing the thickness of the portion of the film 6 corresponding to the opening 4 to several μm, for example, about. This makes it possible to form a fine opening pattern with high accuracy. The etching of the film 6 may be performed from the side opposite to the holding member 5 or may be performed from both sides. Further, the etching of the film 6 may be wet etching instead of dry etching. Further, the holding member 5 may be formed by plating in an outer region of a portion corresponding to the opening 4 on one surface of the film 6.
次に、第２ステップにおいては、図１（ｂ）に示すように、内部に静磁界発生手段８として例えば永久磁石を備えた磁気チャックステージ９上にＴＦＴ基板１のアノード電極２Ｒ，２Ｇ，２Ｂを形成した面を上側にして載置する。この場合、上記磁気チャックステージ９は、例えば吸着面が平滑に形成されたものである。なお、上記静磁界発生手段８は、図示省略の昇降手段により昇降するようになっており、上記第２ステップにおいては、静磁界発生手段８は、磁気チャックステージ９の底部に下降している。 Next, in the second step, as shown in FIG. 1B, the anode electrodes 2R, 2G, 2B of the TFT substrate 1 are formed on the magnetic chuck stage 9 provided with, for example, a permanent magnet as the static magnetic field generating means 8 therein. It is placed with the surface on which is formed facing upward. In this case, the magnetic chuck stage 9 has, for example, a smooth attracting surface. The static magnetic field generating means 8 is moved up and down by a lifting / lowering means (not shown). In the second step, the static magnetic field generating means 8 is lowered to the bottom of the magnetic chuck stage 9.
続いて、第３ステップにおいては、図１（ｃ）に示すように、マスク用部材７のフィルム６側をＴＦＴ基板１側としてＴＦＴ基板１上に載置した後、例えば顕微鏡下で保持部材５の開口部４内に位置するフィルム６を通して検出されるＴＦＴ基板１のＲ対応のアノード電極２Ｒと、保持部材５の開口部４とを観察しながら、複数のＲ対応のアノード電極２Ｒが保持部材５の開口部４内に完全に収まるようにマスク用部材７を磁気チャックステージ９の上面に平行な面内で２次元方向に移動及び回転してマスク用部材７の保持部材５とＴＦＴ基板１とを位置合わせする。この場合、静磁界発生手段８は、磁気チャックステージ９の底部に下降しているので、保持部材５に作用する静磁界強度は小さい。したがって、マスク用部材７は、ＴＦＴ基板１面上を自由に移動することができる。なお、磁気チャックステージ９の上面にＴＦＴ基板１を位置決めして載置可能に凹部を形成し、該凹部の外側に位置決めピンを設けると共に、該位置決めピンに対応して保持部材５に位置決め孔を形成すれば、上記位置決めピンに上記位置決め孔を嵌合するだけでＴＦＴ基板１とマスク用部材７との位置合わせをすることができる。 Subsequently, in the third step, as shown in FIG. 1C, after the film member side of the mask member 7 is placed on the TFT substrate 1 with the TFT substrate 1 side, the holding member 5 is, for example, under a microscope. While observing the R corresponding anode electrode 2R of the TFT substrate 1 detected through the film 6 positioned in the opening 4 and the opening 4 of the holding member 5, the plurality of R corresponding anode electrodes 2R are held by the holding member. The mask member 7 is moved and rotated in a two-dimensional direction in a plane parallel to the upper surface of the magnetic chuck stage 9 so that the mask member 7 is completely accommodated in the opening 4 of the mask 5 and the TFT substrate 1. And align. In this case, since the static magnetic field generating means 8 is lowered to the bottom of the magnetic chuck stage 9, the static magnetic field strength acting on the holding member 5 is small. Therefore, the mask member 7 can freely move on the surface of the TFT substrate 1. A recess is formed on the upper surface of the magnetic chuck stage 9 so that the TFT substrate 1 can be positioned and placed, a positioning pin is provided outside the recess, and a positioning hole is formed in the holding member 5 corresponding to the positioning pin. If formed, the TFT substrate 1 and the mask member 7 can be aligned only by fitting the positioning hole into the positioning pin.
次いで、第４ステップにおいては、図１（ｄ）に示すように、静磁界発生手段８を磁気チャックステージ９の上部まで上昇させて静磁界を保持部材５に作用させ、保持部材５をＴＦＴ基板１側に吸着してフィルム６をＴＦＴ基板１の上面に密着させる。 Next, in the fourth step, as shown in FIG. 1D, the static magnetic field generating means 8 is raised to the upper part of the magnetic chuck stage 9 to cause the static magnetic field to act on the holding member 5, and the holding member 5 is moved to the TFT substrate. The film 6 is adhered to the upper surface of the TFT substrate 1 by adsorbing to the first side.
次に、第５ステップにおいては、図１（ｅ）に示すように、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒ上にレーザ光Ｌを照射し、当該アノード電極２Ｒ上のフィルム６にＲ対応のアノード電極２Ｒと形状寸法が略同じであり、各列の開口部４内に、該開口部４の長軸に沿って一列に並べて複数の開口パターン１０を設けてマスク１１を形成する。ここで使用するレーザは、波長が４００ｎｍ以下のエキシマレーザであり、例えばＫｒＦ２４８ｎｍのレーザである。このような紫外線のレーザ光Ｌの光エネルギーにより、ポリエチレンテレフタレート（ＰＥＴ）やポリイミド等のフィルム６の炭素結合が一瞬のうちに破壊されて除去されるため、残渣の発生を抑制したクリーンな穴あけ加工を行うことができる。この場合、レーザ光Ｌの照射による熱的過程を使用しないため、レーザ光Ｌの光束断面と形状寸法が略同じ貫通パターンを加工することができ、縮小結像手段を用いれば、数μｍ程度の開口パターン１０を有するマスク１１の形成も可能である。したがって、従来よりも増してより高精細な薄膜パターンを形成することができる。 Next, in the fifth step, as shown in FIG. 1 (e), the R-compatible anode electrode 2R on the TFT substrate 1 is irradiated with the laser light L, and the film 6 on the anode electrode 2R is R-compatible. The mask 11 is formed by providing a plurality of opening patterns 10 arranged in a line along the long axis of the openings 4 in the openings 4 of each row. The laser used here is an excimer laser having a wavelength of 400 nm or less, for example, a KrF248 nm laser. Because of the light energy of the ultraviolet laser beam L, the carbon bond of the film 6 such as polyethylene terephthalate (PET) or polyimide is broken and removed in an instant, so a clean drilling process that suppresses the generation of residues It can be performed. In this case, since the thermal process by the irradiation of the laser beam L is not used, a penetration pattern having substantially the same cross-sectional shape and shape as the beam of the laser beam L can be processed. It is also possible to form the mask 11 having the opening pattern 10. Therefore, it is possible to form a thin film pattern with higher definition than before.
図６は、上記第５ステップにおいて使用するレーザ加工装置の一構成例を示す正面図である。
このレーザ加工装置は、ＴＦＴ基板１を同図に矢印Ｂで示す方向に一定速度で搬送しながら、ＴＦＴ基板１上のマスク用部材７にレーザ光Ｌを照射してアノード電極２Ｒ〜２Ｂ上に有機ＥＬ層３Ｒ〜３Ｂのパターンと形状寸法が略同じ開口パターン１０を設けてマスク１１を形成するためのものであり、搬送手段１２と、レーザ光学系１３と、撮像手段１４と、アライメント手段１５と、制御手段１６と、を備えて構成されている。
FIG. 6 is a front view showing a configuration example of the laser processing apparatus used in the fifth step.
