JP5883548B2 - 三重項状態への直接注入を利用するoled - Google Patents
三重項状態への直接注入を利用するoled Download PDFInfo
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- JP5883548B2 JP5883548B2 JP2008504417A JP2008504417A JP5883548B2 JP 5883548 B2 JP5883548 B2 JP 5883548B2 JP 2008504417 A JP2008504417 A JP 2008504417A JP 2008504417 A JP2008504417 A JP 2008504417A JP 5883548 B2 JP5883548 B2 JP 5883548B2
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- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 123
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 121
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- 125000002524 organometallic group Chemical group 0.000 description 6
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- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical group C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 4
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- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical group C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 3
- SCZWJXTUYYSKGF-UHFFFAOYSA-N 5,12-dimethylquinolino[2,3-b]acridine-7,14-dione Chemical compound CN1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3N(C)C1=C2 SCZWJXTUYYSKGF-UHFFFAOYSA-N 0.000 description 3
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052747 lanthanoid Inorganic materials 0.000 description 3
- 150000002602 lanthanoids Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
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- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 2
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 2
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 2
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 235000013367 dietary fats Nutrition 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000010520 ghee Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
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- 238000001296 phosphorescence spectrum Methods 0.000 description 2
- 229960002796 polystyrene sulfonate Drugs 0.000 description 2
- 239000011970 polystyrene sulfonate Substances 0.000 description 2
- 238000010129 solution processing Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- RKVIAZWOECXCCM-UHFFFAOYSA-N 2-carbazol-9-yl-n,n-diphenylaniline Chemical compound C1=CC=CC=C1N(C=1C(=CC=CC=1)N1C2=CC=CC=C2C2=CC=CC=C21)C1=CC=CC=C1 RKVIAZWOECXCCM-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- GXGJIOMUZAGVEH-UHFFFAOYSA-N Chamazulene Chemical group CCC1=CC=C(C)C2=CC=C(C)C2=C1 GXGJIOMUZAGVEH-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- ZGUMCPODCOQROF-UHFFFAOYSA-K aluminum 8-hydroxy-2-methyl-1H-quinoline-2-carboxylate 4-phenylphenolate Chemical compound [Al+3].C1(=CC=CC=C1)C1=CC=C(C=C1)[O-].CC1(NC2=C(C=CC=C2C=C1)O)C(=O)[O-].CC1(NC2=C(C=CC=C2C=C1)O)C(=O)[O-] ZGUMCPODCOQROF-UHFFFAOYSA-K 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- KYPOHTVBFVELTG-UHFFFAOYSA-N but-2-enedinitrile Chemical group N#CC=CC#N KYPOHTVBFVELTG-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
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- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 125000002577 pseudohalo group Chemical group 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/18—Light sources with substantially two-dimensional radiating surfaces characterised by the nature or concentration of the activator
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
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- Electroluminescent Light Sources (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Description
本明細書で使用されるとき、略語は、以下のように材料を参照する。
CBP:4,4'-N,N-ジカルバゾールバイフェニル
m-MTDATA:4,4',4"-トリス(3-メチルフェニルフェニルアミノ)トリフェニルアミン
Alq3:8-トリス-ヒドロキシキノリンアルミニウム
Bphen:4,7-ジフェニル-1,10-フェナントロリン
n-BPhen:nドープされたBPhen(リチウムでドープされた)
