JP5838114B2 - X線トポグラフィ装置 - Google Patents
X線トポグラフィ装置 Download PDFInfo
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- JP5838114B2 JP5838114B2 JP2012083680A JP2012083680A JP5838114B2 JP 5838114 B2 JP5838114 B2 JP 5838114B2 JP 2012083680 A JP2012083680 A JP 2012083680A JP 2012083680 A JP2012083680 A JP 2012083680A JP 5838114 B2 JP5838114 B2 JP 5838114B2
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- topography apparatus
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- 238000004854 X-ray topography Methods 0.000 title claims description 38
- 239000013078 crystal Substances 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 25
- 230000005540 biological transmission Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 description 25
- 238000005259 measurement Methods 0.000 description 18
- 238000002441 X-ray diffraction Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005162 X-ray Laue diffraction Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 101700004678 SLIT3 Proteins 0.000 description 1
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
Claims (4)
- 所定の特性X線を含むX線を微小焦点より放射する、X線源と、
前記所定の特性X線に対応し、前記微小焦点から遠ざかるほど格子間隔が大きくなる傾斜格子面間隔の多層膜ミラーを含むとともに、該多層膜ミラーが反射するX線を試料へ入射させる、光学系と、
前記試料より発生する回折X線を検出する、X線検出器と、
を備える、X線トポグラフィ装置であって、
前記多層膜ミラーは断面が放物線となる複数の湾曲反射面を有し、前記複数の湾曲反射面は共通の焦点を有し、前記共通の焦点に前記X線源の前記微小焦点が配置されることにより前記所定の特性X線の扇形ビームが形成される、
ことを特徴とする、X線トポグラフィ装置。 - 請求項1に記載のX線トポグラフィ装置であって、
前記X線源及び前記光学系が配置されるとともに、前記試料に対して回転移動をする、回転駆動系を、さらに備え、
前記回転駆動系は、透過測定をするための透過配置と、反射測定をするための反射配置とのいずれかを選択して、前記X線源及び前記光学系を移動させ、さらに、選択される配置において、前記X線が前記試料に対して所望の回折条件を満たすよう、前記X線源及び前記光学系を移動させる、
ことを特徴とする、X線トポグラフィ装置。 - 請求項1又は2に記載のX線トポグラフィ装置であって、
前記光学系は、前記多層膜ミラーと前記試料の間に配置されるとともに、前記所定の特性X線の波長に対応する、単結晶モノクロメータを、さらに備える、
ことを特徴とする、X線トポグラフィ装置。 - 請求項1乃至3のいずれかに記載のX線トポグラフィ装置であって、
前記多層膜ミラーの表面精度は10arcsec以下である、
ことを特徴とする、X線トポグラフィ装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012083680A JP5838114B2 (ja) | 2012-04-02 | 2012-04-02 | X線トポグラフィ装置 |
DE102013004503.7A DE102013004503B4 (de) | 2012-04-02 | 2013-03-14 | Verwendung einer Röntgenstrahlvorrichtung zur Untersuchung von Kristalldefekten |
US13/845,744 US9335282B2 (en) | 2012-04-02 | 2013-03-18 | X-ray topography apparatus |
KR1020130035372A KR101912907B1 (ko) | 2012-04-02 | 2013-04-01 | X선 토포그래피 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012083680A JP5838114B2 (ja) | 2012-04-02 | 2012-04-02 | X線トポグラフィ装置 |
Publications (3)
Publication Number | Publication Date |
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JP2013213720A JP2013213720A (ja) | 2013-10-17 |
JP2013213720A5 JP2013213720A5 (ja) | 2014-07-24 |
JP5838114B2 true JP5838114B2 (ja) | 2015-12-24 |
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JP2012083680A Active JP5838114B2 (ja) | 2012-04-02 | 2012-04-02 | X線トポグラフィ装置 |
Country Status (4)
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US (1) | US9335282B2 (ja) |
JP (1) | JP5838114B2 (ja) |
KR (1) | KR101912907B1 (ja) |
DE (1) | DE102013004503B4 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6025211B2 (ja) * | 2013-11-28 | 2016-11-16 | 株式会社リガク | X線トポグラフィ装置 |
JP6202684B2 (ja) * | 2014-06-05 | 2017-09-27 | 株式会社リガク | X線回折装置 |
US10161887B2 (en) * | 2015-01-20 | 2018-12-25 | United Technologies Corporation | Systems and methods for materials analysis |
JP6999268B2 (ja) | 2016-01-11 | 2022-01-18 | ブルカー テクノロジーズ リミテッド | X線スキャタロメトリーのための方法および装置 |
US10677744B1 (en) * | 2016-06-03 | 2020-06-09 | U.S. Department Of Energy | Multi-cone x-ray imaging Bragg crystal spectrometer |
US9859029B2 (en) * | 2016-07-23 | 2018-01-02 | Rising Star Pathway, a California Corporation | X-ray laser microscopy sample analysis system and method |
JP6978928B2 (ja) * | 2017-12-25 | 2021-12-08 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの評価方法 |
US10816487B2 (en) | 2018-04-12 | 2020-10-27 | Bruker Technologies Ltd. | Image contrast in X-ray topography imaging for defect inspection |
JP2019191168A (ja) | 2018-04-23 | 2019-10-31 | ブルカー ジェイヴィ イスラエル リミテッドBruker Jv Israel Ltd. | 小角x線散乱測定用のx線源光学系 |
CN112654861B (zh) | 2018-07-05 | 2024-06-11 | 布鲁克科技公司 | 小角度x射线散射测量 |
RU197307U1 (ru) * | 2019-12-23 | 2020-04-21 | Федеральное государственное автономное образовательное учреждение высшего образования "Балтийский федеральный университет имени Иммануила Канта" | Многослойное зеркало для монохроматизации жесткого рентгеновского излучения |
CN113030139B (zh) * | 2021-05-31 | 2021-08-13 | 中国工程物理研究院激光聚变研究中心 | 一种新型晶体及紧凑型成像装置 |
US11781999B2 (en) | 2021-09-05 | 2023-10-10 | Bruker Technologies Ltd. | Spot-size control in reflection-based and scatterometry-based X-ray metrology systems |
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DE3442061A1 (de) | 1984-11-17 | 1986-05-28 | Erno Raumfahrttechnik Gmbh, 2800 Bremen | Verfahren zum zerstoerungsfreien pruefen inhomogener werkstoffe |
JP2919598B2 (ja) * | 1990-11-07 | 1999-07-12 | 理学電機株式会社 | X線トポグラフィ装置 |
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JP4944151B2 (ja) | 2009-04-27 | 2012-05-30 | 関戸機鋼株式会社 | ツールプリセッタ |
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2012
- 2012-04-02 JP JP2012083680A patent/JP5838114B2/ja active Active
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2013
- 2013-03-14 DE DE102013004503.7A patent/DE102013004503B4/de active Active
- 2013-03-18 US US13/845,744 patent/US9335282B2/en active Active
- 2013-04-01 KR KR1020130035372A patent/KR101912907B1/ko active IP Right Grant
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Publication number | Publication date |
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KR101912907B1 (ko) | 2018-10-29 |
KR20130112001A (ko) | 2013-10-11 |
JP2013213720A (ja) | 2013-10-17 |
US20130259200A1 (en) | 2013-10-03 |
DE102013004503B4 (de) | 2017-08-03 |
DE102013004503A1 (de) | 2013-10-02 |
US9335282B2 (en) | 2016-05-10 |
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