JP5802009B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5802009B2 JP5802009B2 JP2010280703A JP2010280703A JP5802009B2 JP 5802009 B2 JP5802009 B2 JP 5802009B2 JP 2010280703 A JP2010280703 A JP 2010280703A JP 2010280703 A JP2010280703 A JP 2010280703A JP 5802009 B2 JP5802009 B2 JP 5802009B2
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- Prior art keywords
- oxide semiconductor
- semiconductor layer
- single crystal
- crystal region
- component
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02656—Special treatments
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
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Description
本実施の形態では、開示する発明の一態様に係る半導体装置の構成及び作製方法について、図1乃至図9を参照して説明する。
本実施の形態では、実施の形態1と比較して、酸化物半導体積層体110の異なる作製方法について、図11を用いて説明する。
本実施の形態では、実施の形態1及び実施の形態2と比較して、酸化物半導体積層体110の異なる作製方法について、図12を用いて説明する。
本実施の形態では、単結晶領域を有する多元系酸化物半導体層の作製方法が実施の形態1と異なる形態について、図2及び図13を用いて説明する。
実施の形態1ではトップゲート構造のトランジスタの作製工程を示したが、本実施の形態では、図14を用いて、ボトムゲート構造のトランジスタの作製工程について説明する。
本実施の形態では、チャネルストップ構造のトランジスタの構造を図16を用いて示す。
本実施の形態では、実施の形態5及び実施の形態6に適用可能な構造について、図17を用いて説明する。
本実施の形態では、先の実施の形態において説明した半導体装置を半導体集積回路に用いる場合の一形態として、別の半導体材料を用いた半導体装置との積層構造による半導体装置について、図18を参照して説明する。
本実施の形態では、開示する発明の一態様に係る半導体装置の具体的な形態として、記憶装置として機能する半導体装置の構成を説明する。なお、ここでは、単結晶領域を有する一元系酸化物半導体層及び単結晶領域を有する多元系酸化物半導体層(以下、酸化物半導体積層体と示す。)を用いたトランジスタと、酸化物半導体積層体以外の材料(例えば、シリコン)を用いたトランジスタと、を含む半導体装置について説明する。
本実施の形態では、c軸配向した酸化物半導体積層体を含むトランジスタを作製し、該トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製する場合について説明する。また、駆動回路の一部または全部を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
半導体装置の一形態に相当する発光表示パネル(発光パネルともいう)の外観及び断面について、図21を用いて説明する。図21(A)は、第1の基板上に形成されたc軸配向した酸化物半導体積層体を含むトランジスタ及びエレクトロルミネッセンス素子(EL素子ともいう)などの発光素子を、第2の基板との間にシール材によって封止した、パネルの平面図であり、図21(B)は、図21(A)のH−Iにおける断面図に相当する。
本実施の形態では、半導体装置の一形態として電子ペーパーを示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラなどのカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
Claims (14)
- ガラス基板上に一元系酸化物半導体層を形成し、
第1の加熱処理を行って、前記一元系酸化物半導体層の表面から内部に向かって結晶成長させて、単結晶領域を有する一元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層上に多元系酸化物半導体層を形成し、
第2の加熱処理を行って、前記多元系酸化物半導体層を結晶成長させて、単結晶領域を有する多元系酸化物半導体層を形成し、
前記一元系酸化物半導体層は、酸化亜鉛を有し、
前記多元系酸化物半導体層は、インジウム、ガリウム、及び亜鉛を有する酸化物半導体層、又は、インジウム、スズ、及び亜鉛を有する酸化物半導体層であることを特徴とする半導体装置の作製方法。 - ガラス基板上に一元系酸化物半導体層を形成し、
加熱処理を行って、前記一元系酸化物半導体層の表面から内部に向かって結晶成長させて、単結晶領域を有する一元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層上に、加熱しながらスパッタリング法により単結晶領域を有する多元系酸化物半導体層を形成し、
前記一元系酸化物半導体層は、酸化亜鉛を有し、
前記多元系酸化物半導体層は、インジウム、ガリウム、及び亜鉛を有する酸化物半導体層、又は、インジウム、スズ、及び亜鉛を有する酸化物半導体層であることを特徴とする半導体装置の作製方法。 - ガラス基板上に一元系酸化物半導体層を形成し、
第1の加熱処理を行って、前記一元系酸化物半導体層の表面から内部に向かって結晶成長させて、単結晶領域を有する一元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層上に多元系酸化物半導体層を形成し、
