JP5855422B2 - 発光素子及びその製造方法 - Google Patents
発光素子及びその製造方法 Download PDFInfo
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- JP5855422B2 JP5855422B2 JP2011240108A JP2011240108A JP5855422B2 JP 5855422 B2 JP5855422 B2 JP 5855422B2 JP 2011240108 A JP2011240108 A JP 2011240108A JP 2011240108 A JP2011240108 A JP 2011240108A JP 5855422 B2 JP5855422 B2 JP 5855422B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000010410 layer Substances 0.000 claims description 259
- 239000004065 semiconductor Substances 0.000 claims description 103
- 150000001875 compounds Chemical class 0.000 claims description 98
- 239000000758 substrate Substances 0.000 claims description 65
- 239000012790 adhesive layer Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 13
- 239000011810 insulating material Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- -1 InN Chemical compound 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
110 化合物半導体構造物
110a,210 ビアホール
111 第1化合物半導体層
112 活性層
113 第2化合物半導体層
120 絶縁層
121,190,290 保護層
122 絶縁物質層
130 第1電極層
140 第2電極層
150 伝導性接着層
160 非導電性基板
170 絶縁膜
181 第1電極連結層
182 第2電極連結層
183 伝導性接着層
200 パッケージ
Claims (10)
- 第1化合物半導体層、活性層、及び第2化合物半導体層を含む化合物半導体構造物と、
前記化合物半導体構造物の前記第2化合物半導体層側の面に設けられて前記第1化合物半導体層に電気的に連結される第1電極層と、
前記化合物半導体構造物の前記第2化合物半導体層側の面に設けられて該第2化合物半導体層に電気的に連結される第2電極層と、
前記第1電極層及び前記第2電極層が位置する領域の一部を除外した残りの領域に塗布された絶縁層と、
非導電性基板に対向して形成され、該非導電性基板を前記第1電極層及び前記絶縁層に連結させる導電性接着層と、
前記導電性接着層の一方の側面及び前記非導電性基板の一方の側面に接するように形成されて前記導電性接着層に連結される第1電極連結層と、
前記導電性接着層の他方の側面及び前記非導電性基板の他方の側面上に形成されて前記第2電極層に連結され、前記導電性接着層とは離隔されている第2電極連結層と、
を含む発光素子。 - 前記第1電極連結層は、前記導電性接着層を介して、前記第1電極層に電気的に連結されることを特徴とする請求項1に記載の発光素子。
- 前記第2電極連結層と前記導電性接着層との間には、絶縁膜が設けられていることを特徴とする請求項1または2に記載の発光素子。
- 前記絶縁膜は、前記第2電極層の側面と、前記非導電性基板の前記他方の側面とを覆うように延びていることを特徴とする請求項3に記載の発光素子。
- 前記非導電性基板、前記第1電極連結層、及び前記第2電極連結層は、伝導性接着層によってパッケージと連結され、前記伝導性接着層及び前記パッケージにはビアホールが形成されて前記第1電極連結層と前記第2電極連結層とを絶縁させることを特徴とする請求項1乃至4の何れか1項に記載の発光素子。
- 基板上に、第1化合物半導体層、活性層、及び第2化合物半導体層を積層して化合物半導体構造物を形成する化合物半導体構造物形成段階と、
前記化合物半導体構造物の前記第2化合物半導体層側に、前記第1化合物半導体層に電気的に連結される第1電極層及び第2化合物半導体層に電気的に連結される第2電極層を形成する電極層形成段階と、
前記第1電極層及び前記第2電極層が位置する領域以外の領域に、絶縁層を塗布する塗布段階と、
前記絶縁層及び前記第1電極層に、導電性接着層を利用して非導電性基板を接合する接合段階と、
前記導電性接着層の一部と、第2電極層の前記第2化合物半導体層に対向する面の一部とを露出させる露出段階と、
前記導電性接着層に第1電極連結層を連結させる第1電極連結層連結段階と、
前記第2電極層に第2電極連結層を連結させる第2電極連結層連結段階と
を含む発光素子の製造方法。 - 前記第2電極連結層連結段階の前に、前記非導電性基板及び前記導電性接着層の他方の側面と、前記第2電極層の側面とに絶縁膜を形成する段階をさらに含むことを特徴とする請求項6に記載の発光素子の製造方法。
- 前記第2電極連結層連結段階は、
前記絶縁膜を覆い包みつつ、前記第2電極層の露出面の一部に連結されるように、前記第2電極連結層を形成することを特徴とする請求項7に記載の発光素子の製造方法。 - 前記非導電性基板、前記第1電極連結層、及び前記第2電極連結層を、導電性接着層を利用してパッケージに連結させる段階をさらに含むことを特徴とする請求項8に記載の発光素子の製造方法。
- 前記導電性接着層と前記パッケージとを貫通して、前記非導電性基板までビアホールを形成し、前記第1電極連結層と前記第2電極連結層とを絶縁させる段階をさらに含むことを特徴とする請求項9に記載の発光素子の製造方法。
Applications Claiming Priority (2)
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KR1020100113478A KR101194844B1 (ko) | 2010-11-15 | 2010-11-15 | 발광소자 및 그 제조방법 |
KR10-2010-0113478 | 2010-11-15 |
Publications (3)
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JP2012109566A JP2012109566A (ja) | 2012-06-07 |
JP2012109566A5 JP2012109566A5 (ja) | 2014-12-04 |
JP5855422B2 true JP5855422B2 (ja) | 2016-02-09 |
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JP2011240108A Expired - Fee Related JP5855422B2 (ja) | 2010-11-15 | 2011-11-01 | 発光素子及びその製造方法 |
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US (2) | US8735932B2 (ja) |
EP (1) | EP2453492A2 (ja) |
JP (1) | JP5855422B2 (ja) |
KR (1) | KR101194844B1 (ja) |
CN (1) | CN102569574B (ja) |
DE (1) | DE102011086400A1 (ja) |
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-
2010
- 2010-11-15 KR KR1020100113478A patent/KR101194844B1/ko active IP Right Grant
-
2011
- 2011-09-19 EP EP11181732A patent/EP2453492A2/en not_active Withdrawn
- 2011-10-05 US US13/253,515 patent/US8735932B2/en active Active
- 2011-11-01 CN CN201110350679.3A patent/CN102569574B/zh not_active Expired - Fee Related
- 2011-11-01 JP JP2011240108A patent/JP5855422B2/ja not_active Expired - Fee Related
- 2011-11-15 DE DE102011086400A patent/DE102011086400A1/de not_active Withdrawn
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2014
- 2014-04-15 US US14/253,478 patent/US8877562B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE102011086400A1 (de) | 2012-05-16 |
EP2453492A2 (en) | 2012-05-16 |
US8877562B2 (en) | 2014-11-04 |
US8735932B2 (en) | 2014-05-27 |
US20120119249A1 (en) | 2012-05-17 |
KR101194844B1 (ko) | 2012-10-25 |
JP2012109566A (ja) | 2012-06-07 |
CN102569574A (zh) | 2012-07-11 |
CN102569574B (zh) | 2015-12-02 |
KR20120052036A (ko) | 2012-05-23 |
US20140227814A1 (en) | 2014-08-14 |
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