JP5836562B2 - 高精細化パターンを有する光変調器 - Google Patents
高精細化パターンを有する光変調器 Download PDFInfo
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- JP5836562B2 JP5836562B2 JP2009293465A JP2009293465A JP5836562B2 JP 5836562 B2 JP5836562 B2 JP 5836562B2 JP 2009293465 A JP2009293465 A JP 2009293465A JP 2009293465 A JP2009293465 A JP 2009293465A JP 5836562 B2 JP5836562 B2 JP 5836562B2
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- 230000003287 optical effect Effects 0.000 title claims description 72
- 238000006243 chemical reaction Methods 0.000 claims description 93
- 230000005540 biological transmission Effects 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 25
- 230000000694 effects Effects 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000027756 respiratory electron transport chain Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009429 electrical wiring Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000003331 infrared imaging Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- -1 O-O-O Chemical class 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005570 vertical transmission Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/145—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being characterised by at least one potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
21 光イメージ入射面、
30 電光変換素子、
31 光イメージ出射面、
41 第1透明電極、
43 内部電極、
45 第2透明電極、
50 トレンチ、
70 伝達素子、
80 リレーレンズセット、
90 イメージセンサー。
Claims (10)
- 光電効果を利用して入力光イメージを電流信号に変換する光電変換素子と、
前記光電変換素子から伝達される前記電流信号を出力光イメージに変換し発光する電光変換素子と、
前記光電変換素子または前記電光変換素子の少なくとも一面において複数の画素を区画し、前記光電変換素子から前記電光変換素子への前記電流信号の伝達時に画素間の電気的干渉を遮断もしくは削減するために、前記光電変換素子または前記電光変換素子の少なくとも一面から所定の深さまで形成されるトレンチと、を含み、
前記トレンチは、前記画素を定義すべく、前記画素周辺に離散的に形成されて1画素が4地点で隣接画素と電気的に連結される離散型トレンチパターン形態、1画素が2地点で隣接画素と電気的に連結され、単一連結地点は4個の隣接した画素が互いに連結される十字状トレンチパターン形態、及び1画素が2地点で隣接画素と電気的に連結され、単一連結地点は画素を定義する辺の中央部に位置するか、角部に位置する枝状トレンチパターン形態のうち、いずれか1形態で形成される、光変調器。 - 前記トレンチは、前記光電変換素子から前記電光変換素子側に前記所定の深さまで形成されることを特徴とする請求項1に記載の光変調器。
- 前記トレンチは、前記電光変換素子から前記光電変換素子側に前記所定の深さまで形成されることを特徴とする請求項1に記載の光変調器。
- 前記所定の深さは第1深さであり、
前記トレンチは、前記光電変換素子または前記電光変換素子の両側にいずれも形成され、前記光電変換素子から前記電光変換素子側に前記第1深さまで形成され、前記電光変換素子から前記光電変換素子側に第2深さまで形成されることを特徴とする請求項1に記載の光変調器。 - 前記トレンチは、前記光電変換素子と前記電光変換素子とを貫通するように形成されることを特徴とする請求項1に記載の光変調器。
- 前記トレンチは、その深さによって、断面の幅サイズが異なるテーパ状またはステップ状に形成されたことを特徴とする請求項1ないし4のうちいずれか1項に記載の光変調器。
- 前記光電変換素子と電光変換素子との間に、前記光電変換素子からの電流信号を前記電光変換素子に伝達する伝達素子をさらに備えることを特徴とする請求項1ないし6のうちいずれか1項に記載の光変調器。
- 前記伝達素子は、半導体基板を含むことを特徴とする請求項7に記載の光変調器。
- 前記トレンチは、前記光電変換素子または前記電光変換素子の一面から前記伝達素子に至る深さまで形成されることを特徴とする請求項7または8に記載の光変調器。
- 前記入力光イメージが入射する面に備えられる第1透明電極と、
前記出力光イメージを出射する面に備えられる第2透明電極と、
前記光電変換素子と前記電光変換素子との間に備えられる内部電極と、
をさらに含むことを特徴とする請求項1ないし9のうちいずれか1項に記載の光変調器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0138715 | 2008-12-31 | ||