This laser processing apparatus irradiates the mask member 7 on the TFT substrate 1 with the laser beam L while conveying the TFT substrate 1 at a constant speed in the direction indicated by the arrow B in FIG. The mask 11 is formed by providing the opening pattern 10 having substantially the same shape and dimensions as the patterns of the organic EL layers 3R to 3B. The transport unit 12, the laser optical system 13, the imaging unit 14, and the alignment unit 15 are used. And control means 16.
上記搬送手段１２は、上面に複数のエア噴出孔及びエア吸引孔を形成した搬送ステージ１７上に一体化されたＴＦＴ基板１と磁気チャックステージ９とを載置し、エアの噴出力と吸引力とをバランスさせてＴＦＴ基板１及び磁気チャックステージ９を上記搬送ステージ１７上に一定量だけ浮上させた状態で、磁気チャックステージ９の矢印Ｂ方向に平行な縁部を図示省略の移動機構により保持して搬送するものである。 The transfer means 12 mounts the TFT substrate 1 and the magnetic chuck stage 9 integrated on a transfer stage 17 having a plurality of air ejection holes and air suction holes formed on the upper surface, and outputs air jetting power and suction force. And the TFT substrate 1 and the magnetic chuck stage 9 are floated on the transfer stage 17 by a certain amount, and the edge parallel to the arrow B direction of the magnetic chuck stage 9 is held by a moving mechanism (not shown). And transport it.
上記搬送手段１２の上方には、レーザ光学系１３が設けられている。このレーザ光学系１３は、紫外線のレーザ光ＬをＴＦＴ基板１上の選択されたアノード電極２Ｒ〜２Ｂ上に照射させるものであり、例えばＫｒＦ２４８ｎｍのレーザ光Ｌを放射するエキシマレーザ１８と、レーザ光Ｌの光束径を拡大すると共に、強度分布を均一化して平行光を後述のフォトマスク２１に照射させるカップリング光学系１９と、上記搬送ステージ１７の上面に対向して配置され、搬送ステージ１７の上面に平行な面内にて、矢印Ｂ方向と交差する方向に複数の開口２０（図７参照）を形成したフォトマスク２１とを備えて構成されている。 A laser optical system 13 is provided above the conveying means 12. The laser optical system 13 irradiates the selected anode electrodes 2R to 2B on the TFT substrate 1 with ultraviolet laser light L. For example, an excimer laser 18 that emits laser light L of KrF 248 nm, and laser light A coupling optical system 19 that expands the L light beam diameter and makes the intensity distribution uniform to irradiate parallel light onto a photomask 21 to be described later, and the upper surface of the transfer stage 17 are disposed opposite to each other. A photomask 21 having a plurality of openings 20 (see FIG. 7) formed in a direction crossing the arrow B direction in a plane parallel to the upper surface is provided.
ここで、上記フォトマスク２１について詳細に説明すると、フォトマスク２１は、例えば図７に示すように、透明な基板２２の一面に設けたクロム（Ｃｒ）等の遮光膜２３に、ＴＦＴ基板１の矢印Ｂ方向と交差する方向のアノード電極２Ｒ〜２Ｂの配列ピッチＸの３倍の配列ピッチ３Ｘで一列に並べて開口２０を形成し、他面には、各開口２０の中心と中心軸を合致されて複数のマイクロレンズ２４を形成したものであり、マイクロレンズ２４により開口２０をＴＦＴ基板１上に縮小投影するようになっている。この場合、開口２０の大きさは、マイクロレンズ２４の縮小倍率をＭとすると、有機ＥＬ層３Ｒ〜３ＢのパターンサイズのＭ倍の大きさに形成される。なお、同図（ａ）において、斜線を付した領域は、レーザ光Ｌが照射される領域である。 Here, the photomask 21 will be described in detail. For example, as shown in FIG. 7, the photomask 21 is formed on a light shielding film 23 such as chromium (Cr) provided on one surface of a transparent substrate 22. The openings 20 are arranged in a line at an arrangement pitch 3X that is three times the arrangement pitch X of the anode electrodes 2R to 2B in the direction crossing the arrow B direction, and the center and the central axis of each opening 20 are matched on the other surface. A plurality of microlenses 24 are formed, and the aperture 20 is reduced and projected onto the TFT substrate 1 by the microlens 24. In this case, the size of the opening 20 is M times the pattern size of the organic EL layers 3R to 3B, where M is the reduction magnification of the microlens 24. In addition, in the figure (a), the area | region which attached the oblique line is an area | region to which the laser beam L is irradiated.
また、上記複数の開口２０の中心に対して矢印Ｂと反対方向に一定距離だけ離れた位置に、矢印Ｂ方向と交差する長手中心軸を有する細長状の覗き窓２５が形成されている。この覗き窓２５は、フォトマスク２１の下側を通過するＴＦＴ基板１の表面をフォトマスク２１の上方から後述の撮像手段１４により撮影可能にするためのものであり、覗き窓２５内には、いずれかの開口２０の中心と長手中心軸を合致させて矢印Ｂ方向に平行な細線状の少なくとも一本のアライメントマーク２６（ここでは、一本のアライメントマークで示す）が設けられている。 An elongated viewing window 25 having a longitudinal central axis intersecting the arrow B direction is formed at a position away from the center of the plurality of openings 20 by a certain distance in the direction opposite to the arrow B. This viewing window 25 is for enabling the surface of the TFT substrate 1 passing under the photomask 21 to be photographed by the imaging means 14 described later from above the photomask 21, and in the viewing window 25, There is provided at least one alignment mark 26 (in this case, indicated by one alignment mark) in the form of a thin line parallel to the arrow B direction so that the center of any one of the openings 20 coincides with the longitudinal central axis.
上記搬送手段１２の上方には、撮像手段１４が設けられている。この撮像手段１４は、上記フォトマスク２１の覗き窓２５を通してＴＦＴ基板１の表面を撮影するものであり、矢印Ｂ方向と交差する方向に複数の受光エレメントを一直線に並べて有するラインカメラである。そして、複数の受光エレメントの並び方向の中心軸が上記フォトマスク２１の覗き窓２５の長手中心軸と合致するように配設されている。さらに、撮像手段１４の撮影領域をＴＦＴ基板１の上方側から照明可能に図示省略の照明手段が設けられている。なお、図６において符号２７は、撮像系の光路を折り曲げる反射ミラーである。 An imaging unit 14 is provided above the transport unit 12. This imaging means 14 is for photographing the surface of the TFT substrate 1 through the viewing window 25 of the photomask 21 and is a line camera having a plurality of light receiving elements arranged in a straight line in a direction crossing the arrow B direction. The central axis of the plurality of light receiving elements in the arrangement direction is arranged so as to coincide with the longitudinal central axis of the viewing window 25 of the photomask 21. Further, illumination means (not shown) is provided so that the imaging region of the imaging means 14 can be illuminated from above the TFT substrate 1. In FIG. 6, reference numeral 27 denotes a reflection mirror that bends the optical path of the imaging system.
上記フォトマスク２１を搬送ステージ１７の上面に平行な面内にて、矢印Ｂと交差する方向に移動可能にアライメント手段１５が設けられている。このアライメント手段１５は、フォトマスク２１を移動中のＴＦＴ基板１に対して位置合わせするものであり、電磁アクチュエータやモータ等を含んで構成された移動機構によりフォトマスク２１を矢印Ｂと交差する方向に移動させることができるようになっている。 An alignment means 15 is provided so that the photomask 21 can be moved in a direction crossing the arrow B in a plane parallel to the upper surface of the transfer stage 17. The alignment means 15 aligns the photomask 21 with respect to the moving TFT substrate 1, and a direction in which the photomask 21 intersects the arrow B by a moving mechanism including an electromagnetic actuator, a motor, and the like. It can be moved to.