F4-TCNQ:テトラフルオロテトラシアノキノンジメチレン
p-MTDATA:pドープされたm-MTDATA(F4-TCNQでドープされた)
Ir(ppy)3:トリス(2-フェニルピリジン)イリジウム
Ir(ppz)3:トリス(1-フェニルピラゾロト,N,C(2')イリジウム(III))
BCP:2,9-ジメチル-4,7-ジフェニル-1,10-フェナントロリン
TAZ:3-フェニル-4-(1'-ナフチル)-5-フェニル-1,2,4-トリアゾール
CuPc-:銅フタロシアニン
ITO:酸化インジウム錫
NPD:N,N'-ジフェニル-N,N'-ジ(1-ナフチル)ベンジジン
TPD:N,N'-ジフェニル-N,N'-ジ(3-トリル)ベンジジン
BAlq:アルミニウム(III)ビス(2-メチル-8-ヒドロキシキノリネート)4-フェニルフェノレート
mCP:1,3-N,N'-ジカルボゾール-ベンゼン
DCM:4-(ジシアノエチレン)-6-(4-ジメチルアミノスチリル-2-メチル)-4H-パイラン
DMQA:N,N'-ジメチルキナクリドン
PEDOT-PSS:ポリスチレンサルフォネート(PSS)を有するポリ(3,4-エチレンジオキシチオフェン)の水性分散剤
TCTA:4,4',4"-トリス(カルバゾール-9-yl)トリフェニルアミン
110、210 基板
115、230 アノード
120 正孔注入層
125、225 正孔輸送層
130 電子遮断層
135、220 発光層
140 正孔遮断層
145 電子輸送層
150 電子注入層
155 保護層
160、215 カソード
162 第1の導電層
164 第2の導電層
200 反転OLED
Claims (12)
- 有機光電子デバイスであって、
a)アノードと、
b)カソードと、
c)前記アノードと前記カソードとの間に配置された発光層であって、
i)燐光ドーパントHOMOエネルギーレベル、燐光ドーパントLUMOエネルギーレベル、三重項エネルギー、および一重項エネルギーを有する燐光ドーパントと、
ii)発光層ホストHOMOエネルギーレベルおよび発光層ホストLUMOエネルギーレベルを有する発光層ホストとを含む発光層と、
d)前記発光層に隣接して配置される輸送層とを備え、
前記輸送層は、正孔輸送層または電子輸送層のいずれか一方であり、
前記輸送層は、第1の材料HOMOエネルギーレベルおよび第1の材料LUMOエネルギーレベルを有する第1の材料を備え、
前記発光層内の電子と正孔とは、ドーパントに一重項を形成するのに要するエネルギーより小さいエネルギー差であって、ドーパントに三重項を形成するのに十分ではあるが、ドーパントに一重項を形成するのにはエネルギー的に不利であるエネルギー差を有し、
前記燐光ドーパントHOMOが前記発光層ホストHOMOより低いか、または、前記燐光ドーパントLUMOが前記発光層ホストLUMOより高い、有機光電子デバイス。 - 前記発光層ホストLUMOと前記燐光ドーパントHOMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーから0.1eVを引いた値以上である請求項1に記載のデバイス。
- 前記発光層ホストHOMOと前記燐光ドーパントLUMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーから0.1eVを引いた値以上である請求項1に記載のデバイス。
- 前記輸送層は電子輸送層であり、前記第1の材料LUMOと前記燐光ドーパントHOMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーから0.1eVを引いた値以上である請求項1に記載のデバイス。
- 前記輸送層は正孔輸送層であり、前記第1の材料HOMOと前記燐光ドーパントLUMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーから0.1eVを引いた値以上である請求項1に記載のデバイス。
- 電子輸送材料を含む電子輸送層と、正孔輸送材料を含む正孔輸送層との2つの輸送層を備え、前記電子輸送材料LUMOと前記正孔輸送材料HOMOとの間の前記エネルギー差は、前記燐光ドーパントの前記三重項エネルギーから0.1eVを引いた値以上である請求項1に記載のデバイス。
- 前記エネルギー差は、前記燐光ドーパントの前記一重項エネルギーより少なくとも約0.2eV小さい請求項6に記載のデバイス。
- 前記燐光ドーパントは、約500nm未満である発光スペクトルにピークを有する請求項1に記載のデバイス。
- 前記輸送層は複数の材料を含み、各材料はHOMOエネルギーレベル及びLUMOエネルギーレベルを有し、前記複数の材料の各々の少なくとも一のエネルギーレベルは併せて、前記発光層の少なくとも一のエネルギーレベルにつながる一群のエネルギーステップを形成し、該一群のエネルギーステップの各ステップは0.2eV以上ではない請求項1に記載の有機光電子デバイス。
- a)基板上にアノードを堆積する段階と、
b)前記アノード上に発光層を堆積する段階であって、前記発光層は、
i)燐光ドーパントHOMOエネルギーレベル、燐光ドーパントLUMOエネルギーレベル、三重項エネルギー、および一重項エネルギーを有する燐光ドーパントと、
ii)発光層ホストHOMOエネルギーレベルおよび発光層ホストLUMOエネルギーレベルを有する発光層ホストとを含む、前記段階と、
c)前記発光層上に電子輸送層を堆積する段階であって、前記電子輸送層は、電子輸送材料LUMOエネルギーレベルを有する電子輸送材料を含む段階と、
d)前記電子輸送層上にカソードを堆積する段階とを含み、
前記発光層内の電子と正孔とは、ドーパントに一重項を形成するのに要するエネルギーより小さいエネルギー差であって、ドーパントに三重項を形成するのに十分ではあるが、ドーパントに一重項を形成するのにはエネルギー的に不利であるエネルギー差を有し、
前記燐光ドーパントHOMOが前記発光層ホストHOMOより低いか、または、前記燐光ドーパントLUMOが前記発光層ホストLUMOより高い、方法。 - 前記電子輸送材料LUMOと前記燐光ドーパントHOMOとは、少なくとも燐光ドーパントの三重項エネルギーに等しくかつ燐光ドーパントの一重項エネルギーより少なくとも0.2eV小さいエネルギー差を有する請求項10に記載の方法。
- 前記発光層LUMOと前記燐光ドーパントHOMOとは、少なくとも燐光ドーパントの三重項エネルギーに等しくかつ燐光ドーパントの一重項エネルギーより少なくとも0.2eV小さいエネルギー差を有する請求項10に記載の方法。
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US8143613B2 (en) * | 2007-11-27 | 2012-03-27 | The Regents Of The University Of Michigan | Organic light emitting device having multiple separate emissive layers |
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WO2006105387A2 (en) | 2006-10-05 |
TW200644719A (en) | 2006-12-16 |
JP2008535266A (ja) | 2008-08-28 |
EP1878068A2 (en) | 2008-01-16 |
CN101156257B (zh) | 2012-01-18 |
JP2016028459A (ja) | 2016-02-25 |
JP5662402B2 (ja) | 2015-01-28 |
TWI452930B (zh) | 2014-09-11 |
EP1878068B1 (en) | 2013-11-13 |
US7683536B2 (en) | 2010-03-23 |
CN101156257A (zh) | 2008-04-02 |
KR101255871B1 (ko) | 2013-04-17 |
WO2006105387A3 (en) | 2007-06-21 |
US20060279204A1 (en) | 2006-12-14 |
KR20070114376A (ko) | 2007-12-03 |
WO2006105387A8 (en) | 2007-11-22 |
JP2013048265A (ja) | 2013-03-07 |
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