KR1020080138715A KR101520029B1 (ko) | 2008-12-31 | 2008-12-31 | 고정세화 패턴을 갖는 광 변조기 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010157731A JP2010157731A (ja) | 2010-07-15 |
JP5836562B2 true JP5836562B2 (ja) | 2015-12-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009293465A Active JP5836562B2 (ja) | 2008-12-31 | 2009-12-24 | 高精細化パターンを有する光変調器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8436370B2 (ja) |
JP (1) | JP5836562B2 (ja) |
KR (1) | KR101520029B1 (ja) |
CN (1) | CN101770084B (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101675112B1 (ko) | 2010-01-21 | 2016-11-22 | 삼성전자주식회사 | 거리 정보 추출 방법 및 상기 방법을 채용한 광학 장치 |
KR101753312B1 (ko) | 2010-09-17 | 2017-07-03 | 삼성전자주식회사 | 뎁스 영상 생성 장치 및 방법 |
KR101722641B1 (ko) | 2010-12-23 | 2017-04-04 | 삼성전자주식회사 | 3차원 영상 획득 장치 및 상기 3차원 영상 획득 장치에서 깊이 정보를 추출하는 방법 |
KR101854188B1 (ko) | 2011-10-25 | 2018-05-08 | 삼성전자주식회사 | 3차원 영상 획득 장치 및 3차원 영상 획득 장치에서 깊이 정보 산출 방법 |
JP6168331B2 (ja) * | 2012-05-23 | 2017-07-26 | ソニー株式会社 | 撮像素子、および撮像装置 |
KR102040152B1 (ko) | 2013-04-08 | 2019-12-05 | 삼성전자주식회사 | 3차원 영상 획득 장치 및 3차원 영상 획득 장치에서의 깊이 영상 생성 방법 |
US10700225B2 (en) | 2013-05-22 | 2020-06-30 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US9496435B2 (en) * | 2013-05-22 | 2016-11-15 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US11121271B2 (en) | 2013-05-22 | 2021-09-14 | W&WSens, Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
KR102056904B1 (ko) | 2013-05-22 | 2019-12-18 | 삼성전자주식회사 | 3차원 영상 획득 장치 및 그 구동 방법 |
US10446700B2 (en) | 2013-05-22 | 2019-10-15 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10468543B2 (en) | 2013-05-22 | 2019-11-05 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
CN104752341B (zh) * | 2013-12-31 | 2018-01-30 | 上海丽恒光微电子科技有限公司 | 红外雪崩二极管阵列装置及形成方法、激光三维成像装置 |
KR102194237B1 (ko) | 2014-08-29 | 2020-12-22 | 삼성전자주식회사 | 깊이 영상 촬영 장치 및 깊이 정보 획득 방법 |
EP3221895A4 (en) | 2014-11-18 | 2018-08-15 | Shih-Yuan Wang | Microstructure enhanced absorption photosensitive devices |
KR102610830B1 (ko) | 2015-12-24 | 2023-12-06 | 삼성전자주식회사 | 거리 정보를 획득하는 방법 및 디바이스 |
KR20180021509A (ko) | 2016-08-22 | 2018-03-05 | 삼성전자주식회사 | 거리 정보를 획득하는 방법 및 디바이스 |
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-
2008
- 2008-12-31 KR KR1020080138715A patent/KR101520029B1/ko active IP Right Grant
-
2009
- 2009-12-22 US US12/644,564 patent/US8436370B2/en active Active
- 2009-12-24 JP JP2009293465A patent/JP5836562B2/ja active Active
- 2009-12-31 CN CN200910265974.1A patent/CN101770084B/zh active Active
Also Published As
Publication number | Publication date |
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KR101520029B1 (ko) | 2015-05-15 |
US20100163889A1 (en) | 2010-07-01 |
CN101770084B (zh) | 2014-05-07 |
CN101770084A (zh) | 2010-07-07 |
JP2010157731A (ja) | 2010-07-15 |
KR20100080092A (ko) | 2010-07-08 |
US8436370B2 (en) | 2013-05-07 |
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