上記搬送手段１２と、エキシマレーザ１８と、撮像手段１４と、アライメント手段１５とに電気的に接続して制御手段１６が設けられている。この制御手段１６は、搬送手段１２を制御してＴＦＴ基板１を矢印Ｂ方向に一定速度で搬送させ、エキシマレーザ１８を一定間隔で発光させるように制御し、撮像手段１４から入力する画像を処理して、ＴＦＴ基板１に予め設定された基準位置を検出すると共に、該基準位置とフォトマスク２１のアライメントマーク２６との間の水平距離を演算し、該水平距離が予め定められた距離となるようにアライメント手段１５を制御してフォトマスク２１を移動させるものである。 A control unit 16 is provided in electrical connection with the transport unit 12, excimer laser 18, imaging unit 14, and alignment unit 15. The control unit 16 controls the transport unit 12 to transport the TFT substrate 1 at a constant speed in the direction of arrow B, and controls the excimer laser 18 to emit light at regular intervals, and processes an image input from the imaging unit 14. Then, a reference position preset on the TFT substrate 1 is detected, and a horizontal distance between the reference position and the alignment mark 26 of the photomask 21 is calculated, and the horizontal distance becomes a predetermined distance. As described above, the photomask 21 is moved by controlling the alignment means 15.
このように構成されたレーザ加工装置を使用して、上記第５ステップは次のようにして実行される。
先ず、搬送手段１２の搬送ステージ１７上面に磁気チャックステージ９と一体化されたＴＦＴ基板１を、マスク用部材７がレーザ光Ｌの照射側となるようにすると共に、保持部材５の開口部４の長軸が矢印Ｂ方向と平行となるように位置決めして載置する。次に、搬送手段１２は、磁気チャックステージ９とＴＦＴ基板１とを一体的に搬送ステージ１７上に一定量だけ浮上させた状態で制御手段１６により制御されて矢印Ｂ方向に一定速度で搬送を開始する。
Using the thus configured laser processing apparatus, the fifth step is executed as follows.
First, the TFT substrate 1 integrated with the magnetic chuck stage 9 on the upper surface of the transfer stage 17 of the transfer means 12 is set so that the mask member 7 is on the irradiation side of the laser beam L, and the opening 4 of the holding member 5. Are positioned and placed so that their long axes are parallel to the arrow B direction. Next, the conveying means 12 is controlled by the control means 16 in a state where the magnetic chuck stage 9 and the TFT substrate 1 are integrally floated on the conveying stage 17 and conveyed at a constant speed in the direction of arrow B. Start.
ＴＦＴ基板１が搬送されて、フォトマスク２１の下側に達し、フォトマスク２１の覗き窓２５及び保持部材５の開口部４内に位置するフィルム６の部分を通して撮像手段１４によりＴＦＴ基板１に予め形成された矢印Ｂ方向と交差する例えばアノード電極２Ｒ〜２Ｂ或いは所定の箇所に設けたラインパターン等が検出されると、該アノード電極２Ｒ〜２Ｂ等が検出された時のＴＦＴ基板１の位置を基準にして制御手段１６によりＴＦＴ基板１の移動距離が演算される。そして、該移動距離が予め設定して保存された移動距離の目標値に合致し、ＴＦＴ基板１のＲ対応のアノード電極２Ｒがフォトマスク２１の開口２０の真下に達すると制御手段１６に制御されてエキシマレーザ１８がパルス発光する。 The TFT substrate 1 is conveyed, reaches the lower side of the photomask 21, and is previously applied to the TFT substrate 1 by the imaging means 14 through the viewing window 25 of the photomask 21 and the film 6 located in the opening 4 of the holding member 5. When, for example, the anode electrodes 2R to 2B intersecting the formed arrow B direction or a line pattern provided at a predetermined location is detected, the position of the TFT substrate 1 when the anode electrodes 2R to 2B etc. are detected is determined. Based on the reference, the moving distance of the TFT substrate 1 is calculated by the control means 16. Then, when the moving distance matches the preset target value of the moving distance and the anode electrode 2R corresponding to R of the TFT substrate 1 reaches just below the opening 20 of the photomask 21, it is controlled by the control means 16. The excimer laser 18 emits pulses.
一方、ＴＦＴ基板１の移動中は、ＴＦＴ基板１に予め形成された矢印Ｂ方向に平行な例えば複数のゲート線のうち、予め選択されたアライメントの基準となるゲート線の縁部を撮像手段１４により検出し、同時に検出したフォトマスク２１のアライメントマーク２６との間の水平距離を制御手段１６により演算し、該距離が予め設定して保存されたアライメントの目標値と合致するようにアライメント手段１５を制御してフォトマスク２１を矢印Ｂと交差する方向に移動させる。これにより、矢印Ｂと交差する方向に振れながら移動するＴＦＴ基板１にフォトマスク２１を追従させて位置合わせすることができる。 On the other hand, during the movement of the TFT substrate 1, the edge of the gate line serving as a reference for the alignment selected in advance among the plurality of gate lines, for example, parallel to the arrow B direction formed in advance on the TFT substrate 1, is imaged. The control means 16 calculates the horizontal distance between the photomask 21 and the alignment mark 26 detected simultaneously, and the alignment means 15 matches the preset target value stored. To move the photomask 21 in the direction intersecting the arrow B. As a result, the photomask 21 can be aligned with the TFT substrate 1 that moves while swinging in the direction intersecting the arrow B.
上述したように、ＴＦＴ基板１のＲ対応のアノード電極２Ｒがフォトマスク２１の開口２０の真下に達するとエキシマレーザ１８が発光し、レーザ光Ｌがフォトマスク２１の照射領域に照射される。さらに、フォトマスク２１の開口２０を通過したレーザ光Ｌは、マイクロレンズ２４によりＴＦＴ基板１のＲ対応のアノード電極２Ｒ上に集光される。そして、該アノード電極２Ｒ上のフィルム６がレーザ光Ｌによってアブレーションされて除去され、開口パターン１０が形成される。以後、搬送方向後続のＲ対応のアノード電極２Ｒがフォトマスク２１の開口２０の真下に達する毎にエキシマレーザ１８が発光し、アノード電極２Ｒ上のフィルム６がレーザ光Ｌによって除去され、アノード電極２Ｒ上に開口パターン１０を設けたマスク１１が形成される。なお、エキシマレーザ１８を連続発光させ、レーザ光Ｌの出力光軸側にシャッタを設けてＲ対応のアノード電極２Ｒがフォトマスク２１の開口２０の真下に達したときにシャッタを開くようにしてもよい。 As described above, when the anode electrode 2R corresponding to R of the TFT substrate 1 reaches just below the opening 20 of the photomask 21, the excimer laser 18 emits light, and the irradiation region of the photomask 21 is irradiated with the laser light L. Further, the laser light L that has passed through the opening 20 of the photomask 21 is condensed on the anode electrode 2R corresponding to R of the TFT substrate 1 by the microlens 24. Then, the film 6 on the anode electrode 2R is ablated and removed by the laser light L, and an opening pattern 10 is formed. Thereafter, every time the anode electrode 2R corresponding to R following in the transport direction reaches directly below the opening 20 of the photomask 21, the excimer laser 18 emits light, the film 6 on the anode electrode 2R is removed by the laser light L, and the anode electrode 2R A mask 11 having an opening pattern 10 formed thereon is formed. The excimer laser 18 emits light continuously, and a shutter is provided on the output optical axis side of the laser beam L so that the shutter is opened when the R-compatible anode electrode 2R reaches just below the opening 20 of the photomask 21. Good.