第2の加熱処理を行って、前記多元系酸化物半導体層を結晶成長させて、単結晶領域を有する多元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層及び前記単結晶領域を有する多元系酸化物半導体層を島状にエッチングし、
前記単結晶領域を有する一元系酸化物半導体層上及び前記単結晶領域を有する多元系酸化物半導体層上に、ソース電極及びドレイン電極を形成し、
前記ソース電極及びドレイン電極上に、ゲート絶縁層を形成し、
前記ゲート絶縁層上にゲート電極を形成し、
前記一元系酸化物半導体層は、酸化亜鉛を有し、
前記多元系酸化物半導体層は、インジウム、ガリウム、及び亜鉛を有する酸化物半導体層、又は、インジウム、スズ、及び亜鉛を有する酸化物半導体層であることを特徴とする半導体装置の作製方法。 - ガラス基板上に一元系酸化物半導体層を形成し、
加熱処理を行って、前記一元系酸化物半導体層の表面から内部に向かって結晶成長させて、単結晶領域を有する一元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層上に、加熱しながらスパッタリング法により単結晶領域を有する多元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層及び前記単結晶領域を有する多元系酸化物半導体層を島状にエッチングし、
前記単結晶領域を有する一元系酸化物半導体層上及び前記単結晶領域を有する多元系酸化物半導体層上に、ソース電極及びドレイン電極を形成し、
前記ソース電極及びドレイン電極上にゲート絶縁層を形成し、
前記ゲート絶縁層上にゲート電極を形成し、
前記一元系酸化物半導体層は、酸化亜鉛を有し、
前記多元系酸化物半導体層は、インジウム、ガリウム、及び亜鉛を有する酸化物半導体層、又は、インジウム、スズ、及び亜鉛を有する酸化物半導体層であることを特徴とする半導体装置の作製方法。 - 基板上にゲート電極を形成し、
前記ゲート電極上にゲート絶縁層を形成し、
前記ゲート絶縁層上に一元系酸化物半導体層を形成し、
第1の加熱処理を行って、前記一元系酸化物半導体層の表面から内部に向かって結晶成長させて、単結晶領域を有する一元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層上に多元系酸化物半導体層を形成し、
第2の加熱処理を行って、前記多元系酸化物半導体層を結晶成長させて、単結晶領域を有する多元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層及び前記単結晶領域を有する多元系酸化物半導体層を島状にエッチングし、
前記単結晶領域を有する一元系酸化物半導体層上及び前記単結晶領域を有する多元系酸化物半導体層上に、ソース電極及びドレイン電極を形成し、
前記一元系酸化物半導体層は、酸化亜鉛を有し、
前記多元系酸化物半導体層は、インジウム、ガリウム、及び亜鉛を有する酸化物半導体層、又は、インジウム、スズ、及び亜鉛を有する酸化物半導体層であることを特徴とする半導体装置の作製方法。 - 基板上にゲート電極を形成し、
前記ゲート電極上にゲート絶縁層を形成し、
前記ゲート絶縁層上に一元系酸化物半導体層を形成し、
加熱処理を行って、前記一元系酸化物半導体層の表面から内部に向かって結晶成長させて、単結晶領域を有する一元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層上に加熱しながらスパッタリング法により単結晶領域を有する多元系酸化物半導体層を形成し、
前記単結晶領域を有する一元系酸化物半導体層及び前記単結晶領域を有する多元系酸化物半導体層を島状にエッチングし、
前記単結晶領域を有する一元系酸化物半導体層上及び前記単結晶領域を有する多元系酸化物半導体層上に、ソース電極及びドレイン電極を形成し、
前記一元系酸化物半導体層は、酸化亜鉛を有し、
前記多元系酸化物半導体層は、インジウム、ガリウム、及び亜鉛を有する酸化物半導体層、又は、インジウム、スズ、及び亜鉛を有する酸化物半導体層であることを特徴とする半導体装置の作製方法。 - 請求項1乃至6のいずれか一項において、
前記第1の加熱処理または前記加熱処理は、500℃以上1000℃以下で行われることを特徴とする半導体装置の作製方法。 - 請求項1乃至7のいずれか一項において、
前記多元系酸化物半導体層は、前記単結晶領域を有する一元系酸化物半導体層を種として結晶成長し、前記単結晶領域を有する多元系酸化物半導体層となることを特徴とする半導体装置の作製方法。 - 請求項1乃至8のいずれか一項において、
前記単結晶領域を有する一元系酸化物半導体層は、表面に平行なa−b面を有し、前記表面に対して垂直方向にc軸配向をしている結晶を有することを特徴とする半導体装置の作製方法。 - 請求項1乃至9のいずれか一項において、
前記単結晶領域を有する多元系酸化物半導体層は、表面に平行なa−b面を有し、前記表面に対して垂直方向にc軸配向をしている結晶を有することを特徴とする半導体装置の作製方法。 - 請求項1乃至10のいずれか一項において、
前記単結晶領域を有する一元系酸化物半導体層及び前記単結晶領域を有する多元系酸化物半導体層は、六方晶構造であることを特徴とする半導体装置の作製方法。 - 請求項1乃至11のいずれか一項において、
前記単結晶領域を有する一元系酸化物半導体層及び前記単結晶領域を有する多元系酸化物半導体層は、脱水化または脱水素化されていることを特徴とする半導体装置の作製方法。 - 請求項1乃至12のいずれか一項において、
前記単結晶領域を有する一元系酸化物半導体層及び前記単結晶領域を有する多元系酸化物半導体層は、キャリア密度が1×10 12 cm−3未満であることを特徴とする半導体装置の作製方法。 - 請求項1乃至13のいずれか一項において、
前記単結晶領域を有する一元系酸化物半導体層及び前記単結晶領域を有する多元系酸化物半導体層は、真性半導体であることを特徴とする半導体装置の作製方法。
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