なお、以上の説明においては、フォトマスク２１に複数の開口２０が１列に並べて設けられている場合について述べたが、上記複数の開口２０を矢印Ｂ方向に、同方向の画素ピッチの整数倍のピッチで複数列設けてもよい。この場合、Ｒ対応のアノード電極２Ｒ上のフィルム６が複数回のレーザ照射により除去されることになる。 In the above description, the case where the photomask 21 is provided with a plurality of openings 20 arranged in a row has been described. However, the plurality of openings 20 is an integer multiple of the pixel pitch in the same direction in the arrow B direction. A plurality of rows may be provided at the pitch. In this case, the film 6 on the anode electrode 2R corresponding to R is removed by multiple laser irradiations.
また、以上の説明においては、複数の開口２０に対応してマイクロレンズ２４が設けられている場合について述べたが、複数の開口２０に跨って長軸を有するシリンドリカルレンズであってもよい。この場合、開口２０は、上記複数の開口２０を連結した一つのストライプ状の開口として形成されるとよい。これにより、光束断面が細長状のレーザ光Ｌを生成してフィルム６にストライプ状の開口パターン１０を形成することができる。なお、この場合は、ＴＦＴ基板１は、マスク用部材７の開口４の長軸が矢印Ｂと交差するように搬送ステージ１７上に載置されて搬送される。そして、複数のＲ対応のアノード電極２Ｒが上記ストライプ状の開口２０の真下に達する毎に、細長状のレーザ光Ｌを照射することにより、上記ストライプ状の開口パターン１０を複数のＲ対応のアノード電極２Ｒを跨って形成することができる。その結果、複数のＲ対応のアノード電極２Ｒを跨って、その上にストライプ状のＲ有機ＥＬ層３Ｒ（薄膜パターン）を形成することができる。 In the above description, the case where the microlenses 24 are provided corresponding to the plurality of openings 20 has been described, but a cylindrical lens having a long axis across the plurality of openings 20 may be used. In this case, the opening 20 may be formed as one stripe-like opening connecting the plurality of openings 20. As a result, the laser beam L having an elongated light beam cross section can be generated to form the stripe-shaped opening pattern 10 in the film 6. In this case, the TFT substrate 1 is placed and transported on the transport stage 17 so that the long axis of the opening 4 of the mask member 7 intersects the arrow B. Then, each time the plurality of R-compatible anode electrodes 2R reach just below the stripe-shaped openings 20, the strip-shaped opening pattern 10 is irradiated with the plurality of R-compatible anodes by irradiating the elongated laser beam L. It can be formed across the electrode 2R. As a result, a striped R organic EL layer 3R (thin film pattern) can be formed on a plurality of R-compatible anode electrodes 2R.
さらに、上記レーザ加工装置は、ＴＦＴ基板１を一定速度で移動しながら、レーザ光Ｌを照射してフィルム６に開口パターン１０を形成する場合について説明したが、本発明はこれに限られず、レーザ加工装置は、ＴＦＴ基板１を矢印Ｂ方向にステップ移動しながら、又はＴＦＴ基板１を基板面に平行な面内を２次元方向にステップ移動しながら、レーザ光Ｌを照射してフィルム６に開口パターン１０を形成するものであってもよいし、ＴＦＴ基板１の複数のアノード電極に対応して複数のマイクロレンズ２４を設けたフォトマスク２１を介してレーザ光Ｌを照射してフィルム６に開口パターン１０を一括形成するものであってもよい。 Furthermore, the laser processing apparatus has been described with respect to the case where the opening pattern 10 is formed on the film 6 by irradiating the laser beam L while moving the TFT substrate 1 at a constant speed. The processing apparatus opens the film 6 by irradiating the laser beam L while moving the TFT substrate 1 stepwise in the direction of arrow B or moving the TFT substrate 1 stepwise in a plane parallel to the substrate surface. The pattern 10 may be formed, or the film 6 is opened by irradiating the laser beam L through the photomask 21 provided with a plurality of microlenses 24 corresponding to the plurality of anode electrodes of the TFT substrate 1. The pattern 10 may be formed collectively.
さらにまた、レーザ光Ｌによる開口パターン１０の形成は、一定深さまでは例えば１〜２０Ｊ／ｃｍ２と比較的高いエネルギー密度のレーザ光Ｌを照射して一気に加工し、残りの部分はエネルギー強度を０．１Ｊ／ｃｍ２以下、望ましくは０．０６Ｊ／ｃｍ２以下に下げたレーザ光Ｌを照射してゆっくり加工するようにするとよい。これにより、開口パターン１０の形成時間を短縮するのと同時に、アノード電極がレーザ光Ｌによってダメージを受けるのを抑制することができる。 Furthermore, the formation of the opening pattern 10 by the laser beam L is performed at once by irradiating the laser beam L having a relatively high energy density of, for example, 1 to 20 J / cm 2 at a certain depth, and the remaining portion has the energy intensity. The laser beam L is lowered to 0.1 J / cm 2 or less, desirably 0.06 J / cm 2 or less, and the processing is performed slowly. Thereby, the formation time of the opening pattern 10 can be shortened, and at the same time, the anode electrode can be prevented from being damaged by the laser light L.
第６ステップにおいては、図１（ｆ）に示すように、例えば真空蒸着装置を使用してＴＦＴ基板１のＲ対応のアノード電極２Ｒ上にマスク１１の開口パターン１０を介して前述と同様に正孔注入層、正孔輸送層、Ｒ発光層、電子輸送層等の積層構造となるように順次成膜してＲ有機ＥＬ層３Ｒを成膜形成し、さらに、該Ｒ有機ＥＬ層３Ｒ上にＩＴＯ膜からなる透明電極層２８を蒸着又はスパッタリング等の公知の成膜技術を使用して成膜形成する。 In the sixth step, as shown in FIG. 1 (f), for example, using a vacuum deposition apparatus, the positive electrode is formed on the R corresponding anode electrode 2R of the TFT substrate 1 through the opening pattern 10 of the mask 11 as described above. A R organic EL layer 3R is formed by sequentially forming a laminated structure of a hole injection layer, a hole transport layer, an R light emitting layer, an electron transport layer, and the like, and further on the R organic EL layer 3R. The transparent electrode layer 28 made of an ITO film is formed using a known film forming technique such as vapor deposition or sputtering.
第７ステップにおいては、図１（ｇ）に示すように、磁気チャックステージ９の静磁界発生手段８を下降させた状態で、マスク１１の縁部を同図に矢印Ａで示す上方に持ち上げてマスク１１のフィルム６をＴＦＴ基板１面から機械的に剥離する。これにより、Ｒ対応のアノード電極２Ｒ上にＲ有機ＥＬ層３Ｒが残りＲ有機ＥＬ層形成工程が終了する。 In the seventh step, as shown in FIG. 1G, with the static magnetic field generating means 8 of the magnetic chuck stage 9 lowered, the edge of the mask 11 is lifted upward as indicated by the arrow A in FIG. The film 6 of the mask 11 is mechanically peeled from the surface of the TFT substrate 1. As a result, the R organic EL layer 3R remains on the R corresponding anode electrode 2R, and the R organic EL layer forming step is completed.
図３は、Ｇ有機ＥＬ層形成工程を示す断面説明図である。このＧ有機ＥＬ層形成工程は、磁性体を含んで構成され、Ｇ有機ＥＬ層３Ｇのパターンよりも形状寸法の大きい開口部４を形成した保持部材５に可視光を透過する樹脂製のフィルム６を保持してマスク用部材７を形成するステップ（同図（ａ）参照）と、内部に静磁界発生手段８を備えた磁気チャックステージ９上にＴＦＴ基板１を載置するステップ（同図（ｂ）参照）と、ＴＦＴ基板１上のＧ対応のアノード電極２Ｇが保持部材５の上記開口部４内に位置するようにマスク用部材７の保持部材５とＴＦＴ基板１とを位置合わせしてマスク用部材７をＴＦＴ基板１上に載置するステップ（同図（ｃ））と、上記静磁界発生手段８の静磁界により保持部材５をＴＦＴ基板１上に吸着し、フィルム６をＴＦＴ基板１の上面に密着させるステップ（同図（ｄ））と、保持部材５側からＴＦＴ基板１上のＧ対応のアノード電極２Ｇに対応したフィルム６部分にレーザ光Ｌを照射し、当該部分のフィルム６にＧ有機ＥＬ層３Ｇのパターンと形状寸法の同じ開口パターン１０を設けてマスク１１を形成するステップ（同図（ｅ））と、ＴＦＴ基板１上のＧ対応のアノード電極２Ｇ上にマスク１１の開口パターン１０を介してＧ有機ＥＬ層３Ｇを成膜形成するステップ（同図（ｆ））と、上記マスク１１を同図に示す矢印Ａ方向に持ち上げて剥離するステップ（同図（ｇ））と、を実行するもので、Ｒ有機ＥＬ層形成工程と同様にして行われる。 FIG. 3 is a cross-sectional explanatory view showing a G organic EL layer forming step. The G organic EL layer forming step includes a magnetic material, and is a resin film 6 that transmits visible light to the holding member 5 formed with the opening 4 having a shape dimension larger than the pattern of the G organic EL layer 3G. and holds the step of forming a mask member 7 (see FIG. (a)), placing the TFT substrate 1 on the magnetic chuck stage 9 with the static magnetic field generating means 8 therein step (FIG. ( b)), and the holding member 5 of the mask member 7 and the TFT substrate 1 are aligned so that the anode electrode 2G corresponding to G on the TFT substrate 1 is located in the opening 4 of the holding member 5. The step of placing the mask member 7 on the TFT substrate 1 (FIG. 2C), the holding member 5 is adsorbed on the TFT substrate 1 by the static magnetic field of the static magnetic field generating means 8, and the film 6 is attached to the TFT substrate. A step of closely contacting the upper surface of 1 ( Figure (d)) and the laser beam L is irradiated to the G film 6 portions corresponding to the anode electrode 2G of the corresponding on the TFT substrate 1 from the holding member 5 side, the film 6 of the portion of the G organic EL layer 3G pattern A step of forming a mask 11 by providing an opening pattern 10 having the same shape and dimension (FIG. 5E), and an organic G layer on the anode electrode 2G corresponding to G on the TFT substrate 1 through the opening pattern 10 of the mask 11. A step of forming an EL layer 3G (FIG. (F)) and a step of lifting the mask 11 in the direction of arrow A shown in FIG. It is performed in the same manner as the R organic EL layer forming step.
図４は、Ｂ有機ＥＬ層形成工程を示す断面説明図である。このＢ有機ＥＬ層形成工程は、磁性体を含んで構成され、Ｂ有機ＥＬ層３Ｂのパターンよりも形状寸法の大きい開口部４を形成した保持部材５に可視光を透過する樹脂製のフィルム６を保持してマスク用部材７を形成するステップ（同図（ａ）参照）と、内部に静磁界発生手段８を備えた磁気チャックステージ９上にＴＦＴ基板１を載置するステップ（同図（ｂ）参照）と、ＴＦＴ基板１上のＢ対応のアノード電極２Ｂが保持部材５の上記開口部４内に位置するようにマスク用部材７の保持部材５とＴＦＴ基板１とを位置合わせしてマスク用部材７をＴＦＴ基板１上に載置するステップ（同図（ｃ））と、上記静磁界発生手段８の静磁界により保持部材５をＴＦＴ基板１上に吸着し、フィルム６をＴＦＴ基板１の上面に密着させるステップ（同図（ｄ））と、保持部材５側からＴＦＴ基板１上のＢ対応のアノード電極２Ｂに対応したフィルム６部分にレーザ光Ｌを照射し、当該部分のフィルム６にＢ有機ＥＬ層３Ｂのパターンと形状寸法の同じ開口パターン１０を設けてマスク１１を形成するステップ（同図（ｅ））と、ＴＦＴ基板１上のＢ対応のアノード電極２Ｂ上にマスク１１の開口パターン１０を介してＢ有機ＥＬ層３Ｂを成膜形成するステップ（同図（ｆ））と、上記マスク１１を同図に示す矢印Ａ方向に持ち上げて剥離するステップ（同図（ｇ））と、を実行するもので、Ｒ有機ＥＬ層又はＧ有機ＥＬ層形成工程と同様にして行われる。 FIG. 4 is a cross-sectional explanatory view showing the B organic EL layer forming step. This B organic EL layer forming step includes a magnetic material, and is a resin film 6 that transmits visible light to the holding member 5 that is formed with the opening 4 having a larger dimension than the pattern of the B organic EL layer 3B. and holds the step of forming a mask member 7 (see FIG. (a)), placing the TFT substrate 1 on the magnetic chuck stage 9 with the static magnetic field generating means 8 therein step (FIG. ( b)), and the holding member 5 of the mask member 7 and the TFT substrate 1 are aligned so that the anode electrode 2B corresponding to B on the TFT substrate 1 is positioned in the opening 4 of the holding member 5. The step of placing the mask member 7 on the TFT substrate 1 (FIG. 2C), the holding member 5 is adsorbed on the TFT substrate 1 by the static magnetic field of the static magnetic field generating means 8, and the film 6 is attached to the TFT substrate. A step of closely contacting the upper surface of 1 ( Figure and (d)), the laser beam L is irradiated to the film 6 a portion corresponding to B corresponding anode electrode 2B on the TFT substrate 1 from the holding member 5 side, the pattern of the B organic EL layer 3B on the film 6 of the partial Forming a mask 11 by providing an opening pattern 10 having the same shape and dimension (FIG. 4E), and forming a B organic layer on the B corresponding anode electrode 2B on the TFT substrate 1 through the opening pattern 10 of the mask 11 A step of forming an EL layer 3B (FIG. (F)) and a step of lifting the mask 11 in the direction of arrow A shown in FIG. It is performed in the same manner as the R organic EL layer or G organic EL layer forming step.
図５は、カソード電極形成工程を示す断面説明図である。このカソード電極形成工程は、ＴＦＴ基板１の各アノード電極２Ｒ，２Ｇ，２Ｂ上に形成された有機ＥＬ層３Ｒ，３Ｇ，３Ｂ上の透明電極層を電気的に接続するためのものであり、図５に示すように、先ず、公知の成膜技術を使用してＴＦＴ基板１上面を覆ってＩＴＯ(Indium Tin Oxide)膜からなるカソード電極２９（透明電極）を形成する（同図（ａ）参照）。続いて、同様にしてカソード電極２９を覆って絶縁性の保護層３０を成膜形成し（同図（ｂ）参照）、さらにその上に例えばＵＶ硬化性の樹脂を例えばスピンコート又はスプレー塗布して接着層３１を形成する（同図（ｃ）参照）。そして、上記接着層３１上に透明な対向基板３２を密着させた後、対向基板３２側から紫外線を照射して接着層３１を硬化させ、対向基板３２をＴＦＴ基板１に接合する（同図（ｄ）参照）。これにより、有機ＥＬ表示装置が完成する。 FIG. 5 is a cross-sectional explanatory view showing a cathode electrode forming step. This cathode electrode forming step is for electrically connecting the transparent electrode layers on the organic EL layers 3R, 3G, 3B formed on the anode electrodes 2R, 2G, 2B of the TFT substrate 1, As shown in FIG. 5, first, a cathode electrode 29 (transparent electrode) made of an ITO (Indium Tin Oxide) film is formed by covering the upper surface of the TFT substrate 1 using a known film forming technique (see FIG. 5A). ). Subsequently, an insulating protective layer 30 is formed in a similar manner so as to cover the cathode electrode 29 (see FIG. 5B), and further, for example, a UV curable resin is applied, for example, by spin coating or spraying. Then, the adhesive layer 31 is formed (see FIG. 3C). Then, after a transparent counter substrate 32 is brought into close contact with the adhesive layer 31, the adhesive layer 31 is cured by irradiating ultraviolet rays from the counter substrate 32 side, and the counter substrate 32 is bonded to the TFT substrate 1 (FIG. d)). Thereby, an organic EL display device is completed.
図８は、有機ＥＬ層形成工程において使用するマスクの形成過程の変形例を示す断面説明図である。ここでは、１例として、Ｒ有機ＥＬ層用のマスクの形成過程を説明する。
先ず、同図（ａ）に示すように、磁気チャックステージ９上に載置されたＴＦＴ基板１の上面を覆うように可視光を透過する、例えばフッ素系樹脂やカバーガラス等のレーザ光Ｌを吸収し難い透明部材３３を置く。
FIG. 8 is a cross-sectional explanatory view showing a modification of the process of forming a mask used in the organic EL layer forming process. Here, as an example, a process of forming a mask for the R organic EL layer will be described.
First, as shown in FIG. 2A, laser light L such as fluorine resin or cover glass that transmits visible light so as to cover the upper surface of the TFT substrate 1 placed on the magnetic chuck stage 9 is used. A transparent member 33 that is difficult to absorb is placed.
次に、図８（ｂ）に示すように、保持部材５の開口部４内にＴＦＴ基板１のＲ対応のアノード電極２Ｒが位置するように位置合わせした後、マスク用部材７のフィルム６を上記透明部材３３上に密着させる。そして、その状態で、同図（ｃ）に示すように磁気チャックステージ９の静磁界により保持部材５を吸着してフィルム６及び透明部材３３を保持部材５とＴＦＴ基板１１との間に挟持する。 Next, as shown in FIG. 8 (b), after aligning so that the anode electrode 2 </ b> R corresponding to R of the TFT substrate 1 is positioned in the opening 4 of the holding member 5, the film 6 of the mask member 7 is attached. It sticks on the transparent member 33. In this state, the holding member 5 is attracted by the static magnetic field of the magnetic chuck stage 9 and the film 6 and the transparent member 33 are sandwiched between the holding member 5 and the TFT substrate 11 as shown in FIG. .
続いて、図８（ｄ）に示すように、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒに対応したフィルム６部分にレーザ光Ｌを照射し、当該部分のフィルム６にＲ有機ＥＬ層３Ｒのパターンと形状寸法の同じ開口パターン１０を設けてマスク１１を形成する。このとき、透明部材３３は、レーザ光Ｌを吸収しないためレーザ加工されない。 Subsequently, as shown in FIG. 8D, the film 6 corresponding to the anode electrode 2R corresponding to R on the TFT substrate 1 is irradiated with the laser light L, and the film 6 of the portion is irradiated with the R organic EL layer 3R. A mask 11 is formed by providing an opening pattern 10 having the same shape and dimensions as the pattern. At this time, the transparent member 33 is not laser processed because it does not absorb the laser light L.
次いで、図８（ｅ）に示すように、マスク１１上に例えば一定の電圧を印加可能に構成された静電チャックステージ３４を載置し、該静電チャックステージ３４によりマスク１１のフィルム６を静電吸着すると共に、磁気チャックステージ９の静磁界をオフする。そして、静電チャックステージ３４にマスク１１を吸着した状態で、同図に示す矢印Ａ方向に垂直に静電チャックステージ３４を持ち上げ、同図に示す矢印Ｃ方向に透明部材３３を引き抜く。 Next, as shown in FIG. 8E, for example, an electrostatic chuck stage 34 configured to be able to apply a constant voltage is placed on the mask 11, and the film 6 of the mask 11 is placed on the electrostatic chuck stage 34. While electrostatically attracting, the static magnetic field of the magnetic chuck stage 9 is turned off. Then, with the mask 11 being attracted to the electrostatic chuck stage 34, the electrostatic chuck stage 34 is lifted perpendicularly to the direction of arrow A shown in the figure, and the transparent member 33 is pulled out in the direction of arrow C shown in the figure.
その後、図８（ｆ）に示すように、再び、静電チャックステージ３４を矢印Ｄ方向に垂直に降ろしてマスク１１をＴＦＴ基板１上に置く。そして、静電チャックステージ３４をオフすると共に磁気チャックステージ９をオンし、同図（ｇ）に示すように磁力によりマスク１１の保持部材５を吸着してフィルム６をＴＦＴ基板１の上面に密着させた後、静電チャックステージ３４を取り除く。これにより、マスク１１の形成過程は終了する。 Thereafter, as shown in FIG. 8 (f), the electrostatic chuck stage 34 is again lowered vertically in the direction of arrow D, and the mask 11 is placed on the TFT substrate 1. Then, the electrostatic chuck stage 34 is turned off and the magnetic chuck stage 9 is turned on, and the holding member 5 of the mask 11 is adsorbed by a magnetic force as shown in FIG. Then, the electrostatic chuck stage 34 is removed. Thereby, the formation process of the mask 11 is completed.
以降、Ｒ有機ＥＬ層３Ｒの形成は、上記マスク１１を使用して、図１（ｆ），（ｇ）と同様にして行われる。さらに、Ｇ有機ＥＬ層３Ｇ及びＢ有機ＥＬ層３Ｂの形成も同様にして形成されたマスクを使用して行うことができる。 Thereafter, the formation of the R organic EL layer 3R is performed using the mask 11 in the same manner as in FIGS. Furthermore, the G organic EL layer 3G and the B organic EL layer 3B can be formed using a mask formed in the same manner.
上述のように、フィルム６とＴＦＴ基板１との間に可視光を透過する透明部材３３を介在させた状態でレーザ光Ｌを照射し、フィルム６をアブレーションして開口パターン１０を形成すれば、アブレーションによりフィルム６の残渣が発生した場合でも、残渣が透明部材３３によって完全にブロックされてアノード電極２Ｒ〜２Ｂ上に付着することがない。したがって、アノード電極２Ｒ〜２Ｂと有機ＥＬ層３Ｒ〜３Ｂとの間の接触抵抗が上昇したり、残渣が有機ＥＬ層３Ｒ〜３Ｂにダメージを与えたりして有機ＥＬ層３Ｒ〜３Ｂの発光特性を低下させるおそれがない。 As described above, if the transparent member 33 that transmits visible light is interposed between the film 6 and the TFT substrate 1, the laser beam L is irradiated, and the film 6 is ablated to form the opening pattern 10. Even when the residue of the film 6 is generated by ablation, the residue is not completely blocked by the transparent member 33 and attached to the anode electrodes 2R to 2B. Accordingly, the contact resistance between the anode electrodes 2R to 2B and the organic EL layers 3R to 3B is increased, or the residue damages the organic EL layers 3R to 3B, so that the light emission characteristics of the organic EL layers 3R to 3B are improved. There is no risk of lowering.
なお、以上の説明においては、透明部材３３がレーザ光Ｌを吸収し難い部材である場合について述べたが、本発明はこれに限られず、透明部材３３は、フィルム６の厚みに対して十分に厚いものであれば、ポリイミド等のレーザ光Ｌを吸収し易い部材であってもよい。この場合は、フィルム６に対するレーザ加工が完了した後、透明部材３３のレーザ加工が未終了の段階でレーザ光Ｌの照射を停止すればよい。 In the above description, the case where the transparent member 33 is a member that hardly absorbs the laser beam L has been described. However, the present invention is not limited to this, and the transparent member 33 is sufficiently thick with respect to the thickness of the film 6. As long as it is thick, it may be a member that easily absorbs the laser beam L such as polyimide. In this case, after the laser processing on the film 6 is completed, the irradiation of the laser beam L may be stopped when the laser processing of the transparent member 33 is not completed.
また、上記実施形態においては、各有機ＥＬ層３Ｒ〜３Ｂ形成時に、有機ＥＬ層３Ｒ〜３Ｂ上にさらに透明電極層２８を形成する場合について説明したが、本発明はこれに限られず、有機ＥＬ層３Ｒ〜３Ｂ形成時には透明電極層２８を形成しなくてもよい。 Moreover, in the said embodiment, although the case where the transparent electrode layer 28 was further formed on organic EL layer 3R-3B at the time of formation of each organic EL layer 3R-3B was demonstrated, this invention is not limited to this, Organic EL The transparent electrode layer 28 may not be formed when forming the layers 3R to 3B.
さらに、上記実施形態においては、静磁界発生手段８が永久磁石である場合について説明したが、本発明はこれに限られず、静磁界発生手段８は電磁石であってもよい。 Furthermore, although the case where the static magnetic field generation means 8 is a permanent magnet has been described in the above embodiment, the present invention is not limited to this, and the static magnetic field generation means 8 may be an electromagnet.
また、上記実施形態においては、保持部材５が磁性体で構成されている場合について説明したが、本発明はこれに限られず、保持部材５は非磁性体であってもよい。この場合、フィルム６をＴＦＴ基板１と保持部材５との間に挟持するためには、磁気チャックステージ９に替えて、一定の電圧を印加可能に構成された静電チャックステージを使用し、該静電チャックステージ上にＴＦＴ基板１を載置した後、該ステージに電圧を印加して保持部材５をＴＦＴ基板１上に静電吸着しフィルム６を挟持するとよい。 Moreover, in the said embodiment, although the case where the holding member 5 was comprised with the magnetic body was demonstrated, this invention is not limited to this, The holding member 5 may be a nonmagnetic body. In this case, in order to sandwich the film 6 between the TFT substrate 1 and the holding member 5, instead of the magnetic chuck stage 9, an electrostatic chuck stage configured to be able to apply a constant voltage is used. After the TFT substrate 1 is placed on the electrostatic chuck stage, a voltage is applied to the stage, and the holding member 5 is electrostatically adsorbed on the TFT substrate 1 so as to sandwich the film 6.
さらに、上記実施形態においては、保持部材５に粘着剤を介してフィルム６を保持する場合について説明したが、本発明はこれに限られず、保持部材５にフィルム６を熱圧着により被着させてもよい。この場合、フィルム６が熱可塑性樹脂であるときには、保持部材５の開口部４をフィルム６で埋めることができる。又は、フィルム６を保持部材５には接着せず、ＴＦＴ基板１と保持部材５との間に挟み込んで使用してもよい。 Furthermore, in the said embodiment, although the case where the film 6 was hold | maintained via the adhesive in the holding member 5 was demonstrated, this invention is not restricted to this, The film 6 is made to adhere to the holding member 5 by thermocompression bonding. Also good. In this case, when the film 6 is a thermoplastic resin, the opening 4 of the holding member 5 can be filled with the film 6. Alternatively, the film 6 may be used by being sandwiched between the TFT substrate 1 and the holding member 5 without being bonded to the holding member 5.
そして、本発明は、有機ＥＬ表示装置の製造方法に限られず、高精細な薄膜パターンを形成しようとするものであれば、液晶表示装置のカラーフィルターの形成、又は半導体基板の配線パターンの形成等、如何なるものにも適用することができる。 And this invention is not restricted to the manufacturing method of an organic electroluminescent display device, If it is going to form a high-definition thin film pattern, formation of the color filter of a liquid crystal display device, formation of the wiring pattern of a semiconductor substrate, etc. It can be applied to anything.
１…ＴＦＴ基板（基板）
２Ｒ…Ｒ対応のアノード電極（薄膜パターン形成領域）
２Ｇ…Ｇ対応のアノード電極（薄膜パターン形成領域）
２Ｂ…Ｂ対応のアノード電極（薄膜パターン形成領域）
３Ｒ…Ｒ有機ＥＬ層
３Ｇ…Ｇ有機ＥＬ層
３Ｂ…Ｂ有機ＥＬ層
４…開口部
５…保持部材
６…フィルム
７…マスク用部材
８…静磁界発生手段
９…磁気チャックステージ（ステージ）
１０…開口パターン
１１…マスク
２８…透明電極層
３３…透明部材
Ｌ…レーザ光
1 ... TFT substrate (substrate)
2R ... R-compatible anode electrode (thin film pattern formation region)
2G ... G-compatible anode electrode (thin film pattern formation region)
2B ... B-compatible anode electrode (thin film pattern formation region)
3R ... R organic EL layer 3G ... G organic EL layer 3B ... B organic EL layer 4 ... opening 5 ... holding member 6 ... film 7 ... mask member 8 ... static magnetic field generating means 9 ... magnetic chuck stage (stage)
DESCRIPTION OF SYMBOLS 10 ... Opening pattern 11 ... Mask 28 ... Transparent electrode layer 33 ... Transparent member L ... Laser beam
Claims (16)
平板に前記薄膜パターンよりも形状寸法の大きい複数の開口部を形成した保持部材の一面に配置された可視光を透過する樹脂製のフィルムを通して前記基板上を観察しながら、前記基板上に予め定められた複数の薄膜パターン形成領域が夫々前記開口部内に位置するように前記保持部材と前記基板とを位置合わせした状態で、前記保持部材と前記基板との間に前記フィルムを挟持するステップと、
前記保持部材側から、前記薄膜パターン形成領域に対応した前記フィルム部分にレーザ光を照射し、当該部分の前記フィルムに前記薄膜パターンと形状寸法の同じ複数の開口パターンを設けてマスクを形成するステップと、
前記基板上の前記薄膜パターン形成領域に前記マスクの前記開口パターンを介して成膜するステップと、
前記マスクを剥離するステップと、
を行うことを特徴とする薄膜パターン形成方法。 A thin film pattern forming method for forming a plurality of thin film patterns on a substrate,
Predetermining on the substrate while observing the substrate through a resin film that transmits visible light disposed on one surface of a holding member in which a plurality of openings having a shape dimension larger than the thin film pattern is formed on a flat plate Sandwiching the film between the holding member and the substrate in a state where the holding member and the substrate are aligned such that the plurality of thin film pattern forming regions are positioned in the opening, respectively,
A step of irradiating the film portion corresponding to the thin film pattern formation region with laser light from the holding member side, and providing a plurality of opening patterns having the same shape and dimensions as the thin film pattern on the film of the portion to form a mask When,
Depositing the thin film pattern forming region on the substrate through the opening pattern of the mask;
Peeling the mask;
A thin film pattern forming method comprising:
前記透明部材は、前記マスクを形成するステップと前記成膜ステップとの間で抜き取られる、
ことを特徴とする請求項２又は３記載の薄膜パターン形成方法。 In the step of sandwiching the film, a transparent member that transmits visible light is interposed between the film and the substrate,
The transparent member is extracted between the step of forming the mask and the film forming step.
4. The thin film pattern forming method according to claim 2, wherein the thin film pattern is formed.
前記フィルムを挟持するステップにおいては、内部に静磁界発生手段を備えたステージ上に前記基板を載置した後、前記静磁界発生手段の静磁界により前記保持部材を前記基板上に吸着して前記フィルムを挟持することを特徴とする請求項１〜４のいずれか１項に記載の薄膜パターン形成方法。 The holding member includes a magnetic body,
In the step of sandwiching the film, after the substrate is placed on a stage having a static magnetic field generating means therein, the holding member is attracted onto the substrate by the static magnetic field of the static magnetic field generating means, and The thin film pattern forming method according to claim 1, wherein a film is sandwiched.
前記フィルムを挟持するステップにおいては、一定の電圧を印加可能に構成されたステージ上に前記基板を載置した後、前記ステージに電圧を印加し、前記保持部材を前記基板上に静電吸着して前記フィルムを挟持することを特徴とする請求項１〜４のいずれか１項に記載の薄膜パターン形成方法。 The holding member includes a non-magnetic material,
In the step of sandwiching the film, after placing the substrate on a stage configured to be able to apply a constant voltage, a voltage is applied to the stage, and the holding member is electrostatically adsorbed onto the substrate. The thin film pattern forming method according to claim 1, wherein the film is sandwiched.
前記基板上に予め定められた複数の薄膜パターン形成領域に対応して前記薄膜パターンよりも形状の大きい細長状の複数列の開口部を貫通させて形成した磁性金属板の保持部材の一面に、前記開口部を通して前記基板上を観察可能にした可視光を透過する樹脂製のフィルムを保持してマスク用部材を形成し、前記フィルムを通して前記基板上を観察しながら、前記複数の薄膜パターン形成領域が夫々前記開口部内に位置するように前記マスク用部材の前記保持部材と前記基板とを位置合わせした状態で、磁界により前記保持部材を前記基板側に吸着して前記保持部材と前記基板との間に前記フィルムを挟持する工程と、
前記保持部材側からレーザ光を照射し、前記基板上の前記複数の薄膜パターン形成領域に対応して前記保持部材の複数列の前記開口部内の前記フィルムに夫々、前記薄膜パターンと形状寸法の同じ複数の開口パターンを一列に並べて形成する工程と、
を行うことを特徴とするマスクの製造方法。 A method of manufacturing a mask for forming a plurality of thin film patterns on a substrate,
On one surface of the holding member of the magnetic metal plate formed by penetrating a plurality of elongated openings having a shape larger than the thin film pattern corresponding to a plurality of predetermined thin film pattern forming regions on the substrate, A plurality of thin film pattern formation regions are formed while holding a resin film that transmits visible light through the opening and transmitting a resin film that transmits visible light and observing the substrate through the film. In the state where the holding member of the mask member and the substrate are aligned so that each of the holding member and the substrate is positioned in the opening, the holding member is attracted to the substrate side by a magnetic field, and the holding member and the substrate are Sandwiching the film in between,
Laser light is irradiated from the holding member side, and the film in the openings in the plurality of rows of the holding member corresponding to the plurality of thin film pattern forming regions on the substrate has the same shape and dimensions as the thin film pattern, respectively. Forming a plurality of opening patterns in a line; and
A method for manufacturing a mask, characterized in that:
平板に前記有機ＥＬ層のパターンよりも形状寸法の大きい開口部を形成した保持部材の一面に配置された可視光を透過する樹脂製のフィルムを通して前記ＴＦＴ基板上を観察しながら、前記保持部材と前記ＴＦＴ基板とを前記ＴＦＴ基板上の特定色のアノード電極が前記開口部内に位置するように位置合わせした状態で、前記保持部材と前記ＴＦＴ基板との間に前記フィルムを挟持するステップと、
前記保持部材側から、前記ＴＥＴ基板上の前記特定色のアノード電極に対応した前記フィルム部分にレーザ光を照射し、当該部分の前記フィルムに前記有機ＥＬ層のパターンと形状寸法の同じ開口パターンを設けてマスクを形成するステップと、
前記ＴＦＴ基板上の前記特定色のアノード電極上に前記マスクの前記開口パターンを介して特定色の有機ＥＬ層を成膜形成するステップと、
前記マスクを剥離するステップと、
を含むことを特徴とする有機ＥＬ表示装置の製造方法。 An organic EL display device manufacturing method for manufacturing an organic EL display device by forming an organic EL layer of a corresponding color on an anode electrode of a TFT substrate,
While observing the TFT substrate through a resin film that transmits visible light disposed on one surface of a holding member in which an opening having a shape larger than the pattern of the organic EL layer is formed on a flat plate, the holding member and Sandwiching the film between the holding member and the TFT substrate in a state where the TFT substrate and the specific color anode electrode on the TFT substrate are positioned in the opening,
From the holding member side, the film portion corresponding to the anode electrode of the specific color on the TET substrate is irradiated with laser light, and the opening pattern having the same shape and dimension as the pattern of the organic EL layer is applied to the film of the portion. Providing and forming a mask;
Forming a specific color organic EL layer on the anode electrode of the specific color on the TFT substrate through the opening pattern of the mask; and
Peeling the mask;
A method for producing an organic EL display device, comprising:
前記透明部材は、前記マスクを形成するステップと前記成膜ステップとの間で抜き取られる、
ことを特徴とする請求項１０又は１１記載の有機ＥＬ表示装置の製造方法。 In the step of sandwiching the film, a transparent member that transmits visible light is interposed between the film and the TFT substrate,
The transparent member is extracted between the step of forming the mask and the film forming step.
12. The method of manufacturing an organic EL display device according to claim 10 or 11,
前記開口パターンは、各列の前記開口部内に一列に並べて複数形成される、
ことを特徴とする請求項９〜１２のいずれか１項に記載の有機ＥＬ表示装置の製造方法。 The holding member is formed with a plurality of rows of elongated openings having a size including a plurality of anode electrodes of the specific color arranged in a row,
A plurality of the opening patterns are formed side by side in the openings in each row.
Method of manufacturing an organic EL display device according to any one of claims 9-12, characterized in that.
前記フィルムを挟持するステップにおいては、内部に静磁界発生手段を備えたステージ上に前記ＴＦＴ基板を載置した後、前記静磁界発生手段の静磁界により前記保持部材を前記ＴＦＴ基板上に吸着して前記フィルムを挟持することを特徴とする請求項９〜１３のいずれか１項に記載の有機ＥＬ表示装置の製造方法。 The holding member includes a magnetic body,
In the step of sandwiching the film, after placing the TFT substrate on a stage having a static magnetic field generating means therein, the holding member is adsorbed on the TFT substrate by the static magnetic field of the static magnetic field generating means. The method of manufacturing an organic EL display device according to any one of claims 9 to 13 , wherein the film is sandwiched.
前記フィルムを挟持するステップにおいては、一定の電圧を印加可能に構成されたステージ上に前記ＴＦＴ基板を載置した後、前記ステージに電圧を印加し、前記保持部材を前記ＴＦＴ基板上に静電吸着して前記フィルムを挟持することを特徴とする請求項９〜１３のいずれか１項に記載の有機ＥＬ表示装置の製造方法。 The holding member includes a non-magnetic material,
In the step of sandwiching the film, after placing the TFT substrate on a stage configured to be able to apply a constant voltage, a voltage is applied to the stage, and the holding member is electrostatically applied to the TFT substrate. method of manufacturing an organic EL display device according to any one of claims 9-13, characterized by sandwiching the film by suction.
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| PCT/JP2012/073617 WO2013039196A1 (en) | 2011-09-16 | 2012-09-14 | Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method |
| TW101133791A TWI555862B (en) | 2011-09-16 | 2012-09-14 | Evaporation mask, method for manufacturing the same and thinfilm pattern forming method |
| CN201280044893.9A CN103797149B (en) | 2011-09-16 | 2012-09-14 | Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method |
| US14/214,428 US9334556B2 (en) | 2011-09-16 | 2014-03-14 | Deposition mask, producing method therefor and forming method for thin film pattern |
| US14/746,727 US9586225B2 (en) | 2011-09-16 | 2015-06-22 | Deposition mask, producing method therefor and forming method for thin film pattern |
| US15/071,125 US9555434B2 (en) | 2011-09-16 | 2016-03-15 | Deposition mask, producing method therefor and forming method for thin film pattern |
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